CN102693974A - Infrared remote control receiving amplifier with double-layer structure - Google Patents
Infrared remote control receiving amplifier with double-layer structure Download PDFInfo
- Publication number
- CN102693974A CN102693974A CN2012101958396A CN201210195839A CN102693974A CN 102693974 A CN102693974 A CN 102693974A CN 2012101958396 A CN2012101958396 A CN 2012101958396A CN 201210195839 A CN201210195839 A CN 201210195839A CN 102693974 A CN102693974 A CN 102693974A
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- Prior art keywords
- chip
- lead frame
- analog
- remote control
- infrared remote
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to the technical field of integrated circuits and photoelectric type combination in electronic components and particularly relates to an infrared remote control receiving amplifier with a double-layer structure. The infrared remote control receiving amplifier with the double-layer structure comprises a photosensitive chip, an analog IC (integrated circuit) chip and a packaging body, wherein the amplifier further comprises a lower lead framework and an upper lead framework, the analog IC chip is fixed at the lower lead framework, the photosensitive chip is fixed at the upper lead framework, and the photosensitive chip is electrically connected with the analog IC chip; the upper and the lower lead frameworks are used for performing electromagnetic shielding on the analog IC chip; and the packaging body covers the photosensitive chip, the analog IC chip and the upper and the lower lead frameworks. The infrared remote control receiving amplifier with the double-layer structure, disclosed by the invention, has the advantages of good shielding effect and greatly extended receiving distance, increased anti-interference property; moreover, the size of the infrared remote control receiving amplifier with the double-layer structure can be reduced, which is in line with the small-sized trend of electronic components.
Description
Technical field
The present invention relates to the technical field that integrated circuit and photoelectricity class in the electronic devices and components combine, particularly relate to a kind of double-deck infrared remote control receiving amplifier that has.
Background technology
Infrared Ray Remote Control Technology is a kind of technology of utilizing infrared ray to carry out point-to-point communication, and infrared ray is occuping outside the visible light on the frequency spectrum, so strong interference immunity has the straightline propagation characteristic of light wave, be difficult for producing mutual interference, and be good information transmission media.It is noiseless to adopt Infrared Ray Remote Control Technology to have a signal, and transmission accuracy is high, and volume is little, power is low, and characteristics with low cost are widely used in each electronic applications for this reason, especially uses quite universal at field of household appliances such as colour TV, DVD, air-conditioning etc.Along with the fast development of electronics integrated technology and the trend toward miniaturization of electronic devices and components, require the overall dimension of dwindling infrared remote control receiving amplifier.But; Use the infrared remote control receiving amplifier of traditional handicraft processing; Because analog IC chip and photosensor chip are shelved on same lead frame; Product length is that the length sum of two kinds of chips is added the minimum separation distances between the two, so for the external dimensions that reduces infrared remote control receiving amplifier its limitation is arranged.
Moreover, because the poor anti jamming capability of analog IC chip, and because the fast development of technology such as broadcasting, TV, microwave, communication and universal, significantly improving of radio-frequency apparatus power makes to be covered with various electromagnetic interference in the space; This makes the stability of infrared remote control receiving amplifier work and reliability reduce greatly, and therefore existing infrared remote control receiving amplifier need shield the analog IC chip aspect the anti-electromagnetic interference.Yet the analog IC chip and the photosensor chip of existing infrared remote control receiving amplifier product are all shelved and bonding on the same plane of lead frame, and photosensor chip need receive infrared signal, and the analog IC chip need block shielding.Infrared remote control receiving amplifier for the discrete inner shield structure that extensively adopts at present; Need to turn up the formation fulcrum in the lead frame side earlier, and then cover a screening cover, the analog IC chip also has 4 faces to shield at most like this; Top and bottom also are to leave a blank; And in order to make photosensor chip normally receive infrared signal, the screening cover of infrared remote control receiving amplifier need be opened an optical transmission window, so can't accomplish the analog IC chip is carried out good shielding fully.
Summary of the invention
To the deficiency of prior art, the invention provides a kind of double-deck infrared remote control receiving amplifier that has, existing shield effectiveness preferably; Make the receiving range of product prolong greatly; Anti-interference increases, and it is very little that the while volume can be done, and meets the trend of electronic devices and components miniaturization.
For achieving the above object; The present invention realizes through following technical scheme: have double-deck infrared remote control receiving amplifier; Comprise a photosensor chip, an analog IC chip and a packaging body, this infrared remote control receiving amplifier also comprises lead frame and last lead frame down, and described analog IC chip is fixed in said lead frame down; Said photosensor chip is fixed in the said lead frame of going up, and is electrically connected between said photosensor chip and the analog IC chip; Said lead frame down carries out electromagnetic shielding to the lower surface of analog IC chip, and said upward lead frame carries out electromagnetic shielding to upper surface and four side surfaces of analog IC chip; Said packaging body coats is in photosensor chip, analog IC chip, lead frame and last lead frame down, and is filled in the space between photosensor chip, analog IC chip, time lead frame and the last lead frame.
Further, the output of said photosensor chip is connected with last lead frame, and the input of said analog IC chip is connected with following lead frame, and described lead frame down is connected with last lead frame.
Further, described down lead frame and last lead frame are connected through welding or riveted or elargol and fix.
Further, described packaging body is that epoxy resin is recorded encapsulation or the injection moulding encapsulation forms.
During making; The analog IC chip is fixed on the following lead frame, photosensor chip is fixed on the lead frame, and realizes the output of photosensor chip and being electrically connected of last lead frame respectively; The input of analog IC chip is electrically connected with following lead frame; Up and down lead frame connects through welding or riveted or elargol mode and fixes then, realizes the electrical connection between the lead frame up and down, thereby realizes the electrical connection between photosensor chip and the analog IC chip; Last lead frame wherein forms upper surface and four side surfaces that a screening cover covers in the analog IC chip; This radome links to each other with following lead frame and forms the electromagnetic shielding space of a sealing; The analog IC chip places in this electromagnetic shielding space, makes six surfaces of analog IC chip all realize electromagnetic shielding with the outside; Carry out epoxy encapsulation at last; Make packaging body coats in photosensor chip, analog IC chip, following lead frame and last lead frame; And be filled in the space between photosensor chip, analog IC chip, following lead frame and the last lead frame, thereby formed an infrared remote control receiving amplifier that profile is small and exquisite, shield effectiveness is good.
During use, utilize photosensor chip can realize reception, and utilize the lock shield space of lead frame formation up and down can realize shielding electromagnetic interference signal to infrared signal.
The invention has the beneficial effects as follows:
(1) the present invention separates photosensor chip and analog IC chip and is assemblied in up and down on two layers of lead frame; Make the length of lead frame dwindle greatly; The size that only need be designed to be a bit larger tham photosensor chip gets final product, and it is very little that the entire product volume also can be done, and meets the trend of electronic devices and components miniaturization;
(2) in the sealing electromagnetic shielding space that lead frame and last lead frame constituted under the analog IC chip was fixed in the present invention; Realize six surfaces of analog IC chip and outside electromagnetic shielding through this sealing electromagnetic shielding space; Promoted shield effectiveness greatly; Make the receiving range of product prolong greatly, improved the anti-interference of product.
Description of drawings
Fig. 1 is that analog IC chip of the present invention is fixed in the structural representation of lead frame down.
Fig. 2 is fixed in the structural representation of lead frame for photosensor chip of the present invention.
Fig. 3 is the structural representation in the front of lead frame up and down of the present invention connection.
Fig. 4 is the structural representation at the back side of lead frame up and down of the present invention connection.
Fig. 5 is a product design section of structure of the present invention.
Fig. 6 is a product design structural representation of the present invention.
Embodiment
Combine accompanying drawing and embodiment that the present invention is further specified at present.
Referring to figs. 1 to shown in Figure 6; Has double-deck infrared remote control receiving amplifier; Comprise an analog IC chip 11, a photosensor chip 21 and a packaging body 3; This amplifier also comprises lead frame 1 and last lead frame 2 down, and described analog IC chip 11 is fixed in said lead frame 1 down, and said photosensor chip 21 is fixed in the said lead frame 2 of going up; The output of said photosensor chip 21 is connected with last lead frame 2; The input of said analog IC chip 11 is connected with following lead frame 1, and described down lead frame 1 and last lead frame 2 are connected through welding or riveted or elargol and fix, and realize the electrical connection between said photosensor chip 21 and the analog IC chip 11; The said lower surface of 1 pair of analog IC chip 11 of lead frame down carries out electromagnetic shielding, and said upper surface and four side surfaces of going up 2 pairs of analog IC chips 11 of lead frame carry out electromagnetic shielding; Said epoxy resin is recorded packaging body 3 that encapsulation or injection moulding encapsulation form and is coated on photosensor chip 21, analog IC chip 11, lead frame 1 and last lead frame 2 down, and is filled in the space between photosensor chip 21, analog IC chip 11, time lead frame 1 and the last lead frame 2.
During making; Analog IC chip 11 is fixed on the following lead frame 1; Photosensor chip 21 is fixed on the lead frame 2; And realize the output of photosensor chip 21 and being electrically connected of last lead frame 2 respectively, analog IC chip 11 is electrically connected with following lead frame 1, will go up lead frame 2 and following lead frame 1 then and be connected through welding or riveted or elargol mode and fix; Electrical connection in the realization between lead frame 2 and the following lead frame 1; Thereby realize the electrical connection between photosensor chip 21 and the analog IC chip 11, last lead frame 2 wherein forms upper surface and four side surfaces that a screening cover covers in analog IC chip 11, and this radome links to each other with following lead frame 1 and forms the electromagnetic shielding space of a sealing; Analog IC chip 21 places in this electromagnetic shielding space; Make 21 6 surfaces of analog IC chip all realize electromagnetic shielding, carry out epoxy resin at last and record encapsulation or injection moulding encapsulation, make packaging body 3 be coated on photosensor chip 21, analog IC chip 11, following lead frame 1 and last lead frame 2 with the outside; And be filled in the space between photosensor chip 21, analog IC chip 11, following lead frame 1 and the last lead frame 2, thereby formed an infrared remote control receiving amplifier that profile is small and exquisite, shield effectiveness is good.
