TWI310938B - Data storage device - Google Patents

Data storage device Download PDF

Info

Publication number
TWI310938B
TWI310938B TW92105590A TW92105590A TWI310938B TW I310938 B TWI310938 B TW I310938B TW 92105590 A TW92105590 A TW 92105590A TW 92105590 A TW92105590 A TW 92105590A TW I310938 B TWI310938 B TW I310938B
Authority
TW
Taiwan
Prior art keywords
magnetic
storage device
data
data storage
magnetic field
Prior art date
Application number
TW92105590A
Other languages
English (en)
Chinese (zh)
Other versions
TW200306536A (en
Inventor
Russell Paul Cowburn
Original Assignee
Eastgate Invest Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastgate Invest Ltd filed Critical Eastgate Invest Ltd
Publication of TW200306536A publication Critical patent/TW200306536A/zh
Application granted granted Critical
Publication of TWI310938B publication Critical patent/TWI310938B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/81Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Hall/Mr Elements (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
TW92105590A 2002-03-27 2003-03-14 Data storage device TWI310938B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0207160A GB0207160D0 (en) 2002-03-27 2002-03-27 Data storage device

Publications (2)

Publication Number Publication Date
TW200306536A TW200306536A (en) 2003-11-16
TWI310938B true TWI310938B (en) 2009-06-11

Family

ID=9933766

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92105590A TWI310938B (en) 2002-03-27 2003-03-14 Data storage device

Country Status (19)

Country Link
EP (1) EP1514276A1 (enExample)
JP (1) JP4463564B2 (enExample)
CN (1) CN100452243C (enExample)
CU (1) CU23099A3 (enExample)
EA (1) EA006289B1 (enExample)
GB (1) GB0207160D0 (enExample)
HR (1) HRP20040884A2 (enExample)
IS (1) IS7506A (enExample)
MA (1) MA27296A1 (enExample)
MX (1) MXPA04009307A (enExample)
MY (1) MY135448A (enExample)
NO (1) NO20043958L (enExample)
NZ (1) NZ535781A (enExample)
OA (1) OA12989A (enExample)
PL (1) PL373815A1 (enExample)
TW (1) TWI310938B (enExample)
WO (1) WO2003083874A1 (enExample)
YU (1) YU91604A (enExample)
ZA (1) ZA200407730B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015055A1 (en) * 2005-08-03 2007-02-08 Ingenia Technology Limited Memory access
KR100819142B1 (ko) * 2005-09-29 2008-04-07 재단법인서울대학교산학협력재단 강한 스핀파 발생 방법 및 스핀파를 이용한 초고속 정보처리 스핀파 소자
US8194436B2 (en) 2007-09-19 2012-06-05 Nec Corporation Magnetic random access memory, write method therefor, and magnetoresistance effect element
JP5327543B2 (ja) * 2007-09-20 2013-10-30 日本電気株式会社 磁気ランダムアクセスメモリ
JP5445970B2 (ja) * 2008-04-02 2014-03-19 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
DE112012000271B4 (de) 2011-02-16 2022-01-05 International Business Machines Corporation Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet
JP5653379B2 (ja) 2012-03-23 2015-01-14 株式会社東芝 磁気記憶素子、磁気メモリ及び磁気記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3774179A (en) * 1971-07-22 1973-11-20 J Wiegand Ferromagnetic storage medium
US3811120A (en) * 1973-04-05 1974-05-14 Bell Telephone Labor Inc Magnetic domain propagation arrangement having channels defined by straight line boundaries
GB9925213D0 (en) * 1999-10-25 1999-12-22 Univ Cambridge Tech Magnetic logic elements
DE10033486A1 (de) * 2000-07-10 2002-01-24 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt
GB0019506D0 (en) * 2000-08-08 2000-09-27 Univ Cambridge Tech Magnetic element with switchable domain structure

Also Published As

Publication number Publication date
ZA200407730B (en) 2005-08-31
WO2003083874A1 (en) 2003-10-09
MXPA04009307A (es) 2005-07-05
EA006289B1 (ru) 2005-10-27
IS7506A (is) 2004-10-15
EA200401263A1 (ru) 2005-04-28
CN1656568A (zh) 2005-08-17
HK1070982A1 (en) 2005-06-30
YU91604A (sh) 2006-05-25
JP4463564B2 (ja) 2010-05-19
PL373815A1 (en) 2005-09-19
CU23099A3 (es) 2005-12-20
CN100452243C (zh) 2009-01-14
HRP20040884A2 (en) 2005-02-28
JP2006504210A (ja) 2006-02-02
TW200306536A (en) 2003-11-16
MA27296A1 (fr) 2005-05-02
EP1514276A1 (en) 2005-03-16
NZ535781A (en) 2005-05-27
OA12989A (en) 2006-10-13
NO20043958L (no) 2004-12-27
WO2003083874A8 (en) 2005-02-17
MY135448A (en) 2008-04-30
GB0207160D0 (en) 2002-05-08

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees