CN102903712A - Input and output type photoelectric device - Google Patents
Input and output type photoelectric device Download PDFInfo
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- CN102903712A CN102903712A CN2012104152818A CN201210415281A CN102903712A CN 102903712 A CN102903712 A CN 102903712A CN 2012104152818 A CN2012104152818 A CN 2012104152818A CN 201210415281 A CN201210415281 A CN 201210415281A CN 102903712 A CN102903712 A CN 102903712A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses an input and output type photoelectric device which is characterized by comprising at least one photoelectric element wafer, at least one integrated circuit wafer, an insulation light-penetrating epoxy resin housing and a lead frame, wherein the photoelectric element wafer and the integrated circuit wafer are mutually coupled with the lead frame in an operation and electric connection manner, and are fully packaged in the insulation light-penetrating epoxy resin housing, the lead frame is packaged in the insulation light-penetrating epoxy resin housing, and a dual-adhering agent is adopted. According to the invention, the integrated circuit wafer and the photoelectric element wafer are combined, thus the defect of large configuration of the conventional structure, and the manufacture cost and the material cost are lowered.
Description
Technical field
The present invention relates to a kind of input and output formula electrooptical device.
Background technology
The basic structure of light-emitting diode comprises an above element, such as luminescent wafer, can send visible light (as red, orange, Huang, green, indigo plant, purple, be entire spectrum visible light and combination thereof, and/or the emission invisible light, such as infrared ray or ultraviolet ray), also comprise structural housing, and bonding agent (such as glue) and conduction coupling line (such as gold, aluminium, copper, silver, or certain other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more luminescent wafers can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different illumination outward appearance and spotlight effect.
Fig. 1 has provided the structure of the known light-emitting diode 50 in a kind of prior art field.Light emitting diode construction 50 has represented the basic structure of a light-emitting diode, and this light emitting diode construction comprises 1,1 lead frame 2 of 1 LED wafer, bonding agent 3 and 1 conduction coupling line 4.Lead frame 2 upper outside coating adhesives 3.By bonding agent 3 that one or more LED wafer 1 are bonding, conduction coupling line 4 is connected to lead frame 2, so that electric current to be provided.Epoxy resin 5 is encapsulated in lead frame 2 in the circuit.
The basic structure of photodiode comprises an above element, such as photo diode wafer, can receive visible light (as red, orange, Huang, green, indigo plant, purple, be entire spectrum visible light and combination thereof and/or reception invisible light, such as infrared ray or ultraviolet ray), be electric energy with transform light energy, comprise structural housing, and bonding agent (such as glue) and conduction coupling line (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more photo diode wafer can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different light-receiving effects.Photoelectric diode structure is similar to light-emitting diode shown in Figure 1, and only LED wafer 1 is substituted by photo diode wafer 1.
The basic structure of phototransistor comprises an above element, such as the phototransistor wafer, can receive visible light (as red, orange, Huang is green, indigo plant, purple, i.e. entire spectrum visible light and combination thereof and/or reception invisible light, such as infrared ray or ultraviolet ray), be electric energy with transform light energy, and amplified, comprise structural housing, and bonding agent (such as glue) and conduction coupling line (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more phototransistor wafers can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different light-receiving effects.The photoelectric crystal tubular construction is similar to light emitting diode construction shown in Figure 1, and only LED wafer 1 is substituted by phototransistor wafer 1.
The basic structure of optical sensor comprises an above element, such as the light sensing chip, can receive visible light (as red, orange, Huang, green, indigo plant, purple, i.e. entire spectrum visible light and combination thereof and/or reception invisible light are such as infrared ray or ultraviolet ray), be electric energy with transform light energy, and amplified, be converted into data output and/or linear analogue output, comprise structural housing, and bonding agent (such as glue) and conduction coupling line (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more light sensing chips can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different light-receiving effects.The optical sensor structure is similar to light emitting diode construction shown in Figure 1, and only LED wafer 1 is substituted by light sensing chip 1.
The basic structure of reflective sensor comprises an above element, such as a pair of LED wafer, can launch visible light (as red, orange, Huang, green, indigo plant, purple, be entire spectrum visible light and combination thereof and/or emission invisible light, such as infrared ray or ultraviolet ray), and photo diode wafer or a phototransistor wafer or a light sensing chip, can receive visible light (as red, orange, Huang, green, indigo plant, purple, be entire spectrum visible light and combination thereof and/or reception invisible light, such as infrared ray or ultraviolet ray), also comprise structural housing, bonding agent (such as glue) and conduction coupling line are (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more LED wafer, photo diode wafer or phototransistor wafer or light sensing chip can stick together, and are coupled by conductor wire.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different light emission and light-receiving effect.
