CN100452243C - 数据储存装置 - Google Patents

数据储存装置 Download PDF

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Publication number
CN100452243C
CN100452243C CNB038120003A CN03812000A CN100452243C CN 100452243 C CN100452243 C CN 100452243C CN B038120003 A CNB038120003 A CN B038120003A CN 03812000 A CN03812000 A CN 03812000A CN 100452243 C CN100452243 C CN 100452243C
Authority
CN
China
Prior art keywords
magnetic
data
memory device
conduit
data memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038120003A
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English (en)
Chinese (zh)
Other versions
CN1656568A (zh
Inventor
R·P·考布恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EASTGATE INVESTIMENTS Ltd
Original Assignee
EASTGATE INVESTIMENTS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EASTGATE INVESTIMENTS Ltd filed Critical EASTGATE INVESTIMENTS Ltd
Publication of CN1656568A publication Critical patent/CN1656568A/zh
Application granted granted Critical
Publication of CN100452243C publication Critical patent/CN100452243C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Hall/Mr Elements (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
CNB038120003A 2002-03-27 2003-03-25 数据储存装置 Expired - Fee Related CN100452243C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0207160A GB0207160D0 (en) 2002-03-27 2002-03-27 Data storage device
GB0207160.3 2002-03-27

Publications (2)

Publication Number Publication Date
CN1656568A CN1656568A (zh) 2005-08-17
CN100452243C true CN100452243C (zh) 2009-01-14

Family

ID=9933766

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038120003A Expired - Fee Related CN100452243C (zh) 2002-03-27 2003-03-25 数据储存装置

Country Status (19)

Country Link
EP (1) EP1514276A1 (enExample)
JP (1) JP4463564B2 (enExample)
CN (1) CN100452243C (enExample)
CU (1) CU23099A3 (enExample)
EA (1) EA006289B1 (enExample)
GB (1) GB0207160D0 (enExample)
HR (1) HRP20040884A2 (enExample)
IS (1) IS7506A (enExample)
MA (1) MA27296A1 (enExample)
MX (1) MXPA04009307A (enExample)
MY (1) MY135448A (enExample)
NO (1) NO20043958L (enExample)
NZ (1) NZ535781A (enExample)
OA (1) OA12989A (enExample)
PL (1) PL373815A1 (enExample)
TW (1) TWI310938B (enExample)
WO (1) WO2003083874A1 (enExample)
YU (1) YU91604A (enExample)
ZA (1) ZA200407730B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015055A1 (en) * 2005-08-03 2007-02-08 Ingenia Technology Limited Memory access
KR100819142B1 (ko) * 2005-09-29 2008-04-07 재단법인서울대학교산학협력재단 강한 스핀파 발생 방법 및 스핀파를 이용한 초고속 정보처리 스핀파 소자
US8194436B2 (en) 2007-09-19 2012-06-05 Nec Corporation Magnetic random access memory, write method therefor, and magnetoresistance effect element
JP5327543B2 (ja) * 2007-09-20 2013-10-30 日本電気株式会社 磁気ランダムアクセスメモリ
JP5445970B2 (ja) * 2008-04-02 2014-03-19 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
DE112012000271B4 (de) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
JP5653379B2 (ja) 2012-03-23 2015-01-14 株式会社東芝 磁気記憶素子、磁気メモリ及び磁気記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
WO2001031789A2 (en) * 1999-10-25 2001-05-03 Cambridge University Technical Services Limited Magnetic logic device having magnetic quantum dots
CN1335625A (zh) * 2000-07-10 2002-02-13 因芬尼昂技术股份公司 存储单元具有磁阻存储效应的集成存储器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
GB0019506D0 (en) * 2000-08-08 2000-09-27 Univ Cambridge Tech Magnetic element with switchable domain structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
WO2001031789A2 (en) * 1999-10-25 2001-05-03 Cambridge University Technical Services Limited Magnetic logic device having magnetic quantum dots
CN1335625A (zh) * 2000-07-10 2002-02-13 因芬尼昂技术股份公司 存储单元具有磁阻存储效应的集成存储器

Also Published As

Publication number Publication date
ZA200407730B (en) 2005-08-31
WO2003083874A1 (en) 2003-10-09
MXPA04009307A (es) 2005-07-05
EA006289B1 (ru) 2005-10-27
IS7506A (is) 2004-10-15
EA200401263A1 (ru) 2005-04-28
CN1656568A (zh) 2005-08-17
HK1070982A1 (en) 2005-06-30
YU91604A (sh) 2006-05-25
JP4463564B2 (ja) 2010-05-19
PL373815A1 (en) 2005-09-19
TWI310938B (en) 2009-06-11
CU23099A3 (es) 2005-12-20
HRP20040884A2 (en) 2005-02-28
JP2006504210A (ja) 2006-02-02
TW200306536A (en) 2003-11-16
MA27296A1 (fr) 2005-05-02
EP1514276A1 (en) 2005-03-16
NZ535781A (en) 2005-05-27
OA12989A (en) 2006-10-13
NO20043958L (no) 2004-12-27
WO2003083874A8 (en) 2005-02-17
MY135448A (en) 2008-04-30
GB0207160D0 (en) 2002-05-08

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090114

Termination date: 20110325