During use, utilize photosensor chip 21 can realize reception, and lead frame 1 can be realized the shielding to electromagnetic interference signal with the lock shield space that last lead frame 2 forms under utilizing to infrared signal.
The present invention separates photosensor chip and analog IC chip and is assemblied in up and down on two layers of lead frame; Make the length of lead frame dwindle greatly; The size that only need be designed to be a bit larger tham photosensor chip gets final product, and it is very little that the entire product volume also can be done, and meets the trend of electronic devices and components miniaturization.
In the electromagnetic shielding space of the sealing that lead frame and last lead frame constituted under the analog IC chip was fixed in the present invention; Realize six surfaces and the outside electromagnetic shielding of analog IC chip through the electromagnetic shielding space of this sealing; Promoted shield effectiveness greatly; Make the receiving range of product prolong greatly, improved the anti-interference of product.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; But the those skilled in the art should be understood that; In the spirit and scope of the present invention that do not break away from appended claims and limited; Can make various variations to the present invention in form with on the details, be protection scope of the present invention.
Claims (4)
1. has double-deck infrared remote control receiving amplifier; Comprise a photosensor chip, an analog IC chip and a packaging body; It is characterized in that this infrared remote control receiving amplifier also comprises lead frame and last lead frame down, described analog IC chip is fixed in said lead frame down; Said photosensor chip is fixed in the said lead frame of going up, and is electrically connected between said photosensor chip and the analog IC chip; Said lead frame down carries out electromagnetic shielding to the lower surface of analog IC chip, and said upward lead frame carries out electromagnetic shielding to upper surface and four side surfaces of analog IC chip; Said packaging body coats is in photosensor chip, analog IC chip, lead frame and last lead frame down, and is filled in the space between photosensor chip, analog IC chip, time lead frame and the last lead frame.
2. according to claim 1 have a double-deck infrared remote control receiving amplifier; It is characterized in that; The output of said photosensor chip is connected with last lead frame; The input of said analog IC chip is connected with following lead frame, and described lead frame down is connected with last lead frame.
3. according to claim 2 have a double-deck infrared remote control receiving amplifier, it is characterized in that, described lead frame down and last lead frame are connected through welding or riveted or elargol and fix.
4. according to claim 1 have a double-deck infrared remote control receiving amplifier, it is characterized in that, described packaging body is that epoxy resin is recorded encapsulation or the injection moulding encapsulation forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210195839.6A CN102693974B (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210195839.6A CN102693974B (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102693974A true CN102693974A (en) | 2012-09-26 |
| CN102693974B CN102693974B (en) | 2014-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210195839.6A Active CN102693974B (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903712A (en) * | 2012-10-26 | 2013-01-30 | 慧创就光电有限公司 | Input and output type photoelectric device |
| CN110896069A (en) * | 2018-09-12 | 2020-03-20 | 罗伊电子株式会社 | Method for manufacturing optical sensor module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273356A (en) * | 1994-03-29 | 1995-10-20 | New Japan Radio Co Ltd | Remote-control unit for receiving infrared ray |
| CN1622327A (en) * | 2003-11-27 | 2005-06-01 | 夏普株式会社 | Optical semiconductor element and electronic device using the optical semiconductor element |
| CN202749373U (en) * | 2012-06-14 | 2013-02-20 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
-
2012
- 2012-06-14 CN CN201210195839.6A patent/CN102693974B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273356A (en) * | 1994-03-29 | 1995-10-20 | New Japan Radio Co Ltd | Remote-control unit for receiving infrared ray |
| CN1622327A (en) * | 2003-11-27 | 2005-06-01 | 夏普株式会社 | Optical semiconductor element and electronic device using the optical semiconductor element |
| CN202749373U (en) * | 2012-06-14 | 2013-02-20 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903712A (en) * | 2012-10-26 | 2013-01-30 | 慧创就光电有限公司 | Input and output type photoelectric device |
| CN110896069A (en) * | 2018-09-12 | 2020-03-20 | 罗伊电子株式会社 | Method for manufacturing optical sensor module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102693974B (en) | 2014-10-15 |
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Address after: 361000 Fujian Province, Xiamen torch hi tech Industrial Development Zone Hualian electronic building Patentee after: Xiamen Hualian electronic Limited by Share Ltd Address before: 361000 Fujian Province, Xiamen torch hi tech Industrial Development Zone Hualian electronic building Patentee before: Xiamen Hualian Electronics Co., Ltd. |