Fig. 2 has provided the structure of the known reflective sensor 60 in a kind of prior art field.Reflective sensor 60 has represented a reflective sensor basic structure, and this reflective sensor comprises 12,1 lead frames 13 of 11,1 photo diode wafer of 1 LED wafer, bonding agent 14 and conduction coupling line 15.Lead frame 13 upper outside coating adhesives 14.By bonding agent 14 that one or more LED wafer 11 and photo diode wafer 12 are bonding, conduction coupling line 15 is connected to lead frame 13, so that electric current to be provided.Epoxy resin 16 is encapsulated in lead frame 13 in the circuit.
The basic structure of Photo Interrupter comprises a LED wafer, photo diode wafer or phototransistor wafer or light sensing chip, and place the plastic casing of these two kinds of elements.Fig. 3 has provided the structure of the known Photo Interrupter 70 in a kind of prior art field.Photo Interrupter 70 has represented a Photo Interrupter basic structure, and this structure comprises 21, one phototransistors 22 of a light-emitting diode, and a plastic casing 23.
The basic structure of receiver module comprises a photo diode wafer, can receive visible light (as red, orange, Huang is green, indigo plant, purple, i.e. entire spectrum visible light and combination thereof and/or reception invisible light, such as infrared ray or ultraviolet ray), one is amplified the demodulator wafer, can amplify with rectification from the photo-signal of photo diode wafer and output rectification signal, a structural housing, and bonding agent (such as glue) and conduction coupling line (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, one or more photo diode wafer and amplification demodulator wafer can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resinoid encapsulation, and presents different encapsulation shapes, to obtain different light-receiving effects.Fig. 4 has provided the known receiver module structure 80 in a kind of prior art field.Receiver module structure 80 has represented a receiver module basic structure, and this receiver module comprises 31,1 amplification conciliation device wafers processed of 1 photo diode wafer 32,1 lead frames 33, bonding agent 34 and conduction coupling line 35.Lead frame 33 upper outside coating adhesives 34.By bonding agent 34 that one or more wafers 31 and wafer 32 are bonding, conduction coupling line 35 is connected to lead frame 33, so that electric current to be provided.Epoxy resin 36 is encapsulated in lead frame 33 in the circuit.
Light-emitting diode above-mentioned, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter and receiver module generally all divide photoelectric cell into.
Integrated circuit can receive signal, and these signals can be trigger-types, ON/OFF, or code signal, this integrated circuit receives from switch, photodiode, phototransistor, optical sensor, reflective sensor, the signal of Photo Interrupter or receiver module, and output signal is to drive light-emitting diode, loud speaker, electric motor or other electron component.
Integrated circuit with shell has several traditional structures.Chip on board is a kind of this class formation wherein, and its basic structure can comprise an integrated circuit (IC) wafer, a printed circuit board, bonding agent (such as glue), and conduction coupling line (such as gold, aluminium, copper, silver, or other alloy).Bonding agent available silver epoxy resin or silicone epoxy resin, at least one integrated circuit (IC) wafer sticks together, and by the coupling of conduction coupling line.Epoxy resin can form certain resin-encapsulated.
Fig. 5 has provided the structure of the known chip on board 90 in a kind of prior art field.Chip on board 90 has represented the basic structure of a chip on board, and this structure comprises 1 integrated circuit (IC) wafer, 41,1 printed circuit board 42, bonding agent 43 and conduction coupling line 44.Printed circuit board (PCB) 42 upper outside coating adhesives 43.By bonding agent 43 that at least one integrated circuit (IC) wafer 41 is bonding, conduction coupling line 44 is connected to printed circuit board (PCB) 42, so that electric current to be provided.Epoxy resin 45 is encapsulated in integrated circuit (IC) wafer 41 on the printed circuit board (PCB) 42.
The integrated circuit that has encapsulated on printed circuit board (PCB) is that this type of is with another example of shell mechanism, its basic structure can comprise an integrated circuit (IC) wafer, a structural housing, bonding agent (such as glue), and the conduction coupling line (such as gold, aluminium, copper, silver, or other alloy), a printed circuit board and tin.Bonding agent available silver epoxy resin or silicone epoxy resin, at least one integrated circuit (IC) wafer can stick together, and by the coupling of conduction coupling line.Epoxy resin can form certain resin-encapsulated.The integrated circuit that has encapsulated can be with tin welding on printed circuit board (PCB).
