CN202749373U - Infrared remote control receiving amplifier with double-layer structure - Google Patents
Infrared remote control receiving amplifier with double-layer structure Download PDFInfo
- Publication number
- CN202749373U CN202749373U CN2012202800239U CN201220280023U CN202749373U CN 202749373 U CN202749373 U CN 202749373U CN 2012202800239 U CN2012202800239 U CN 2012202800239U CN 201220280023 U CN201220280023 U CN 201220280023U CN 202749373 U CN202749373 U CN 202749373U
- Authority
- CN
- China
- Prior art keywords
- lead frame
- chip
- analog
- remote control
- infrared remote
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The utility model relates to the technical field of an integrated circuit and photoelectric-type combination in electronic components, especially relates to an infrared remote control receiving amplifier with a double-layer structure. The infrared remote control receiving amplifier with the double-layer structure comprises a photosensitive chip, an analog IC chip, an encapsulation body, an upper wire-lead frame and a lower wire-lead frame, wherein the analog IC chip is fixed on the lower wire-lead frame, the photosensitive chip is fixed on the upper wire-lead frame, the photosensitive chip is electrically connected with the analog IC chip, the upper wire-lead frame and the lower wire-lead frame perform electromagnetic shielding on the analog IC chip, the encapsulation body is wrapped on the photosensitive chip, the analog IC chip, the upper wire-lead frame and the lower wire-lead frame. The infrared remote control receiving amplifier with the double-layer structure of the utility model is advantageous in better shielding effect, greatly prolonged receiving distance of a product, strengthened interference resistance, extremely small dimension and consistency with the miniaturization trend of the electronic components.
Description
Technical field
The utility model relates to integrated circuit in the electronic devices and components and the technical field of photoelectricity class combination, particularly relates to a kind of double-deck infrared remote control receiving amplifier that has.
Background technology
Infrared Ray Remote Control Technology is a kind of technology of utilizing infrared ray to carry out point-to-point communication, and infrared ray occupy outside the visible light at frequency spectrum, so strong interference immunity has the straightline propagation characteristic of light wave, be difficult for producing mutual interference, and be good information transmission media.It is noiseless to adopt Infrared Ray Remote Control Technology to have a signal, and transmission accuracy is high, and volume is little, power is low, and characteristics with low cost are widely used in each electronic applications for this reason, especially uses quite universal at field of household appliances such as colour TV, DVD, air-conditioning etc.Along with the fast development of electronics integrated technology and the trend toward miniaturization of electronic devices and components, require the overall dimension of dwindling infrared remote control receiving amplifier.But, use the infrared remote control receiving amplifier of traditional handicraft processing, because analog IC chip and photosensor chip are shelved on same lead frame, product length is that the length sum of two kinds of chips is added the minimum separation distances between the two, so for the external dimensions that reduces infrared remote control receiving amplifier its limitation is arranged.
Moreover, because the poor anti jamming capability of analog IC chip, and because the fast development of the technology such as broadcasting, TV, microwave, communication and universal, significantly improving of radio-frequency apparatus power makes to be covered with various electromagnetic interference in the space; This is so that the stability of infrared remote control receiving amplifier work and reliability reduce, and therefore existing infrared remote control receiving amplifier need to shield the analog IC chip aspect the anti-electromagnetic interference.Yet analog IC chip and the photosensor chip of existing infrared remote control receiving amplifier product are all shelved and bonding at the same plane of lead frame, and photosensor chip need to receive infrared signal, and the analog IC chip needs to block shielding.Infrared remote control receiving amplifier for the discrete inner shielding structure that extensively adopts at present, need to turn up the formation fulcrum in the lead frame side first, and then cover a screening cover, the analog IC chip also has at most 4 faces to shield like this, top and bottom also are to leave a blank, and for so that photosensor chip normally receives infrared signal, the screening cover of infrared remote control receiving amplifier need to be opened an optical transmission window, so can't accomplish the analog IC chip is carried out good fully shielding.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of double-deck infrared remote control receiving amplifier that has, existing preferably shield effectiveness, so that the receiving range of product prolongs greatly, anti-interference increases, what volume can be done simultaneously is very little, meets the trend of electronic devices and components miniaturization.
For achieving the above object, the utility model is achieved through the following technical solutions: have double-deck infrared remote control receiving amplifier, comprise a photosensor chip, an analog IC chip and a packaging body, this infrared remote control receiving amplifier also comprises lower lead frame and upper lead frame, described analog IC chip is fixed in described lower lead frame, described photosensor chip is fixed in described upper lead frame, is electrically connected between described photosensor chip and the analog IC chip; Described lower lead frame carries out electromagnetic shielding to the lower surface of analog IC chip, and described upper lead frame carries out electromagnetic shielding to upper surface and four side surfaces of analog IC chip; Described packaging body coats is in photosensor chip, analog IC chip, lower lead frame and upper lead frame, and is filled in the space between photosensor chip, analog IC chip, lower lead frame and the upper lead frame.
Further, the output of described photosensor chip is connected with upper lead frame, and the input of described analog IC chip is connected with lower lead frame, and described lower lead frame is connected with upper lead frame.
Further, described lower lead frame and upper lead frame are connected by welding or riveted or elargol and fix.
Further, described packaging body is that epoxy resin is recorded encapsulation or injection molding packaging forms.
During making, the analog IC chip is fixed on the lower lead frame, photosensor chip is fixed on the upper lead frame, and realize respectively the output of photosensor chip and being electrically connected of upper lead frame, the input of analog IC chip is electrically connected with lower lead frame, then up and down lead frame connects by welding or riveted or elargol mode and fixes, and realizes the up and down electrical connection between the lead frame, thereby realizes the electrical connection between photosensor chip and the analog IC chip; Upper lead frame wherein forms upper surface and four side surfaces that a screening cover covers in the analog IC chip, this radome links to each other with lower lead frame and forms the electromagnetic shielding space of a sealing, the analog IC chip places in this electromagnetic shielding space, so that electromagnetic shielding is all realized with the outside in six surfaces of analog IC chip; Carry out at last epoxy encapsulation, make packaging body coats in photosensor chip, analog IC chip, lower lead frame and upper lead frame, and be filled in space between photosensor chip, analog IC chip, lower lead frame and the upper lead frame, thereby formed an infrared remote control receiving amplifier that profile is small and exquisite, shield effectiveness is good.
During use, utilize photosensor chip can realize reception to infrared signal, and the shielding to electromagnetic interference signal can be realized in the lock shield space that utilizes lead frame up and down to form.
The beneficial effects of the utility model are:
(1) the utility model separates photosensor chip and analog IC chip and is assemblied in up and down on two layers of lead frame, so that the length of lead frame is dwindled greatly, the size that only need be designed to be a bit larger tham photosensor chip gets final product, it is very little that whole small product size also can be done, and meets the trend of electronic devices and components miniaturization;
(2) the utility model is fixed in the analog IC chip in the sealing electromagnetic shielding space of lower lead frame and upper lead frame formation, realize the electromagnetic shielding of six surfaces of analog IC chip and outside by this sealing electromagnetic shielding space, greatly promoted shield effectiveness, so that the receiving range of product prolongs greatly, improved the anti-interference of product.
Description of drawings
Fig. 1 is the structural representation that analog IC chip of the present utility model is fixed in lower lead frame.
Fig. 2 is the structural representation that photosensor chip of the present utility model is fixed in lead frame.
Fig. 3 is the structural representation in the front of up and down lead frame of the present utility model connection.
Fig. 4 is the structural representation at the back side of up and down lead frame of the present utility model connection.
Fig. 5 is product design section of structure of the present utility model.
Fig. 6 is product design structural representation of the present utility model.
Embodiment
Now with embodiment the utility model is further specified by reference to the accompanying drawings.
Referring to figs. 1 to shown in Figure 6, has double-deck infrared remote control receiving amplifier, comprise an analog IC chip 11, one photosensor chip 21 and a packaging body 3, this amplifier also comprises lower lead frame 1 and upper lead frame 2, described analog IC chip 11 is fixed in described lower lead frame 1, described photosensor chip 21 is fixed in described upper lead frame 2, the output of described photosensor chip 21 is connected with upper lead frame 2, the input of described analog IC chip 11 is connected with lower lead frame 1, described lower lead frame 1 and upper lead frame 2 are connected by welding or riveted or elargol and fix, and realize the electrical connection between described photosensor chip 21 and the analog IC chip 11; The lower surface of 1 pair of analog IC chip 11 of described lower lead frame carries out electromagnetic shielding, and upper surface and four side surfaces of 2 pairs of analog IC chips 11 of described upper lead frame carry out electromagnetic shielding; Described epoxy resin records encapsulation or the packaging body 3 that forms of injection molding packaging is coated on photosensor chip 21, analog IC chip 11, lower lead frame 1 and upper lead frame 2, and be filled in the space between photosensor chip 21, analog IC chip 11, lower lead frame 1 and the upper lead frame 2.
During making, analog IC chip 11 is fixed on the lower lead frame 1, photosensor chip 21 is fixed on the upper lead frame 2, and realize respectively the output of photosensor chip 21 and being electrically connected of upper lead frame 2, analog IC chip 11 is electrically connected with lower lead frame 1, then upper lead frame 2 and lower lead frame 1 are connected by welding or riveted or elargol mode and fix, electrical connection in the realization between lead frame 2 and the lower lead frame 1, thereby realize the electrical connection between photosensor chip 21 and the analog IC chip 11, upper lead frame 2 wherein forms upper surface and four side surfaces that a screening cover covers in analog IC chip 11, this radome links to each other with lower lead frame 1 and forms the electromagnetic shielding space of a sealing, analog IC chip 21 places in this electromagnetic shielding space, so that electromagnetic shielding is all realized with the outside in 21 6 surfaces of analog IC chip, carry out at last epoxy resin and record encapsulation or injection molding packaging, make packaging body 3 be coated on photosensor chip 21, analog IC chip 11, lower lead frame 1 and upper lead frame 2, and be filled in photosensor chip 21, analog IC chip 11, space between lower lead frame 1 and the upper lead frame 2, thus it is small and exquisite to have formed a profile, the infrared remote control receiving amplifier that shield effectiveness is good.
