CA2541961A1 - Control of output beam divergence in a semiconductor waveguide device - Google Patents
Control of output beam divergence in a semiconductor waveguide device Download PDFInfo
- Publication number
- CA2541961A1 CA2541961A1 CA002541961A CA2541961A CA2541961A1 CA 2541961 A1 CA2541961 A1 CA 2541961A1 CA 002541961 A CA002541961 A CA 002541961A CA 2541961 A CA2541961 A CA 2541961A CA 2541961 A1 CA2541961 A1 CA 2541961A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- level
- sub
- cladding
- beam control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005253 cladding Methods 0.000 claims description 73
- 230000003287 optical effect Effects 0.000 claims description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 230000000704 physical effect Effects 0.000 abstract description 7
- 230000008859 change Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 208000031481 Pathologic Constriction Diseases 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0323905A GB2406968B (en) | 2003-10-11 | 2003-10-11 | Control of output beam divergence in a semiconductor waveguide device |
| GB0323905.0 | 2003-10-11 | ||
| PCT/GB2004/003959 WO2005043702A1 (en) | 2003-10-11 | 2004-09-16 | Control of output beam divergence in a semiconductor waveguide device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2541961A1 true CA2541961A1 (en) | 2005-05-12 |
Family
ID=29433774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002541961A Abandoned CA2541961A1 (en) | 2003-10-11 | 2004-09-16 | Control of output beam divergence in a semiconductor waveguide device |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7409134B2 (enExample) |
| EP (1) | EP1676347B1 (enExample) |
| JP (1) | JP2007508687A (enExample) |
| CN (1) | CN100454698C (enExample) |
| AT (1) | ATE369642T1 (enExample) |
| CA (1) | CA2541961A1 (enExample) |
| DE (1) | DE602004008096T2 (enExample) |
| GB (1) | GB2406968B (enExample) |
| WO (1) | WO2005043702A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007051315B4 (de) * | 2007-09-24 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| DE102007061458A1 (de) | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
| TWI721167B (zh) * | 2017-05-11 | 2021-03-11 | 光環科技股份有限公司 | 具小垂直發射角的邊射型雷射元件 |
| WO2019232261A1 (en) * | 2018-05-30 | 2019-12-05 | Nlight, Inc. | Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis |
| CN109193342B (zh) * | 2018-10-15 | 2019-11-15 | 中国科学院理化技术研究所 | 一种半导体激光器 |
| CN109672088A (zh) * | 2018-12-29 | 2019-04-23 | 江西德瑞光电技术有限责任公司 | 一种半导体激光芯片制造方法 |
| CN111755949B (zh) * | 2019-03-29 | 2021-12-07 | 潍坊华光光电子有限公司 | 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法 |
| WO2024018500A1 (ja) | 2022-07-19 | 2024-01-25 | 三菱電機株式会社 | 半導体受光素子 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0632339B2 (ja) | 1984-12-18 | 1994-04-27 | キヤノン株式会社 | 半導体レ−ザ |
| JPH0680859B2 (ja) * | 1984-12-27 | 1994-10-12 | ソニー株式会社 | 半導体レーザー |
| JPS6218082A (ja) * | 1985-07-16 | 1987-01-27 | Sharp Corp | 半導体レ−ザ素子 |
| DE3751548T2 (de) * | 1986-07-25 | 1996-04-11 | Mitsubishi Electric Corp | Halbleiterlaser. |
| US4882734A (en) * | 1988-03-09 | 1989-11-21 | Xerox Corporation | Quantum well heterostructure lasers with low current density threshold and higher TO values |
| GB9116871D0 (en) * | 1991-08-05 | 1991-09-18 | Unilever Plc | Hair care composition |
| JPH05243669A (ja) * | 1992-02-28 | 1993-09-21 | Hitachi Ltd | 半導体レーザ素子 |
| JPH05275798A (ja) * | 1992-03-25 | 1993-10-22 | Eastman Kodak Japan Kk | レーザダイオード |
| EP0714558B1 (en) * | 1994-06-20 | 1999-01-20 | Koninklijke Philips Electronics N.V. | Radiation-emitting semiconductor index-guided diode |
| JPH09232692A (ja) * | 1996-02-16 | 1997-09-05 | Lucent Technol Inc | 半導体レーザ装置 |
| FR2749447B1 (fr) | 1996-06-04 | 1998-07-10 | France Telecom | Dispositif optique a guide de lumiere semi-conducteur, a faisceau emergent de faible divergence, application aux lasers de fabry-perot et a contre-reaction distribuee |
| JP2820140B2 (ja) * | 1996-12-13 | 1998-11-05 | 日本電気株式会社 | 窒化ガリウム系半導体レーザ |
| US5923689A (en) * | 1998-01-22 | 1999-07-13 | National Science Council | Red semiconductor laser of low beam divergence |
| CN1347581A (zh) * | 1999-03-26 | 2002-05-01 | 松下电器产业株式会社 | 带有应变补偿层的半导体结构及其制备方法 |
| JP4850324B2 (ja) * | 1999-07-16 | 2012-01-11 | アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド | 窒化物半導体素子および窒化物半導体レーザ素子 |
| US6535536B2 (en) * | 2000-04-10 | 2003-03-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element |
| DE10046580A1 (de) * | 2000-09-20 | 2002-04-04 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser |
| JP2002299768A (ja) * | 2001-03-30 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
-
2003
- 2003-10-11 GB GB0323905A patent/GB2406968B/en not_active Expired - Lifetime
-
2004
- 2004-09-16 EP EP04768505A patent/EP1676347B1/en not_active Expired - Lifetime
- 2004-09-16 CA CA002541961A patent/CA2541961A1/en not_active Abandoned
- 2004-09-16 AT AT04768505T patent/ATE369642T1/de not_active IP Right Cessation
- 2004-09-16 JP JP2006530552A patent/JP2007508687A/ja active Pending
- 2004-09-16 DE DE602004008096T patent/DE602004008096T2/de not_active Expired - Lifetime
- 2004-09-16 US US10/595,283 patent/US7409134B2/en not_active Expired - Lifetime
- 2004-09-16 CN CNB2004800349144A patent/CN100454698C/zh not_active Expired - Fee Related
- 2004-09-16 WO PCT/GB2004/003959 patent/WO2005043702A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP1676347A1 (en) | 2006-07-05 |
| CN1886876A (zh) | 2006-12-27 |
| GB2406968A (en) | 2005-04-13 |
| GB0323905D0 (en) | 2003-11-12 |
| US20060274793A1 (en) | 2006-12-07 |
| JP2007508687A (ja) | 2007-04-05 |
| CN100454698C (zh) | 2009-01-21 |
| GB2406968B (en) | 2006-12-06 |
| US7409134B2 (en) | 2008-08-05 |
| DE602004008096D1 (de) | 2007-09-20 |
| DE602004008096T2 (de) | 2008-04-24 |
| WO2005043702A1 (en) | 2005-05-12 |
| EP1676347B1 (en) | 2007-08-08 |
| ATE369642T1 (de) | 2007-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6426515B2 (en) | Semiconductor light-emitting device | |
| US8319229B2 (en) | Optical semiconductor device and method for manufacturing the same | |
| JP5717726B2 (ja) | 大出力パワー用の横結合を持つｄｆｂレーザダイオード | |
| US8494320B2 (en) | Optical element and method for manufacturing the same | |
| EP1022827A2 (en) | Semiconductor laser device and fabrication method | |
| US5272714A (en) | Distributed phase shift semiconductor laser | |
| EP0177221B1 (en) | Semiconductor laser | |
| JPH07221395A (ja) | 多重量子井戸半導体レーザ | |
| US20080112451A1 (en) | Semiconductor Laser Diode With Narrow Lateral Beam Divergence | |
| JPH08242034A (ja) | 分布帰還型半導体レーザ装置 | |
| CA2541961A1 (en) | Control of output beam divergence in a semiconductor waveguide device | |
| US6925103B2 (en) | Gain-coupled DFB laser diode | |
| US5756373A (en) | Method for fabricating optical semiconductor device | |
| US6432735B1 (en) | High power single mode laser and method of fabrication | |
| JPH11195838A (ja) | 分布帰還型半導体レーザ | |
| US6560266B2 (en) | Distributed feedback semiconductor laser | |
| JP2882335B2 (ja) | 光半導体装置およびその製造方法 | |
| Das et al. | InGaAs/AlGaAs quantum well laterally-coupled distributed feedback laser | |
| US20230361535A1 (en) | Semiconductor laser device | |
| Nilsson et al. | DFB laser with nonuniform coupling coefficient realized by double-layer buried grating | |
| JP7511743B2 (ja) | 半導体レーザ装置 | |
| KR100759802B1 (ko) | 매립형 봉우리 도파로 레이저 다이오드 | |
| Aoki et al. | Multi-wavelength DFB laser arrays grown by in-plane thickness control epitaxy | |
| US20040151224A1 (en) | Distributed feedback semiconductor laser oscillating at longer wavelength mode and its manufacture method | |
| JPH07335977A (ja) | 半導体レーザ及び光集積デバイス並びにその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |