CN100452117C - 显示器 - Google Patents
显示器 Download PDFInfo
- Publication number
- CN100452117C CN100452117C CNB2004800162693A CN200480016269A CN100452117C CN 100452117 C CN100452117 C CN 100452117C CN B2004800162693 A CNB2004800162693 A CN B2004800162693A CN 200480016269 A CN200480016269 A CN 200480016269A CN 100452117 C CN100452117 C CN 100452117C
- Authority
- CN
- China
- Prior art keywords
- light
- electrode
- insulation course
- emitting component
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 claims abstract 2
- 238000009413 insulation Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 46
- 238000002834 transmittance Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 20
- 238000004020 luminiscence type Methods 0.000 claims description 18
- 238000000149 argon plasma sintering Methods 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims 4
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 27
- 239000012044 organic layer Substances 0.000 description 16
- 239000012212 insulator Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- -1 tetraethyl orthosilicate salt Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003293113A JP2005063840A (ja) | 2003-08-13 | 2003-08-13 | 自発光表示装置及び有機el表示装置 |
JP293113/2003 | 2003-08-13 | ||
PCT/JP2004/011617 WO2005017862A1 (ja) | 2003-08-13 | 2004-08-12 | ディスプレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1806268A CN1806268A (zh) | 2006-07-19 |
CN100452117C true CN100452117C (zh) | 2009-01-14 |
Family
ID=34190981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800162693A Expired - Fee Related CN100452117C (zh) | 2003-08-13 | 2004-08-12 | 显示器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060065904A1 (zh) |
EP (1) | EP1655708A1 (zh) |
JP (1) | JP2005063840A (zh) |
KR (1) | KR100753258B1 (zh) |
CN (1) | CN100452117C (zh) |
TW (1) | TWI279750B (zh) |
WO (1) | WO2005017862A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008509565A (ja) | 2004-08-13 | 2008-03-27 | ノヴァレッド・アクチエンゲゼルシャフト | 発光成分用積層体 |
DE102004041371B4 (de) * | 2004-08-25 | 2007-08-02 | Novaled Ag | Bauelement auf Basis einer organischen Leuchtdiodeneinrichtung und Verfahren zur Herstellung |
EP1705727B1 (de) * | 2005-03-15 | 2007-12-26 | Novaled AG | Lichtemittierendes Bauelement |
US20060226429A1 (en) * | 2005-04-08 | 2006-10-12 | Sigalas Mihail M | Method and apparatus for directional organic light emitting diodes |
ATE381117T1 (de) | 2005-04-13 | 2007-12-15 | Novaled Ag | Anordnung für eine organische leuchtdiode vom pin-typ und verfahren zum herstellen |
EP1806795B1 (de) * | 2005-12-21 | 2008-07-09 | Novaled AG | Organisches Bauelement |
DE602006001930D1 (de) * | 2005-12-23 | 2008-09-04 | Novaled Ag | tur von organischen Schichten |
EP1808909A1 (de) | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
JP2007258113A (ja) * | 2006-03-24 | 2007-10-04 | Toshiba Matsushita Display Technology Co Ltd | 発光装置 |
EP1848049B1 (de) * | 2006-04-19 | 2009-12-09 | Novaled AG | Lichtemittierendes Bauelement |
KR100879294B1 (ko) * | 2006-06-12 | 2009-01-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
DE102007019260B4 (de) * | 2007-04-17 | 2020-01-16 | Novaled Gmbh | Nichtflüchtiges organisches Speicherelement |
JP5219493B2 (ja) * | 2007-11-14 | 2013-06-26 | キヤノン株式会社 | 発光素子及びそれを用いた発光装置 |
DE102008036062B4 (de) | 2008-08-04 | 2015-11-12 | Novaled Ag | Organischer Feldeffekt-Transistor |
DE102008036063B4 (de) * | 2008-08-04 | 2017-08-31 | Novaled Gmbh | Organischer Feldeffekt-Transistor |
GB2464111B (en) * | 2008-10-02 | 2011-06-15 | Cambridge Display Tech Ltd | Organic electroluminescent device |
JP2011222421A (ja) * | 2010-04-13 | 2011-11-04 | Asahi Kasei E-Materials Corp | 発光デバイス |
JP5763517B2 (ja) * | 2011-12-16 | 2015-08-12 | Jx日鉱日石エネルギー株式会社 | 有機el素子 |
WO2013073434A1 (ja) * | 2011-11-18 | 2013-05-23 | Jx日鉱日石エネルギー株式会社 | 有機el素子 |
US9991463B2 (en) * | 2012-06-14 | 2018-06-05 | Universal Display Corporation | Electronic devices with improved shelf lives |
JP5758366B2 (ja) * | 2012-09-24 | 2015-08-05 | 株式会社東芝 | 有機電界発光素子および発光装置 |
KR102284214B1 (ko) * | 2014-09-23 | 2021-08-02 | 삼성디스플레이 주식회사 | 회색 컬러필터를 포함하는 표시장치 |
KR101844324B1 (ko) * | 2015-09-23 | 2018-04-03 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
WO2023095622A1 (ja) * | 2021-11-26 | 2023-06-01 | ソニーセミコンダクタソリューションズ株式会社 | 発光素子、表示装置及び電子機器 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04328294A (ja) * | 1991-04-26 | 1992-11-17 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JP2000284726A (ja) * | 1999-03-31 | 2000-10-13 | Seiko Epson Corp | 表示装置 |
JP2001265240A (ja) * | 2000-03-16 | 2001-09-28 | Sony Corp | 直視型表示装置 |
JP2001291595A (ja) * | 2000-02-03 | 2001-10-19 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2002008850A (ja) * | 2000-04-21 | 2002-01-11 | Semiconductor Energy Lab Co Ltd | 自発光装置及びそれを用いた電気器具 |