During use, utilize photosensor chip 21 can realize reception to infrared signal, and the shielding to electromagnetic interference signal can be realized in the lock shield space that utilizes lower lead frame 1 and upper lead frame 2 to form.
The utility model separates photosensor chip and analog IC chip and is assemblied in up and down on two layers of lead frame, so that the length of lead frame is dwindled greatly, the size that only need be designed to be a bit larger tham photosensor chip gets final product, and it is very little that whole small product size also can be done, and meets the trend of electronic devices and components miniaturization.
The utility model is fixed in the analog IC chip in the electromagnetic shielding space of the sealing that lower lead frame and upper lead frame consist of, six surfaces of analog IC chip and outside electromagnetic shielding are realized in electromagnetic shielding space by this sealing, greatly promoted shield effectiveness, so that the receiving range of product prolongs greatly, improved the anti-interference of product.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (4)
1. has double-deck infrared remote control receiving amplifier, comprise a photosensor chip, an analog IC chip and a packaging body, it is characterized in that, this infrared remote control receiving amplifier also comprises lower lead frame and upper lead frame, described analog IC chip is fixed in described lower lead frame, described photosensor chip is fixed in described upper lead frame, is electrically connected between described photosensor chip and the analog IC chip; Described lower lead frame carries out electromagnetic shielding to the lower surface of analog IC chip, and described upper lead frame carries out electromagnetic shielding to upper surface and four side surfaces of analog IC chip; Described packaging body coats is in photosensor chip, analog IC chip, lower lead frame and upper lead frame, and is filled in the space between photosensor chip, analog IC chip, lower lead frame and the upper lead frame.
2. according to claim 1 have a double-deck infrared remote control receiving amplifier, it is characterized in that, the output of described photosensor chip is connected with upper lead frame, the input of described analog IC chip is connected with lower lead frame, and described lower lead frame is connected with upper lead frame.
3. according to claim 2 have a double-deck infrared remote control receiving amplifier, it is characterized in that, described lower lead frame and upper lead frame are connected by welding or riveted or elargol and fix.
4. according to claim 1 have a double-deck infrared remote control receiving amplifier, it is characterized in that, described packaging body is that epoxy resin is recorded encapsulation or injection molding packaging forms.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012202800239U CN202749373U (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012202800239U CN202749373U (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202749373U true CN202749373U (en) | 2013-02-20 |
Family
ID=47708732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012202800239U Withdrawn - After Issue CN202749373U (en) | 2012-06-14 | 2012-06-14 | Infrared remote control receiving amplifier with double-layer structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202749373U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693974A (en) * | 2012-06-14 | 2012-09-26 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
-
2012
- 2012-06-14 CN CN2012202800239U patent/CN202749373U/en not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693974A (en) * | 2012-06-14 | 2012-09-26 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
CN102693974B (en) * | 2012-06-14 | 2014-10-15 | 厦门华联电子有限公司 | Infrared remote control receiving amplifier with double-layer structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100213563A1 (en) | Semiconductor optoelectronic device and quad flat non-leaded optoelectronic device | |
CN207282490U (en) | A kind of quantum chip denoising device | |
CN104701273A (en) | Chip packaging structure with electromagnetic shielding function | |
CN204290902U (en) | Integral filter | |
WO2021258426A1 (en) | Capacitance detection apparatus and electronic device | |
CN102693974B (en) | Infrared remote control receiving amplifier with double-layer structure | |
CN202749373U (en) | Infrared remote control receiving amplifier with double-layer structure | |
CN110783318B (en) | Sensor packaging structure and electronic equipment | |
CN204928573U (en) | Anti -electromagnetic interference filtering subassembly | |
CN202871790U (en) | Infrared remote control amplifier | |
CN203206579U (en) | Device for improving impedance continuity of signal line | |
CN106783805A (en) | Radio frequency multi-chip package and shielding circuit | |
CN202749369U (en) | Infrared remote control amplifier | |
CN206224791U (en) | A kind of big and strong antijamming capability the infrared receiving terminal of receiving angle | |
CN203504952U (en) | Monitoring demodulation module shielding case | |
CN202487732U (en) | Anti-electromagnetic-interference digital high-voltage isolator | |
CN213093201U (en) | Infrared receiving device | |
CN105529312A (en) | Packaging structure | |
CN214123875U (en) | Infrared receiving head | |
CN210444554U (en) | Control panel with anti-interference function | |
CN103928758A (en) | Antenna structure of wireless product | |
CN205092239U (en) | Infrared receiving head packaging structure | |
CN207834291U (en) | The electromagnetic shielding encapsulating structure of tin function is climbed with pin side wall | |
CN206585832U (en) | Pcb board | |
CN202979277U (en) | Iron-casing capacitance silicon microphone with correctable sensitivity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20130220 Effective date of abandoning: 20141015 |
|
AV01 | Patent right actively abandoned |
Granted publication date: 20130220 Effective date of abandoning: 20141015 |
|
RGAV | Abandon patent right to avoid regrant |