CN100442496C - Reinforced type thin film crystal-coated packaging structure - Google Patents
Reinforced type thin film crystal-coated packaging structure Download PDFInfo
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- CN100442496C CN100442496C CNB2006100995871A CN200610099587A CN100442496C CN 100442496 C CN100442496 C CN 100442496C CN B2006100995871 A CNB2006100995871 A CN B2006100995871A CN 200610099587 A CN200610099587 A CN 200610099587A CN 100442496 C CN100442496 C CN 100442496C
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- 239000010408 film Substances 0.000 claims description 54
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1705—Shape
- H01L2224/17051—Bump connectors having different shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The present invention relates to a compensation type film crystal coating packaging structure, which mainly comprises a circuit film, a protruding bloke wafer and a point glue body. The circuit film is defined a crystal coating connecting area for the wafer in a rectangle and is provided with a soft dielectric layer and plural pins and plural compensation bars. The plural inner connecting part of the pins are arranged on the around of the crystal coating connecting area, and the compensation bars are formed on the center of the crystal coating connecting area, and are parallel with the two longer sides of the crystal coating connecting area, and can prevent the falling of the soft dielectric layer when connecting the protruding block of the wafer to the inner connecting area of the pins, so the point coating glue body can smoothly be filled between the circuit film and the wafer without the phenomenon of producing air bubble.
Description
Technical field
The present invention relates to a kind of IC circuit packing structure, particularly relate to a kind of can prevent the projection of joint wafer during to the interior junction surface of those pins soft dielectric layer subside, make the spot printing colloid can be filled in smoothly between circuit film and the wafer not can the gassing phenomenon reinforced type thin film crystal-coated packaging structure (Chip-On-Film package).
Background technology
In IC circuit packing structure in the past, a kind of thin-film flip-chip packaging construction is to drive wafer and establish at the display of long rectangle, it is equipped with a gold medal projection respectively on the input of wafer two long sides and output, and through bestowing pressing and heating, to be engaged to the pin of a circuit film.When the heating-up temperature of wafer is passed to this circuit film, regular meeting causes this circuit film to be heated subsiding, and causes distortion, makes follow-up gluing difficulty, and acceptance rate reduces.Especially when the highdensity display of encapsulation drives wafer, because the output quantity of wafer increases, can't all be configured in a wherein long side of wafer,, and can influence the flow rate of spot printing colloid so the wafer output (projection) of part can be disposed at the wherein two short sides of wafer.
Seeing also shown in Figure 1ly, is the schematic cross-section of existing known thin-film flip-chip packaging construction.A kind of existing known thin-film flip-chip packaging construction 100 is to comprise a circuit film 110, a wafer 120 and a bit be coated with colloid 130.This wafer 120 has plurality of bump 121, to be engaged to this circuit film 110.This spot printing colloid 130 is to form in the spot printing mode after sticking brilliant and through capillary flow, to be filled between this wafer 120 and this circuit film 110.
See also Figure 1 and Figure 2, Fig. 2 is the underside perspective view that has known thin-film flip-chip packaging construction now.This circuit film 110 has a soft dielectric layer 111, a plurality of long side pin 112, a plurality of short side pin 113 and a welding resisting layer 114.This welding resisting layer 114 has a perforate 115, to appear those a plurality of interior junction surface 112A that grow side pins 112, those a plurality of interior junction surface 113A that lack side pins 113 and this soft dielectric layer 111 middle position corresponding to this wafer 120.And those projections 121 of this wafer 120 are the surroundings (as shown in Figure 2) that are arranged in an active surface, are engaged to the interior junction surface 112A of those long side pins 112 and the interior junction surface 113A of those short side pins 113 with the hot pressing method.
Therefore, seeing also shown in Figure 3ly, is the existing known schematic cross-section of thin-film flip-chip packaging construction when wafer engages.This soft dielectric layer 111 is the individual layer kenel corresponding to the place, active surface central authorities below of this wafer 120, lack enough supports, in the engaging process of this wafer 120, can be heated and cause subsiding (111A of place that subsides as shown in Figure 3), and then the active surface central authorities that cause this wafer 120 are peripheral less than the active surface of this wafer 120 with the gap of this circuit film 110 and the gap of this circuit film 110, so this spot printing colloid 130 can produce different flow rates in different positions in follow-up spot printing process, particularly subside and to produce bubble 131 (as shown in Figure 1) between the 111A of place and this wafer 120 at this, because the filling of this spot printing colloid 130 is unreal, and the acceptance rate that causes encapsulating reduces.
The application's original application people had once disclosed a kind of " thin-film flip-chip packaging construction " No. 505315 at the TaiWan, China patent announcement, the one flow guide bar is the upper surface that is formed at a flexible film, fill flowing of material (being the spot printing colloid) to guide a bottom, in order to reach the water conservancy diversion effect, the configuration direction of this flow guide bar be with a wafer than long side for vertical, and can't reach tangible support effect, so this flexible film still can be heated and subside.
This shows that above-mentioned existing thin-film flip-chip packaging construction obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new reinforced type thin film crystal-coated packaging structure, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing thin-film flip-chip packaging construction exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new reinforced type thin film crystal-coated packaging structure, can improve general existing thin-film flip-chip packaging construction, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing thin-film flip-chip packaging construction exists, and provide a kind of new reinforced type thin film crystal-coated packaging structure, technical problem to be solved is that to make the one circuit film be that definition has rectangular without exception chip bonding district and has a plurality of pins and a plurality of finishing strips (stiffening bar) on a soft dielectric layer, make and between this circuit film and this wafer, keep the consistent gap that to flow smoothly for colloid, therefore the spot printing colloid that forms at successive process mid point glue can be filled between this circuit film and this wafer smoothly, can gassing, and, be very suitable for practicality with the effect of heat conduction with electrical barrier.
Of the present invention time a purpose is, a kind of new reinforced type thin film crystal-coated packaging structure is provided, technical problem to be solved is to make wherein to be electroplate with a hard metal layer on those finishing strips, can strengthen those finishing strips and can be used to support the ability of this soft dielectric layer, thereby be suitable for practicality more to prevent to subside.
An also purpose of the present invention is, a kind of new reinforced type thin film crystal-coated packaging structure is provided, technical problem to be solved is that to make wherein those finishing strips partly and adjacent those lack side pins be that one is connected, so can be used as ground connection or bus plane also can be formed by same Copper Foil etching with those pins, can not increase the element cost, can promote the attaching of those finishing strips on this soft dielectric layer in addition, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of reinforced type thin film crystal-coated packaging structure that the present invention proposes, it comprises: a circuit film, and it has a soft dielectric layer, a plurality of long side pin, a plurality of short side pins and a plurality of finishing strips; One wafer, it has plurality of bump, and it is to be engaged to these a plurality of long side pins and these a plurality of short side pins; And a bit being coated with colloid, it is formed between this circuit film and this wafer; Wherein, this circuit film definition has one corresponding to this wafer and general rectangular chip bonding district, the a plurality of interior junction surface of these a plurality of long side pins is the two longer sides that are arranged in this chip bonding district, the a plurality of interior junction surface of these a plurality of short side pins is two shorter sides that are arranged in this chip bonding district, these a plurality of finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, to prevent subsiding of when engaging this plurality of bump this soft dielectric layer, be beneficial to the filling of this spot printing colloid to a plurality of short side pin of this a plurality of long side pins and this.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid reinforced type thin film crystal-coated packaging structure wherein is electroplate with a hard metal layer on these a plurality of finishing strips.
Aforesaid reinforced type thin film crystal-coated packaging structure, wherein a plurality of finishing strips of Bu Fen this are to be that one is connected with these adjacent a plurality of short side pins.
Aforesaid reinforced type thin film crystal-coated packaging structure, it includes a welding resisting layer in addition, it is formed on this soft dielectric layer and local these a plurality of long side pins and these a plurality of short side pins of covering, and this welding resisting layer has a perforate, and it is these a plurality of interior junction surfaces and this a plurality of finishing strips that appear these a plurality of long side pins and these a plurality of short side pins.
Aforesaid reinforced type thin film crystal-coated packaging structure, wherein said spot printing colloid are these a plurality of interior junction surfaces of this plurality of bump of sealing, these a plurality of long side pins, these a plurality of interior junction surfaces and these a plurality of finishing strips of these a plurality of short side pins.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of reinforced type thin film crystal-coated packaging structure that the present invention proposes, it comprises: a circuit film, and it has a soft dielectric layer, a plurality of pin and a plurality of finishing strips; One wafer, it has plurality of bump, and it is a plurality of interior junction surface that is engaged to these a plurality of pins; And a bit being coated with colloid, it is formed between this circuit film and this wafer; Wherein, this circuit film definition has one corresponding to this wafer and general rectangular chip bonding district, the junction surface was the periphery that is arranged in this chip bonding district in this of these a plurality of pins was a plurality of, these a plurality of finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, to prevent subsiding of when engaging these a plurality of pins and this plurality of bump this soft dielectric layer, be beneficial to the filling of this spot printing colloid.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid reinforced type thin film crystal-coated packaging structure, wherein the width of these a plurality of finishing strips is the width greater than these a plurality of interior junction surfaces of these a plurality of pins.
Aforesaid reinforced type thin film crystal-coated packaging structure, wherein the surface electrical of these a plurality of finishing strips is coated with a hard metal layer.
Aforesaid reinforced type thin film crystal-coated packaging structure, it includes a welding resisting layer in addition, it is formed on this soft dielectric layer and locally covers this a plurality of pins, and this welding resisting layer has a perforate, and it is these a plurality of interior junction surfaces and this a plurality of finishing strips that appear these a plurality of pins.
Aforesaid reinforced type thin film crystal-coated packaging structure, wherein said spot printing colloid are these a plurality of finishing strips of sealing.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, in order to achieve the above object,, mainly comprise a circuit film, a wafer and a bit be coated with colloid according to a kind of thin-film flip-chip packaging construction of the present invention.This circuit film has a soft dielectric layer, a plurality of pin and a plurality of finishing strips.This wafer has plurality of bump, and it is to be engaged to those pins.This spot printing colloid is to be formed between this circuit film and this wafer.Wherein, this circuit film definition has one corresponding to this wafer and general rectangular chip bonding district, the a plurality of interior junction surface of those pins is the peripheries that are arranged in this chip bonding district, those finishing strips are that to be formed at the central authorities in this chip bonding district and to cover the two longer sides that crystalline substance meets the district with this be parallel, to prevent subsiding of when engaging those projections this soft dielectric layer to those pins, be beneficial to the filling of this spot printing colloid, can gassing.
By technique scheme, reinforced type thin film crystal-coated packaging structure of the present invention has following advantage at least:
1, the present invention has rectangular without exception chip bonding district in circuit film definition, and have a plurality of pins and an a plurality of finishing strips (stiffening bar) on a soft dielectric layer, the interior junction surface of those pins is the peripheries that are arranged in this chip bonding district, those finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, can prevent the projection that engages a wafer the subsiding of this soft dielectric layer during, and make that keep can be for the smooth mobile consistent gap of colloid between this circuit film and this wafer to the interior junction surface of those pins.Therefore, the spot printing colloid that forms at successive process mid point glue can be filled between this circuit film and this wafer smoothly, can gassing, and, be very suitable for practicality with the effect of heat conduction with electrical barrier.
2, the present invention can strengthen those finishing strips and can be used to support the ability of this soft dielectric layer to prevent to subside, thereby be suitable for practicality more by be electroplate with a hard metal layer on those finishing strips.
3, the present invention wherein partly those finishing strips be with those adjacent short side pins be integral connecting structure, so can be used as ground connection or bus plane also can be formed by same Copper Foil etching with those pins, be that those finishing strips are the Copper Foil waste material positions when being selected from the formation of etching originally pin, and can not increase the element cost, the industry that is suitable for is used.In addition, can also promote the attaching of those finishing strips on this soft dielectric layer, thereby be suitable for practicality more.
In sum, the invention relates to a kind of reinforced type thin film crystal-coated packaging structure, consist predominantly of a circuit film, one projection wafer and a bit be coated with colloid, the definition of this circuit film has one corresponding to this wafer and general rectangular chip bonding district and have a soft dielectric layer and a plurality of pin and a plurality of finishing strips, the a plurality of interior junction surface of those pins is the peripheries that are arranged in this chip bonding district, those finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, can prevent the projection that engages this wafer the subsiding of this soft dielectric layer during to the interior junction surface of those pins.Therefore, this spot printing colloid can be filled between this circuit film and this wafer smoothly, can the gassing phenomenon.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing thin-film flip-chip packaging construction has the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic cross-section that has known thin-film flip-chip packaging construction now.
Fig. 2 is the underside perspective view that has known thin-film flip-chip packaging construction now.
Fig. 3 is the existing known schematic cross-section of thin-film flip-chip packaging construction when wafer engages.
Fig. 4 is the schematic cross-section according to a kind of thin-film flip-chip packaging construction of the present invention's first preferred embodiment.
Fig. 5 is the underside perspective view according to the thin-film flip-chip packaging construction of the present invention's first preferred embodiment.
Fig. 6 is the schematic cross-section of thin-film flip-chip packaging construction when wafer engages according to the present invention's first preferred embodiment.
Fig. 7 is the underside perspective view according to another thin-film flip-chip packaging construction of the present invention's second preferred embodiment.
100: thin-film flip-chip packaging construction 110: circuit film
111: soft dielectric layer 111A: the place subsides
112: long side pin 112A: interior junction surface
113: short side pin 113A: interior junction surface
114: welding resisting layer 115: perforate
120: wafer 121: projection
130: spot printing colloid 131: bubble
200: thin-film flip-chip packaging construction 210: circuit film
210A: chip bonding district 210B: longer side
211: soft dielectric layer 212: long side pin
212A: interior junction surface 213: short side pin
213A: interior junction surface 214: finishing strips
215: welding resisting layer 216: perforate
217: hard metal layer 220: wafer
221: projection 230: the spot printing colloid
310: circuit film 310A: the chip bonding district
310B: longer side 311: long side pin
311A: interior junction surface 312: short side pin
312A: interior junction surface 313: finishing strips
314: intercell connector
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of reinforced type thin film crystal-coated packaging structure, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Seeing also shown in Figure 4ly, is the schematic cross-section according to a kind of thin-film flip-chip packaging construction of the present invention's first preferred embodiment.Disclosed a kind of thin-film flip-chip packaging construction according to first specific embodiment of the present invention, this thin-film flip-chip packaging construction 200 mainly comprises a circuit film 210, a wafer 220 and a bit is coated with colloid 230.This wafer 220 is to be engaged on this circuit film 210, and this circuit film 210 is that definition has one corresponding to this wafer 220 and general rectangular chip bonding district 210A (as shown in Figure 5).
See also Fig. 4 and shown in Figure 5, Fig. 5 is the underside perspective view according to the thin-film flip-chip packaging construction of the present invention's first preferred embodiment.Above-mentioned circuit film 210 has a soft dielectric layer 211, a plurality of long side pin 212, a plurality of short side pin 213 and a plurality of finishing strips 214.Usually the material of this soft dielectric layer 211 is to can be polyimides (polyimide PI), as those long side pins 212, those short side pins 213 film carrier with those finishing strips 214, is beneficial to coil type and transmits.And on hardness, those finishing strips 214 are to be higher than this soft dielectric layer 211, can be metal material, for example copper (Cu).Wherein, as shown in Figure 5, the a plurality of interior junction surface 212A of those long side pins 212 is the two longer sides that are arranged in this chip bonding district 210A, the a plurality of interior junction surface 213A of those short side pins 213 is two shorter sides that are arranged in this chip bonding district 210A, and those finishing strips 214 are formed at the two longer side 210B that come and be parallel to this chip bonding district 210A among this chip bonding district 210A.Preferably, the width of those finishing strips 214 is the width greater than junction surface 213A in those of those short side pins 213, can guarantee the performance of suitable reinforcement, heat radiation and electrical barrier.
In the present embodiment, this circuit film 210 includes a welding resisting layer 215 in addition, liquid photosensitive welding cover layer (liquid photoimagable solder mask for example, LPI), photosensitive cover lay (photoimagable cover layer, PIC) or can be the non-conductive printing ink or the cover layer (cover layer) of general non-photosensitive dielectric material.This welding resisting layer 215 is to be formed on this soft dielectric layer 211 and local those long side pins 212 and those the short side pins 213 of covering, and this welding resisting layer 215 is to have a perforate 216, and it is to appear those interior junction surface 212A of those long side pins 212 and those interior junction surface 213A and those finishing strips 214 of those short side pins 213.
Above-mentioned wafer 220 has plurality of bump 221, and it is a periphery of being located at an active surface of this wafer 220.Those projections 221 are to be engaged to those interior junction surface 212A of those long side pins 212 and those interior junction surface 213A of those short side pins 213.
Above-mentioned spot printing colloid 230 is to be formed between this circuit film 210 and this wafer 220.Usually this spot printing colloid 230 is to be a underfill, has good fluidity when spot printing, is filled between this circuit film 210 and this wafer 220 by capillarity.In the present embodiment, this spot printing colloid 230 is those interior junction surface 212A of those projections 221 of sealing, those long side pins 212, those interior junction surface 213A and those finishing strips 214 of those short side pins 213.
Be engaged to the process of this circuit film 210 at this wafer 220, can apply pressure force and heat this wafer 220 and this circuit film 210, make those projections 221 be bonded to those interior junction surface 212A of those long side pins 212 and those interior junction surface 213A of those short side pins 213.
Seeing also shown in Figure 6ly, is the schematic cross-section of thin-film flip-chip packaging construction when wafer engages according to the present invention's first preferred embodiment.Those finishing strips 214 can support this soft dielectric layer 211 that is heated, and it is excessively subsided.So after those projections 221 engage, be the gap that can be consistent between those finishing strips 214 and this wafer 220, in follow-up some glue step, this spot printing colloid 230 can be filled between this wafer 220 and this circuit film 210, and phenomenon that can gassing.
Please consult shown in Figure 4 again, preferably, be to be electroplate with a hard metal layer 217, for example nickel or nickel-containing alloys on those finishing strips 214, its hardness more is higher than those finishing strips 214, can further strengthen those finishing strips 214 and can be used to support the ability of this soft dielectric layer 211 to prevent to subside.
Please consult shown in Figure 5ly again, in the present embodiment, those finishing strips 214 partly are to be connected for one with those adjacent short side pins 213.So those finishing strips 214 can be used as the connection of ground connection or power supply and can be formed by same Copper Foil etching with those pins, promptly those finishing strips 214 are the Copper Foil waste material positions when being selected from the formation of etching originally pin, can not increase the element cost.In addition, can also promote the attaching of those finishing strips 214 on this soft dielectric layer 211.
Seeing also shown in Figure 7ly, is the underside perspective view according to another thin-film flip-chip packaging construction of the present invention's second preferred embodiment.In second specific embodiment, disclosed another kind of thin-film flip-chip packaging construction, mainly comprise a circuit film, a wafer and a bit be coated with colloid, wherein this wafer can be identical with first specific embodiment with the spot printing colloid, so no longer illustrate and illustrate.As shown in Figure 7, this circuit film 310 also defines rectangular without exception chip bonding district 310A, and has an a plurality of long side pin 311 on a soft dielectric layer (figure do not draw), a plurality of short side pins 312 and a plurality of finishing strips 313, the a plurality of interior junction surface 311A of those long side pins 311 is the two longer sides that are arranged in this chip bonding district 310A, the a plurality of interior junction surface 312A of those short side pins 312 is two shorter sides that are arranged in this chip bonding district 310A, those finishing strips 313 are the two longer side 310B that are formed at the central authorities of this chip bonding district 310A and are parallel to this chip bonding district 310A, this soft dielectric layer is heated and subsides in the time of can preventing the wafer joint, and has influenced the filling of spot printing colloid.In the present embodiment, those finishing strips 313 are to interconnect with a plurality of intercell connectors 314 to circularize, the toughness of those finishing strips 313 be can increase, those finishing strips 313 and this soft dielectric layer generation delamination in thermal shock test (thermal shock test) prevented.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1, a kind of reinforced type thin film crystal-coated packaging structure is characterized in that it comprises:
One circuit film, it has a soft dielectric layer, a plurality of long side pin, a plurality of short side pins and a plurality of finishing strips;
One wafer, it has plurality of bump, and it is to be engaged to these a plurality of long side pins and these a plurality of short side pins; And
Any is coated with colloid, and it is formed between this circuit film and this wafer;
Wherein, this circuit film definition has one corresponding to this wafer and general rectangular chip bonding district, the a plurality of interior junction surface of these a plurality of long side pins is the two longer sides that are arranged in this chip bonding district, the a plurality of interior junction surface of these a plurality of short side pins is two shorter sides that are arranged in this chip bonding district, these a plurality of finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, to prevent subsiding of when engaging this plurality of bump this soft dielectric layer, be beneficial to the filling of this spot printing colloid to a plurality of short side pin of this a plurality of long side pins and this.
