CN100447901C - 在闪存器件的多扇区擦除期间用于控制擦除电压的系统与方法 - Google Patents
在闪存器件的多扇区擦除期间用于控制擦除电压的系统与方法 Download PDFInfo
- Publication number
- CN100447901C CN100447901C CNB038179407A CN03817940A CN100447901C CN 100447901 C CN100447901 C CN 100447901C CN B038179407 A CNB038179407 A CN B038179407A CN 03817940 A CN03817940 A CN 03817940A CN 100447901 C CN100447901 C CN 100447901C
- Authority
- CN
- China
- Prior art keywords
- sector
- subclass
- sectors
- voltage
- erasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3472—Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/210,378 US6891752B1 (en) | 2002-07-31 | 2002-07-31 | System and method for erase voltage control during multiple sector erase of a flash memory device |
US10/210,378 | 2002-07-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1672218A CN1672218A (zh) | 2005-09-21 |
CN100447901C true CN100447901C (zh) | 2008-12-31 |
Family
ID=31494277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038179407A Expired - Lifetime CN100447901C (zh) | 2002-07-31 | 2003-03-11 | 在闪存器件的多扇区擦除期间用于控制擦除电压的系统与方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6891752B1 (zh) |
EP (1) | EP1527458B1 (zh) |
JP (1) | JP4249131B2 (zh) |
KR (1) | KR100953330B1 (zh) |
CN (1) | CN100447901C (zh) |
AU (1) | AU2003222282A1 (zh) |
DE (1) | DE60318714T2 (zh) |
TW (1) | TWI286758B (zh) |
WO (1) | WO2004013864A1 (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7200708B1 (en) * | 2003-12-31 | 2007-04-03 | Intel Corporation | Apparatus and methods for storing data which self-compensate for erase performance degradation |
US7450433B2 (en) | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
US7408804B2 (en) | 2005-03-31 | 2008-08-05 | Sandisk Corporation | Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
US7457166B2 (en) | 2005-03-31 | 2008-11-25 | Sandisk Corporation | Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage |
DE602006015930D1 (de) | 2005-03-31 | 2010-09-16 | Sandisk Corp | Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen |
US7522457B2 (en) | 2005-03-31 | 2009-04-21 | Sandisk Corporation | Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage |
KR100715151B1 (ko) * | 2006-05-23 | 2007-05-10 | 삼성전자주식회사 | 메모리 섹터별로 소거 패스 전압을 가지는 불휘발성 반도체메모리 장치 및 이에 대한 소거 방법 |
US7382676B2 (en) * | 2006-06-26 | 2008-06-03 | Semiconductor Components Industries, Llc | Method of forming a programmable voltage regulator and structure therefor |
KR100744014B1 (ko) * | 2006-07-31 | 2007-07-30 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 멀티 블록 소거 방법 |
US7733706B2 (en) * | 2006-09-29 | 2010-06-08 | Hynix Semiconductor Inc. | Flash memory device and erase method thereof |
US7535766B2 (en) | 2006-10-13 | 2009-05-19 | Sandisk Corporation | Systems for partitioned soft programming in non-volatile memory |
US7499338B2 (en) | 2006-10-13 | 2009-03-03 | Sandisk Corporation | Partitioned soft programming in non-volatile memory |
US7499317B2 (en) | 2006-10-13 | 2009-03-03 | Sandisk Corporation | System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling |
US7495954B2 (en) | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
KR100830589B1 (ko) | 2007-04-17 | 2008-05-22 | 삼성전자주식회사 | 워드 라인으로 음의 고전압을 전달할 수 있는 고전압스위치를 갖는 플래시 메모리 장치 |
US7995392B2 (en) | 2007-12-13 | 2011-08-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device capable of shortening erase time |
JP2009163782A (ja) * | 2007-12-13 | 2009-07-23 | Toshiba Corp | 半導体記憶装置 |
US7643352B2 (en) * | 2008-06-03 | 2010-01-05 | Elite Semiconductor Memory Technology Inc. | Method for erasing flash memory |
CN101800078B (zh) * | 2009-02-11 | 2013-02-13 | 北京兆易创新科技有限公司 | 一种非易失存储器的擦除方法及装置 |
KR101710089B1 (ko) | 2010-08-26 | 2017-02-24 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
WO2014019156A1 (en) * | 2012-08-01 | 2014-02-06 | Datacard Corporation | Variable erase for thermally rewritable cards |
EP2892054B1 (en) * | 2012-08-29 | 2019-08-07 | Renesas Electronics Corporation | Semiconductor device |
US9449698B1 (en) | 2015-10-20 | 2016-09-20 | Sandisk Technologies Llc | Block and zone erase algorithm for memory |
KR102377469B1 (ko) | 2015-11-02 | 2022-03-23 | 삼성전자주식회사 | 불휘발성 메모리 장치, 불휘발성 메모리 장치를 포함하는 스토리지 장치 및 불휘발성 메모리 장치의 동작 방법 |
KR102609177B1 (ko) * | 2016-07-04 | 2023-12-06 | 삼성전자주식회사 | 불휘발성 메모리 시스템의 동작 방법 및 불휘발성 메모리 장치의 동작 방법 |
US10141065B1 (en) * | 2017-08-29 | 2018-11-27 | Cypress Semiconductor Corporation | Row redundancy with distributed sectors |
US10460816B2 (en) * | 2017-12-08 | 2019-10-29 | Sandisk Technologies Llc | Systems and methods for high-performance write operations |
CN110838326B (zh) * | 2018-08-17 | 2022-03-11 | 北京兆易创新科技股份有限公司 | 一种存储器的擦除方法和系统 |
CN109256166A (zh) * | 2018-08-22 | 2019-01-22 | 长江存储科技有限责任公司 | 闪存器的擦除方法及闪存器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270979A (en) * | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
US5537358A (en) * | 1994-12-06 | 1996-07-16 | National Semiconductor Corporation | Flash memory having adaptive sensing and method |
