WO2005104220A1 - Clean tunnel in single wafer processing system - Google Patents

Clean tunnel in single wafer processing system Download PDF

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Publication number
WO2005104220A1
WO2005104220A1 PCT/JP2004/004489 JP2004004489W WO2005104220A1 WO 2005104220 A1 WO2005104220 A1 WO 2005104220A1 JP 2004004489 W JP2004004489 W JP 2004004489W WO 2005104220 A1 WO2005104220 A1 WO 2005104220A1
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WO
WIPO (PCT)
Prior art keywords
area
clean
region
efem
tunnel
Prior art date
Application number
PCT/JP2004/004489
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French (fr)
Japanese (ja)
Inventor
Osamu Shinohara
Original Assignee
Daiichi Institution Industry Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Daiichi Institution Industry Co., Ltd. filed Critical Daiichi Institution Industry Co., Ltd.
Priority to PCT/JP2004/004489 priority Critical patent/WO2005104220A1/en
Publication of WO2005104220A1 publication Critical patent/WO2005104220A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

Definitions

  • the present invention uses a conventional FOUP (closed box) for supplying and recovering wafers to and from a manufacturing apparatus using a cassette containing 25 sheets.
  • Clean tunnel document that forms part of a single wafer processing system that has been changed to single wafer processing
  • PCT / JP02Z05939 provides a system that links manufacturing equipment by a single unit by continuously transferring wafers and other workpieces (workpieces) in a very small clean area. ing.
  • production efficiency can be increased by using single wafers for wafer transport in response to the increase in the size of semiconductor wafers. Thoroughly clean lean tunnels.
  • an object of the present invention is to provide a clean tunnel that takes measures to prevent the clean tunnel from being contaminated by gas, particles, or the like from a manufacturing apparatus or the like in a single-wafer processing system. Disclosure of the invention
  • the present invention includes a clean room area, and an area partitioned from the clean room area and divided into a clean tunnel area, an EFEM area, and a manufacturing apparatus area.
  • the clean tunnel region is adjacent to the EFEM region
  • the EFEM region is adjacent to the manufacturing device region
  • the EFEM region is set to a lower pressure than the manufacturing device region and the clean tunnel region.
  • a air curtain for preventing gas, particles, and the like flowing from the manufacturing apparatus area into the EFEM area from contaminating the clean tunnel area.
  • a tunnel for preventing gas, particles, and the like flowing from the manufacturing apparatus area into the EFEM area from contaminating the clean tunnel area.
  • the air curtain is a clean tunnel characterized by being formed by a cassette type fan device.
  • the fan device is provided with a guide portion for guiding air toward the HEPA filter installed between the clean room region and the clean tunnel region or the EFEM region. It is a clean tunnel featuring this feature.
  • the filter also serves as an air curtain filter
  • the clean tunnel is characterized by this.
  • the present invention discloses a configuration example of a work piece processing system as a representative of a semiconductor manufacturing process
  • the present invention can also be applied to a liquid crystal device manufacturing process as described above.
  • the work according to the present invention is not limited to a semiconductor wafer, but also includes a display substrate, a magnetic hard disk, and the like.
  • FIG. 1 is a plan view showing the schematic configuration of a single-wafer processing system
  • Fig. 2 is a front view of the system
  • Fig. 3 is a detailed cross-sectional view of a roller-type single-wafer conveyor and a robot constituting the system
  • Fig. 4 is a detailed plan view of the single-wafer conveyor and robot
  • Fig. 5 is a front cross-sectional view of the main part of the system
  • Fig. 6 is a plan view of the main part of the system
  • Fig. 7 is used for the system.
  • FIG. 3 is a diagram illustrating a configuration example of a filter unit to be used.
  • the workpiece single-wafer processing system uses a FOUP or a cassette (hereinafter referred to as FOUP, which is conveyed by the inter-process conveying means, and is denoted by 1). )
  • FOUP a cassette
  • F ⁇ UP 1 F ⁇ UP 1
  • the wafer 2 in the FOUP 1 can be made into a single wafer by the lopot 40.
  • a buffer station 41 for temporarily storing the actual empty FOUP is incorporated into the FOUP 1, and the buffer station 41 is connected to the small patch transporter 8.
  • the EFEM 6 has a wafer transfer lo-port 60, a par code and alphanumeric reading device 61 (not shown), a buffer set for automatic operation 62, and a FOUP 63 for manual operation. ⁇ ⁇ A FOUP opener 64 (not shown) is provided, and the clean area is connected by a clean tunnel 7 (shaded area in Fig. 1).
  • the clean tunnel 7 only needs to be able to form the minimum necessary space in which the single wafer conveyor 3 can transfer the single wafer 2.
  • the inside of the clean tunnel 7 is kept extremely clean, and the atmosphere outside the tunnel, that is, the atmosphere in the worker area (clean room area) is almost completely shut off.
  • the single-wafer conveyor 3 has a loop shape and is of a continuous running type driven by a conveyor belt.
  • the single-wafer conveyor body 3 is driven so that dust generated by the driving does not affect the cleanness in the clean tunnel 7.
  • the lower part of 6 is connected to the exhaust duct via the exhaust fan and the air filter 37.
  • the single-wafer conveyor 3 includes a drive roller 30a and a drive roller 30a inside a conveyor body 36. Driven. It may be provided with a let 30b and a lift-type stopper 30c for stopping the knurl 30b at a predetermined position.
  • a fan 33 on which the wafer 2 is mounted is fixed to the pallet 30b at regular intervals, and a base end of the fan 33 is formed on a top surface of the conveyor body 36. Can move along gap 3 6a It has become.
  • a holder 33 a for minimizing contact with the wafer 2 is attached to the finger 33, and only the outer peripheral edge of the wafer 2 is held.
  • the robot node 60 b of the robot 60 has a holding portion 60 a for holding only the outer peripheral edge of the wafer 2, and the mouth port 60 is connected to the wafer conveyor 3 via the wafer 3. 2 is scooped and transferred between the manufacturing equipment 50-54, the knocker cassette 62, and the FOUP 63.
  • a device that forms layers such as wiring and insulating films on a wafer a device that applies a resist, exposes and develops to form a resist pattern on the wafer, and a wafer It consists of a device that etches unnecessary parts of the wafer, a device that implants ions into the wafer, a device that removes the resist, a cleaning device between each process, an inspection device, etc. Are connected.
  • the semiconductor manufacturing apparatuses 50 to 54 are in the respective manufacturing apparatus areas 5A, and the EFEMs 6 are in the respective EFEMs.
  • the clean tunnel 7 is provided in the clean tunnel area 7A.
  • the area 5A, the areas 6A and 7A are each substantially closed, and are also substantially closed with respect to the clean room area C.
  • the manufacturing apparatus area 5A is adjacent to the EFEM area 6A, and an opening 9A for transferring the wafer 2 is formed between the two areas.
  • the opening 9A is located on the manufacturing apparatus area 5A side of the opening 9A. Is a load lock 5 OA C Delivery port is provided.
  • the EFEM area 6A is adjacent to the manufacturing apparatus area 5A and adjacent to the clean room area C, and an air cleaning section F1 is formed between the two areas 6A and C.
  • the air purifying section F 1 is provided with a sealing material F 10 defining the EFEM area 6 A from the clean room area C, and is attached to the sealing material F 10 and has a A fan unit F11 for taking in air, a HEPA filter F12 for purifying the air taken in by this fan unit F11, and a fan unit F13 for forming an air curtain installed as necessary Consists of
  • the HEPA filter F12 forms the upper part of the EFE region 6A, and a chemical filter corresponding to, for example, an acid, a dry etch, a CVD, or a diffusion organic gas at the time of etching can be provided.
  • the fan device F13 accommodates a fan and its driving unit, and forms an air intake F130a and an air discharge port (not shown).
  • Body F13 a guide F131, which guides the air from the air discharge port downward, and a flange formed between the guide F131, and the body F130. It consists of a part F 1 32.
  • Such a fan device F13 is provided on the peripheral surface of the hole F100 of the sealing material F10, which is cut out to a size in which the guide portion F131 can be placed. 32 is locked, and it is arranged detachably.
  • the height of the guide portion F131 which is formed in a cylindrical shape, is provided such that the front end opening F1311a is substantially in contact with the HEPA filter F12.
  • an air curtain guide F 1 33 is provided below the tip opening F 13 1 a with the HEPA filter F 12 interposed therebetween, as shown in FIG.
  • the air that has been installed and has been cleaned through the HEPA filter F12 from the tip opening F13a forms an air curtain F1334 for the opening 9A.
  • the fan device F13 for forming the air curtain F134 is installed as necessary as described above, for the following reason.
  • Some of the manufacturing apparatuses 50 to 54 generate substances that are harmful to the production, and some of them do not. It is not necessary to apply an air curtain to the production apparatuses that do not generate such substances. Keep the lid on.
  • the arrangement of the manufacturing apparatus may be changed or the model may be changed. If it becomes necessary to apply an air curtain, the lid of the hole F100 is removed, and the fan device F is removed. Just set 1 and 3. Therefore, the fan unit F13 may be set as needed in accordance with the manufacturing apparatus to be installed, so that the system is highly economical, has a high flexibility, and can be manufactured in a short time. Can be changed.
  • the tip opening F13a of the guide F13 of the fan device F13 comes into contact with the HEPA filter F12 so that the fan device F13 moves the fan device F13 inside the EFEM. Installation is easier than if it is installed inside.
  • the drive source of the air purifying section F1 is provided outside the EFEM area 6A, maintenance of the drive source such as a motor can be performed from outside the EFEM area 6A, and the maintenance of the drive source can be performed. In this case, particles can be avoided. Further, the installation space and arrangement of the fan finette unit (FFU) in the EFEM area 6A are not required, and the possibility of dust generation from the FFU can be reduced to zero. Since the HEPA filter F12 also serves as a filter for the air curtain F133 or F134, it does not need to touch the HEPA filter 12 according to the model change of manufacturing equipment. The installation and removal of the air curtain can be performed quickly and freely.
  • the fan device F13 has a guide portion F131, which is formed as shown in FIG. 7 (B). However, as shown in FIG. 7 (B), a tubular portion F13 corresponding to the guide portion F131 is formed. 1 3 6. may be installed in the air purification section F 1.
  • the clean tunnel region 7A is adjacent to the EFEM region 6A, and an opening 9B for transferring the wafer 2 is formed between the two regions 7A and 6A.
  • the region 7A is adjacent to the tarn room region C, and an air cleaning portion F2 is formed between both regions 7A and C.
  • the air purifying section F 2 is formed substantially in the same manner as the air purifying section F 1, and includes a sealing member F 20, a fan device F 21 attached to the sealing member F 20, and a fan device F 2 1 HEPA filter F22 for purifying the air taken in by the system, and fan unit F23 for forming the air curtain, which is installed as necessary.
  • the air curtain is located in the clean tunnel area 7A. Guides F1 3 3 are installed, and An air curtain F 1 34 is formed.
  • the air purifying unit F2 has substantially the same operation and effect as the air purifying unit F1.
  • the pressure P e of the EFEM area 6 A is set to a value lower than that of the manufacturing equipment area 5 A and the clean tunnel area 7 A, and the pressure P r of the clean room area C is Set to a value lower than EF EM area 6 A.
  • the air moves from the clean tunnel region toward the EF EM region 6A due to the setting of the atmospheric pressure, and moves from the EF EM region 6A to the clean tunnel region 7A. Does not occur.
  • the clean room air of about class 1,000 to 10,000,000 has a class 1 air pressure. It is also possible to prevent intrusion into the EF EM region 6A.
  • the configuration example is disclosed by representing the present invention as a semiconductor manufacturing process, but the present invention can be applied to other work manufacturing processes, for example, a liquid crystal manufacturing process. Applicable to the 6th generation (1500 mm Xl 800 mm), which has a larger substrate size, and the 7th generation (1800 mm X 200 mm) above it .

Abstract

A single wafer processing system comprises a station (4) for feeding a single wafer (2) from an FOUP (1) on a single wafer conveyor (3) and collecting the single wafer (2) from the single wafer conveyor (3) into the FOUP, an EFEM (6) disposed in front of production units (50-54), a clean tunnel (7) for making a clean region common to the EFEM (6) and the station (4), and the single wafer conveyor (3) for conveying the wafer (2) in the clean tunnel (7). Air curtains F133 and F134 are formed in order to protect a clean tunnel region (7A) against contamination due to gases, particles, and the like, flowing into an EFEM region (6A) from a production unit region (5A).

Description

ワークの枚葉処理システムにおけるク リーン ト ンネル 技術分野 Clean tunnel in single wafer processing system
この発明は、 例えば半導体製造工程において、 従来、 製造装置へ のウェハの供給及ぴ回収を、明通常 2 5枚入り のカセッ トゃ F O U P (密閉ボックス） を使用して行われていたものを、 ウェハの枚葉処 理に改めた枚葉処理システムの一部を構成するク リ ーン ト ンネル 書  For example, in the semiconductor manufacturing process, the present invention uses a conventional FOUP (closed box) for supplying and recovering wafers to and from a manufacturing apparatus using a cassette containing 25 sheets. Clean tunnel document that forms part of a single wafer processing system that has been changed to single wafer processing
に関するものである。 背景技術 It is about. Background art
ウェハ等のワーク （加工対象物） を極小ク リーン域で枚葉連続搬 送することによって、製造装置間をワーク単体で結びつけるシステ ムが、 P C T/ J P 0 2 Z 0 5 9 3 9 において提供されている。  PCT / JP02Z05939 provides a system that links manufacturing equipment by a single unit by continuously transferring wafers and other workpieces (workpieces) in a very small clean area. ing.
この枚葉処理システムでは、半導体ウェハの大型化に対応させた ウェハ搬送の枚葉化によって生産効率を上げることができるが、そ の具体的なシステムの構築に際して、解決すべき課題の 1 はタ リー ン ト ンネルのク リ ーン化の徹底である。  In this single-wafer processing system, production efficiency can be increased by using single wafers for wafer transport in response to the increase in the size of semiconductor wafers. Thoroughly clean lean tunnels.
即ち、 製造装置によっては、 処理過程において外に漏れると有害 な物質を使用しているため、 これらの物質を含むガスやパーテイ ク ルをク リーン ト ンネルに侵入させない対策が不可欠になる。  In other words, some manufacturing equipment uses substances that are harmful if they leak out during the treatment process. Therefore, it is essential to take measures to prevent gas and particles containing these substances from entering the clean tunnel.
そのための 1つの手段と して、 エアカーテンがある。  One way to do this is with air curtains.
し力 し、従来のエアカーテンは E F E M (Equipment Front End Module) 内にファ ン、 ファ ン駆動部、 H E P Aフィルタをユニッ ト と して設置していた。 そのため、 E F E Mという清浄度の高い区域に駆動源を持ち込む こ と、狭い E F E M内にク リ ーン対策のためのスペースを要するこ と等が問題となっていた。 また、 エアカーテンの取付や取付後のメ ンテナンスが煩雑であるという難点があった。 However, conventional air curtains have installed a fan, fan drive, and HEPA filter as a unit in an EFEM (Equipment Front End Module). Therefore, there were problems such as bringing the drive source into the EFEM, a highly clean area, and requiring a space for clean measures in the narrow EFEM. Another problem is that the installation and maintenance of the air curtain after installation is complicated.
そこで、 本発明は、 枚葉処理システムにおいて製造装置等からの ガス、パーティクル等によつてク リーントンネルが汚染されない対 策を施したク リーン トンネルを提供するこ とを目的とする。 発明の開示  Therefore, an object of the present invention is to provide a clean tunnel that takes measures to prevent the clean tunnel from being contaminated by gas, particles, or the like from a manufacturing apparatus or the like in a single-wafer processing system. Disclosure of the invention
上記課題を解決するため、 本発明はク リーンルーム領域と、 この ク リーンルーム領域から区画される と共にク リーン ト ンネル領域、 E F E M領域及ぴ製造装置領域とにそれぞれ区画される領域を備 え、 前記ク リーン トンネル領域は前記 E F E M領域に隣接し、 前記 E F E M領域は前記製造装置領域に隣接すると共に、前記 E F E M 領域を前記製造装置領域及び前記ク リーン ト ンネル領域よ り も低 い気圧に設定し、 かつ、 前記製造装置領域から前記 E F E M領域に 流入するガス、 パーティクル等が、 前記ク リーン トンネル領域を汚 染するこ とを防ぐためのエアカーテンを形成したこ とを特徴とす る ク リ ーン ト ンネルと した。  In order to solve the above-described problems, the present invention includes a clean room area, and an area partitioned from the clean room area and divided into a clean tunnel area, an EFEM area, and a manufacturing apparatus area. The clean tunnel region is adjacent to the EFEM region, the EFEM region is adjacent to the manufacturing device region, and the EFEM region is set to a lower pressure than the manufacturing device region and the clean tunnel region. And a air curtain for preventing gas, particles, and the like flowing from the manufacturing apparatus area into the EFEM area from contaminating the clean tunnel area. And a tunnel.
また、 前記エアカーテンは、 カセッ ト式のファ ン装置によ り形成 されるこ とを特徴とするク リーントンネルと した。  Further, the air curtain is a clean tunnel characterized by being formed by a cassette type fan device.
また、 前記フ ァ ン装置には、 前記ク リーンルーム領域と前記ク リ ーン ト ンネル領域又は前記 E F E M領域間に設置された H E P A フィルタに向けて、エアを導く ガイ ド部が設けられていることを特 徴とするク リーン ト ンネルと した。  Further, the fan device is provided with a guide portion for guiding air toward the HEPA filter installed between the clean room region and the clean tunnel region or the EFEM region. It is a clean tunnel featuring this feature.
前記フィルタは、エアカーテン用のフィルタを兼用していること を特徴とするク リーン ト ンネルと した。 The filter also serves as an air curtain filter The clean tunnel is characterized by this.
本発明は、 ワーク枚葉処理システムを半導体製造工程に代表させ て、 その構成例を開示するが、 上述の通り液晶ディバイス製造工程 等においても適用できる。  Although the present invention discloses a configuration example of a work piece processing system as a representative of a semiconductor manufacturing process, the present invention can also be applied to a liquid crystal device manufacturing process as described above.
よって、本発明に係るワークは半導体ウェハに限られるものでは なく 、 ディスプレイ用基板、 磁気ハー ドディスク等も含まれる。 図面の簡単な説明  Therefore, the work according to the present invention is not limited to a semiconductor wafer, but also includes a display substrate, a magnetic hard disk, and the like. Brief Description of Drawings
第 1図はワーク枚葉処理システムの概要構成を示す平面図、第 2 図は同システムの正面図、第 3図は同システムを構成するローラー 式枚葉コ ンペャと ロボッ ト の詳細断面図、第 4図は同枚葉コ ンペャ と ロボッ トの詳細平面図、 第 5図は同システムの要部正面断面図、 第 6図は同システムの要部平面図、第 7図は同システムに用いられ るフィルタ部の構成例図である。 発明を実施するための最良の形態  Fig. 1 is a plan view showing the schematic configuration of a single-wafer processing system, Fig. 2 is a front view of the system, Fig. 3 is a detailed cross-sectional view of a roller-type single-wafer conveyor and a robot constituting the system, Fig. 4 is a detailed plan view of the single-wafer conveyor and robot, Fig. 5 is a front cross-sectional view of the main part of the system, Fig. 6 is a plan view of the main part of the system, and Fig. 7 is used for the system. FIG. 3 is a diagram illustrating a configuration example of a filter unit to be used. BEST MODE FOR CARRYING OUT THE INVENTION
ワーク枚葉処理システムは、 第 1 図及ぴ第 2図に示したよ うに、 工程間搬送手段によ り搬送される F OU Pやカセッ ト （以下、 F O U Pに代表させ、 また符号は 1 とする）から半導体ウェハ 2を枚葉 単位で B a y内に供給したり、処理が終了した枚葉単位のウェハ 2 を F〇 U P 1 に詰替えする詰替えステーショ ン（以下、 単にステー シヨ ン という） 4 と、 半導体製造装置 5 0〜 5 4の前に設けられた E F EM 6 と、 ク リーン ト ンネル 7 と、 このク リーン ト ンネル 7内 でウェハ 2を連続搬送する枚葉コ ンペャ 3 とからなっている。  As shown in Fig. 1 and Fig. 2, the workpiece single-wafer processing system uses a FOUP or a cassette (hereinafter referred to as FOUP, which is conveyed by the inter-process conveying means, and is denoted by 1). ) To supply semiconductor wafers 2 to the Bay in single-wafer units, or to refill wafers 2 in single-wafer units that have been processed to F〇UP 1 (hereinafter simply referred to as “station”). 4, an EF EM 6 provided in front of the semiconductor manufacturing apparatuses 50 to 54, a clean tunnel 7, and a single-wafer conveyor 3 for continuously transporting the wafer 2 in the clean tunnel 7. Has become.
ウェハ枚葉単位と F O U P単位の接点であるステーシ ョ ン 4で は、 ロポッ ト 4 0によって F O U P 1 内のウェハ 2を枚葉にしたり F O U P 1 に詰めたりするが、実空 F O U Pを仮収納するバッ フ ァ ーステーショ ン 4 1 が組み込まれており 、ノ ッファーステーショ ン 4 1 は小パッチ搬送機 8に繋がっている。 At station 4, which is a contact point between the wafer wafer unit and the FOUP unit, the wafer 2 in the FOUP 1 can be made into a single wafer by the lopot 40. A buffer station 41 for temporarily storing the actual empty FOUP is incorporated into the FOUP 1, and the buffer station 41 is connected to the small patch transporter 8.
E F E M 6 はウェハ移載用ロポッ ト 6 0 と、 パーコー ド、 英数字 の読み取り機器 6 1 (図示せず）と、 自動運転用バッフ ァ一力セッ ト 6 2 と、マニュアル運転用 F O U P 6 3及ぴ F O U Pオープナー 6 4 (図示せず）とを備え、 ク リーン トンネル 7でク リーン域を接続し ている （第 1 図斜線部）。  The EFEM 6 has a wafer transfer lo-port 60, a par code and alphanumeric reading device 61 (not shown), a buffer set for automatic operation 62, and a FOUP 63 for manual operation.備 え A FOUP opener 64 (not shown) is provided, and the clean area is connected by a clean tunnel 7 (shaded area in Fig. 1).
ク リ ーン ト ンネル 7は枚葉コンペャ 3 によ り枚葉のウェハ 2 を 搬送できる、 必要最少限のスペースを形成できればよい。 ク リーン ト ンネル 7 の内部は、 極めて清浄な状態に維持され、 トンネル外部 の雰囲気、すなわち作業者エリア（ク リーンルーム領域）の雰囲気と は略完全に遮断されている。  The clean tunnel 7 only needs to be able to form the minimum necessary space in which the single wafer conveyor 3 can transfer the single wafer 2. The inside of the clean tunnel 7 is kept extremely clean, and the atmosphere outside the tunnel, that is, the atmosphere in the worker area (clean room area) is almost completely shut off.
枚葉コンペャ 3はループ状の形状をして、 コンペャベルトで駆動 する連続走行式であり、その駆動に伴う発塵がク リーン トンネル 7 内のク リーン度に影響しないよ うに、枚葉コンベア本体 3 6 の下部 に排気フ ァ ン及びエアーフ ィ ルター 3 7 を介して排気ダク トに繋 いでいる。  The single-wafer conveyor 3 has a loop shape and is of a continuous running type driven by a conveyor belt.The single-wafer conveyor body 3 is driven so that dust generated by the driving does not affect the cleanness in the clean tunnel 7. The lower part of 6 is connected to the exhaust duct via the exhaust fan and the air filter 37.
なお、 この枚葉コ ンペャ 3は、 例えば第 3図及ぴ第 4図に示した よ う に、 コ ンベア本体 3 6 の内部に、 駆動ローラー 3 0 a と、 この 駆動ローラー 3 0 a によ り駆動されるノヽ。レツ ト 3 0 b と、このノ レ ッ ト 3 0 b を所定の位置で停止させる リ フ ト式ス ト ッパー 3 0 c を備えているものでもよい。  In addition, as shown in FIGS. 3 and 4, for example, the single-wafer conveyor 3 includes a drive roller 30a and a drive roller 30a inside a conveyor body 36. Driven. It may be provided with a let 30b and a lift-type stopper 30c for stopping the knurl 30b at a predetermined position.
前記パレッ ト 3 0 b には、一定間隔でウェハ 2を載せるファ ンガ 一 3 3が固定され、 このフ ァ ンガー 3 3 の基端部が、 前記コ ンベア 本体 3 6 の上面に形成された走行隙間 3 6 a に沿って、移動できる よ うになっている。前記フィ ンガー 3 3にはウェハ 2への接触を最 小限にするための保持部 3 3 a を取り付けて、 ウェハ 2の外周縁部 のみを保持する。 一方、 前記ロボッ ト 6 0 のロボッ ト ノヽン ド 6 0 b には、 ウェハ 2の外周縁部のみを保持する保持部 6 0 aを備え、 口 ポッ ト 6 0が枚葉コ ンペャ 3からウェハ 2を掬い取り 、製造装置 5 0 — 5 4 と、 ノく ッファーカセッ ト 6 2 と、 F O U P 6 3 との間の移 载を行なう よ うになつている。 A fan 33 on which the wafer 2 is mounted is fixed to the pallet 30b at regular intervals, and a base end of the fan 33 is formed on a top surface of the conveyor body 36. Can move along gap 3 6a It has become. A holder 33 a for minimizing contact with the wafer 2 is attached to the finger 33, and only the outer peripheral edge of the wafer 2 is held. On the other hand, the robot node 60 b of the robot 60 has a holding portion 60 a for holding only the outer peripheral edge of the wafer 2, and the mouth port 60 is connected to the wafer conveyor 3 via the wafer 3. 2 is scooped and transferred between the manufacturing equipment 50-54, the knocker cassette 62, and the FOUP 63.
