OA12989A - Data storage device. - Google Patents
Data storage device. Download PDFInfo
- Publication number
- OA12989A OA12989A OA1200400256A OA1200400256A OA12989A OA 12989 A OA12989 A OA 12989A OA 1200400256 A OA1200400256 A OA 1200400256A OA 1200400256 A OA1200400256 A OA 1200400256A OA 12989 A OA12989 A OA 12989A
- Authority
- OA
- OAPI
- Prior art keywords
- data storage
- storage device
- magnetic
- accordance
- data
- Prior art date
Links
- 238000013500 data storage Methods 0.000 title claims abstract description 37
- 230000005291 magnetic effect Effects 0.000 claims abstract description 80
- 230000009471 action Effects 0.000 claims abstract description 10
- 230000001902 propagating effect Effects 0.000 claims abstract description 9
- 230000005381 magnetic domain Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 description 14
- 239000000696 magnetic material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000001351 cycling effect Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000010387 memory retrieval Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910000595 mu-metal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Signal Processing For Digital Recording And Reproducing (AREA)
- Hall/Mr Elements (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0207160A GB0207160D0 (en) | 2002-03-27 | 2002-03-27 | Data storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| OA12989A true OA12989A (en) | 2006-10-13 |
Family
ID=9933766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| OA1200400256A OA12989A (en) | 2002-03-27 | 2003-03-25 | Data storage device. |
Country Status (19)
| Country | Link |
|---|---|
| EP (1) | EP1514276A1 (enExample) |
| JP (1) | JP4463564B2 (enExample) |
| CN (1) | CN100452243C (enExample) |
| CU (1) | CU23099A3 (enExample) |
| EA (1) | EA006289B1 (enExample) |
| GB (1) | GB0207160D0 (enExample) |
| HR (1) | HRP20040884A2 (enExample) |
| IS (1) | IS7506A (enExample) |
| MA (1) | MA27296A1 (enExample) |
| MX (1) | MXPA04009307A (enExample) |
| MY (1) | MY135448A (enExample) |
| NO (1) | NO20043958L (enExample) |
| NZ (1) | NZ535781A (enExample) |
| OA (1) | OA12989A (enExample) |
| PL (1) | PL373815A1 (enExample) |
| TW (1) | TWI310938B (enExample) |
| WO (1) | WO2003083874A1 (enExample) |
| YU (1) | YU91604A (enExample) |
| ZA (1) | ZA200407730B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007015055A1 (en) * | 2005-08-03 | 2007-02-08 | Ingenia Technology Limited | Memory access |
| KR100819142B1 (ko) * | 2005-09-29 | 2008-04-07 | 재단법인서울대학교산학협력재단 | 강한 스핀파 발생 방법 및 스핀파를 이용한 초고속 정보처리 스핀파 소자 |
| US8194436B2 (en) | 2007-09-19 | 2012-06-05 | Nec Corporation | Magnetic random access memory, write method therefor, and magnetoresistance effect element |
| JP5327543B2 (ja) * | 2007-09-20 | 2013-10-30 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| JP5445970B2 (ja) * | 2008-04-02 | 2014-03-19 | 日本電気株式会社 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| DE112012000271B4 (de) | 2011-02-16 | 2022-01-05 | International Business Machines Corporation | Ferromagnetische Einheit, die hohe Domänenwandgeschwindigkeiten gewährleistet |
| JP5653379B2 (ja) | 2012-03-23 | 2015-01-14 | 株式会社東芝 | 磁気記憶素子、磁気メモリ及び磁気記憶装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3774179A (en) * | 1971-07-22 | 1973-11-20 | J Wiegand | Ferromagnetic storage medium |
| US3811120A (en) * | 1973-04-05 | 1974-05-14 | Bell Telephone Labor Inc | Magnetic domain propagation arrangement having channels defined by straight line boundaries |
| GB9925213D0 (en) * | 1999-10-25 | 1999-12-22 | Univ Cambridge Tech | Magnetic logic elements |
| DE10033486A1 (de) * | 2000-07-10 | 2002-01-24 | Infineon Technologies Ag | Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt |
| GB0019506D0 (en) * | 2000-08-08 | 2000-09-27 | Univ Cambridge Tech | Magnetic element with switchable domain structure |
-
2002
- 2002-03-27 GB GB0207160A patent/GB0207160D0/en not_active Ceased
-
2003
- 2003-03-14 TW TW92105590A patent/TWI310938B/zh not_active IP Right Cessation
- 2003-03-25 EP EP03745327A patent/EP1514276A1/en not_active Withdrawn
- 2003-03-25 MY MYPI20031073 patent/MY135448A/en unknown
- 2003-03-25 WO PCT/GB2003/001266 patent/WO2003083874A1/en not_active Ceased
- 2003-03-25 CU CU20040210A patent/CU23099A3/es unknown
- 2003-03-25 PL PL03373815A patent/PL373815A1/xx unknown
- 2003-03-25 MX MXPA04009307A patent/MXPA04009307A/es not_active Application Discontinuation
- 2003-03-25 JP JP2003581205A patent/JP4463564B2/ja not_active Expired - Fee Related
- 2003-03-25 CN CNB038120003A patent/CN100452243C/zh not_active Expired - Fee Related
- 2003-03-25 OA OA1200400256A patent/OA12989A/en unknown
- 2003-03-25 NZ NZ535781A patent/NZ535781A/en unknown
- 2003-03-25 YU YU91604A patent/YU91604A/sh unknown
- 2003-03-25 HR HR20040884A patent/HRP20040884A2/hr not_active Application Discontinuation
- 2003-03-25 EA EA200401263A patent/EA006289B1/ru not_active IP Right Cessation
-
2004
- 2004-09-21 MA MA27872A patent/MA27296A1/fr unknown
- 2004-09-21 NO NO20043958A patent/NO20043958L/no unknown
- 2004-09-23 ZA ZA200407730A patent/ZA200407730B/en unknown
- 2004-10-15 IS IS7506A patent/IS7506A/is unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ZA200407730B (en) | 2005-08-31 |
| WO2003083874A1 (en) | 2003-10-09 |
| MXPA04009307A (es) | 2005-07-05 |
| EA006289B1 (ru) | 2005-10-27 |
| IS7506A (is) | 2004-10-15 |
| EA200401263A1 (ru) | 2005-04-28 |
| CN1656568A (zh) | 2005-08-17 |
| HK1070982A1 (en) | 2005-06-30 |
| YU91604A (sh) | 2006-05-25 |
| JP4463564B2 (ja) | 2010-05-19 |
| PL373815A1 (en) | 2005-09-19 |
| TWI310938B (en) | 2009-06-11 |
| CU23099A3 (es) | 2005-12-20 |
| CN100452243C (zh) | 2009-01-14 |
| HRP20040884A2 (en) | 2005-02-28 |
| JP2006504210A (ja) | 2006-02-02 |
| TW200306536A (en) | 2003-11-16 |
| MA27296A1 (fr) | 2005-05-02 |
| EP1514276A1 (en) | 2005-03-16 |
| NZ535781A (en) | 2005-05-27 |
| NO20043958L (no) | 2004-12-27 |
| WO2003083874A8 (en) | 2005-02-17 |
| MY135448A (en) | 2008-04-30 |
| GB0207160D0 (en) | 2002-05-08 |
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