CN100433248C - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN100433248C
CN100433248C CNB2006100671143A CN200610067114A CN100433248C CN 100433248 C CN100433248 C CN 100433248C CN B2006100671143 A CNB2006100671143 A CN B2006100671143A CN 200610067114 A CN200610067114 A CN 200610067114A CN 100433248 C CN100433248 C CN 100433248C
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Prior art keywords
exhaust
gas
room
carrying room
filter
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CN1841655A (en
Inventor
佐佐木义明
村木雄介
西村荣一
小野优子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)
  • Drying Of Semiconductors (AREA)
  • Ventilation (AREA)
  • Treating Waste Gases (AREA)
  • Separation Of Gases By Adsorption (AREA)

Abstract

In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

Description

Substrate board treatment
Technical field
The present invention relates to possess and import the substrate board treatments such as carrying room, load locking room that outer gas carries out exhaust.
Background technology
To glass substrate (such as crystal liquid substrate) or semiconductor wafer (below, also only be called " wafer ") etc. processed substrate implement the substrate board treatment of particular procedure such as etch processes, film forming processing, possess on and connect the processing unit that load locking room constitutes such as the process chamber that is used for wafer enforcement particular procedure, simultaneously, possess by this processing unit being carried out the carrying room of wafer handing-over (moving into of wafer taken out of) such as transport mechanisms such as carrying arms.
In this carrying room,, take out the untreated wafer that is accommodated in the box container, to the processing unit transmission such as by transport mechanism.Like this, untreated wafer to process chamber, is carried out the processing of wafer by conveyance by load locking room in process chamber.The wafer of finishing dealing with that processing in process chamber finishes turns back to load locking room from process chamber.Then, in carrying room, receive the wafer of finishing dealing with that turns back to load locking room, reclaim to box container by transport mechanism.
In this substrate board treatment, in order to stop the particulate (such as dust, rubbish, attachment, reaction product etc.) that causes the rate of finished products reduction attached on the wafer, such as in atmosphere, carrying out in the carrying room of wafer transferring, the air supply fan of gas outside air supply opening sucks is set at an upper portion thereof, simultaneously, in the bottom exhaust outlet is set, by driving this air supply fan, gas outside air supply opening sucks, from the exhaust outlet exhaust, like this, form top in the carrying room towards certain air-flow of bottom (such as, the down current of air).Substrate board treatment is arranged in the clean room usually, and therefore, the air in the clean room is imported to carrying room, turns back in the clean room from carrying room.
Patent documentation 1: special permission 2001-15578 communique
Patent documentation 2: the spy opens flat 6-224144 communique
Non-patent literature 1:Kanzawa.k, Kitano.J, " A semiconductor devicemanufacturer ' seff orts for controlling and evaluating atmosphericpollution ", (Advanced Semicond uctor Manufacturing Conference andWorkshop, 1995.ASMC 95Proceedings.IEEE/SEM I 1995), 13-15 Nov1995, pp.190-193
Summary of the invention
, when finishing wafer by the carrying room recycling, the gas componant of handling gas is sometimes arrived carrying room by conveyance at that attached on this wafer of finishing dealing with.Under these circumstances, according to carrying room as described above, the air of the sort of gas componant and carrying room together, such as to the clean room exhaust, so, according to the kind difference of the gas componant that comprises in this exhaust, might pollute clean chamber interior.Such as, serving as to handle under the situation that gas uses with the corrosive gass such as gas that contain Cl, Br, if contain the sort of gas componant (such as, Cl 2, Br 2, HCl, HBr etc.) air from carrying room to the clean room exhaust, then the material of the machinery in the clean room might corrode.
This point, also consider if the exhaust outlet of carrying room is connected on the exhaust equipment (such as the equipment of removing the evil) of factory, the gas of discharging from carrying room all is discharged to the exhaust equipment of factory, still, like this, the such problem of burden that has the exhaust equipment that increases factory.
In addition, at present, known have such design: in substrate board treatment or clean room, do not enter its inside in order to make particulate etc., in the air feed side of substrate board treatment or clean room filter is set, remove particulate etc.Such as, patent documentation 1 and non-patent literature 1 is such design: air feed one side (upper side) in the zone of the whole clean room of placement substrate processing unit etc. or zoning clean room is provided with filter, and patent documentation 2 is such design: air feed one side (sidepiece) at vertical thermal processing apparatus is provided with filter.
, this present substrate board treatment or clean room are provided with filter in its air feed one side, do not enter in substrate board treatment or the clean room in order to make particulate etc., have considered air feed one side, do not consider exhaust one side.Therefore, even incite somebody to action the carrying room that the filter of air feed one side as prior art is applicable to substrate board treatment at that, can not solve the problem as described above that produces because of exhaust from carrying room.
Therefore, the present invention implements in view of such problem, its purpose is the substrate board treatment that provides such: can prevent such as the exhaust of the gas componant of handling gas attached to the corrosive gas on the substrate of finishing dealing with etc. and carrying room etc. together, discharge to the outside at that, can alleviate the burdens such as exhaust equipment of factory.
In order to solve above-mentioned problem, certain viewpoint according to the present invention, a kind of substrate board treatment is provided, it is characterized in that, possesses the processing unit that is used for processed substrate is implemented particular procedure, with move into the carrying room of taking out of processed substrate to this processing unit, described carrying room possesses: the gas supply part of gas outside importing in described carrying room; Relatively be provided with described gas supply part, to carrying out the exhaust portion of exhaust in the described carrying room; Be arranged on described exhaust portion, the exhaust gas filter mechanism that described exhaust is filtered.In the case, described exhaust gas filter mechanism removes filter such as the harmful components of the harmful components that contain in the described exhaust and constitutes by removing at least.Specifically, such as constituting by chemical filter or active carbon filter.
Relate to substrate board treatment of the present invention according to this, such as processing gases such as corrosive gas attached to the substrate of finishing dealing with on, and former state ground moved under the situation of carrying room, the gas componant of this processing gas is removed by discharge filter, afterwards, quilt is to outside exhaust.Like this, the exhaust that can prevent this gas componant former state ground and carrying room etc. is discharged to the outside together.In addition, owing to removing attached to carrying out exhaust after the gas componant that enters carrying room on the substrate of finishing dealing with, therefore, and can be not by exhaust equipment such as factory, the exhaust of carrying room is vented to outside the carrying room at that.Like this, can alleviate the burden of the exhaust equipment of factory significantly.
In addition, described exhaust portion possesses and is arranged on than described exhaust gas filter mechanism also near the ventilating fan of the dirty side of described exhaust, like this, ventilating fan can not be exposed in the corrosion composition that exhaust comprises, therefore, as ventilating fan, there is no need to use the product of corrosion resistance.
In addition, the gas supply part in the aforesaid substrate processing unit preferably possesses the air feed filter mechanism that the outer gas that imports in the described carrying room is filtered.In the case, the air feed filter mechanism is removed the filter formation by removing the amine composition that imports the amine composition that outer gas contained (ammonia, amine etc.) in the carrying room at least.Specifically, for example constitute by chemical filter or active carbon filter.
According to such design, by by the air feed filter mechanism that is arranged on gas supply part, from the outer gas that imports to carrying room, remove amine composition (such as ammonia), such as the gas componant of the processing gas of corrosive gas etc. attached to the substrate of finishing dealing with on, former state ground is moved under the situation of carrying room etc., by this gas componant and amine composition generation chemical reaction, can prevent from substrate, to produce particulate.Like this, by not only exhaust gas filter mechanism being set, and the air feed filter mechanism also is set, can makes the countermeasure when being moved in the carrying room attached on the substrate of finishing dealing with and former state ground perfectly safe such as gas at gas supply part in exhaust portion.
In addition, above-mentioned air feed filter mechanism not only possesses the amine composition and removes filter, also can possess the particle of removing the particle that is contained in the outer gas that imports in the described carrying room and remove filter.Like this, can prevent that particles such as rubbish or dust and outer gas from entering in the carrying room together.
In order to solve above-mentioned problem, another viewpoint according to the present invention, a kind of substrate board treatment is provided, it is characterized in that, possess and be used for processed substrate is implemented the processing unit of particular procedure and by load locking room processed substrate moved into the carrying room of taking out of this processing unit, described load locking room possesses: the gas supply part of gas outside the indoor importing of described load-lock; To the sour exhaust portion of described load-lock indoor acid carrying out exhaust be arranged on described sour exhaust portion, the exhaust gas filter mechanism that described sour exhaust is filtered.In the case, described exhaust gas filter mechanism removes filter by the harmful components of removing the harmful components that contained in the described exhaust at least and constitutes.
Relate to substrate board treatment of the present invention according to this, can from the exhaust of discharging, remove the harmful components of the gas componant etc. of corrosive gas by the sour exhaust portion of load locking room.Like this, the sour exhaust portion with load locking room is not connected on the exhaust equipment of factory, can carry out exhaust at that, therefore, can alleviate the burden of factory's exhaust equipment.
In addition, the gas supply part at above-mentioned load locking room also can possess the air feed filter mechanism that filters the indoor outer gas of the described load-lock of importing.In the case, the air feed filter mechanism is removed filter such as the amine composition that imports the amine composition that is contained in the indoor outer gas of described load-lock and is constituted by removing at least.Like this, such as the gas componant of processing gases such as corrosive gas attached to the substrate of finishing dealing with on, moved at that under the situation of load locking room,, can be prevented from substrate, to produce particulate by amine composition generation chemical reactions such as this gas componant and ammonia.
In order to solve above-mentioned problem, another viewpoint according to the present invention, a kind of substrate board treatment is provided, it is characterized in that, possess and be used for processed substrate is implemented the processing unit of particular procedure and moved into the carrying room of taking out of processed substrate to this processing unit, also possess and be connected on the described carrying room, have substrate and treat unit room and this substrate is treated that unit room carries out the standby unit of the exhaust portion of exhaust, described substrate treats that unit room makes the interim standby of handling by described processing unit of processed substrate; And the exhaust portion that is arranged on described standby unit, the exhaust gas filter mechanism that described sour exhaust is filtered.In the case, removing filter such as exhaust gas filter mechanism by the harmful components of removing the harmful components that contain in the described exhaust at least constitutes.
According to this substrate board treatment of the present invention, the harmful components such as gas componant that can from the exhaust of discharging, remove corrosive gas of relating to by the exhaust portion of standby unit.Like this, the exhaust portion with the standby unit is not connected on the exhaust equipment of factory, can carry out exhaust at that, therefore, can alleviate the burden of factory's exhaust equipment.
In addition, in the case, further connect the definite position determining means in position that is used to carry out described processed substrate on described carrying room, described standby configuration of cells is under described position determining means.By this configuration, can improve the operating efficiency of the transport mechanism of the processed substrate of conveyance in carrying room, can improve production capacity.
According to the present invention, such as the gas componant of processing gases such as corrosive gas attached to the substrate of finishing dealing with on, moved at that under the situation of carrying room etc., can prevent that this gas componant from discharging to the outside together with the exhaust of carrying room etc. at that.In view of the above, the exhaust of carrying room etc. directly can be discharged in the clean room etc.Like this, because the exhaust that there is no need the carrying room that air displacement is many etc. is to the exhaust equipment exhaust such as factory, therefore, also can alleviate the burden that the exhaust equipment to factory applies significantly.
Description of drawings
Fig. 1 relates to the sectional view of configuration example of the substrate board treatment of embodiments of the present invention for expression.
Fig. 2 is used to illustrate the key diagram that produces the process of particulate on the wafer of handling.
Fig. 3 is the standing time of the wafer handled of expression and the key diagram that concerns between the particulate number that produces on the wafer of handling.
Fig. 4 is for the sectional view of the summary formation of expression carrying room, for see the figure in the cross section of carrying room from end direction.
Fig. 5 is for the sectional view of the summary formation of expression carrying room, for see the figure in the cross section of carrying room 200 from the side of length direction.
Fig. 6 is the schematic diagram that is used to illustrate the formation of chemical filter, is the figure when seeing chemical filter a part of from the top.
Fig. 7 carries out the figure of configuration example of the carrying room of exhaust for expression utilizes the oxygen exhaust unit.
Fig. 8 relates to the sectional view of other configuration examples of the substrate board treatment of embodiments of the present invention for expression.
Symbol description: substrate board treatment; 110 (110A, 110B) vacuum treatment unit; 120 carrying devices; 132 (the case platforms of 132A～132C); 134 (the box containers of 134A～134C); 136 (the families of power and influence of 136A～136C); 137 locators; 138 rotation mounting tables; 139 optical pickocffs; 140 (140A, 140B) chambers; 142 (142A, 142B) mounting table; 144 (144A, 144B) family of power and influence; 150 (150A, 150B) load locking room; 152 (152A, 152B) family of power and influence; 154 (154A, 154B) buffering mounting table; 156 (156A, 156B) buffering mounting table; 160 common transport mechanisms (atmospheric side transport mechanism); 162 base stations; The indivedual transport mechanisms of 170 (170A, 170B); 172 (172A, 172B) pick up portion; 180 control parts; 200 carrying rooms; 210 frameworks; 212,214,216 move into and take out of mouth; 220 big well portions (top); 222 air supply openings; 230 gas supply parts; 232 air supply fans; 234 air feed filter mechanisms; 236 gas supply filters; 238 frameworks; 240 bottoms (bottom); 242 exhaust outlets; 250 exhaust portion; 252 ventilating fans; 254 exhaust gas filter mechanisms; 256 discharge filters; 258 frameworks; 260 spaces; 280 down currents; 300 sour exhaust units; 310 substrates are treated unit room; 320 sour exhaust portion; 322 blast pipes; 400 carrying rooms; 410 blast pipes; 412 exhaust outlets; 500 substrate board treatments; 510 vacuum treatment units; 520 conveyance unit; 540 (the process chambers of 540A～540F); 542 (the mounting tables of 542A～542F); 544 (the families of power and influence of 544A～544F); 550 common carrying rooms; 554 (554M, 554N) family of power and influence; 560 (560M, 560N) load locking room; 564 (564M, 564N) family of power and influence; 570 transport mechanisms (inlet side transport mechanism); 572 base stations; 574 guide rails; 576 arm mechanisms; The W wafer.
Embodiment
Below, with reference to accompanying drawing,, at length describe about suitable execution mode of the present invention.In addition, in this specification and drawing,,, omit repeat specification by giving prosign about substantially having the inscape that same function constitutes.
(configuration example of substrate board treatment)
At first, the configuration example about the substrate board treatment that relates to embodiments of the present invention describes with reference to accompanying drawing.Here, be that example describes with the substrate board treatment that on carrying room, connects more than one at least vacuum treatment unit.Fig. 1 relates to the sectional view of configuration example of the substrate board treatment of embodiments of the present invention for expression.
Substrate board treatment 100 possesses processed substrate is carried out one or two above vacuum treatment units 110 of various processing such as film forming processing, etch processes such as semiconductor wafer (following only be called " wafer ") W and moves into the conveyance unit 120 of taking out of wafer W to this vacuum treatment unit 110.Conveyance unit 120 has carrying room 200 shared when the conveyance wafer W.
The side that Fig. 1 is illustrated in conveyance unit 120 is provided with such as two vacuum treatment unit 110A, 110B.Each vacuum treatment unit 110A, 110B are connected setting with process chamber 140A, 140B respectively, have load locking room 150A, 150B that vacuum-pumping ground constitutes.Each vacuum treatment unit 110A, 110B constitute like this: manage throughout in chamber 140A, the 140B wafer is implemented to handle such as processing of the same race or mutually different xenogenesis.Manage throughout in chamber 140A, the 140B, be respectively arranged with the mounting table 142A, the 142B that are used for the mounting wafer W.In addition, the vacuum treatment unit 110 that is made of this process chamber 140 and load locking room 150 is not limited to two, can further append setting.
The carrying room 200 of above-mentioned conveyance unit 120 is by such as N 2The cross section that inert gas such as gas or peace and quiet air circulate constitutes for slightly rectangular-shaped casing.Constituting on the side that cross section on the carrying room 200 is slightly rectangular-shaped long limit, be set up in parallel a plurality of case platform 132A～132C.These case platforms 132A～132C plays a role as the processed substrate standby port of mounting box container 134A～134C.Among Fig. 1, enumerate such as the example that can distinguish a box container 134A～134C of each mounting on each case platform 132A～132C, still, the quantity of case platform and box container is not limited thereto, and such as being one or two, also can be provided with more than four.
Among each box container 134A～134C, can accommodate maximum 25 wafer W with equidistant multilayer ground mounting, inside becomes such as N 2The airtight construction that gas is full of.In addition, carrying room 200 constitutes like this: can move into to its inside by family of power and influence 136A～136C and take out of wafer W.
In carrying room 200, be provided with along the common transport mechanism (atmospheric side transport mechanism) 160 of its length direction (direction of arrow of representing among Fig. 1) conveyance wafer W.This common transport mechanism 160 is such as being fixed on the base station 162, and the central part of this base station 162 in carrying room 200 moves such as sliding by linear driving mechanism on the not shown guide rail of She Zhiing along its length.Common transport mechanism 160 can be two both arms mechanisms of picking up portion that possess as shown in Figure 1, in addition, also can be to possess a single armed mechanism of picking up portion.
In the cross section that constitutes carrying room is on the another side on rectangular-shaped long limit, is connecting the cardinal extremity of above-mentioned two load locking room 150A, 150B by the family of power and influence (the atmospheric side family of power and influence) 152A, the 152B that can constitute respectively with opening and closing.The front end of each load locking room 150A, 150B is connected on above-mentioned process chamber 140A, the 140B by the family of power and influence (the inlet side family of power and influence) 144A, the 144B that can constitute with opening and closing.
In each load locking room 150A, 150B, be respectively arranged with interim mounting wafer W, carry out a pair of buffering mounting table 154A, 156A and 154B, the 156B of standby.Here, be the first buffering mounting table with the buffering of carrying room side with mounting table 154A, 154B, be second to cushion and use mounting table with the buffering of opposite side with mounting table 156A, 156B.In addition, between two bufferings are with mounting table 154A, 156A and between 154B, the 156B, be provided with can bend and stretch, the indivedual transport mechanisms (inlet side transport mechanism) 170A, the 170B that constitute by multi-joint arm of rotation and lifting.
Front end at these indivedual transport mechanism 170A, 170B, the 172A of portion, 172B are picked up in setting, use this to pick up the 172A of portion, 172B, at first, second two buffering mounting table 154A, 156A, and between 154B, the 156B, can carry out the reception of wafer W and transmit transfer.In addition, take out of, use above-mentioned indivedual transport mechanism 170A, 170B to carry out respectively from the moving into of wafer W that load locking room 150A, 150B carry out in process chamber 140A, 140B.
In an end of carrying room 200, promptly constitute on the side of cross section for slightly rectangular-shaped minor face, be provided as the locator (pre-adjustment platform) 137 of the position fixing apparatus of wafer W.Locator 137 is such as the optical pickocff 139 of the circumference that possesses rotation mounting table 138 and optical detection wafer W in inside, and the plane of orientation of detection wafer W or recess etc. carry out the position and determine.
In the other end of carrying room 200, promptly constitute on the another side of cross section for slightly rectangular-shaped minor face, be provided as the oxygen exhaust unit 300 of standby unit.This oxygen exhaust unit 300 is according to attached to the gas componant of the processing gas on the wafer W of finishing dealing with etc., till making it standby and no longer emitting to the gas of emitting from the wafer W of finishing dealing with.The formation back narration of this oxygen exhaust unit 300.
In addition, in the configuration example of substrate board treatment shown in Figure 1, enumerating the situation that oxygen exhaust unit 300 is set in the end with the opposite side of locator 137 is example, but might not be confined to this, also oxygen exhaust unit 300 can be arranged on and locator 137 end of the same side mutually, promptly be arranged on the end of carrying room 200.In the case, preferably oxygen exhaust unit 300 is arranged on locator 137 under.
By making this configuration, by common transport mechanism 160 such as take out of the wafer W of finishing dealing with from load locking room 150 1, just common transport mechanism 160 is moved to the ad-hoc location of carrying room 200 1 ends, when the wafer W of finishing dealing with is moved into oxygen exhaust unit 300, can from locator 137, take out of untreated wafer W like this.Like this, the operating efficiency of common transport mechanism 160 can be improved, production capacity can be improved.
Carry out under the situation of processing of wafers at substrate board treatment,, take out the wafer W of handling from each box container 134A～134C by common transport mechanism 160 by this formation.By the wafer W that common transport mechanism 160 takes out, to locator 137, transfer is on the rotation mounting table 138 of locator 137, in this position that is fixed by conveyance.The wafer W of position of being fixed is accepted maintenance by above-mentioned common transport mechanism 160 once more, by conveyance to the load locking room 150A of vacuum treatment unit 110A that this wafer W is handled or 110B or the dead ahead of 150B.Then, in case family of power and influence 152A or 152B are opened, then the wafer W that is kept by common transport mechanism 160 is just from carrying room 200 conveyance in load locking room 150A or 150B.Conveyance one end of the wafer W of carrying out to load locking room 150A or 150B, family of power and influence 152A or 152B just are closed.
A dozen open the door valve 144A or 144B, the wafer W of moving in load locking room 150A or 150B is just moved into to process chamber 140A or 140B by indivedual transport mechanism 170A or 170B.The wafer W of carrying out to process chamber 140A or 140B move into an end, family of power and influence 144A or 144B just are closed, and in process chamber 140A or 140B, such as being to handle gas to use with the corrosive gas, wafer W are implemented particular procedure such as etch processes.
Then, the processing of the wafer W in process chamber 140A or 140B finishes, a dozen open the door valve 144A or 144B, and wafer W is just taken out of to load locking room 150A or 150B by indivedual transport mechanism 170A or 170B.The wafer W of carrying out to load locking room 150A or 150B take out of an end, family of power and influence 144A or 144B just are closed, and carry out the action of taking out of to the wafer W of carrying room 200.That is,, behind the atmosphere opening in having carried out load locking room 150A or 150B, open family of power and influence 152A or 152B in order to eliminate the carrying room 200 that is in atmospheric pressure state and the pressure differential in load locking room 150A or the 150B.So the wafer W of finishing dealing with is returned to carrying room 200 from load locking room 150A or 150B by common transport mechanism 160, family of power and influence 152A or 152B are closed.
(attached to the gas countermeasure on the wafer W of finishing dealing with)
Yet the gas of handling gas returns to carrying room 200 by load locking room 150 from process chamber 140 sometimes attached on the wafer W of finishing processing after handling like this.Attached to the gas on the wafer W of finishing processing, produce following problems by this.
Such as, gas is attached on the wafer W of finishing processing, if arrived carrying room 200 by conveyance like this, then and the wafer W of finishing processing together, gas componant attached to the processing gas on the wafer W of finishing processing enters carrying room 200, therefore, in the exhaust of carrying room 200, contain the sort of gas componant sometimes.So,,, then might make like this and contain this gas componant (such as Cl if at that the air in the carrying room 200 are discharged to the outside such as serving as to handle under the situation that gas uses with the corrosive gas that contains gases such as Cl, Br etc. 2, Br 2, HCl, HBr) etc. harmful components be deflated.
So, among the present invention, the exhaust one side setting of carrying room 200 remove contain Cl, Br gas componants such as gas (such as Cl 2, Br 2, HCl, HBr) exhaust gas filter mechanism, eject exhaust by exhaust gas filter mechanism from carrying room 200.Like this, be included in from the composition in the exhaust of carrying room 200 and be removed by exhaust gas filter mechanism, so, can prevent under the state that contains the gas componants such as gas that comprise Cl, Br to the outside of carrying room 200 (such as the clean room that substrate board treatment 100 is set) exhaust.
In addition, sometimes, above-mentioned the sort of gas componant (such as the gas componant of the halogens such as gas that contain F, Br, Cl) and the surface combination of finishing the wafer W of processing attached to the processing gas on the wafer W of finishing processing after just handling form compound.If form this compound finishing on the wafer W of processing,, might produce particulate (reaction product) on the wafer W of processing finishing then such as by being included in the composition in the atmosphere of surrounding the wafer W of finishing processing.
Here, about resulting from this gas componant,, describe with reference to accompanying drawing finishing the particulate that produces on the wafer W of processing attached to the processing gas on the wafer W of finishing processing.Fig. 2 is used to illustrate the figure that produces the process of particulate on the wafer W of processing finishing.
Shown in Fig. 2 (a), gas componant and the surface combination of finishing the wafer W of processing attached to the processing gas on the wafer W of finishing processing form compd A.Such as, if in handling gas, contain halogen gas composition (such as the gas componant that contains gases such as F, Cl, Br), then these gas componants such as with the wafer W of finishing processing on SiO 2Deng combination, form compd A finishing on the wafer W of processing.
In the case, finish in the atmosphere of wafer W of processing in encirclement,, then finish the halogen compound and the reaction of the amine composition in the atmosphere of compd A of the wafer W of processing if contain such as the amine composition, shown in Fig. 2 (b), on the surface of the wafer W of finishing processing, form salt B.Here, in the amine composition such as comprising ammonia, amine etc.In the amine such as containing trimethylamine, triethylamine, organic base amine etc.
Like this, if with chemical formulation finishing on the wafer W of processing a series of processes that form salt B, then shown in following chemical formula (1-1)～(1-3).Here be expressed as follows process: the surface composition (SiO that finishes the wafer W of processing 2) and handle gas componant (HF) combination of gas, form compound (SiF 4), this compound (SiF 4) and atmosphere in ammonia (NH 3) reaction, form halogen ammonia salt [such as (NH 4) 2SiF 6].
SiO 2+4HF→SiF 4+2H 2O……(1-1)
SiO 2+4HF+4NH 3→SiF 4+2H 2O+4NH 3……(1-2)
SiF 4+2HF+2NH 3→(NH 4) 2SiF 6……(1-3)
Finish the surface composition (SiO of the wafer W of processing 2) and handle gas componant (HF) combination of gas, form compound (SiF 4), in the case, usually consider as above-listed chemical formula (1-1) to react.
But, in the case, if in atmosphere, contain ammonia (NH 3), then also can expect the reaction as above-listed chemical formula (1-2).In such chemical formula (1-1), reacting needed reaction energy to the right from the left side is 1.0eV, relative therewith, in chemical formula (1-2), reacts needed reaction energy to the right from the left side, and (1-1) is much lower than above-listed chemical formula, is 0.4eV.
Like this, if in atmosphere, comprise ammonia (NH 3), then because easier the carrying out of reaction of above-mentioned chemical formula (1-2), so becoming on the surface of the wafer W of finishing processing forms compound (SiF easily 4).Therefore, because the reaction of above-listed chemical formula (1-3) also carries out easily, so, form ammonia the salt [(NH of halogen easily 4) 2SiF 6].
Like this, be placed in and contain ammonia (NH if adhere to the wafer W of finishing processing of halogen gas composition 3) atmosphere in, then on the surface of the wafer W of finishing processing, form the ammonia salt of halogen [as (NH 4) 2SiF 6].
Like this, if form salt B as halogen ammonia salt on the surface of the wafer W of finishing processing, then this salt B that finishes on the wafer W of processing absorbs the moisture (H that is contained in the atmosphere of surrounding the wafer W of finishing processing at leisure 2O).So,, produce the particulate C shown in Fig. 2 (c) along with the process of time.That is, the small particle C that initial generation promptly uses the electron microscope about 0.001 μ m to measure, along with its quantity increases at leisure, the size of these particulates C also slowly increases.Such as through about one hour, grow into about 0.1 μ m, pass through again about twenty four hours, the particulate C that grows into about 0.5 μ m～0.7 μ m is then also arranged.
Thereafter, through about couple of days, salt B is by the moisture (H in the atmosphere 2O) deliquescence, cohesion.Then, in particulate C such as containing SiO 2Situation under, shown in Fig. 2 (d), after the volatilization of particulate C finishes, SiO 2Remain on the wafer W of finishing processing as residue D.In addition, if in particulate C, do not contain such as SiO 2, then particulate C volatilization disappears.
Here, about being positioned over the situation in the atmosphere that does not contain the ammonia composition and being positioned under the situation in the atmosphere that contains the ammonia composition by containing the wafer W of finishing processing of having implemented processing such as etching such as the processing gas of F composition, its standing time and diagrammatize, be illustrated among Fig. 3 in the relation of finishing between the particulate number that produces on the wafer W of processing.
Fig. 3 (a) is positioned over situation in the atmosphere that does not contain the ammonia composition for the wafer W that will finish processing, and Fig. 3 (b) is positioned over situation in the atmosphere that contains the ammonia composition for the wafer W that will finish processing.Among Fig. 3, express time on transverse axis, expression particulate number on the longitudinal axis.The chart that Fig. 3 represents is such chart: t before processing p, handle back (after 0 hour) t 0, handle t after back a hour 1, handle t behind the twenty four hours of back 24By such as electron microscope finish measure on the wafer W of processing can be more than the observed 0.12 μ m particulate of size.
According to this experimental result, shown in Fig. 3 (a), under the wafer W that will finish processing is positioned over situation in the atmosphere that does not contain the ammonia composition, finish the particulate number on the wafer W of processing, even effluxion also changes hardly.In contrast, shown in Fig. 3 (b), under the wafer W that will finish processing is positioned over situation in the atmosphere that contains the ammonia composition, find it only is to place, finish on the wafer W of processing the particulate number in time process and increased.In addition, in above-mentioned experiment, enumerate such example and be illustrated: in the processing gas of the wafer W of finishing processing, contain under the situation of F composition, form ammonia salt [as (NH finishing on the wafer W of processing 4) 2SiF 6], still, in the processing gas of the wafer W of finishing processing, contain under the situation of other halogenic ingredients (as Br etc.), also with above-mentioned situation similarly, form ammonia salt on the wafer W of processing [as (NH finishing 4) 2SiBr 6Deng], therefore, produce particulate finishing on the wafer W of processing.
Like this, on the wafer W of handling after just finishing of finishing processing, according to the kind of handling gas, the gas componant of this processing gas (as contain F, Br, Cl halogen gas composition) and finish the surface combination of the wafer W of processing, form compound, the amine compositions such as ammonia that comprised in this compound and the atmosphere react, and become the salt of particulate.Like this, about handling the wafer W of finishing processing after the firm end, only, just produce particulate by being placed in the atmosphere that contains amine compositions such as ammonia.Therefore, the wafer W of finishing processing by conveyance under the situation of carrying room 200, if import the outer gas that contains the ammonia composition,, also may produce particulate finishing on the wafer W of processing even then by the atmosphere in the carrying room 200.
This ammonia composition is also emitted such as the operator health in clean room, so, if the air with clean room is outer gas, import at that in the carrying room 200, then in the air that is imported into, must contain the ammonia composition, therefore, finish the possibility height that produces particulate on the wafer W of processing.At this moment, can expect, remove the deammoniation composition, still,, exist for the environment of keeping in the clean room and expend such problems such as great amount of cost if like this from clean room itself by filter cleaning chamber itself.
Particularly, in recent years, consider from cost problem as described above, such trend is arranged: be not to clean to carrying out height in the factory or in the clean room, as adopt the minienvironment system etc. of SMIF (StandardMechanical Interface) etc., only carry out the local cleaningization that the part of necessity such as in the substrate board treatment is carried out noble and unsullied purification.
But, in the up-to-date factory of the minienvironment system that has imported such a employing SMIF etc., although use local cleanization technology, particulate countermeasures such as rubbish or dust have been carried out, but present situation is that the particulate of corrosive gas composition as described above is not implemented such as the generation countermeasure of the particulate that is produced by the ammonia composition.
For this reason, among the present invention, remove the air feed filter mechanisms such as chemical filter of amine compositions such as deammoniation in the air supply opening setting of carrying room 200, by this air feed filter mechanism, gas outside the importing to carrying room 200 in.In view of the above, being included in the amine composition that contains in the air that imports in carrying room 200 is removed by the air feed filter mechanism, so, can prevent to produce the particulate (such as the particulate of corrosive gas composition, such as the particulate that produces based on the ammonia composition) that results from attached to the gas componant of the processing gas on the wafer W of finishing processing.
Like this, among the present invention, exhaust one side of carrying room 200 not only, and in air feed one side, by filter is set, also can make for perfectly safe attached to the countermeasure of the gas on the wafer W of finishing processing.
(configuration example of carrying room)
Below, relate to the configuration example of the carrying room of this embodiments of the present invention with reference to description of drawings.Fig. 4, Fig. 5 relate to the sectional view that the summary of the carrying room 200 of present embodiment constitutes for expression.Fig. 4 is for seeing the figure in the cross section of carrying room 200 from end direction, Fig. 5 is for seeing the figure in the cross section of carrying room 200 from the side surface direction (side of case platform 1 32 is set) of length direction.In addition, among Fig. 4, omit common transport mechanism 160, omitted locator 137 among Fig. 5.
As shown in the figure, carrying room 200 is by constituting such as stainless steel or aluminum framework 210 zonings.In the courtyard portion (top) 220 of framework 210, configuration imports air the gas supply part 230 of carrying room 200 inside, on the bottom (bottom) 240 of framework 210, the air (outer gas) that configuration will import from gas supply part 230 is to the exhaust portion 250 of the outside exhaust of carrying room 200.Like this, by relatively putting exhaust portion 250, in carrying room 200, form air down current 280 from (bottom) 240, courtyard portion (top) 220 towards the bottom with gas supply part 230.Below, the formation about this gas supply part 230 and exhaust portion 250 at length describes.
At first, describe about gas supply part 230.Gas supply part 230 possesses: the air supply opening 222 from the courtyard portion (top) 220 that is arranged on framework 210 import air air supply fan 232, filter the air feed filter mechanism 234 of the air that imports from air supply opening 222 by air supply fan 232.
Specifically, on the length direction of the courtyard portion (top) 220 of framework 210, roughly equally spaced be provided with a plurality of air supply openings 222 (222A～222C), these air supply openings 222 (222A～222C) under dispose a plurality of air supply fans 232 (232A～232C) respectively.In addition, these air supply fans 232 (232A～232C) under configuration air feed filter mechanism 234.
Air feed filter mechanism 234 by constituting such as gas supply filter 236 and the framework 238 that freely keeps gas supply filter 236 with dismantling.In addition, air feed filter mechanism 234 also can directly be installed in gas supply filter 236 on framework 210 grades with freely dismantling and constitute.
Gas supply filter 236 is included in by removing that (the amine composition of the airborne amine composition that 222A～222C) imports is removed formations such as filter from air supply opening 222.Here, in the amine composition such as containing ammonia, amine etc.In the amine such as containing trimethylamine, triethylamine, organic base amine etc.Specifically, gas supply filter 236 is such as being made of chemical filter, active carbon filter etc.
In addition, air feed filter mechanism 234 also can be made above-mentioned amine composition and removes filter and remove the dust that contained in the outer gas that imports in the carrying room 200 or the particle of particle (particulate) such as rubbish is removed the so two-layer formation of filter.In view of the above, can prevent that particles such as rubbish or dust enter in the carrying room 200 with outer gas.Remove filter as particle, such as enumerating ULPA (Ultra Low Penetration Air) filter.
On the other hand, the exhaust portion 250 exhaust gas filter mechanism 254 that possesses the ventilating fan 252 of exhaust outlet 242 air-outs from the bottom (bottom) 240 that is formed on framework 210 and filter the air of discharging from exhaust outlet 242 by ventilating fan 252.
Specifically, on the length direction of the bottom 240 of framework 210, roughly equally spaced be provided with a plurality of exhaust outlets 242 (242A～242E), these exhaust outlets 242 (242A～242E) under, dispose a plurality of ventilating fans 252 (252A～252E) respectively.In addition, (top of 242A～242E) is covered with exhaust outlet 242 (the configuration exhaust gas filter mechanism 254 of 242A～242E) at these exhaust outlets 242.
(252A～252E) is by such as being rotated control by DC (direct current) motor, and the DC fan of the rotation number of may command fan constitutes for each ventilating fan 252.Like this, (wind speed of 252A～252E) can be adjusted according to the mode that the down current 280 that makes the air that forms in carrying room 200 forms straight lines by individually adjusting each ventilating fan 252.If the down current 280 that forms in carrying room 200 tilts, flow that it is chaotic to take place, then roll up such as having on the particulate of generation, carrying room 200 in by common transport mechanism 160 attached to the possibility on the wafer W in the conveyance.In the present embodiment,, make the down current 280 of air form straight line, therefore, can prevent such as the such situation of volume on the particulate owing to can adjust.
In addition, (quantity of 252A～252E), five of being not limited to represent as Fig. 5 both can be below four to ventilating fan 252, also can be more than six.Like this, a plurality of ventilating fans 252 are set, can carry out the meticulous adjustment of the air down current 280 on the length direction of carrying room 200 by length direction along carrying room 200.
In addition, in the present embodiment, about when gas supply part 230 places are provided with air supply fan 232, the situation that ventilating fan 252 also is set at exhaust portion 250 places is illustrated, and still, any of air supply fan 232 and ventilating fan 252 can only be set also.If any of air supply fan 232 and ventilating fan 252 is set, be because outer gas is entered in the carrying room 200, can produce air flows, such as the above-mentioned down current 280 of generation.
But, the down current 280 of air as described above, only by air supply fan 232, along with advancing in the below in carrying room 200, confusion might take place in flowing of air, so, as present embodiment, by ventilating fan 252 also being set,, can make the down current 280 of air become straight line more by also giving attraction downwards at exhaust portion 250 places.
In addition, exhaust portion 250 places that represent in Fig. 5 have been arranged on the below of exhaust gas filter mechanism 254 with ventilating fan 252, so, by exhaust gas filter mechanism 254 removed contain Cl, Br gas componants such as gas (as Cl 2, Br 2, HCl, HBr etc.) air by ventilating fan 252.Like this, in the corrosion composition that ventilating fan 252 can not be in the exhaust to be comprised, so, as ventilating fan 252, there is no need to use the ventilating fan of corrosion resistance.Therefore, as ventilating fan 252, can use cheap ventilating fan.But,, be not limited to situation as described above, also ventilating fan 252 can be arranged on the below of exhaust gas filter mechanism 254 as exhaust portion 250.Under these circumstances, as ventilating fan 252, preferably use corrosion resistance.
Exhaust gas filter mechanism 254 such as by discharge filter 256 and freely with dismantling the framework 258 of maintenance discharge filter 256 constitute.Framework 258 is stayed out space 260 below discharge filter 256, keep discharge filter 256.Like this, by (252A～252E) insulating space 260 disposes discharge filter 256, and air is almost entered on whole of discharge filter 256 (256A, 256B) equably from each ventilating fan 252.
In addition, the framework 258 of exhaust gas filter mechanism 254 also can constitute like this: a side or two sides in the end are provided with peristome, can dismantle discharge filter 256 in the longitudinal direction from this peristome with being free to slide.Like this, discharge filter 256 can be easily from framework 258 dismountings, so filter is changed and become easy.
In the case, also discharge filter 256 can be divided into and a plurality ofly constitute.Like this, discharge filter 256 slides from exhaust gas filter mechanism 254, becomes to extract out easily to put into, and therefore, changing becomes is more prone to.In addition, the quantity of discharge filter 256 is many more, can dwindle more to be used for taking out space discharge filter 256, that guarantee from exhaust gas filter mechanism 254 in framework 210.Though the quantity of this discharge filter 256 no matter be divided into several can,, if the quantity of discharge filter 256 is too much, then expend the replacing time on the contrary.
Therefore, space size in the consideration carrying room 200 or replacing time etc., the quantity of discharge filter 256 is preferably made such as about two.In addition, exhaust gas filter mechanism 254 also can directly be installed in discharge filter 256 on framework 210 grades with freely dismantling and constitute.
In addition, the top in above-mentioned exhaust gas filter mechanism 254 becomes the operating personnel and enters the ground of keeping a foothold in the carrying room 200 such as waiting by maintenance, also can install ladder.
As above-mentioned discharge filter 256, be included in such as (242A～242E) harmful components of the airborne harmful components of exhaust are removed the filter formation from exhaust outlet 242 by removing.As harmful components, can enumerate such as the gas componants such as corrosive gas such as gas that contain Cl, Br (as Cl 2, Br 2, HCl, HBr etc.).
As this discharge filter 256, be suitable for such chemical filter: the neutralization reaction of being undertaken by carbonate is chemically adsorbed the harmful components (such as HCl, HBr etc.) of removing in the exhaust to be contained.Remove such as process by this chemical filter with chemical formulation, respectively shown in following chemical formula (2-1), (2-2) as harmful components HCl, HBr.
2HCl+K 2CO 3+H 2O+CO 2→2KCl+2H 2CO 3……(2-1)
2HBr+K 2CO 3+H 2O+CO 2→2KBr+2H 2CO 3……(2-2)
Comprise in the air by this chemical filter such as HCl, HBr, by the reaction of above-listed chemical formula (2-1), (2-2) expression, become potassium chloride (KCl), KBr salt such as (HBr) respectively, attached to the surface of chemical filter, be removed like this.In addition, in case attached to salt such as the potassium chloride on the chemical filter, KBrs, as long as, just can not break away from from chemical filter such as not applying certain energy such as heating.
Here, the formation about chemical filter as described above describes with reference to accompanying drawing.Fig. 6 is the schematic diagram that is used to illustrate the formation of chemical filter, the figure when seeing chemical filter a part of from the top.Chemical filter is such as becoming the duolateral structure that Fig. 6 represents.In this chemical filter, if air passes through downwards from the top of chemical filter, on the side of harmful components such as gas componant of then being contained in the air attached to each constituting body that constitutes the duolateral formation such as the gas that contains Cl, Br, by chemical reaction as described above (such as neutralization reaction of carbonate etc.) takes place, from air, remove such as harmful components such as HCl, HBr.
Therefore, in this chemical filter, the surface area that constitutes each constituting body of duolateral formation is that the area of air contact is big more, and the ability of removing of harmful components is just high more.Therefore, high more such as the height of chemical filter, or thickness is thick more, and then area is big more, and therefore, the ability of removing is also big more.
The height and the thickness of this point restriction part of configuration exhaust gas filter mechanism 254 in carrying room 200.Even under these circumstances, in order to improve the ability of removing (removing efficient) of harmful components as far as possible, also can dwindle the waveform of each constituting body of the duolateral formation that constitutes chemical filter, enlarge entire area.Such as, Fig. 6 (a) and (b) are the figure of the part of the same thickness L of expansion chemical filter.Wherein, will be compared with what to represent among Fig. 6 (a), the diagrammatic representation of having dwindled the ripple of each the constituting body k that constitutes the duolateral formation is Fig. 6 (b).Like this,,, also entire area can be enlarged, therefore, the ability of removing of harmful components can be improved even be same thickness by dwindling the ripple of each the constituting body k that constitutes the duolateral formation.
In addition, the replacing period of the discharge filter 256 of exhaust gas filter mechanism 254, such as, wait the durable time of measuring by experiment, set replacing period in view of the above, it is stored in advance is arranged on such as in the memory of the control part of substrate board treatment 100 etc.Then, such as the service time of measuring discharge filter 256 at above-mentioned control part, after date when reaching above-mentioned replacing is such as also carrying out the processing that expression with notice replacing period is presented at the display part etc. of control part.
In addition, also can be in exhaust gas filter mechanism 254 the life-span transducer in the life-span of installation and measuring discharge filter 256.In the case, such as also can be like this: monitor the life-span transducer at above-mentioned control part, life-span transducer one detects the life-span of discharge filter 256, just carries out the expression in notice replacing period etc. is presented at the processing of the display part etc. of control part.As this life-span transducer, can enumerate comprise in the air that detects in the carrying room 200 such as the transducer of the amount of gas componants such as HCl, HBr etc.In addition, as the life-span transducer, also can be with amount according to gas componants such as HCl, the silica type detection lug that color changes etc. is attached to such as in the exhaust gas filter mechanism 254, and the operating personnel carries out visual observation.
In addition, on the framework 210 of carrying room 200, as shown in Figure 4, be provided for respectively moving into from mounting in the box container on the case platform 132 134 take out of moving into of wafer W take out of mouthfuls 212, be used for and above-mentioned load locking room 560 between move into and take out of moving into of wafer W and take out of mouthfuls 214.Move at these and to take out of on mouthfuls 212,214, the above-mentioned family of power and influence 136,564 is set, sealing and freely openable ground formation respectively.Omitted the family of power and influence 136,564 among Fig. 4.
In addition, on the framework 210 of carrying room 200, as shown in Figure 5, be provided with and be used for taking out of moving into of wafer W and taking out of mouthfuls 216 to moving into as the sour exhaust unit 300 of standby unit.Acid exhaust unit 300 possesses makes the sour exhaust portion 320 for the treatment of unit room 310 and carrying out the exhaust that this substrate treats unit room 310 such as the substrate of the temporary transient standby of moving into from carrying room 200 of wafer W of finishing processing.
Substrate treats that unit room 310 multilayers ground can carry multi-disc and constitute (as 19).Specifically, such as, substrate treat unit room 310 within it portion possess basal disc, be fixed on this basal disc, have the multilayer (as 19 of wafers) that keeps wafer circumference portion and keep many (as four) substrates of ditch to keep pillar and as being arranged on the heater air flow pressure switch rod that this substrate keeps the heating part material of pillar inside.
The blast pipe 322 of acid exhaust portion 320 is such as on the exhaust equipment that is connected the factory that substrate board treatment 100 is set (such as the equipment etc. of removing the evil of clean room).On sour exhaust portion 320, such as the vario valve that is provided for controlling differential pressure or exhaust.By by the vario valve of sour exhaust portion 320 control air displacement, the air displacement of sour exhaust portion 320 is fit to such as the exhaust in the exhaust equipment of the factory of placement substrate processing unit 100 firmly.
Such as the wafer W of returning from processing unit 110 1 side direction carrying rooms 200 by common transport mechanism 160 of finishing processing, before getting back to box container 134, move into the substrate of sour exhaust unit 300 temporarily and treat unit room 310.At this moment, the wafer W of finishing processing remains on plate and keeps being heated to specified temp by heater air flow pressure switch rod on the pillar, and standby is to the process special time.Like this, emit from the wafer W of finishing processing attached to the gas componant of the processing gas on the wafer W of finishing processing.
On the other hand, in the sour exhaust portion 320,, produce substrate is treated the attraction that unit room 310 carries out exhaust by exhaust attraction from the exhaust equipment of the factory that is connected blast pipe 322.Like this, even such as treating that from being accommodated in substrate the wafer W of finishing processing in the unit room 310 emit above-mentioned gas composition (such as HCl, HBr), the exhaust equipment that this gas is also arranged to factory by sour exhaust portion 320.
Thereafter, through behind the special time, such as passing through common transport mechanism 160, wafer W treats that from substrate unit room 310 is removed, and turns back to box container 134.Like this, gas is attached to turning back to box container 134 on the wafer W of finishing processing, therefore, can prevent such as by attached to the inside of the gaseous components from contaminating box container 134 of the corrosive gas on the wafer W of finishing processing or be accommodated in other wafer W in the box container 134 etc.
(the action example of carrying room)
Below, describe about the action example of the carrying room 200 that constitutes as described above.Substrate board treatment 100 is worked at the beginning, and ((252A～252E) just drives running to each air supply fan 232 of the gas supply part 230 of carrying room 200 for 232A～232C) and each air supply fan 252 of exhaust portion 250.So (222A～222C) import in the carrying room 200, (242A～242E) is by forcibly to outside exhaust from exhaust outlet 242 for the air of importing from air supply opening 222 for the air that comes from the outside.Like this, in carrying room 200, form from gas supply part 230, promptly from the down current 280 of courtyard portion (top) air of (bottom) 240 of the framework 210 of carrying room 200 towards the bottom to exhaust portion 250.
In the case, the air from outside (such as the clean room that substrate board treatment 100 is set) comes by the air feed filter mechanism 234 of gas supply part 230, imports in framework 210.Like this, even contain amine composition such as ammonia in the air such as clean room, the air of removing this amine composition by air feed filter mechanism 234 is also imported in carrying room 200.
Like this, owing to do not contain the amine composition in the atmosphere in the carrying room 200, so, such as making by common transport mechanism 160 from load locking room 560 under the wafer W of finishing processing that process chamber is handled turns back to situation carrying room 200 in, can prevent that finishing generation on the wafer W of processing at this results from particulate attached to the gas componant of the processing gas on the above-mentioned wafer of finishing dealing with.
In addition, the air such as importing from clean room in the carrying room 200 by exhaust gas filter mechanism 254 exhausts of exhaust portion 250, returns to clean room once more.Like this, such as when load locking room 560 makes the wafer W of finishing processing turn back in the carrying room 200 by common transport mechanism 1 60, by gas componant attached to the processing gas on the wafer W of finishing processing, even with the wafer W of finishing processing, the processing gas that contains the harmful components such as gas componant that comprise Cl, Br gas enters in the carrying room 200, has removed the air of this harmful components also by the outside exhaust to carrying room 200 by exhaust gas filter mechanism 254.Therefore, can prevent such as the quilt of the air in the carrying room 200 under containing the state of harmful components to the clean room exhaust.
(with the comparison of the carrying room that utilizes sour exhaust apparatus exhaust)
But, as substrate board treatment 100, under the situation that possesses sour exhaust unit 300, about the exhaust of carrying out from carrying room 200, can expect also can all utilizing the sour exhaust portion 320 of sour exhaust unit 300, exhaust equipment (as the equipment of removing the evil of clean room) exhaust to factory.Like this, as present embodiment, will can not to the clean room exhaust from the exhaust of carrying room 200 yet.
Here, with the configuration example of the carrying room that utilizes sour exhaust apparatus exhaust for and comparative example of the present invention, more specifically describe.Configuration example when the carrying room 200 that Fig. 7 represents to utilize 300 pairs of sour exhaust units to represent such as Fig. 5 carries out exhaust.The carrying room 400 that Fig. 7 represents, carrying room 200 as Fig. 5 represents replaces being provided with exhaust portion 250, such as the slightly blast pipe 410 of square tube shape is set on the bottom 240 of framework 210, make the open-ended of this blast pipe 410, be connected on the sour exhaust portion 320 of sour exhaust unit 300.
The carrying room 400 that Fig. 7 represents, the carrying room of representing as Fig. 5 200, replacement is provided with exhaust outlet 242 (242A～242E) on the bottom 240 of framework 210, by top exhaust outlet 412 (412A～412E) is set at blast pipe 410, from this exhaust outlet 412 (412A～412E) pass through blast pipe 410, with the sour exhaust portion 320 of the acid of the air guide in the carrying room 200 exhaust unit 300.
In the carrying room 400 of this formation, the exhaust attraction that exhaust equipment by the factory from the blast pipe 322 of the sour exhaust portion 320 that is connected sour exhaust unit 300 produces, by sour exhaust portion 320, (412A～412E) produces attraction from the exhaust outlet 412 of blast pipe 410.Like this, (412A～412E) be inhaled into is by blast pipe 410, by sour exhaust portion 320, by the exhaust equipment exhaust to factory from exhaust outlet 412 for the air in the carrying room 200.Therefore, even contain harmful components the exhaust of carrying out from carrying room 400, these harmful components can not be discharged in the clean room yet.
