CN202749369U - Infrared remote control amplifier - Google Patents
Infrared remote control amplifier Download PDFInfo
- Publication number
- CN202749369U CN202749369U CN 201220305238 CN201220305238U CN202749369U CN 202749369 U CN202749369 U CN 202749369U CN 201220305238 CN201220305238 CN 201220305238 CN 201220305238 U CN201220305238 U CN 201220305238U CN 202749369 U CN202749369 U CN 202749369U
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- China
- Prior art keywords
- remote control
- infrared remote
- control amplifier
- chip
- lead frame
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Abstract
The utility model relates to an electronic component, specifically relating to an electromagnetic shielding infrared remote control amplifier encapsulation structure. The infrared remote control amplifier comprises a lead wire framework, a photoelectric chip, an analog IC chip, a primary encapsulation housing and a secondary encapsulation housing, wherein the photoelectric chip and the analog IC chip are encapsulated by the primary encapsulation housing after being fixed on the lead wire framework; a metal material coating is coated on the other areas besides a light transmission window area corresponding to the photoelectric chip and the other areas outside the perimeter area of the non ground wire pin of the lead wire framework on the primary encapsulation housing; and the secondary encapsulation housing is encapsulated outside the primary encapsulation housing. The infrared remote control amplifier is a modified encapsulation structure of an infrared remote control amplifier and can improve the anti-electromagnetic interference capability.
Description
Technical field
The utility model relates to electronic devices and components, specifically has the infrared remote control amplifier package of electromagnetic shielding.
Background technology
Infrared remote control receiving amplifier (being commonly called as in the industry " infrared remote control Receiver ") is a kind of electronic devices and components that are widely used in the electronic circuit.It is a kind of integrated encapsulation components and parts, mainly is made of lead frame, encapsulating housing, photoelectric chip and analog IC chip, is used for receiving infrared remote-controlled signal and amplifies output.
In order to guarantee infrared remote control receiving amplifier in the stability of using, all can adopt certain measure to carry out electromagnetic shielding aspect the antagonism electromagnetic interference.The electromagnetic armouring structure of existing infrared remote control receiving amplifier is modal to be the shell that adopts iron material to make, and the analog IC chip is shielded.The weak point of external shield product mainly is that overcoat shell production process is many, and efficient is low, and need to be weldingly connected with lead frame ground end.Shell is subject to the impact of extraneous weather conditions simultaneously, easily oxidation and rusting.
In addition, be exactly to adopt the inner shield mode in addition, inner shield divides integrated inner shield and discrete inner shield.Consult shown in Fig. 1 a and Fig. 1 b, integrated inner shield is by the part of lead frame self being turned up the formation screen, can only have upper and lower surfaces to shield, and around the analog IC chip all leave a blank in the side, not shielding; Simultaneously material is identical with the used material of lead frame, can only iron and copper two class materials, and the choice is less.Consult shown in Fig. 2 a, Fig. 2 b and Fig. 2 c, the comparison of discrete inner shielding structure is complicated, turns up the formation fulcrum in lead frame 2 sides first exactly, and then covers a screening cover, also have at most 4 faces to shield so simultaneously, top and bottom also are to leave a blank.If the material lead frame material of shell is different simultaneously, and the minimum 0.2mm of outer casing thickness, corresponding thermal coefficient of expansion is different, and the stress of generation can have influence on the reliability of product.
Or on the basis of inner shield mode, increase again external shield, the shield effectiveness of this shielding mode is better than independent inner shield or external shield, but structure is also complicated, and cost also further promotes, and equally has the weak point of above-mentioned 2 kinds of shielding modes simultaneously.
The utility model content
The purpose of this utility model is to improve the anti-electromagnetic interference capability of infrared remote control amplifier product.By secondary encapsulation, increase a metallic shield body at interiors of products, strengthen product to the shield effectiveness of electromagnetic interference signal, enlarged the product range of application, overcome the weak point of existing shielding mode.
The technical solution of the utility model is:
A kind of infrared remote control amplifier, comprise lead frame, photoelectric chip, analog IC chip, encapsulating housing and secondary encapsulation housing, photoelectric chip and analog IC chip are encapsulated by an encapsulating housing after being fixed in lead frame, and other zones outside encapsulating housing is removed the neighboring area of non-ground wire pin of optical transmission window zone corresponding to photoelectric chip and lead frame plate layer of metal material coating, then with the secondary encapsulation packaging shell outside encapsulating housing.
Further, the lead frame in the described encapsulating housing is provided with inner shielding structure.
Further, described inner shielding structure is integrated inner shielding structure or discrete inner shielding structure.
The utility model adopts technical scheme as above; by plating layer of metal material coating on the encapsulating housing; contact by the ground wire pin of this metal material coating with infrared remote control amplifier lead frame; and form a more airtight metallic shield body, then carry out the packaging protection second time.The difference of the utility model and existing product is:
1, shield relative closure can accomplish the fully shielding of 5 faces, and the metallic shield cavity is not subjected to extraneous climatic effect;
2, the metal material of metallic shield body flexible choice according to actual needs;
3, the metallic shield body thickness is thin, and thickness reaches micron level, and corresponding thermal expansion influence is little.
Description of drawings
Fig. 1 a is the schematic perspective view of the lead frame of integrated inner shield;
Fig. 1 b is the side schematic view of the lead frame of integrated inner shield;
Fig. 2 a is the schematic perspective view of the lead frame of discrete inner shield;
Fig. 2 b is the schematic perspective view after the lead frame of discrete inner shield is installed screening cover;
Fig. 2 c is the side schematic view of the lead frame of discrete inner shield;
Fig. 3 is the structural representation that photoelectric chip, analog IC chip are fixed in lead frame;
Fig. 4 is behind encapsulating housing of lead-frame packages and plates the structural representation of layer of metal material coating;
Fig. 5 is the structural representation behind the encapsulation secondary encapsulation housing on encapsulating housing;
Fig. 6 is the cutaway view of the infrared remote control amplifier of embodiment.