Fig. 6 has provided the structure of the known integrated circuit that has encapsulated 100 in a kind of prior art field on printed circuit board (PCB).The basic structure that has represented an integrated circuit that has encapsulated on printed circuit board (PCB) at the integrated circuit 100 that has encapsulated on the printed circuit board (PCB), this structure comprises 1 integrated circuit (IC) wafer 51, lead frame 52, bonding agent 53 and conduction coupling line 54, tin 55 and a printed circuit board 56.Lead frame 52 upper outside coating adhesives 53.With bonding agent 53 that at least one integrated circuit (IC) wafer 51 is bonding, conduction coupling line 54 is connected to lead frame 52, so that electric current to be provided.Epoxy resin 57 is used for lead frame 52 is encapsulated in the circuit.Finally, with tin lead frame 52 is welded on the printed circuit board (PCB) 56.
Fig. 7 has provided a kind of prior art field known chip on board integrated circuit, light-emitting diode and loadspeaker structure 110.Chip on board 90 and a switch 61, loud speaker 62, battery 63 is connected with light-emitting diode 50.Chip on board 90 receives the signal that switch 61 sends, and then exports the signal of a programming mode, drives light-emitting diode 50, and output signal drives the sound that loud speaker 62 broadcasts have been programmed.
Fig. 8 has provided the known chip on board integrated circuit in a kind of prior art field, the structure of receiver module and loud speaker 120.In this structure, chip on board 90 and 80,1 loud speakers 62 of 1 receiver module are connected with battery 63.Chip on board 90 receives the signal that receiver module 80 sends, and then output signal drives loud speaker 62 and plays the sound of having programmed.
Although above-mentioned conventional structure shortcoming is to realize required function, dispose too huge, cause its make and material cost higher.
Therefore, be necessary to adopt Reduced Design to overcome the shortcoming that above-mentioned huge configuration brings, only need to use some common handy materials, this design just can be carried out simple copy, makes and material cost thereby reduce.
Summary of the invention
The object of the invention is to address the aforementioned drawbacks, and by integrated circuit (IC) is combined with the photoelectric cell wafer, overcomes the too huge shortcoming of above-mentioned configuration, reduces and makes and material cost.
Realize that technical scheme of the present invention is as described below:
A kind of input and output formula electrooptical device, it is characterized in that, comprise at least one photoelectric cell wafer, at least one integrated circuit (IC) wafer, an insulation light-permeable epoxy package and a lead frame, described photoelectric cell wafer and described integrated circuit (IC) wafer are by operation and electricity connects mode and described lead frame intercouples, and described photoelectric cell wafer and described integrated circuit (IC) wafer all are packaged in the described insulation light-permeable epoxy package, and described lead frame partly is packaged in the described insulation light-permeable epoxy package.
The present invention according to said structure is characterized in that, described photoelectric cell wafer is light-emitting diode, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter, in the receiver module any one.
The present invention according to said structure is characterized in that, described photoelectric cell wafer is one or more light-emitting diodes, and photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter, in the receiver module any one.The present invention according to said structure is characterized in that, can comprise that is also amplified a demodulator wafer.
The present invention according to said structure is characterized in that, described lead frame is coupled by operation and at least one ancillary equipment.
The present invention according to said structure is characterized in that, at least a described ancillary equipment is power supply.
The present invention according to said structure is characterized in that, at least a described ancillary equipment is switch.
The present invention according to said structure is characterized in that, at least a described ancillary equipment is loud speaker.
The present invention according to said structure, it is characterized in that, also comprise two bonding agents, described pair of bonding agent comprises bonding conducting resinl, bonding insulating cement, described bonding conducting resinl and described bonding insulating cement, by operational coupled together, and mutually bonding, and described bonding conducting resinl and described integrated circuit (IC) wafer bonding.
Beneficial effect of the present invention is as follows: the present invention is by combining integrated circuit with the photoelectric cell wafer, and the photoelectric cell wafer that adopts comprises light-emitting diode, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter and receiver module are wherein at least a, can realize multi-functional, because integrated circuit links to each other in encapsulation inside with the photoelectric cell wafer, solved the huge configuration of printed circuit board (PCB) of the encapsulation and integration circuit of traditional integrated circuit, and then reduced and make and material cost.And the present invention also can adopt two bonding agents, so that lead frame can be connected to Vcc (positive source terminal) or power cathode terminal, thereby is applicable to all Circnit Layouts.
Description of drawings
Fig. 1 is the known light emitting diode construction schematic diagram in a kind of prior art field.
Fig. 2 is the known reflective sensor structural representation in a kind of prior art field.
Fig. 3 is the known Photo Interrupter structural representation in a kind of prior art field.
Fig. 4 is the known receiver module structural representation in a kind of prior art field.
Fig. 5 is the known chip on board structural representation in a kind of prior art field.
Fig. 6 is the known integrated circuit structure schematic diagram that has encapsulated on printed circuit board (PCB) in a kind of prior art field.
Fig. 7 is a kind of prior art field known chip on board integrated circuit, light-emitting diode and loadspeaker structure schematic diagram.
Fig. 8 is a kind of prior art field known chip on board integrated circuit, receiver module and loadspeaker structure schematic diagram.
Fig. 9 is the input and output formula light emitting diode construction schematic diagram of first embodiment of the invention.
Figure 10 is the multi-functional composite LED structural representation of first embodiment of the invention.
Figure 11 is the input and output formula light emitting diode construction schematic diagram of second embodiment of the invention.
Figure 12 is the multi-functional composite LED structural representation of second embodiment of the invention.
Figure 13 is the amplification rectification input and output formula receiver module structural representation of third embodiment of the invention.
Figure 14 is the multi-functional composite receiver modular structure schematic diagram of third embodiment of the invention.
Figure 15 is the structural representation after the input and output formula light-emitting diode of first embodiment of the invention improves.
Figure 16 is the multi-functional composite LED structural representation after the input and output formula light-emitting diode of first embodiment of the invention improves.
Figure 17 is the multi-function led structural representation that the present invention has adopted two bonding agents.
In the drawings, 1, LED wafer; 2, lead frame; 3, bonding agent; 4, conduction coupling line; 5, epoxy resin; 11, LED wafer; 12, photo diode wafer; 13, lead frame; 14, bonding agent; 15, conduction coupling line; 16, epoxy resin; 21, light-emitting diode; 22, phototransistor; 23, plastic casing; 31, photo diode wafer; 32, amplify conciliation device wafer processed; 33, lead frame; 34, bonding agent; 35, conduction coupling line; 36, epoxy resin; 41, integrated circuit (IC) wafer; 42, printed circuit board (PCB); 43, bonding agent; 44, conduction coupling line; 45, epoxy resin; 50, light-emitting diode; 51, integrated circuit (IC) wafer; 52, lead frame; 53, bonding agent; 54, conduction coupling line; 55, tin; 56, printed circuit board (PCB); 57, epoxy resin; 60, reflective sensor; 61, switch; 62, loud speaker; 63, battery; 70, Photo Interrupter, 80, receiver module; 90, chip on board; 100, the integrated circuit structure that on printed circuit board (PCB), has encapsulated; 110, chip on board integrated circuit, light-emitting diode and loadspeaker structure; 120, chip on board integrated circuit, receiver module and loadspeaker structure; 200, input and output formula light-emitting diode; 201, integrated circuit (IC) wafer; 202, LED wafer; 203, lead frame; 204, bonding agent; 205, conduction coupling line; 206, epoxy resin; 207, switch; 208, loud speaker; 209, battery; 250, input and output formula light-emitting diode; 280, input and output formula light-emitting diode; 290, input and output formula light-emitting diode; 300, input and output formula receiver module; 301, integrated circuit (IC) wafer; 302, photo diode wafer; 303, amplify the demodulator wafer; 304, lead frame; 305, bonding agent; 306, conduction coupling line; 307, epoxy resin; 308, battery; 309, loud speaker; 2031, pin; 2032, pin; 2033, pin; 2034, pin; 2035, pin; 2041, bonding insulating cement; 2042, bonding conducting resinl; 2043, bonding conducting resinl.
