CN100446240C - 集成电路中的静电保护电路 - Google Patents
集成电路中的静电保护电路 Download PDFInfo
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- CN100446240C CN100446240C CNB200510111177XA CN200510111177A CN100446240C CN 100446240 C CN100446240 C CN 100446240C CN B200510111177X A CNB200510111177X A CN B200510111177XA CN 200510111177 A CN200510111177 A CN 200510111177A CN 100446240 C CN100446240 C CN 100446240C
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Application Number | Priority Date | Filing Date | Title |
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CNB200510111177XA CN100446240C (zh) | 2005-12-06 | 2005-12-06 | 集成电路中的静电保护电路 |
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CNB200510111177XA CN100446240C (zh) | 2005-12-06 | 2005-12-06 | 集成电路中的静电保护电路 |
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CN1979845A CN1979845A (zh) | 2007-06-13 |
CN100446240C true CN100446240C (zh) | 2008-12-24 |
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CNB200510111177XA Active CN100446240C (zh) | 2005-12-06 | 2005-12-06 | 集成电路中的静电保护电路 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001097358A1 (en) * | 2000-06-15 | 2001-12-20 | Sarnoff Corporation | Multi-finger current ballasting esd protection circuit and interleaved ballasting for esd-sensitive circuits |
CN1489210A (zh) * | 2002-10-08 | 2004-04-14 | 台湾积体电路制造股份有限公司 | 静电放电防护电路与相关的金属氧化半导体晶体管结构 |
CN1510749A (zh) * | 2002-12-23 | 2004-07-07 | 矽统科技股份有限公司 | 具有自身触发效能的静电放电防护电路 |
US20040164354A1 (en) * | 2001-06-14 | 2004-08-26 | Sarnoff Corporation | Minimum-dimension, fully- silicided MOS driver and ESD protection design for optimized inter-finger coupling |
CN1542961A (zh) * | 2003-04-29 | 2004-11-03 | 矽统科技股份有限公司 | 具有均匀导通设计的静电放电防护电路 |
CN1577836A (zh) * | 2003-07-28 | 2005-02-09 | 恩益禧电子股份有限公司 | 多指型静电放电保护元件 |
US20050082621A1 (en) * | 2003-10-01 | 2005-04-21 | Jau-Wen Chen | Substrate-biased I/O and power ESD protection circuits in deep-submicron twin-well process |
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2005
- 2005-12-06 CN CNB200510111177XA patent/CN100446240C/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001097358A1 (en) * | 2000-06-15 | 2001-12-20 | Sarnoff Corporation | Multi-finger current ballasting esd protection circuit and interleaved ballasting for esd-sensitive circuits |
US20040164354A1 (en) * | 2001-06-14 | 2004-08-26 | Sarnoff Corporation | Minimum-dimension, fully- silicided MOS driver and ESD protection design for optimized inter-finger coupling |
CN1489210A (zh) * | 2002-10-08 | 2004-04-14 | 台湾积体电路制造股份有限公司 | 静电放电防护电路与相关的金属氧化半导体晶体管结构 |
CN1510749A (zh) * | 2002-12-23 | 2004-07-07 | 矽统科技股份有限公司 | 具有自身触发效能的静电放电防护电路 |
CN1542961A (zh) * | 2003-04-29 | 2004-11-03 | 矽统科技股份有限公司 | 具有均匀导通设计的静电放电防护电路 |
CN1577836A (zh) * | 2003-07-28 | 2005-02-09 | 恩益禧电子股份有限公司 | 多指型静电放电保护元件 |
US20050082621A1 (en) * | 2003-10-01 | 2005-04-21 | Jau-Wen Chen | Substrate-biased I/O and power ESD protection circuits in deep-submicron twin-well process |
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Publication number | Publication date |
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CN1979845A (zh) | 2007-06-13 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |