CN100448005C - Photoelectric integrative infrared receiver and packaging method - Google Patents
Photoelectric integrative infrared receiver and packaging method Download PDFInfo
- Publication number
- CN100448005C CN100448005C CNB2005100428674A CN200510042867A CN100448005C CN 100448005 C CN100448005 C CN 100448005C CN B2005100428674 A CNB2005100428674 A CN B2005100428674A CN 200510042867 A CN200510042867 A CN 200510042867A CN 100448005 C CN100448005 C CN 100448005C
- Authority
- CN
- China
- Prior art keywords
- chip
- pin
- lead frame
- temperature
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The present invention relates to a photoelectric integrative infrared receiver which comprises a PIN optical detection chip, a preamplifier chip and a lead frame, wherein the PIN optical detection chip and the pre-amplifier chip are arranged in the same casing. The present invention is characterized in that the PIN optical detection chip is fixed to the lead frame by insulation paste, and the preamplifier chip is fixed to the lead frame by electric conduction paste. The casing is a plastic-enclosed casing formed by the method that a hemispherical surface and a cuboid are combined together in a smooth transition mode. The casing is made of pure epoxide resin; the inner and the outer surfaces of the hemispherical casing are smooth and do not have traces, and the smoothness thereof is Ra 0.2 to 0.4. The inner and the outer surfaces of the cuboid casing are provided with dark rough surfaces, and the smoothness is Ra 1.6 to 1.4. A shielding case is packaged in a plastic-enclosed. The photoelectric integrative infrared receiver which has the advantages of low cost, small volume, high sensitivity, strong anti-interference ability and high reliability can filter out all visible light and only enables infrared light of which the wavelength is longer than 820mm to pass through. The present invention can be applied to various household appliances. The present invention mainly solves the problems that the brittleness of pure epoxy plastics is large, the pure epoxy plastics are easy to damage, crack and broken off at time of die cutting, and a leading wire with the length of 23.30mm can be deformed when treated by die cutting.
Description
Technical field
The present invention relates to manufacturing technology field, intelligent field, particularly photoelectric integrative infrared receiver and the method for packing that infrared detector and preamplifier are packaged together with device.
Background technology
The nineties is to realize that further electronic product is light, thin, little, automation (remote control) development, the external optoelectronic integration plastic packaging technology that adopts, infrared detector and preamplifier are fitted together, and its structural behaviour is better than the metal shell reception amplifier of discrete component assembling.It has, and cost is low, volume is little, highly sensitive, low in energy consumption, distinguishing features such as antijamming capability strong, good reliability, is widely used in television set, video tape recorder, satellite receiver, air conditioner, VCD, DVD, data communication etc.
Enter 21 century, domestic indivedual enterprises with three kinds of capital begin trial-production.My company finds that from 2002 according to market survey nearly all household electrical appliances all need remote control, and this purposes has widely been brought limitless business opportunity to infrared remote receiver, simultaneously its design and encapsulation is had higher requirement.Product on the market or be external import, or be the metal shell receiver of discrete component assembling, volume is big, and sensitivity is low, and poor reliability can not satisfy the household appliances requirement.Pertinent literature discloses the infrared remote receiver that adopts the optoelectronic integration encapsulation technology, Infrared Detectors is enclosed in preamplifier, the employing epoxy resin that these products have is as plastic-sealed body, and the inserts that has plenty of doping filtering visible light in epoxy resin is as plastic-sealed body; These two kinds of materials are as plastic-sealed body abundant filtering visible light still, and the anti-light jamming performance of receiver can not satisfy the needs of data communication and household appliances.Pure epoxy resin can be comprehensively fully the filtering visible light, see through infrared light, but strict to plastic package process, need accomplish does not have the cavity in the plastic-sealed body, is obstructed when preventing that the cavity from causing infrared light to see through; And pure epoxy plastics fragility is too big, and plastic-sealed body is prone to breakage and crack phenomenon when die-cut, even fracture; The present invention has solved the problems referred to above through development test repeatedly.
Summary of the invention
The object of the present invention is to provide that a kind of cost is low, volume is little, highly sensitive, antijamming capability strong, good reliability, receiving range be greater than 10 meters, can be used for the photoelectric integrative infrared receiver of all kinds of household appliances.
To achieve these goals, the technical solution used in the present invention is as follows; A kind of photoelectric integrative infrared receiver, comprise the PIN optical detection chip and the preamplifier chip that are built in same housing, lead frame is characterized in that: PIN optical detection chip is fixed in lead frame by insulating cement, and preamplifier chip is fixed in lead frame by conducting resinl; Housing is that hemisphere face and cuboid seamlessly transit the plastic packaging housing that is combined as a whole, housing is made by pure epoxy resin, the inside and outside smooth surface of hemisphere face housing is seamless, its fineness is Ra 0.2～0.4, the inside and outside surface of rectangle housing is the hair side of obfuscation, and its fineness is Ra 1.6～1.4; Radome is encapsulated in the plastic-sealed body.