Embodiment
Below in conjunction with accompanying drawing and execution mode the present invention is conducted further description:
The first embodiment:
As shown in Figure 9, be a kind of input and output formula light-emitting diode 200 structural representations, this structure comprises 202, one lead frames 203 of 201, one LED wafer of an integrated circuit (IC) wafer, bonding agent 204 and conduction coupling line 205.Described lead frame 203 is upper outside to be coated with described bonding agent 204.With described bonding agent 204 that described integrated circuit (IC) wafer 201 and described LED wafer 202 is bonding, described conduction coupling line 205 is connected to described lead frame 203, so that electric current to be provided.Described integrated circuit (IC) wafer 201, and described LED wafer 202 just can be combined.
A kind of epoxy resin 206 forms insulation light-permeable epoxy package, is used for described lead frame 203 is encapsulated in the circuit.At least one pin 2031 is used for being connected with the input port of described integrated circuit (IC) wafer 201, in order to receive input signal, such as trigger-type, ON/OFF and code signal.And this pin can be the pin of pin package, or the connection gasket of surface mount device package.Additional pin 2034 is used for the output port of described integrated circuit (IC) wafer 201 is connected with outer member, to drive ancillary equipment, comprises loud speaker, electric motor etc.In addition, described integrated circuit (IC) wafer 201 is built in the described input and output formula light-emitting diode 200.Because do not adopt the encapsulation of traditional integrated circuit (IC) wafer and the printed circuit board (PCB) of placement integrated circuit, manufacturing and material cost significantly reduce.
As shown in figure 10, be a multi-functional composite LED structural representation that input and output formula light-emitting diode 200 as shown in Figure 9 forms, this structure can by operation and circuit connecting method, be coupled to switch 207, loud speaker 208 and battery 209.
The second embodiment:
When demand motive peripheral functionalities not, then described input and output formula light-emitting diode 200 also can further be simplified.
As shown in figure 11, be another kind of input and output formula light-emitting diode 250 structural representations, this structure comprises 202, one lead frames 203 of 201, one LED wafer of an integrated circuit (IC) wafer, bonding agent 204 and conduction coupling line 205.Described lead frame 203 is upper outside to be coated with described bonding agent 204.By described binding agent 204 a described integrated circuit (IC) wafer 201 and described LED wafer 202 are given bondingly, described conduction coupling line 205 is connected to described lead frame 203 by mode of operation, so that electric current to be provided.Described integrated circuit (IC) wafer 201, and described LED wafer 202 just can be combined.
A kind of epoxy resin 206 forms insulation light-permeable epoxy package, is used for described lead frame 203 is encapsulated in the circuit.Be different from above-mentioned light-emitting diode assembly 200, this structure has adopted the additional pin of at least one pin package, or the connection gasket of surface mount device (SMD) encapsulation, the input port of described integrated circuit (IC) wafer 201 is linked to each other with package outside, to transmit input signal, these signals comprise trigger-type, ON/OFF and code signal.Be connected to the additional pin of the pin package of described integrated circuit (IC) wafer input port, or the connection gasket of surface mount device (SMD) encapsulation has one at least.
As shown in figure 12, be a multi-functional composite LED structural representation that input and output formula light-emitting diode 250 as shown in figure 11 forms, this structure comprises input and output formula light-emitting diode 250, switch 207 and a battery 209.Because do not adopt the encapsulation of traditional integrated circuit (IC) wafer and the printed circuit board (PCB) of placement integrated circuit, manufacturing and material cost significantly reduce.
The 3rd embodiment:
As shown in figure 13, be input and output formula receiver module structural representation, this structure comprises 302, one amplifications of 301, one photo diode wafer of integrated circuit (IC) wafer demodulator wafer 303, one lead frames 304, bonding agent 305 and coupling line 306.Described lead frame 304 is upper outside to be coated with described bonding agent 305.By described bonding agent 305 with a described photo diode wafer 302, bonding with the described integrated circuit (IC) wafer of a described amplification demodulator wafer 303 and 301, by operation and circuit connecting mode, described conduction coupling line 306 is coupled with described lead frame 304, so that electric current to be provided.Described photo diode wafer 302, described amplification demodulator wafer 303, described integrated circuit (IC) wafer 301 just can be combined.
A kind of epoxy resin 307 forms insulation light-permeable epoxy package, is used for described lead frame 304 is encapsulated in the circuit.This structure is that output port with described amplification demodulator wafer 303 directly links to each other with the input port of described integrated circuit (IC) wafer 301, and be used for the output port of described integrated circuit (IC) wafer 301 is linked to each other with lead frame 304, to drive ancillary equipment, comprise loud speaker, electric motor etc.