; air displacement from carrying room 400; recently the air displacement from the sour exhaust portion 320 of sour exhaust unit 300 is a lot of greatly; so; the carrying room of representing as Fig. 7 400; if whole exhausts that will produce from carrying room 400 are to the exhaust equipment exhaust of factory, then the exhaust equipment to factory produces bigger burden.The air displacement of this carrying room is also different and different according to the disposal ability of substrate board treatment, such as, be 2m from the air displacement of the sour exhaust portion 320 of sour exhaust unit 300 3/ min, then the air displacement from carrying room 400 reaches its roughly 11.5m of six times 3/ min.Therefore, if handle these whole exhausts (such as 13.5m by the exhaust equipment of factory 3/ min), then the burden that the exhaust equipment of factory is applied is also big.
In contrast, the carrying room of representing by the Fig. 5 that relates to present embodiment 200 is about the exhaust in the carrying room 200, because can be from the exhaust outlet 242 (242A～242E) directly exhaust that is arranged on bottom 240, therefore, can alleviate the burden that the exhaust equipment to factory applies significantly.According to above-mentioned example, about the exhaust in the carrying room 200 (such as 11.5m 3/ min), because from directly exhaust of carrying room 200, so the exhaust equipment exhaust to factory only becomes exhaust from the sour exhaust portion 320 of sour exhaust unit 300 (such as 2m 3/ min), the burden that the exhaust equipment of factory is applied reduces significantly.
And, the carrying room of representing by Fig. 5 400, the exhaust portion 250 of the exhaust gas filter mechanism 254 of the harmful components that will have in the exhaust of removing to be comprised is arranged on the bottom 240 of framework 210, therefore, even owing to gas componant attached to the processing gas on the wafer W of finishing processing, comprise harmful components such as corrosion composition in the feasible exhaust from carrying room 200, also remove by exhaust gas filter mechanism 254, therefore, pure air is discharged from from carrying room 200.Like this, though from carrying room 200 such as to the direct exhaust of clean room, can the exhaust of carrying out from carrying room 200, not contain harmful components such as corrosion composition yet and be deflated, therefore, can prevent that the machine material in the clean room from corroding.
In addition,, as described above, do not utilize sour exhaust unit 300 can carry out exhaust by the carrying room 200 that relates to present embodiment, so, also go for not being provided with the substrate board treatment 100 of sour exhaust unit 300.
In addition, sour exhaust portion 320 places at above-mentioned sour exhaust unit 300 also can be provided with ventilating fan and discharge filter as the exhaust portion 250 of present embodiment, by this discharge filter, carry out exhaust from sour exhaust portion 320.By such setting, pass through discharge filter from the exhaust of sour exhaust portion 320, also can remove such as the harmful components as halogen becomes to grade, therefore, the blast pipe 322 with sour exhaust portion 320 is not connected on the exhaust equipment of factory, can be such as to the direct exhaust of clean room.Like this, can alleviate the burden that the exhaust equipment to factory applies more.
In the case, also above-mentioned discharge filter can be arranged on sour exhaust portion 320 such as treating connecting portion one side of unit room 310 with substrate.By such setting, be deflated filter and remove the inside that the air of harmful components enters sour exhaust portion 320, therefore, can not need about the corrosion countermeasure of the inside of sour exhaust portion 320.Like this, such as parts such as the differential pressure pick-up of the inside that is arranged on sour exhaust portion 320 or vario valve, also can use cheap.
In addition, in the present embodiment, about exhaust gas filter mechanism 254 being set in exhaust portion 250, simultaneously, the situation that air feed filter mechanism 234 also is set at gas supply part 230 places is illustrated, still, might not be confined to this, the exhaust gas filter mechanism 254 of exhaust portion 250 also can only be set.This is because if in exhaust portion 250 exhaust gas filter mechanism 254 is set at least, then can prevent to be deflated such as the air that contains the harmful gas componant such just like halogen gas by attached to the gas on the wafer W of finishing processing.
But, if air feed filter mechanism 234 also is set, then can prevent to finish producing on the wafer W of processing by attached to the gas on the wafer W of finishing processing, the particulate that causes such as the ammonia composition at this at gas supply part 230 places.Like this, by further combined air supply filter mechanism 234 in exhaust gas filter mechanism 254, it is perfectly safe to make attached to the gas countermeasure on the wafer W of finishing processing.
(other configuration examples of substrate board treatment)
Below, other configuration examples about the substrate board treatment that relates to embodiments of the present invention describe with reference to accompanying drawing.Such as, the invention is not restricted to the substrate board treatment 100 that Fig. 1 represents, can be applicable to all substrate board treatments.Fig. 8 represents that the summary that constitutes the substrate board treatment of vacuum treatment unit with many containers constitutes.
The substrate board treatment 500 that Fig. 8 represents possesses: have for substrate carry out the vacuum treatment unit 510 of a plurality of process chambers 540 of various processing such as film forming processing, etch processes such as wafer W, for this vacuum treatment unit 510, move into the conveyance unit 120 of taking out of wafer W.The formation of conveyance unit 120 because and Fig. 1 much at one, so about having the component part that same function constitutes in fact, by giving prosign, omission repeat specification.
The conveyance unit 120 that Fig. 8 represents is for constituting the example that is configured in the common transport mechanism (atmospheric side transport mechanism) 160 in the carrying room 200 to possess a single armed mechanism of picking up portion.The base station 162 of fixing common transport mechanism 160, on the guide rail (not shown) that is provided with along its length, slidably supported movably at the central part of carrying room 200.On this base station 162 and guide rail, be respectively arranged with the moving element of linear motor and decide element together.Be provided with the linear motor driven mechanism (not shown) that is used to drive this linear motor in the end of guide rail.On linear motor drive mechanism, connecting control part (not shown).Like this, according to the control signal of sending from control part, linear motor driven mechanism drives, and common transport mechanism 160 and base station 162 move to the direction of arrow along guide rail together.
Among Fig. 8, expression will be configured in the side of carrying device 520 such as the vacuum treatment unit 510 with six process chamber 540A～540F.Vacuum treatment unit 510 possesses to six process chamber 540A～540F moves into the common carrying room 550 of taking out of wafer, around this common carrying room 550, respectively by family of power and influence 544A～544F configuration chambers 540A～540F.In this common carrying room 550, respectively by family of power and influence 554M, but first, second load locking room 560M of 554N configuration vacuum attraction, 560N.These first, second load locking rooms 560M, 560N are connected on the side of carrying room 200 by family of power and influence 564M, 564N respectively.
Like this, between above-mentioned common carrying room 550 and above-mentioned six the chambers 540A～540F and between above-mentioned common carrying room 550 and above-mentioned each load locking room 560M, 560N, salable respectively and switching ground constitutes, and is grouped tool, as required and common carrying room 550 can be communicated with.In addition, also sealably open and close respectively between above-mentioned first and second each load locking room 560M, 560N and the above-mentioned carrying room 200.
Above-mentioned chambers 540A～540F handles such as implementing processing of the same race or mutually different xenogenesis for wafer W.Manage chamber 540A throughout, be respectively arranged with the mounting table 542A～542F that is used for the mounting wafer W in the 540B.
Above-mentioned load locking room 560M, 560N have in the interim wafer W that keeps, and carry out after pressure adjusts, and push down the function of one deck to.Above-mentioned load locking room 560M, 560N also can further have cooling body or heating arrangements.
In common carrying room 550, be provided with by such as the transport mechanism (inlet side transport mechanism) 570 that can bend and stretch, lifting, the multi-joint arm that constitutes rotatably constitute.This transport mechanism 570 rotatably is supported on the base station 572.Base station 572 constitutes like this: by such as arm mechanism 576, on the guide rail 574 that is provided with from the base end side in the common carrying room 550 to front, be free to slide.
According to the transport mechanism 570 of such formation, mobile by transport mechanism 570 is slided along guide rail 574, can enter each load locking room 560M, 560N and chambers 540A～540F.Such as, when entering process chamber 540A, the 540F of above-mentioned each load locking room 560M, 560N and configuration relatively, make transport mechanism 570 be positioned at cardinal extremity one side of close common carrying room 550 along guide rail 574.
In addition, when entering above-mentioned six process chamber 540B～540E, make transport mechanism 570 be positioned at front end one side near common carrying room 550 along guide rail 574.Like this, by individual transport mechanism 570, can enter all load locking room 560M, the 560N or the chambers 540A～540F that are connected on the common carrying room 550.Transport mechanism 570 has two and picks up portion, once can handle two wafer.