Because encapsulating housing of the present invention is the hemisphere face shape and structure, for the light that enters from the outside, it is equivalent to convex lens, according to optical principle, has the optically focused effect, and the infrared light that sees through is collected on the PIN (photodiode); For the infrared light that sends from the PIN that is positioned at encapsulating housing inside, hemisphere face is equivalent to concavees lens, forms directional light when infrared signal passes.The radome of conventional products is exposed to the colloid outside, and radome of the present invention is encapsulated in the plastic-sealed body, and so both the maskable preamplifier was not disturbed by infrared light, can guarantee the printing opacity effect of photodiode again.The encapsulating housing of hemisphere face shape and structure uses the pure epoxy resin plastics, improved the anti-light jamming performance of receiver, can the selectivity printing opacity, the whole visible lights of filtering, the infrared light of wavelength more than 820mm passed through, so highly sensitive, antijamming capability is strong, good reliability.Pin leads length can be made as 23.30mm, can be used for the welding of jack type pcb board.
Another object of the present invention is to provide the manufacture method of before-mentioned products photoelectric integrative infrared receiver.
The manufacture method of photoelectric integrative infrared receiver of the present invention is according to the following steps:
Make that mould, die bonding, the pressure welding of twin-core sheet, the spherical plastic packaging moulding of pure epoxy resin, long lead are die-cut, plating, test, reliability test.
1. making mould
According to the photoelectric integrative infrared receiver outline drawing of design, plastic packaging product figure with cut muscle shaping figure mfg. moulding die;
2. die bonding (D/B)
2.1PIN optical detection chip and the cutting of preamplifier chip attenuate: 4～6 inches disks are carried out attenuate by the specification and the standard of design, and then cut;
2.2 die bonding
2.2.1 determine conducting resinl and insulating cement; Utilize die Bonder with insulating cement with PIN optical detection die bonding on lead frame; With conducting resinl preamplifier chip is bonded on the lead frame, PIN optical detection chip and preamplifier chip roughly are positioned at same plane,
2.2.2 core is bonding PIN chip main technique condition on the insulating cement: 0.12～0.13Mpa air pressure, time of delay, 90～120ms vibrated 1 time; Last core process adopts exhausting system and logical nitrogen technology;
2.2.3 with the main technique condition of conducting resinl to core on the preamplifier chip: 0.02～0.05Mpa air pressure, time of delay, 10～50ms closed vibration, guaranteed conducting resinl 100% spill-out, and last core process adopts exhausting system and leads to nitrogen technology;
2.2.4 determine conducting resinl and curing process and the cure profile figure of insulating cement under same low-temperature setting condition:
Curing process: low-temperature setting, the stage heats up; It is in 50 ℃ the baking oven that the lead frame of bonding PIN chip and preamplifier chip is placed temperature, with 5 minutes oven temperature is evenly risen to 80 ℃ from 50 ℃, is incubated 30 minutes; With 20 minutes oven temperature is evenly risen to 150 ℃ from 80 ℃ again, be incubated 15 minutes; With 30 minutes oven temperature is evenly dropped to 50 ℃ from 150 ℃;
3. twin-core sheet pressure welding (W/B)
The optical detection chip is connected with the preamplifier chip bonding wire; Chip is connected with the frame carrier bonding wire; Chip with the lead-in wire between bonding wire be connected; The wire welding area temperature is 200 ℃, and the preheating zone temperature is 190 ℃; Framework in the speed of service of workbench is: the each stepping of 6s/ (normally being the each stepping of 4s/) PIN chip and preamplifier chip, each chip and lead frame carrier, lead welding are used
25 μ m spun golds;
4. the spherical plastic packaging moulding of pure epoxy resin
4.1 the plastic packaging material specification is determined: determine specification
The serial pure epoxy resin plastic packaging material of eastern NT300H of day of 48 * 56g * 2/ mould;
The processing 4.2 plastic packaging material is risen again: with the spherical plastic packaging material of pure epoxy resin,, tie the sack protection against the tide immediately, when ambient humidity is higher than 50%RH, add drier in the packing case according to the common process processing of rising again;
4.3 molding technological condition
Material cake warm-up time: 10～15 seconds;
Mold temperature: 140 ℃～150 ℃;
Injection time: 25～45 seconds;
Injection pressure: 4～5MPa;
Clamping pressure: 11～16MPa;
The precuring time: 175～185 seconds;
4.4 clear mould: adopt the clear mould of moulding formula, cleaning material MCL-200C etc.;
Mould adds vacuum extractor in the plastic packaging filling process, prevents to produce in the plastic-sealed body cavity;
5. die-cut
5.1 die-cut content
5.1.1 dash useless moulding: wash away the waste plastics between the waste plastics between the pin and two plastic-sealed bodies connect in the middle of the plastic-sealed body;
The muscle 5.1.2 hit: wash away the middle company's muscle of pin and pin;
Separate 5.1.3 cut off: the company's muscle that cuts off pin end and lead frame frame;
5.2 clicking technique
Mould the punch grinding 0.18～0.25mm that steps down 5.2.1 liquidate, making the useless residual 0.25mm of being retained in that moulds; (common process technical standard≤0.308mm), guarantee that colloid the crack do not occur at parting surface, and then guarantee that colloid is not damaged;
5.2.2 keep useless the moulding between muscle in two, the middle useless residual 0.4mm that is that moulds; Punch height reservation 0.4mm is moulded in dashing of middle muscle position;
Add the pre-determined bit piece 5.2.3 cut muscle mould length direction both sides; Add the prelocalization baffle plate between the muscle in cutting muscle Mould Breadth degree direction front end, pipe leg, the width of this prelocalization baffle plate is than the little 0.05mm of pipe leg width spacing; And this prelocalization plate washer is at the positive direction hold-down frame; Cutting muscle Mould Breadth degree direction rear end, with back location plate washer the pipe leg length is being carried out spacingly, the distortion of correction framework simultaneously, falling curvedly, product pipe leg shearing length is consistent; The structure and the gap of adjustment, reconditioning knife edge die; The locating piece place steps down to adding; Fixed head is fixed the inlaid piece of mould position; Lower bolster is fixed fixed head;
6. electroplate
6.1 the softening flash that goes:
With the flash on the softening liquid medicine removal lead-in wire, softening time 45～55min;
6.2 lead-in wire is electroplated: select hanger for use, the automatic plating line of 2# has guaranteed the uniformity of long lead coating;
7. test
Carry out functional test by instructions for use, reject defective item;
8. reliability test
8.1 humiture storage test: 85 ℃ ± 2 ℃, 85%RH ± 5%RH, 240h;
8.2 temperature shock test:
8.3 high-temperature vapor is pressed test: 121 ℃ of temperature, 100%RH, air pressure 0.205MPa, 168h;
8.4 high temperature storage test: 150 ℃ of temperature (0 ,+10 ℃), 240h;
Product through experiment must meet GB/T12750-II and JEDC standard.
The beneficial effect of the manufacture method of photoelectric integrative infrared receiver of the present invention:
1, chip assembling package design, the optical detection chip adopts different binding material assemblings simultaneously with preamplifier chip, adopts same curing temperature, promptly saves and goes up the core time, can reduce stoving time again, and energy savings helps automated production, raises the efficiency.
2, core is bonding PIN chip on the insulating cement, promptly 0.12～0.13Mpa air pressure, short time are that 1 time technology is promptly vibrated in time of delay 90～120ms, low vibration to have adopted hyperbar, and common process is 0.04Mpa air pressure, time of delay 40ms, vibration 2～3 times, thereby has overcome the phenomenon of the easy wire drawing of insulating cement; Core is bonding preamplifier chip on the conducting resinl, adopts low pressure 0.02～0.05Mpa air pressure, time of delay 10～50ms, does not vibrate.Two material (conducting resinl, the insulating cement) secondaries of twin-core sheet are bonding, and same low temperature solidifies, and has optimized technology, and because of weak point curing time, the curing cost is low, raising output, avoids hot setting easily to cause the baking oven oxidation; In addition,, adopt exhausting system and logical nitrogen technology, can prevent effectively that the volatilization of silver slurry is to the contamination and the oxidation of chip and framework coating in the bake process because when solidifying; The pin hole that can avoid residual gas to produce has again increased bonding fastness; Solidify the shearing force 〉=24N of back chip and adhesives, meet the GJB548A-96 standard.
3, the bonding chip chamber bonding wire of twin-core sheet different materials, the wire welding area temperature is 200 ℃, and common process wire welding area temperature is 220 ℃; The preheating zone temperature is 190 ℃, and common process preheating zone temperature is 200 ℃; And accelerate framework in the speed of service of workbench, reduced heating time, thereby prevent insulating cement jaundice, denaturalization phenomenon.
4, lead-in wire is die-cut, guarantees that the lead-in wire of 23.30mm is indeformable.
Description of drawings
Fig. 1 is a photoelectric integrative infrared receiver front view of the present invention;
Fig. 2 is the left view of Fig. 1;
Fig. 3 is the A-A view among Fig. 1;
Fig. 4 is the last core stereogram of manufacture method of the present invention;
Fig. 5 is the last core profile of manufacture method of the present invention;
Fig. 6 is cure profile figure behind the core on the manufacture method of the present invention;
Fig. 7 is the pressure welding figure of manufacture method of the present invention;
Fig. 8 is that the product station of manufacture method of the present invention requires figure;
Punch figure after the improvement of Fig. 9 manufacture method of the present invention;
Figure 10 is that the muscle shaping dies of cutting of manufacture method of the present invention improves partly schematic diagram;
Among the figure: 1-housing, 101-hemisphere face housing, 102-rectangle housing, 2-PIN optical detection chip, 3-preamplifier chip, 4-lead frame, the 5-insulating cement, 6-conducting resinl, 7-radome, 801-chip bonding wire, 802-A bonding wire, 803-B bonding wire, the 804-C bonding wire, 804-D bonding wire, 805-E bonding wire, the 806-F bonding wire, 807-G bonding wire, 9-lead-in wire, useless moulding between the 1001-pin, useless the moulding between 1002-two plastic-sealed bodies connect, useless the moulding between the 1003-lead-in wire, company's muscle of 1004-lead terminal, H-dashes and moulds the punch height, locatees plate washer behind the 11-, 12-prelocalization plate washer, 13-cuts the muscle die plate insert, and 14-cuts off punch, the 15-fixed head, the 16-lower bolster
Embodiment
Photoelectric integrative infrared receiver embodiment:
As shown in Figures 1 to 4: a kind of photoelectric integrative infrared receiver, comprise the PIN optical detection chip 2 and preamplifier chip 3 that are built in same housing 1, lead frame 4, it is characterized in that: PIN optical detection chip 2 is fixed in lead frame 4 by insulating cement 5, and preamplifier chip 3 is fixed in lead frame 4 by conducting resinl 6; Housing 1 is that hemisphere face housing 101 seamlessly transits the plastic packaging housing that is combined as a whole with cuboid housing 102, housing 1 is made by pure epoxy resin, the inside and outside smooth surface of hemisphere face housing 101 is seamless, its fineness Ra 0.2 ~ 0.4, rectangle housing 102 inside and outside surfaces are hair sides of obfuscation, its fineness Ra 1.6 ~ 1.4; Radome 7 is encapsulated in the plastic-sealed body.
Long 6.00 ± the 0.20mm of plastic-sealed body, the wide 6.7 ± 0.20mm of plastic-sealed body, plastic-sealed body thick (not comprising hemisphere) 3.8 ± 0.20mm, comprise the hemisphere plastic-sealed body thick be 5.6 ± 0.20mm, lead spacing 2.54 ± 0.20mm, pin leads length is 23.30mm.
The manufacture method embodiment 1 of photoelectric integrative infrared receiver:
1. making mould
According to the photoelectric integrative infrared receiver outline drawing of design, plastic packaging product figure with cut muscle shaping figure mfg. moulding die;
2. die bonding (D/B)
2.1PIN optical detection chip and the cutting of preamplifier chip attenuate: 4～6 inches disks are carried out attenuate by the specification and the standard of design, and then cut;
2.2 die bonding
2.2.1 determine 8360 conducting resinls and OT0149-1 insulating cement; Utilize the AD829A die Bonder, this machine is increased input lifter automatic feeding function; Bonding die at twice is referring to Fig. 4 and Fig. 5: with 8360 conducting resinls 6 preamplifier chip 3 is bonded on the lead frame earlier, glues with OT0149-1 insulating cement 5 PIN optical detection chip 2 is bonded on the lead frame 4; The PIN chip is preposition roughly to be positioned at same plane with amplifier chip;
2.2.2OT0149-1 core is bonding PIN chip main technique condition on the insulating cement: 0.12～0.13Mpa air pressure, time of delay, 90～120ms vibrated 1 time; Last core process adopts exhausting system and logical nitrogen technology;
2.2.3 with the main technique condition of conducting resinl to core on the preamplifier chip: 0.02～0.05Mpa air pressure, time of delay, 10～50ms closed vibration, guaranteed conducting resinl 100% spill-out, and last core process adopts exhausting system and leads to nitrogen technology;
2.2.4 determine conducting resinl and curing process and the cure profile figure of insulating cement under same low-temperature setting condition:
Curing process: low-temperature setting, the stage heats up; It is in 50 ℃ the baking oven that the lead frame of bonding PIN chip and preamplifier chip is placed temperature, with 5 minutes oven temperature is evenly risen to 80 ℃ from 50 ℃, is incubated 30 minutes; With 20 minutes oven temperature is evenly risen to 150 ℃ from 80 ℃ again, be incubated 15 minutes; With 30 minutes oven temperature is evenly dropped to 50 ℃ from 150 ℃; Cure profile figure is as shown in Figure 6: abscissa express time among the figure, and to be divided into unit, ordinate is represented temperature, ℃ being unit; Solidify back chip shearing force 〉=24N, meet the GJB548A-96 standard;
3. twin-core sheet pressure welding (W/B)
As shown in Figure 7: (first soldered ball is the routing function again for the BSOB function of employing KS1488PLUS equipment, the chip that prevents at second may produce the crater, the aluminium pad weighs wounded) PIN optical detection chip 2 and preamplifier chip 3 are welded by chip bonding wire 801, PIN optical detection chip 2 is welded by A bonding wire 802 with lead frame 4, and preamplifier chip 3 is welded by B bonding wire 803, C bonding wire 804, D bonding wire 805 with lead frame 4; Preamplifier chip 3 is welded by E bonding wire 806, F bonding wire 807 with lead-in wire 9; The wire-to-wire clearance of B bonding wire 803, C bonding wire 804, D bonding wire 805 more than twice line footpath, line and short-circuit between conductors when preventing from not dash silk and plastic packaging; The wire welding area temperature is 200 ℃, and the preheating zone temperature is 190 ℃; Framework in the speed of service of workbench is: the each stepping of 6s/ (normally being the each stepping of 4s/); Chip bonding wire 801, A bonding wire 802 to F bonding wires 807 etc. are
25 μ m spun golds; Bonding wire pulling force 〉=5gf meets the GB4590 standard code;
4. the spherical plastic packaging moulding of pure epoxy resin
4.1 the plastic packaging material specification is determined: determine specification
The serial pure epoxy resin plastic packaging material of eastern NT300H of day of 48 * 56g * 2/ mould;
The processing 4.2 plastic packaging material is risen again: with the spherical plastic packaging material of pure epoxy resin,, tie the sack protection against the tide immediately, when ambient humidity is higher than 50%RH, add drier in the packing case according to the common process processing of rising again;
4.3 molding technological condition
Material cake warm-up time: 15 seconds;
Mold temperature: 150 ℃;
Injection time: 25 seconds;
Injection pressure: 4MPa;
Clamping pressure: 11MPa;
The precuring time: 175 seconds;
4.4 clear mould: adopt the clear mould of moulding formula, cleaning material MCL-200C;
Mould adds vacuum extractor in the plastic packaging filling process, prevents to produce in the plastic-sealed body cavity;
5. die-cut
5.1 die-cut content
5.1.1 dash useless moulding: referring to Fig. 8: useless the moulding between the pin in the middle of the plastic-sealed body washed out; Useless moulding between the connection of two plastic-sealed bodies washed out;
The muscle 5.1.2 hit: the company's muscle in the middle of pin and the pin is cut away, make external pin middle continuous;
Separate 5.1.3 cut off: terminal line with the lead frame frame pin cuts off, and makes between the external pin end not link to each other;
5.2 clicking technique
Mould the punch grinding 0.20～0.25mm that steps down 5.2.1 liquidate, reach to dash and mould punch, solved that breakage and crack phenomenon appear in plastic-sealed body when hitting muscle apart from colloid 0.18mm～0.25mm; Make the useless residual 0.25mm of being retained in that moulds; (common process technical standard≤0.308mm), guarantee that colloid the crack do not occur at parting surface, and then guarantee that colloid is not damaged;
5.2.2 keep useless the moulding between muscle in two, the middle useless residual 0.4mm that is that moulds; As shown in Figure 9: punch height H reservation 0.4mm is moulded in dashing of middle muscle position; (conventional dashing moulded punch height H reservation 0.62mm before improving)
5.2.3 as shown in figure 10: cut muscle mould length direction both sides and add the pre-determined bit piece, promptly add location, back plate washer 11 in the both sides of housing 1, its effect, pre-determined bit spacing to the lengths of frame direction makes framework can't move at length direction; In cutting muscle Mould Breadth degree direction front end, pin, add prelocalization baffle plate 12 between the muscle, 1. its effect guarantees the cut-out size of product length direction, 2. to L/F (expression lead frame,) pin connect frame and compress, guarantee that L/F is when the location, do not stand up promptly smooth location because plastic-sealed body one lateral deviation is heavy.3. between the muscle, gap design was 0.05mm during this prelocalization baffle plate was placed on, guarantee L/F in the precision of length direction within 0.025 millimeter; Cut the muscle mould insert 13 with the fit clearance of cutting off punch be 0.015 millimeter, guarantee to cut off burr＜0.05 millimeter, and pin length carried out spacing, the distortion of correction framework simultaneously, fall curvedly, product pipe leg shearing length is consistent; The effect of cutting off punch 14 is the cut-out to the product pin, the structure and the gap that adjust, punch are cut off in reconditioning, to adding locating piece step down; Fixed head 15, its effect are that the inlaid piece of mould position is fixed; Lower bolster 16 is that fixed head 15 is fixed;
6. electroplate
6.1 the softening flash that goes:
With the flash on the softening liquid medicine SYD711 removal lead-in wire, softening time 45min; Not only remove the flash on the lead-in wire but also can prevent from too to corrode; Prevent sphere damage and grow dim, influence light transmission;
6.2 lead-in wire is electroplated: select hanger for use, the automatic plating line of 2# has guaranteed the uniformity of long lead coating;
7. test
Carry out functional test by instructions for use, reject defective item;
8. reliability test
8.1 humiture storage test: 85 ℃ ± 2 ℃, 85%RH ± 5%RH, 240h;
8.2 temperature shock test:
8.3 high-temperature vapor is pressed test: 121 ℃ of temperature, 100%RH, air pressure 0.205Mpa, 168h;
8.4 high temperature storage test: 150 ℃ of temperature (0 ,+10 ℃), 240h;
Experiment conclusion: no inefficacy product meets GB/T12750-II and JEDC standard.
The manufacture method embodiment 2 of photoelectric integrative infrared receiver:
In the present embodiment except that following process distinction in embodiment 1, all the other are identical with embodiment 1.
2.2.1 determine QMI505MT conductive adhesive preamplifier chip and the bonding PIN chip of 84-3 insulating cement;
4.3 molding technological condition:
Material cake warm-up time: 13 seconds;
Mold temperature: 145 ℃;
Injection moulding speed: 45 seconds;
Injection pressure: 5Mpa;
Clamping pressure: 16Mpa;
Curing time: 185 seconds;
6.1 the softening flash that goes:
With the flash on the softening liquid medicine SYD712 removal lead-in wire, softening time 50min;
The manufacture method embodiment 3 of photoelectric integrative infrared receiver:
In the present embodiment except that following process distinction in embodiment 1, all the other are identical with embodiment 1.
2.2.1 determine QMI505MT conductive adhesive preamplifier chip and the bonding PIN chip of insulating cement OT0149-1;
4.3 molding technological condition:
Material cake warm-up time: 13 seconds;
Mold temperature: 140 ℃;
Injection moulding speed: 30 seconds;
Injection pressure: 4.5Mpa;
Clamping pressure: 14.5Mpa;
Curing time: 180 seconds;
6.1 the softening flash that goes:
With the flash on the softening liquid medicine SYD712 removal lead-in wire, softening time 48min.
Claims (5)
1, a kind of photoelectric integrative infrared receiver, comprise the PIN optical detection chip and the preamplifier chip that are built in same housing, lead frame, it is characterized in that: PIN optical detection chip (2) is fixed in lead frame (4) by insulating cement (5), and preamplifier chip (3) is fixed in lead frame (4) by conducting resinl (6); Housing (1) is that hemisphere face housing (101) seamlessly transits the plastic packaging housing that is combined as a whole with cuboid housing (102), housing (1) is made by pure epoxy resin, the inside and outside smooth surface of hemisphere face housing (101) is seamless, its fineness is Ra 0.2～0.4, the inside and outside surface of rectangle housing (102) is the hair side of obfuscation, and its fineness is Ra 1.6～1.4; Radome (7) is encapsulated in the plastic-sealed body.
2, make the manufacture method of the described photoelectric integrative infrared receiver of claim 1, it is characterized in that according to the following steps:
Make that mould, die bonding, the pressure welding of twin-core sheet, the spherical plastic packaging moulding of pure epoxy resin, long lead are die-cut, plating, test, reliability test;
A. make mould
According to the photoelectric integrative infrared receiver outline drawing of design, plastic packaging product figure with cut muscle shaping figure mfg. moulding die;
B. die bonding
B.1PIN optical detection chip and preamplifier chip attenuate cutting: 4～6 inches disks are carried out attenuate by the specification and the standard of design, and then cut;
B.2 die bonding
B.2.1 determine conducting resinl and insulating cement; Utilize die Bonder with insulating cement with PIN optical detection die bonding on lead frame; With conducting resinl preamplifier chip is bonded on the lead frame, PIN optical detection chip and preamplifier chip are positioned at same plane;
B.2.2 core is the main technique condition of bonding PIN optical detection chip on the insulating cement: 0.12～0.13Mpa air pressure, and time of delay, 90～120ms vibrated 1 time, and last core process adopts exhausting system and logical nitrogen technology;
B.2.3 with the main technique condition of conducting resinl to the last core of preamplifier chip: 0.02～0.05Mpa air pressure, time of delay, 10～50ms closed vibration, guaranteed conducting resinl 100% spill-out, and last core process all adopts exhausting system and logical nitrogen technology;
B.2.4 determine conducting resinl and the curing process and the cure profile figure of insulating cement under same low-temperature setting condition:
Curing process: low-temperature setting, the stage heats up; It is in 50 ℃ the baking oven that the lead frame of bonding PIN optical detection chip and preamplifier chip is placed temperature, with 5 minutes oven temperature is evenly risen to 80 ℃ from 50 ℃, is incubated 30 minutes; With 20 minutes oven temperature is evenly risen to 150 ℃ from 80 ℃ again, be incubated 15 minutes; With 30 minutes oven temperature is evenly dropped to 50 ℃ from 150 ℃;
C. twin-core sheet pressure welding
PIN optical detection chip is connected with the preamplifier chip bonding wire; PIN optical detection chip is connected with the lead frame carrier bonding wire; Preamplifier chip is connected with the lead frame carrier bonding wire; Bonding wire is connected between the lead-in wire of preamplifier chip and lead frame; The wire welding area temperature is 200 ℃, and the preheating zone temperature is 190 ℃; Lead frame in the speed of service of workbench is: the each stepping of 6s/, PIN optical detection chip and preamplifier chip, each chip and lead frame carrier, lead welding are used