JP2002062856A (ja) * | 2000-06-06 | 2002-02-28 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
JP2003109749A (ja) * | 2001-09-25 | 2003-04-11 | Korea Advanced Inst Of Science & Technol | 高発光効率の光結晶有機発光素子 |
CN1411325A (zh) * | 2001-10-03 | 2003-04-16 | 日本电气株式会社 | 发光装置及其制备方法和使用该发光装置的显示器 |
JP2003163075A (ja) * | 2001-11-28 | 2003-06-06 | Nec Corp | 有機el素子およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091194A (en) * | 1995-11-22 | 2000-07-18 | Motorola, Inc. | Active matrix display |
TW516164B (en) * | 2000-04-21 | 2003-01-01 | Semiconductor Energy Lab | Self-light emitting device and electrical appliance using the same |
WO2002056071A2 (en) * | 2000-12-14 | 2002-07-18 | Univ Florida | Method for fabrication of plastic fiber optic blocks and large flat panel displays |
TWI257828B (en) * | 2001-05-31 | 2006-07-01 | Seiko Epson Corp | EL device, EL display, EL illumination apparatus, liquid crystal apparatus using the EL illumination apparatus and electronic apparatus |
US7148513B2 (en) * | 2001-06-20 | 2006-12-12 | Reveo, Inc | Backlight units for liquid crystal displays |
KR100581850B1 (ko) * | 2002-02-27 | 2006-05-22 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치와 그 제조 방법 |
US20040001969A1 (en) * | 2002-06-27 | 2004-01-01 | Eastman Kodak Company | Device containing green organic light-emitting diode |
JP4240276B2 (ja) * | 2002-07-05 | 2009-03-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP4495978B2 (ja) * | 2003-03-07 | 2010-07-07 | 日東電工株式会社 | 有機エレクトロルミネッセンス素子とこの素子を用いた面光源および表示装置 |
-
2003
- 2003-08-13 JP JP2003293113A patent/JP2005063840A/ja active Pending
-
2004
- 2004-08-12 KR KR1020057023898A patent/KR100753258B1/ko active IP Right Grant
- 2004-08-12 EP EP04771592A patent/EP1655708A1/en not_active Withdrawn
- 2004-08-12 CN CNB2004800162693A patent/CN100452117C/zh not_active Expired - Fee Related
- 2004-08-12 WO PCT/JP2004/011617 patent/WO2005017862A1/ja active Application Filing
- 2004-08-13 TW TW093124430A patent/TWI279750B/zh active
-
2005
- 2005-11-10 US US11/270,729 patent/US20060065904A1/en not_active Abandoned
-
2009
- 2009-07-09 US US12/500,347 patent/US20090267101A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04328294A (ja) * | 1991-04-26 | 1992-11-17 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JP2000284726A (ja) * | 1999-03-31 | 2000-10-13 | Seiko Epson Corp | 表示装置 |
JP2001291595A (ja) * | 2000-02-03 | 2001-10-19 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2001265240A (ja) * | 2000-03-16 | 2001-09-28 | Sony Corp | 直視型表示装置 |
JP2002008850A (ja) * | 2000-04-21 | 2002-01-11 | Semiconductor Energy Lab Co Ltd | 自発光装置及びそれを用いた電気器具 |
JP2002062856A (ja) * | 2000-06-06 | 2002-02-28 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
JP2003109749A (ja) * | 2001-09-25 | 2003-04-11 | Korea Advanced Inst Of Science & Technol | 高発光効率の光結晶有機発光素子 |
CN1411325A (zh) * | 2001-10-03 | 2003-04-16 | 日本电气株式会社 | 发光装置及其制备方法和使用该发光装置的显示器 |
JP2003163075A (ja) * | 2001-11-28 | 2003-06-06 | Nec Corp | 有機el素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005017862A1 (ja) | 2005-02-24 |
TW200506777A (en) | 2005-02-16 |
KR20060027337A (ko) | 2006-03-27 |
KR100753258B1 (ko) | 2007-08-29 |
TWI279750B (en) | 2007-04-21 |
US20090267101A1 (en) | 2009-10-29 |
CN1806268A (zh) | 2006-07-19 |
JP2005063840A (ja) | 2005-03-10 |
US20060065904A1 (en) | 2006-03-30 |
EP1655708A1 (en) | 2006-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: TOSHIBA MOBILE DISPLAY CO., LTD. Free format text: FORMER NAME: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY LTD. Owner name: JAPAN DISPLAY MIDDLE INC. Free format text: FORMER NAME: TOSHIBA MOBILE DISPLAY CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Saitama Prefecture, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Toshiba Corp. Address before: Saitama Prefecture, Japan Patentee before: Toshiba Mobile Display Co.,Ltd. Patentee before: Toshiba Corp. |
|
CP03 | Change of name, title or address |
Address after: Saitama Prefecture, Japan Patentee after: Toshiba Mobile Display Co.,Ltd. Patentee after: Toshiba Corp. Address before: Tokyo, Japan Patentee before: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY Co.,Ltd. Patentee before: Toshiba Corp. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Toshiba Corp. Address before: Saitama Prefecture, Japan Patentee before: JAPAN DISPLAY Inc. Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20151203 Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Address before: Tokyo, Japan Patentee before: JAPAN DISPLAY Inc. Patentee before: Toshiba Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20180812 |
|
CF01 | Termination of patent right due to non-payment of annual fee |