Embodiment
Now with embodiment the utility model is further specified by reference to the accompanying drawings.
Embodiment 1:
Consulting shown in Figure 3ly, is the photoelectric chip of the infrared remote control amplifier of an embodiment, the structural representation that the analog IC chip is fixed in lead frame.Hereinafter describe with a SMD infrared remote control amplifier example structure, the structure of the infrared remote control amplifier of plug-in type is similar with it.Be fixed with photoelectric chip 2 and analog IC chip 3 on the main part of lead frame 1,3 and 2 pins are drawn respectively in the top and bottom of lead frame 1, wherein 2 pin ones 4,15 of the pin one 1 of lower end and upper end all are the main parts that are connected to lead frame, consist of ground wire pin GND, and the lower end other 2 independently non-ly wire pin 12,13 be respectively high level pin VCC and output pin OUT, and electrically be connected to the corresponding port of photoelectric chip 2 and analog IC chip 3 by going between.
Consulting shown in Figure 4ly, is at encapsulating housing 4 of the basis of the lead frame of Fig. 1 encapsulation.One time encapsulating housing 4 can adopt the epoxy resin material of conventional printing opacity to encapsulate.And remove the optical transmission window zone 41 of photoelectric chip 2 correspondences and the pin 12(high level pin VCC of lead frame 1 on encapsulating housing 4), pin 13(output pin OUT) the neighboring area outside other zones plate layer of metal material coating.The optical transmission window zone 41 of the photoelectric chip 2 correspondences not purpose of plating material coating is in order to allow infrared light can be projected to photoelectric chip 2.Zone except the non-ground wire pin on the lead frame 1 on encapsulating housing 4 all plates layer of metal material coating, is in order to consist of omnibearing metallic shield structure.Except lower 3 pin ones 1 of lead frame 1 lower end, 12,13 face plating material coating not, other 5 faces all are coated with metal material coating in the present embodiment, and such metallic shield body relative closure can be accomplished the fully shielding of 5 faces.And, since the pin one 4, the 15th of lead frame 1 upper end, the ground wire pin, and the one side of lead frame upper end is coated with metal material coating, will consist of with ground wire to contact, thereby realize good effectiveness.Certainly because the leftmost pin one 1 in lead frame 1 lower end also is ground wire pin GND, also can this pin one 1 around but avoid pin one 2,13 zone also plates metal material coating, then shield effectiveness slightly promotes.But trouble just relatively in production operation need to shelter from first and surround pin one 2,13 zone, shifts out shelter after then having plated metal material coating again, not as only 5 faces except lead frame 1 lower surface are carried out coating and come simply among the embodiment.
Wherein, the method that plates metal material coating on encapsulating housing can be to utilize the method for plastic electroplating or nano mirror spray coating, can be plated in various metal materials such as comprising copper, silver, zinc on the outer surface of an encapsulating housing.
Consult Fig. 5 and shown in Figure 6, finish above-mentioned structure after, again secondary encapsulation housing 5 is packaged in outside encapsulating housing 4, form the product structure of final infrared remote control amplifier.Secondary encapsulation housing 5 also can be to adopt the epoxy resin material of conventional printing opacity to encapsulate.
Embodiment 2:
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (4)
1. infrared remote control amplifier, comprise lead frame, photoelectric chip, analog IC chip, encapsulating housing and secondary encapsulation housing, photoelectric chip and analog IC chip are encapsulated by an encapsulating housing after being fixed in lead frame, and other zones outside encapsulating housing is removed the neighboring area of non-ground wire pin of optical transmission window zone corresponding to photoelectric chip and lead frame plate layer of metal material coating, then with the secondary encapsulation packaging shell outside encapsulating housing.
2. infrared remote control amplifier according to claim 1 is characterized in that: the lead frame in the described encapsulating housing is provided with inner shielding structure.
3. infrared remote control amplifier according to claim 2, it is characterized in that: described inner shielding structure is integrated inner shielding structure.
4. infrared remote control amplifier according to claim 2, it is characterized in that: described inner shielding structure is discrete inner shielding structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220305238 CN202749369U (en) | 2012-06-28 | 2012-06-28 | Infrared remote control amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220305238 CN202749369U (en) | 2012-06-28 | 2012-06-28 | Infrared remote control amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202749369U true CN202749369U (en) | 2013-02-20 |
Family
ID=47708728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220305238 Expired - Fee Related CN202749369U (en) | 2012-06-28 | 2012-06-28 | Infrared remote control amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202749369U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102711429A (en) * | 2012-06-28 | 2012-10-03 | 厦门华联电子有限公司 | Infrared remote control amplifier and method for realizing electromagnetic shielding by using same |
| CN107845612A (en) * | 2017-11-28 | 2018-03-27 | 无锡豪帮高科股份有限公司 | A kind of secondary encapsulation integrates the structure and its method of photoelectric coupled circuit |
-
2012
- 2012-06-28 CN CN 201220305238 patent/CN202749369U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102711429A (en) * | 2012-06-28 | 2012-10-03 | 厦门华联电子有限公司 | Infrared remote control amplifier and method for realizing electromagnetic shielding by using same |
| CN107845612A (en) * | 2017-11-28 | 2018-03-27 | 无锡豪帮高科股份有限公司 | A kind of secondary encapsulation integrates the structure and its method of photoelectric coupled circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130220 Termination date: 20160628 |