As shown in figure 14, be a multi-functional composite receiver modular structure schematic diagram that input and output formula receiver module 300 as shown in figure 13 forms, this structure can be coupled by operation and battery 308 and a loud speaker 309.Because do not adopt the encapsulation of traditional integrated circuit (IC) wafer and the printed circuit board (PCB) of placement integrated circuit, manufacturing and material cost significantly reduce.
The improvement project of the first embodiment:
Export (DPO) or pulse width modulation (PWM) when the drive pattern of integrated circuit for quarter-phase, when being coupled to ancillary equipment, the input and output formula light-emitting diode 200 among the first embodiment can further improve.Figure 15 is the structure of the input and output formula light-emitting diode 280 after expression improves, this structure has two additional pin 2034 and 2035 that are used for pin package, the output port of integrated circuit (IC) wafer is connected with ancillary equipment, loud speaker for example, this port driver pattern is quarter-phase output (DPO) or pulse width modulation (PWM), and extra pin at least one.As shown in figure 16, be the structural representation of the multi-functional composite LED of input and output light-emitting diode 280 compositions as shown in figure 15, this structure can be by circuit operation and a switch, and battery and a loud speaker are coupled.
For some integrated circuit, its substrate need be connected to power cathode or insulation isolation, also need be connected to power cathode or insulation isolation so be connected to the lead frame of ic substrate.But for some application circuit configuration design, the lead frame that is connected to ic substrate need be connected to positive source, so just need come ic substrate and lead frame insulation isolation as bonding agent by insulating cement.
But the size of some integrated circuit is larger, if use insulating cement, in the bonding process, integrated circuit can't firmly be fixed on the lead frame, and like this, the position of integrated circuit may be departed from.If the use conducting resinl, although can the position of integrated circuit is firmly fixing, lead frame need to be connected to the negative pole of power supply, will cause like this some Circnit Layout to use.
For this situation, the present invention has adopted two bonding agents, comprises bonding conducting resinl, and bonding insulating cement.At first, bonding insulating cement is coated on the lead frame, secondly, hyperthermia drying.Again, bonding conducting resinl is coated in bonding insulating cement surface.At last, integrated circuit and bonding conducting resinl surface is bonding.Bonding insulating cement can be isolated with integrated circuit and lead frame, and like this, lead frame can be connected to the positive terminal of power supply, thereby be applicable to all Circnit Layouts.And bonding conducting resinl firmly is fixed on assigned address with integrated circuit.
As shown in figure 17, for having comprised the multi-function led structural representation of two bonding agents.This structure adopts two bonding agents to form by input and output formula light-emitting diode 290, comprises 201, one LED wafer 202 of an integrated circuit (IC) wafer, a lead frame comprises pin 2031-2035, bonding insulating cement 2041, bonding conducting resinl 2042 and 2043, and conduction coupling line 205.Described lead frame is coated with described bonding insulating cement 2041 outside the 2032 upper surface parts.Described bonding insulating cement 2041 is at high temperature dried.Then, described bonding insulating cement 2041 surfaces are outer to be coated with described bonding conducting resinl 2042, and what adopt among the figure is silver epoxy.The local outer described bonding conducting resinl 2043 that is coated with on the described lead frame 2032.By described bonding conducting resinl 2042 a described integrated circuit (IC) wafer 201 is given bondingly, and the following of described bonding conducting resinl 2042 is described bonding insulating cement 2041.Described LED wafer 202 is bonding with described bonding conducting resinl 2043, is fixed on the described lead frame 2032, and described conduction coupling line 205 is connected with described lead frame 2031-2035 by operation, so that electric current to be provided.Adopt epoxy resin 206 to form insulation light-permeable epoxy package among the figure, lead frame 2031-2035 is encapsulated in this circuit.
The present invention is applicable to various photoelectric cell wafers, comprises light-emitting diode, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter and receiver module.The photoelectric cell wafer can be the traditional pin package with at least three feets, or has surface mount device (SMD) encapsulation of at least three connection gaskets.
The present invention is by combining integrated circuit with the photoelectric cell wafer, and the photoelectric cell wafer that adopts comprises light-emitting diode, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter and receiver module are wherein at least a, can realize multi-functional.Because integrated circuit links to each other with the photoelectric cell wafer package is inner, solved the encapsulation of traditional integrated circuit and the huge configuration of placing the printed circuit board (PCB) of integrated circuit, and then reduced and make and material cost.And the present invention also can adopt two bonding agents, so that lead frame can be connected to the negative or positive electrode terminal of power supply, thereby is applicable to all Circnit Layouts.