25 μ m spun golds;
D. the spherical plastic packaging moulding of pure epoxy resin
D.1 the plastic packaging material specification is determined: determine specification
The serial pure epoxy resin plastic packaging material of eastern NT300H of day of 48 * 56g * 2/ mould;
D.2 the plastic packaging material processing of rising again: with the spherical plastic packaging material of pure epoxy resin,, tie the sack protection against the tide immediately, when ambient humidity is higher than 50%RH, add drier in the packing case according to the common process processing of rising again;
D.3 molding technological condition
Material cake warm-up time: 10～15 seconds;
Mold temperature: 140 ℃～150 ℃;
Injection time: 25～45 seconds;
Injection pressure: 4～5MPa;
Clamping pressure: 11～16MPa;
The precuring time: 175～185 seconds;
D.4 clear mould: adopt the clear mould of moulding formula, cleaning material MCL-200C;
Mould adds vacuum extractor in the plastic packaging filling process, prevents to produce in the plastic-sealed body cavity;
E. die-cut
E.1 die-cut content
E.1.1 dash useless moulding: wash away the waste plastics between the waste plastics between the pin and two plastic-sealed bodies connect in the middle of the plastic-sealed body;
E.1.2 muscle hits: wash away the middle company's muscle of pin and pin;
E.1.3 cut off and separate: the company's muscle that cuts off pin end and lead frame frame;
E.2 clicking technique
E.2.1 liquidate and mould the punch grinding 0.18～0.25mm that steps down, making the useless residual 0.25mm of being retained in that moulds; Guarantee that colloid the crack do not occur at parting surface, and then guarantee that colloid is not damaged;
E.2.2 keep useless the moulding between muscle in two, the middle useless residual 0.4mm that is that moulds; Punch height reservation 0.4mm is moulded in dashing of middle muscle position;
E.2.3 cut muscle mould length direction both sides and add the pre-determined bit piece; Add the prelocalization baffle plate between the muscle in cutting muscle Mould Breadth degree direction front end, pin, the width of this prelocalization baffle plate is than the little 0.05mm of pin width spacing; And this prelocalization plate washer compresses lead frame in positive direction; Cutting muscle Mould Breadth degree direction rear end, with back location plate washer pin length is carried out spacing, proofread and correct simultaneously lead frame distortion, fall curvedly, product pin shearing length is consistent; The structure and the gap of adjustment, reconditioning knife edge die; The locating piece place steps down to adding; Fixed head is fixed the inlaid piece of mould position; Lower bolster is fixed fixed head;
F. electroplate
F.1 the softening flash that goes:
With the flash on the softening liquid medicine removal lead-in wire, softening time 45～55min;
F.2 lead-in wire is electroplated: select hanger for use, the automatic plating line of 2# has guaranteed the uniformity of long lead coating;
G. test
Carry out functional test by instructions for use, reject defective item;
H. reliability test
H.1 humiture storage test: 85 ℃ ± 2 ℃, 85%RH ± 5%RH, 240h;
H.2 temperature shock test::
240h;
H.3 high-temperature vapor is pressed test: 121 ℃ of temperature, 100%RH, air pressure 0.205Mpa, 168h;
H.4 high temperature storage test: 150 ℃ of temperature, error-0 ,+10 ℃, 240h;
Product must meet GB/T12750-II and JEDC standard.
3, the manufacture method of the described photoelectric integrative infrared receiver of making claim 1 according to claim 2 is characterized in that: described b.2.1 definite conducting resinl and insulating cement are 8360 conducting resinls and OT0149-1 insulating cement;
Described d.3 molding technological condition is:
Material cake warm-up time: 15 seconds;
Mold temperature: 150 ℃;
Injection time: 25 seconds;
Injection pressure: 4MPa;
Clamping pressure: 11MPa;
The precuring time: 175 seconds;
Described f.1 softening removes flash: described softening liquid medicine is SYD711, described softening time 45min.
4, the manufacture method of the described photoelectric integrative infrared receiver of making claim 1 according to claim 2 is characterized in that: described b.2.1 definite conducting resinl and insulating cement are QMI505MT conducting resinl and 84-3 insulating cement;
Described d.3 molding technological condition is:
Material cake warm-up time: 13 seconds;
Mold temperature: 145 ℃;
Injection moulding speed: 45 seconds;
Injection pressure: 5MPa;
Clamping pressure: 16MPa;
Curing time: 185 seconds;
Described f.1 softening removes flash: described softening liquid medicine is SYD712, described softening time 50min.