CN1143812A (zh) * | 1995-08-18 | 1997-02-26 | 三菱电机株式会社 | 存储装置 |
EP1225596A2 (en) * | 2000-12-07 | 2002-07-24 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396468A (en) * | 1991-03-15 | 1995-03-07 | Sundisk Corporation | Streamlined write operation for EEPROM system |
DE69533429T2 (de) * | 1995-06-07 | 2005-08-18 | Macronix International Co. Ltd., Hsinchu | Automatischer progammier-algorithmus für flash-speicher im seitenmodus mit variabler programmierimpulshöhe und -breite |
US5745410A (en) * | 1995-11-17 | 1998-04-28 | Macronix International Co., Ltd. | Method and system for soft programming algorithm |
US6055184A (en) | 1998-09-02 | 2000-04-25 | Texas Instruments Incorporated | Semiconductor memory device having programmable parallel erase operation |
US6208558B1 (en) | 1999-04-16 | 2001-03-27 | Advanced Micro Devices, Inc. | Acceleration circuit for fast programming and fast chip erase of non-volatile memory |
US6188609B1 (en) | 1999-05-06 | 2001-02-13 | Advanced Micro Devices, Inc. | Ramped or stepped gate channel erase for flash memory application |
US6172909B1 (en) * | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
DE10237584B4 (de) * | 2002-08-16 | 2005-10-06 | Siemens Ag | Verfahren zur Verwaltung von Ressourcen beim Aufbau eines Ersatzpfades in einem transparent schaltbaren Netzwerk |
-
2002
- 2002-07-31 US US10/210,378 patent/US6891752B1/en not_active Expired - Lifetime
-
2003
- 2003-03-11 DE DE60318714T patent/DE60318714T2/de not_active Expired - Lifetime
- 2003-03-11 JP JP2004525963A patent/JP4249131B2/ja not_active Expired - Fee Related
- 2003-03-11 AU AU2003222282A patent/AU2003222282A1/en not_active Abandoned
- 2003-03-11 WO PCT/US2003/007639 patent/WO2004013864A1/en active IP Right Grant
- 2003-03-11 EP EP03717966A patent/EP1527458B1/en not_active Expired - Fee Related
- 2003-03-11 KR KR1020057001807A patent/KR100953330B1/ko not_active IP Right Cessation
- 2003-03-11 CN CNB038179407A patent/CN100447901C/zh not_active Expired - Lifetime
- 2003-04-15 TW TW092108619A patent/TWI286758B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270979A (en) * | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
US5537358A (en) * | 1994-12-06 | 1996-07-16 | National Semiconductor Corporation | Flash memory having adaptive sensing and method |
CN1143812A (zh) * | 1995-08-18 | 1997-02-26 | 三菱电机株式会社 | 存储装置 |
EP1225596A2 (en) * | 2000-12-07 | 2002-07-24 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
Also Published As
Publication number | Publication date |
---|---|
KR100953330B1 (ko) | 2010-04-20 |
DE60318714T2 (de) | 2009-01-08 |
TWI286758B (en) | 2007-09-11 |
CN1672218A (zh) | 2005-09-21 |
JP2006500705A (ja) | 2006-01-05 |
AU2003222282A1 (en) | 2004-02-23 |
US6891752B1 (en) | 2005-05-10 |
EP1527458A1 (en) | 2005-05-04 |
DE60318714D1 (de) | 2008-03-06 |
WO2004013864A1 (en) | 2004-02-12 |
EP1527458B1 (en) | 2008-01-16 |
TW200404293A (en) | 2004-03-16 |
KR20050032103A (ko) | 2005-04-06 |
JP4249131B2 (ja) | 2009-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100447901C (zh) | 在闪存器件的多扇区擦除期间用于控制擦除电压的系统与方法 | |
US8254183B2 (en) | Method of programming nonvolatile memory device | |
US6567316B1 (en) | Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device | |
KR100819102B1 (ko) | 개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치 | |
KR100259972B1 (ko) | 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치 | |
JP2716906B2 (ja) | 不揮発性半導体記憶装置 | |
US6515908B2 (en) | Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same | |
US7630263B2 (en) | Exploiting a statistical distribution of the values of an electrical characteristic in a population of auxiliary memory cells for obtaining reference cells | |
US20050083735A1 (en) | Behavior based programming of non-volatile memory | |
US6909639B2 (en) | Nonvolatile memory having bit line discharge, and method of operation thereof | |
US8213233B2 (en) | Reduction of quick charge loss effect in a memory device | |
US8023330B2 (en) | Method of erasing a nonvolatile memory device | |
KR20010011482A (ko) | 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법 | |
JP2006031926A (ja) | フラッシュメモリのための選択的消去方法 | |
US7450417B2 (en) | Nonvolatile semiconductor memory device | |
KR20010070164A (ko) | 불휘발성 반도체 기억 장치의 기입 방법 | |
US6459619B1 (en) | Non-volatile semiconductor memory device for selectively re-checking word lines | |
US10381091B2 (en) | Reduced voltage nonvolatile flash memory | |
US20240071533A1 (en) | Adaptive gidl voltage for erasing non-volatile memory | |
US7706191B2 (en) | Systems and methods to reduce interference between memory cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070413 Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070413 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070413 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. Effective date of registration: 20070413 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160317 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20081231 |