2, reinforced type thin film crystal-coated packaging structure according to claim 1 is characterized in that wherein being electroplate with a hard metal layer on these a plurality of finishing strips.
3, reinforced type thin film crystal-coated packaging structure according to claim 1 is characterized in that wherein these a plurality of finishing strips partly are is that one is connected with these adjacent a plurality of short side pins.
4, reinforced type thin film crystal-coated packaging structure according to claim 1, it is characterized in that it includes a welding resisting layer in addition, it is formed on this soft dielectric layer and local these a plurality of long side pins and these a plurality of short side pins of covering, and this welding resisting layer has a perforate, and it is these a plurality of interior junction surfaces and this a plurality of finishing strips that appear these a plurality of long side pins and these a plurality of short side pins.
5,, it is characterized in that wherein said spot printing colloid is these a plurality of interior junction surfaces of this plurality of bump of sealing, these a plurality of long side pins, these a plurality of interior junction surfaces and these a plurality of finishing strips of these a plurality of short side pins according to claim 1 or 4 described reinforced type thin film crystal-coated packaging structures.
6, a kind of reinforced type thin film crystal-coated packaging structure is characterized in that it comprises:
One circuit film, it has a soft dielectric layer, a plurality of pin and a plurality of finishing strips;
One wafer, it has plurality of bump, and it is a plurality of interior junction surface that is engaged to these a plurality of pins; And
Any is coated with colloid, and it is formed between this circuit film and this wafer;
Wherein, this circuit film definition has one corresponding to this wafer and general rectangular chip bonding district, the junction surface was the periphery that is arranged in this chip bonding district in this of these a plurality of pins was a plurality of, these a plurality of finishing strips are to be formed at the central authorities in this chip bonding district and are parallel with the two longer sides in this chip bonding district, to prevent subsiding of when engaging these a plurality of pins and this plurality of bump this soft dielectric layer, be beneficial to the filling of this spot printing colloid.
7, reinforced type thin film crystal-coated packaging structure according to claim 6, it is characterized in that the width of these a plurality of finishing strips wherein be greater than this of this a plurality of pins a plurality of in the width at junction surfaces.
8, reinforced type thin film crystal-coated packaging structure according to claim 6 is characterized in that wherein the surface electrical of these a plurality of finishing strips is coated with a hard metal layer.
9, reinforced type thin film crystal-coated packaging structure according to claim 6, it is characterized in that it includes a welding resisting layer in addition, it is formed on this soft dielectric layer and local these a plurality of pins that cover, and this welding resisting layer has a perforate, and it is these a plurality of interior junction surfaces and this a plurality of finishing strips that appear these a plurality of pins.
10, reinforced type thin film crystal-coated packaging structure according to claim 6 is characterized in that wherein said spot printing colloid is these a plurality of finishing strips of sealing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100995871A CN100442496C (en) | 2006-08-01 | 2006-08-01 | Reinforced type thin film crystal-coated packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100995871A CN100442496C (en) | 2006-08-01 | 2006-08-01 | Reinforced type thin film crystal-coated packaging structure |
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| CN101118897A CN101118897A (en) | 2008-02-06 |
| CN100442496C true CN100442496C (en) | 2008-12-10 |
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| CNB2006100995871A Active CN100442496C (en) | 2006-08-01 | 2006-08-01 | Reinforced type thin film crystal-coated packaging structure |
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| TWI841114B (en) * | 2022-12-12 | 2024-05-01 | 南茂科技股份有限公司 | Chip on film package structure |
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| CN102709259B (en) * | 2011-03-28 | 2014-10-29 | 力成科技股份有限公司 | Flip chip molding structure and method of non-array bump |
| US8665407B2 (en) | 2011-11-16 | 2014-03-04 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Chip-on-film structure for liquid crystal panel |
| CN102508369B (en) * | 2011-11-16 | 2014-06-25 | 深圳市华星光电技术有限公司 | Chip-on-film structure for liquid crystal display panel |
| CN104483772B (en) * | 2014-12-10 | 2017-12-26 | 深圳市华星光电技术有限公司 | Chip on film unit |
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| CN101118897A (en) | 2008-02-06 |
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