5, the manufacture method of the described photoelectric integrative infrared receiver of making claim 1 according to claim 2 is characterized in that: described b.2.1 definite conducting resinl and insulating cement are QMI505MT conducting resinl and OT0149-1 insulating cement;
Described d.3 molding technological condition:
Material cake warm-up time: 13 seconds;
Mold temperature: 140 ℃;
Injection moulding speed: 30 seconds;
Injection pressure: 4.5MPa;
Clamping pressure: 14.5MPa;
Curing time: 180 seconds;
The described f.1 softening flash that goes: described softening liquid medicine SYD712 removes the flash on the lead-in wire, described softening time 48min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100428674A CN100448005C (en) | 2005-06-21 | 2005-06-21 | Photoelectric integrative infrared receiver and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100428674A CN100448005C (en) | 2005-06-21 | 2005-06-21 | Photoelectric integrative infrared receiver and packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1885537A CN1885537A (en) | 2006-12-27 |
| CN100448005C true CN100448005C (en) | 2008-12-31 |
Family
ID=37583609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100428674A Expired - Fee Related CN100448005C (en) | 2005-06-21 | 2005-06-21 | Photoelectric integrative infrared receiver and packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100448005C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546713B (en) * | 2009-04-30 | 2010-12-01 | 强茂电子(无锡)有限公司 | Manufacture method of plastic-packaged inline power rectifier |
| CN101859760A (en) * | 2010-04-26 | 2010-10-13 | 陈智军 | Packaging structure of surface-mount device infrared receiver |
| CN102181280A (en) * | 2010-12-31 | 2011-09-14 | 东莞市银河光电有限公司 | Preparation method of biscuits for producing white light SMD LED (Surface Mount Device Light Emitting Diode) |
| CN102185646B (en) * | 2011-05-26 | 2014-09-10 | 泉芯电子技术(深圳)有限公司 | Infrared receiver |
| CN102290411A (en) * | 2011-07-16 | 2011-12-21 | 珠海市万州光电科技有限公司 | Light interference resistant infrared receiving module and manufacture method thereof |
| CN102339808B (en) * | 2011-10-28 | 2013-07-17 | 无锡红光微电子有限公司 | Packaging lead frame structure |
| CN102903712A (en) * | 2012-10-26 | 2013-01-30 | 慧创就光电有限公司 | Input and output type photoelectric device |
| CN105827308A (en) * | 2016-06-03 | 2016-08-03 | 深圳市鸿利泰光电科技有限公司 | Emission and receiving integrated infrared module |
| CN108573966A (en) * | 2018-07-03 | 2018-09-25 | 江苏欧密格光电科技股份有限公司 | A kind of patch infrared receiving terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0873554A (en) * | 1994-09-06 | 1996-03-19 | Sumitomo Bayer Urethane Kk | Polyol composition for rigid polyurethane foam and its use |
| JP2000204138A (en) * | 1999-01-12 | 2000-07-25 | Toshiba Chem Corp | Sealing resin composition and sealed semiconductor device |
| CN2391281Y (en) * | 1998-08-07 | 2000-08-09 | 厦门华联电子有限公司 | Supporting and enclosing structure for infrared remote control receiving amplifier |
| US20020096764A1 (en) * | 2000-10-13 | 2002-07-25 | Min-Lung Huang | Semiconductor device having bump electrode |
-
2005
- 2005-06-21 CN CNB2005100428674A patent/CN100448005C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0873554A (en) * | 1994-09-06 | 1996-03-19 | Sumitomo Bayer Urethane Kk | Polyol composition for rigid polyurethane foam and its use |
| CN2391281Y (en) * | 1998-08-07 | 2000-08-09 | 厦门华联电子有限公司 | Supporting and enclosing structure for infrared remote control receiving amplifier |
| JP2000204138A (en) * | 1999-01-12 | 2000-07-25 | Toshiba Chem Corp | Sealing resin composition and sealed semiconductor device |
| US20020096764A1 (en) * | 2000-10-13 | 2002-07-25 | Min-Lung Huang | Semiconductor device having bump electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1885537A (en) | 2006-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100448005C (en) | Photoelectric integrative infrared receiver and packaging method | |
| CN103903991A (en) | Method for packaging photoelectric sensor chip | |
| CN102074534B (en) | Micro PCB radio frequency module and packaging method thereof | |
| CN106876543A (en) | A kind of QFN surface mounts RGB LED packages and its manufacture method | |
| CN101567351A (en) | Miniature radio frequency module and packaging method thereof | |
| CN101551871A (en) | Novel mobile phone card and implementation method thereof | |
| WO2016107298A1 (en) | Molding packaged mini mobile phone intelligent card, and packing method | |
| CN101447036B (en) | Micro-module for noncontact intelligent electronic label and carrier band thereof | |
| CN101593746B (en) | Chip packaging structure | |
| CN106935520A (en) | A kind of interior insulation encapsulating structure and its manufacturing process | |
| CN103715112B (en) | A kind of production method of smart SIM card module | |
| CN109599346B (en) | Intelligent power module machining process and power module | |
| CN207852652U (en) | A kind of patch-type IRM high shielding constructions | |
| CN202111082U (en) | Multi-loop arrangement integrated circuit (IC) chip package element | |
| CN106601714A (en) | Insulation package structure in movable ejector pin and process method thereof | |
| CN209626212U (en) | A kind of WLP device | |
| CN202678409U (en) | LED lamp bead packaging structure | |
| CN202025735U (en) | Novel lead framework structure | |
| CN107402424B (en) | The SiP encapsulating structure and its process of vertical-type optoelectronic transceiver functions | |
| CN210692537U (en) | Pit type lead frame infrared receiver | |
| CN202178252U (en) | Multi-loop arranged carrier-free double-IC chip packaging part | |
| CN204696627U (en) | A kind of plastic TO46 base | |
| CN221150031U (en) | Integrated infrared receiving head | |
| CN100365814C (en) | Back-to-back packaging integrated circuit and its producing method | |
| CN204045558U (en) | Array of semiconductor devices formula reviewing packaging mechanism |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081231 Termination date: 20160621 |