The description of the above embodiment of the present invention comprises the content of describing in the summary, and not exclusive example or limit the invention in the precise forms disclosed herein.Specific embodiment described herein illustrates with only being used for for example, and according to the understanding of being familiar with the correlative technology field personnel and understanding, can meet all kinds of equivalence improvement of spirit and scope of the invention.As pointed, this type of improvement can be made according to the foregoing description of the embodiment of the invention, and will comprise within the spirit and scope of the present invention.
Claims (9)
1. input and output formula electrooptical device, it is characterized in that, comprise at least one photoelectric cell wafer, at least one integrated circuit (IC) wafer, an insulation light-permeable epoxy package and a lead frame, described photoelectric cell wafer and described integrated circuit (IC) wafer are by operation and electricity connects mode and described lead frame intercouples, and described photoelectric cell wafer and described integrated circuit (IC) wafer all are packaged in the described insulation light-permeable epoxy package, and described lead frame partly is packaged in the described insulation light-permeable epoxy package.
2. a kind of input and output formula electrooptical device according to claim 1 is characterized in that described photoelectric cell wafer is light-emitting diode, photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter, in the receiver module any one.
3. a kind of input and output formula electrooptical device according to claim 1 is characterized in that described photoelectric cell wafer is one or more light-emitting diodes, and photodiode, phototransistor, optical sensor, reflective sensor, Photo Interrupter, in the receiver module any one.
4. a kind of input and output formula electrooptical device according to claim 1 is characterized in that, comprises that is also amplified a demodulator wafer.
5. a kind of input and output formula electrooptical device according to claim 1 is characterized in that, described lead frame is coupled by operation and at least one ancillary equipment.
6. a kind of input and output formula electrooptical device according to claim 5 is characterized in that at least a described ancillary equipment is power supply.
7. a kind of input and output formula electrooptical device according to claim 5 is characterized in that at least a described ancillary equipment is switch.
8. a kind of input and output formula electrooptical device according to claim 5 is characterized in that at least a described ancillary equipment is loud speaker.
9. a kind of input and output formula electrooptical device according to claim 1, it is characterized in that, also comprise two bonding agents, described pair of bonding agent comprises bonding conducting resinl, bonding insulating cement, described bonding conducting resinl and described bonding insulating cement, by operational coupled together, and mutually bonding, and described bonding conducting resinl and described integrated circuit (IC) wafer bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104152818A CN102903712A (en) | 2012-10-26 | 2012-10-26 | Input and output type photoelectric device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104152818A CN102903712A (en) | 2012-10-26 | 2012-10-26 | Input and output type photoelectric device |
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| Publication Number | Publication Date |
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| CN102903712A true CN102903712A (en) | 2013-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104152818A Pending CN102903712A (en) | 2012-10-26 | 2012-10-26 | Input and output type photoelectric device |
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| CN (1) | CN102903712A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601728A (en) * | 2003-09-01 | 2005-03-30 | 夏普株式会社 | Semiconductor device |
| CN1885537A (en) * | 2005-06-21 | 2006-12-27 | 天水华天科技股份有限公司 | Photoelectric integrative infrared receiver and packaging method |
| US20080123328A1 (en) * | 2006-11-29 | 2008-05-29 | Higher Way Electronic Co., Ltd. | Solar-powered illuminator |
| US20110297831A1 (en) * | 2010-06-08 | 2011-12-08 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Small Low-Profile Optical Proximity Sensor |
| CN102693974A (en) * | 2012-06-14 | 2012-09-26 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
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2012
- 2012-10-26 CN CN2012104152818A patent/CN102903712A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601728A (en) * | 2003-09-01 | 2005-03-30 | 夏普株式会社 | Semiconductor device |
| CN1885537A (en) * | 2005-06-21 | 2006-12-27 | 天水华天科技股份有限公司 | Photoelectric integrative infrared receiver and packaging method |
| US20080123328A1 (en) * | 2006-11-29 | 2008-05-29 | Higher Way Electronic Co., Ltd. | Solar-powered illuminator |
| US20110297831A1 (en) * | 2010-06-08 | 2011-12-08 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Small Low-Profile Optical Proximity Sensor |
| CN102693974A (en) * | 2012-06-14 | 2012-09-26 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
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Application publication date: 20130130 |