上記構成によ り ク リーンルームにおいて 1つの B a yを形成し、 E F E M群を連結した形態は、前記ステーシ ョ ン 4を介して連結形 態の E F E M等の外部と接している。  The form in which one Bay is formed in the clean room by the above configuration and the EFEM groups are connected is in contact with the outside of the connected EFEM or the like via the station 4.
半導体ウェハの製造工程は、一般的にウェハ上に配線や絶縁膜等 の層を形成する装置、 レジス トを塗布し、 露光、 現像してウェハ上 にレジス トのパターンを形成する装置、 ウェハ上の不要な部分をェ ツチングする装置、 ウェハにイオンを打ち込む装置、 レジス トを除 去する装置、 各工程間の洗浄装置、 検査装置等からなるが、 上記ヮ 一ク枚葉処理システムは、 これらの装置を接続するものである。  In the process of manufacturing semiconductor wafers, generally, a device that forms layers such as wiring and insulating films on a wafer, a device that applies a resist, exposes and develops to form a resist pattern on the wafer, and a wafer It consists of a device that etches unnecessary parts of the wafer, a device that implants ions into the wafer, a device that removes the resist, a cleaning device between each process, an inspection device, etc. Are connected.
この よ うなシステムの各構成は、第 5図に示したよ うにク リーン ルーム領域 Cにおいて、前記半導体製造装置 5 0〜 5 4はそれぞれ の製造装置領域 5 Aに、前記各 E F E M 6はそれぞれの E F E M領 域 6 Aに、前記ク リーン ト ンネル 7はク リーン ト ンネル領域 7 Aに、 それぞれ設置されている。これらの領域 5 A、領域 6 A及び 7 Aは、 それぞれ略密閉され、また前記ク リ ーンルーム領域 Cに対して略密 閉されている。  As shown in FIG. 5, in the clean room area C, the semiconductor manufacturing apparatuses 50 to 54 are in the respective manufacturing apparatus areas 5A, and the EFEMs 6 are in the respective EFEMs. In the area 6A, the clean tunnel 7 is provided in the clean tunnel area 7A. The area 5A, the areas 6A and 7A are each substantially closed, and are also substantially closed with respect to the clean room area C.
前記製造装置領域 5 Aは前記 E F E M領域 6 Aに隣接し、両領域 間にはウェハ 2の受け渡しのための開口部 9 Aが形成され、 この開 口部 9 Aの製造装置領域 5 A側にはロー ドロ ック 5 O A等のゥェ ハ 2の受渡口が設けられている。 The manufacturing apparatus area 5A is adjacent to the EFEM area 6A, and an opening 9A for transferring the wafer 2 is formed between the two areas.The opening 9A is located on the manufacturing apparatus area 5A side of the opening 9A. Is a load lock 5 OA C Delivery port is provided.
前記 E F E M領域 6 Aは前記製造装置領域 5 Aに隣接する と共 に、 ク リ ーンルーム領域 Cに隣接し、 両領域 6 A、 C間には空気清 浄部 F 1 が形成されている。  The EFEM area 6A is adjacent to the manufacturing apparatus area 5A and adjacent to the clean room area C, and an air cleaning section F1 is formed between the two areas 6A and C.
この空気清浄部 F 1 は、前記ク リーンルーム領域 Cから E F E M 領域 6 Aを画成する密閉材 F 1 0 と、 この密閉材 F 1 0に取付けら れ、 且つ、 ク リーンルーム領域 Cからのエアを取込むファン装置 F 1 1 と、 このファン装置 F 1 1が取込んだエアを清浄化する H E P Aフィルタ F 1 2 と、必要に応じて設置されるエアカーテン形成用 のファン装置 F 1 3からなる。  The air purifying section F 1 is provided with a sealing material F 10 defining the EFEM area 6 A from the clean room area C, and is attached to the sealing material F 10 and has a A fan unit F11 for taking in air, a HEPA filter F12 for purifying the air taken in by this fan unit F11, and a fan unit F13 for forming an air curtain installed as necessary Consists of
前記 H E P Aフィルタ F 1 2 は前記 E F E M領域 6 Aの上部を 形成すると共に、 例えばエッチングの際の酸、 ドライエッチ、 C V D、 拡散の有機ガスに対応のケミカルフィルタを設置できる。 前記ファ ン装置 F 1 3は、第 7図（A)に示したよ う にファン及び その駆動部を収容する と共に、エア取入口 F 1 3 0 a及ぴエア放出 口（図示せず）を形成した本体 F 1 3 0 と、 エア放出口からのエアを 下方にガイ ドするガイ ド部 F 1 3 1 と、ガイ ド部 F 1 3 1 と本体 F 1 3 0 との間に形成された鍔部 F 1 3 2 とからなる。  The HEPA filter F12 forms the upper part of the EFE region 6A, and a chemical filter corresponding to, for example, an acid, a dry etch, a CVD, or a diffusion organic gas at the time of etching can be provided. As shown in FIG. 7 (A), the fan device F13 accommodates a fan and its driving unit, and forms an air intake F130a and an air discharge port (not shown). Body F13, a guide F131, which guides the air from the air discharge port downward, and a flange formed between the guide F131, and the body F130. It consists of a part F 1 32.