In addition, the formation of transport mechanism 570 is not limited to above-mentioned formation, also can constitute by two transport mechanisms.Such as also can near the cardinal extremity one side setting of common carrying room 550 by can bend and stretch, in first transport mechanism that lifting, the multi-joint arm that constitutes rotatably constitute, near the front end one side setting of common carrying room 550 by second transport mechanism that can bend and stretch, lifting, the multi-joint arm that constitutes rotatably constitute.In addition, the portion of the picking up quantity of above-mentioned transport mechanism 570 is not limited to two, also can be such as only having one.
The carrying room 200 of the substrate board treatment of representing about Fig. 8 500 also can be suitable for the formation that Fig. 5 represents.Like this, the substrate board treatment 500 of the type of representing about Fig. 8 also can play the same effect of substrate board treatment 100 of the type of representing with Fig. 1.
In addition, the quantity of the process chamber 540 in the substrate board treatment 500, six of being not limited to represent as Fig. 8 both can be below five, also can further append setting.In addition, in the vacuum treatment unit 510 that Fig. 8 represents, about the process chamber unit that connects a plurality of process chambers around a common carrying room 550 is that one situation is illustrated, but, might not be limited to this, also can make such formation: around a common carrying room 550, connect the process chamber unit connected a plurality of process chambers more than two, the formation of so-called tandem type by surge chamber.
More than, with reference to accompanying drawing, be illustrated about suitable execution mode of the present invention, still, much less, the invention is not restricted to described example.Clearly, if industry personnel in the category in being recorded in the claim scope, can expect various modifications or revise example that those are considered to also belong to technical scope of the present invention certainly.
Such as, in the above-mentioned execution mode, be arranged on the situation of the carrying room of substrate board treatment about the exhaust portion that will possess the discharge filter of removing the pernicious gas composition that halogen gas that corrosive gas etc. contains becomes to grade, be illustrated, but, might not be limited to this, also go for the load locking room (such as load locking room 150A, 150B that Fig. 1 represents, load locking room 560M, 560N etc. that Fig. 8 represents) of substrate board treatment.
In the load locking room in being arranged on substrate board treatment, such as be connected the vacuum pump that is used to carry out the indoor vacuum exhaust of load-lock etc. on vacuum exhaust portion different, the sour exhaust portion of carrying out the indoor sour exhaust of load-lock is set in addition.The sour blast pipe of this acid exhaust portion is connected on the exhaust equipment of factory.In this load locking room, valve control by above-mentioned each blast pipe, on carrying out attached to the wafer of finishing dealing with specific opportunity, enter the exhaust (sour exhaust) of the gas componant (such as, halogen gas compositions such as HCl, HBr) of the processing gas in the load locking room.Therefore, even in this load locking room, by being arranged on the exhaust portion that possesses discharge filter and ventilating fan on the sour blast pipe, the exhaust that can go out, remove the harmful components of the gas componant etc. of corrosive gas from sour blast pipe exhaust by load locking room.Like this, can be not the sour blast pipe of load locking room be connected on the exhaust equipment of factory, carries out exhaust at that, therefore, can alleviate the burden of the exhaust equipment of factory.
In addition, in the above-mentioned execution mode, about being illustrated, still such as possessing the situation that gas supply part except that the gas supply filter of amine compositions such as deammoniation is arranged on the carrying room of substrate board treatment, might not be confined to this, also go for the load locking room of substrate board treatment.
Load-lock in being arranged on substrate board treatment is indoor, such as in order to carry out atmosphere opening, is provided with the connected entrance that is communicated with outer gas (such as clean room).Like this, it is indoor that the air that contains amine compositions such as ammonia might enter load-lock from connected entrance, so, such as might be in load locking room attached to the gas componant of the processing gas on the wafer of finishing dealing with enter the indoor reactions such as ammonia of load-lock, on the wafer of finishing dealing with, produce particulate.Therefore, even in the connected entrance of this load locking room, by being provided with such as the gas supply part that possesses except that the gas supply filter of amine compositions such as deammoniation, from the air that the connected entrance by load locking room imports, also can remove the amine composition, therefore, can prevent from the wafer of finishing dealing with, to produce the particulate that produces because of the gas that adheres to.
In addition, except the substrate board treatment of above-mentioned execution mode, the present invention also goes for various substrate board treatments.As other substrate board treatments, such as also going for vertical thermal processing apparatus, coating display etc.
(practicality on the industry)
The present invention goes for possessing the outer gas of importing, the carrying room and the load-lock that carry out exhaust The substrate board treatment of chamber etc.

Claims (14)

1. a substrate board treatment is characterized in that,
Possess: be used for processed substrate is implemented the processing unit of particular procedure and moved into the carrying room of taking out of processed substrate to this processing unit,
Described carrying room possesses:
The gas supply part of gas outside in described carrying room, importing;
Relatively be provided with described gas supply part, to carrying out the exhaust portion of exhaust in the described carrying room; Be arranged on described exhaust portion, the exhaust gas filter mechanism that described exhaust is filtered,
Described exhaust portion is made of the direct current fan of the rotation number that can control fan,
Described direct current fan is arranged on the downstream of described exhaust gas filter mechanism, and this direct current fan separates the space with described exhaust gas filter mechanism.
2. substrate board treatment as claimed in claim 1 is characterized in that,
Described exhaust gas filter mechanism removes filter by the harmful components of removing the harmful components that contain in the described exhaust at least and constitutes.
3. substrate board treatment as claimed in claim 1 is characterized in that,
Described exhaust gas filter mechanism is made by chemical filter or active carbon filter.
4. substrate board treatment as claimed in claim 1 is characterized in that,
Described gas supply part possesses the air feed filter mechanism that the outer gas that imports in the described carrying room is filtered.
5. substrate board treatment as claimed in claim 4 is characterized in that,
Described air feed filter mechanism is removed filter by the amine composition of removing the amine composition that outer gas contained in the described carrying room of importing at least and is constituted.
6. substrate board treatment as claimed in claim 4 is characterized in that,
Described air feed filter mechanism is made by chemical filter or active carbon filter.
7. substrate board treatment as claimed in claim 4 is characterized in that,
Described air feed filter mechanism possesses to be removed the particle that the amine composition that imports the amine composition that outer gas contained in the described carrying room removes filter and remove the particle that is contained in the outer gas that imports in the described carrying room at least and removes filter.
8. a substrate board treatment is characterized in that,
Possess: be used for processed substrate is implemented the processing unit of particular procedure and moved into the carrying room of taking out of processed substrate by load locking room to this processing unit,
Described load locking room possesses:
The gas supply part of gas outside the indoor importing of described load-lock;
Carry out the sour exhaust portion of the indoor sour exhaust of described load-lock; With
Be arranged on described sour exhaust portion, the exhaust gas filter mechanism that described sour exhaust is filtered,
Described sour exhaust portion is made of the direct current fan of the rotation number that can control fan,
Described direct current fan is arranged on the downstream of described exhaust gas filter mechanism, and this direct current fan separates the space with described exhaust gas filter mechanism.
9. substrate board treatment as claimed in claim 8 is characterized in that,
Described exhaust gas filter mechanism removes filter by the harmful components of removing the harmful components that contained in the described exhaust at least and constitutes.
10. substrate board treatment as claimed in claim 8 is characterized in that,
The gas supply part of described load locking room possesses importing the air feed filter mechanism that the indoor outer gas of described load-lock filters.
11. substrate board treatment as claimed in claim 10 is characterized in that,
Described air feed filter mechanism is removed filter by the amine composition of removing the amine composition that is contained in the indoor outer gas of the described load-lock of importing at least and is constituted.
12. a substrate board treatment is characterized in that,
Possess: be used for processed substrate is implemented the processing unit of particular procedure and moved into the carrying room of taking out of processed substrate to this processing unit,
Also possess:
The standby unit that is connected with described carrying room, described standby unit have the sour exhaust portion that the substrate that makes the interim standby of processed substrate by described processing unit processes is treated unit room and carried out the sour exhaust that this substrate treats unit room; And
Be arranged on the sour exhaust portion of described standby unit, the exhaust gas filter mechanism that described sour exhaust is filtered,
Described sour exhaust portion is made of the direct current fan of the rotation number that can control fan,
Described direct current fan is arranged on the downstream of described exhaust gas filter mechanism, and this direct current fan separates the space with described exhaust gas filter mechanism.
13. substrate board treatment as claimed in claim 12 is characterized in that,
Described exhaust gas filter mechanism removes filter by the harmful components of removing the harmful components that contain in the described exhaust at least and constitutes.
14. substrate board treatment as claimed in claim 13 is characterized in that,
On described carrying room, be connected with the definite position determining means in position that is used to carry out described processed substrate,
Described standby configuration of cells is under described position determining means.
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JP4744175B2 (en) 2011-08-10

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