このよ う なファン装置 F 1 3は、前記ガイ ド部 F 1 3 1 を揷置で きるサイズに切欠かれた前記密閉材 F 1 0の孔 F 1 0 0の周面に 前記鍔部 F 1 3 2を係止させ、 着脱自在に配置されている。  Such a fan device F13 is provided on the peripheral surface of the hole F100 of the sealing material F10, which is cut out to a size in which the guide portion F131 can be placed. 32 is locked, and it is arranged detachably.
そして筒状に形成された前記ガイ ド部 F 1 3 1 の高さは、その先 端開口 F 1 3 1 a が前記 H E P Aフィルタ F 1 2に略当接するよ う に設けられている。  The height of the guide portion F131, which is formed in a cylindrical shape, is provided such that the front end opening F1311a is substantially in contact with the HEPA filter F12.
前記先端開口 F 1 3 1 a の下方には、第 5図に示したよ うに前記 H E P Aフィルタ F 1 2を隔ててエアカーテンガイ ド F 1 3 3が 設置されており、前記先端開口 F 1 3 1 aから前記 H E P Aフィル タ F 1 2を通過して清浄化されたエアは、前記開口部 9 Aに対する エアカーテン F 1 3 4を形成する。 As shown in FIG. 5, an air curtain guide F 1 33 is provided below the tip opening F 13 1 a with the HEPA filter F 12 interposed therebetween, as shown in FIG. The air that has been installed and has been cleaned through the HEPA filter F12 from the tip opening F13a forms an air curtain F1334 for the opening 9A.
このエアカーテン F 1 3 4 を形成するフ ァ ン装置 F 1 3 は上述 のよ う に、 必要に応じて設置されるが、 その理由は以下の通りであ る。  The fan device F13 for forming the air curtain F134 is installed as necessary as described above, for the following reason.
製造装置 5 0〜 5 4には、 製造上有害な物質を発生するものも、 発生しないものもあり、発生しない製造装置にはエアカーテンを適 用する必要はないので、 前記孔 F 1 0 0には蓋をしておく。  Some of the manufacturing apparatuses 50 to 54 generate substances that are harmful to the production, and some of them do not. It is not necessary to apply an air curtain to the production apparatuses that do not generate such substances. Keep the lid on.
しかし、 製造装置の配置が変更されたり、 機種交換されるこ とが あり、 エアカーテンを適用する必要が出てきた場合には、 前記孔 F 1 0 0の蓋を外して、 前記ファン装置 F 1 3 をセッ トすればよレ、。 よって、 設置する製造装置に対応させて、 必要に応じて前記フ ァ ン装置 F 1 3 をセッ トすればよいので、 経済性も高く 、 フ レキシビ リティのあるシステムとなり 、また短時間で製造ライ ンの変更に対 応することができる。  However, the arrangement of the manufacturing apparatus may be changed or the model may be changed. If it becomes necessary to apply an air curtain, the lid of the hole F100 is removed, and the fan device F is removed. Just set 1 and 3. Therefore, the fan unit F13 may be set as needed in accordance with the manufacturing apparatus to be installed, so that the system is highly economical, has a high flexibility, and can be manufactured in a short time. Can be changed.
また、前記フ了 ン装置 F 1 3 のガイ ド部 F 1 3 1 の先端開口 F 1 3 1 a は、 前記 H E P Aフィルタ F 1 2に当接することで、 ファン 装置 F 1 3 を前記 E F E M内領域内に設ける場合よ り も、設置が簡 単になる。  Further, the tip opening F13a of the guide F13 of the fan device F13 comes into contact with the HEPA filter F12 so that the fan device F13 moves the fan device F13 inside the EFEM. Installation is easier than if it is installed inside.
また、空気清浄部 F 1 の駆動源を前記 E F E M領域 6 A外に設け たので、モータ等の駆動源のメ ンテナンス等を前記 E F E M領域 6 Aの外から行う ことができ、またメ ンテナンス等の際のパーティ ク ルの発生を避けることができる。 さ らに、 前記 E F E M領域 6 A内 でのフ ァ ンフイノレタュニ ッ ト （F F U )の設置スペース、取合いも不 要となり、 また F F Uから発塵する可能性をゼロにできる。 前記 H E P Aフィルタ F 1 2 は、エアカーテン F 1 3 3又は F 1 3 4用のフィルタを兼用しているので、製造装置の機種交換等に応 じて、 前記 H E P Aフィルタ 1 2に触れるこ となく 、 エアカーテン の設置、 撤去を迅速、 自在に実行できる。 Further, since the drive source of the air purifying section F1 is provided outside the EFEM area 6A, maintenance of the drive source such as a motor can be performed from outside the EFEM area 6A, and the maintenance of the drive source can be performed. In this case, particles can be avoided. Further, the installation space and arrangement of the fan finette unit (FFU) in the EFEM area 6A are not required, and the possibility of dust generation from the FFU can be reduced to zero. Since the HEPA filter F12 also serves as a filter for the air curtain F133 or F134, it does not need to touch the HEPA filter 12 according to the model change of manufacturing equipment. The installation and removal of the air curtain can be performed quickly and freely.
また、前記 E F E M領域 6 Aにはエアガイ ド F 1 3 3だけが取付 けられているだけであり、 構造が簡単で、 高度なク リーン度の維持 ができる。  Further, only the air guide F133 is attached to the EFE region 6A, so that the structure is simple and a high degree of cleanliness can be maintained.
さ らに、第 5図に示したよ うに前記 E F E M領域 6 Aに化学物質 除去 F F U 1 3 5を設けた場合には、前記製造装置領域 5 Aから前 記 E F E M領域 6 Aに流入した有害物質を含むガス等は前記化学 物質除去 F F U 1 3 5 を通じてク リーンルーム Cに放出されるた め、 ク リーンルーム Cを汚染することはない。  Furthermore, as shown in FIG. 5, when the chemical substance removal FFU 135 is provided in the EFEM area 6A, the harmful substances flowing into the EFEM area 6A from the manufacturing equipment area 5A are removed. The contained gas and the like is released to the clean room C through the chemical substance removal FFU 135, and therefore does not pollute the clean room C.
なお、前記ファン装置 F 1 3 にはガイ ド部 F 1 3 1 を形成してレ、 ' たが、 第 7図（ B )のよ うに、 ガイ ド部 F 1 3 1 に相当する筒部 F 1 3 6.を空気淸浄部 F 1 に設置するよ うにしてもよい。  The fan device F13 has a guide portion F131, which is formed as shown in FIG. 7 (B). However, as shown in FIG. 7 (B), a tubular portion F13 corresponding to the guide portion F131 is formed. 1 3 6. may be installed in the air purification section F 1.
前記ク リーン トンネル領域 7 Aは前記 E F E M領域 6 Aに隣接 し、 両領域 7 A、 6 A間にはウェハ 2の受け渡しのための開口部 9 Bが形成され、 また、 前記ク リ ーン トンネル領域 7 Aはタ リーンル ーム領域 Cに隣接し、 両領域 7 A、 C間には空気清浄部 F 2が形成 されている。  The clean tunnel region 7A is adjacent to the EFEM region 6A, and an opening 9B for transferring the wafer 2 is formed between the two regions 7A and 6A. The region 7A is adjacent to the tarn room region C, and an air cleaning portion F2 is formed between both regions 7A and C.
この空気清浄部 F 2は、前記空気清浄部 F 1 と略同様に形成され、 密閉材 F 2 0 と、 この密閉材 F 2 0に取付けられるファン装置 F 2 1 と、 このファン装置 F 2 1が取込んだエアを清浄化する H E P A フィルタ F 2 2 と、必要に応じて設置されるエアカーテン形成用の ファン装置 F 2 3力 らなり、 また、 前記ク リーン トンネル領域 7 A にはエアカーテンガイ ド F 1 3 3が設置され、前記開口部 9 Bに対 するエアカーテン F 1 3 4が形成されるよ うになっている。 The air purifying section F 2 is formed substantially in the same manner as the air purifying section F 1, and includes a sealing member F 20, a fan device F 21 attached to the sealing member F 20, and a fan device F 2 1 HEPA filter F22 for purifying the air taken in by the system, and fan unit F23 for forming the air curtain, which is installed as necessary. The air curtain is located in the clean tunnel area 7A. Guides F1 3 3 are installed, and An air curtain F 1 34 is formed.
よって前記空気清浄部 F 2は、前記空気清浄部 F 1 と略同様な作 用効果を奏する。  Therefore, the air purifying unit F2 has substantially the same operation and effect as the air purifying unit F1.
前記 E F E M領域 6 Aの気圧 P e は、前記製造装置領域 5 A及ぴ 前記ク リ ーン トンネル領域 7 Aよ り も低い値に設定され、また前記 ク リ ーンルーム領域 Cの気圧 P r は前記 E F EM領域 6 Aよ り も 低い値に設定されている。  The pressure P e of the EFEM area 6 A is set to a value lower than that of the manufacturing equipment area 5 A and the clean tunnel area 7 A, and the pressure P r of the clean room area C is Set to a value lower than EF EM area 6 A.
前記 E F EM領域 6 Aの気圧 P e を前記ク リーン トンネル領域 7 Aの気圧 P wよ り も低く保っため、 両領域間の差圧が検出され、 前記 E F E M領域 6 Aに設けられた前記化学物質除去 F F U 1 3 .5等のファンの風量がインパータによ り調整されるよ う になって レヽる。  Since the pressure P e of the EFEM area 6A is kept lower than the pressure Pw of the clean tunnel area 7A, a pressure difference between the two areas is detected, and the chemical pressure provided in the EFEM area 6A is detected. Material removal The fan air volume such as FFU 13.5 is adjusted by the impeller.
よって、 このよ う な気圧の設定によ り ク リ ーン トンネル領域じか ら前記 E F EM領域 6 Aに向って空気が動き、前記 E F EM領域 6 Aからク リ ーン トンネル領域 7 Aへの逆流は起きない。  Therefore, the air moves from the clean tunnel region toward the EF EM region 6A due to the setting of the atmospheric pressure, and moves from the EF EM region 6A to the clean tunnel region 7A. Does not occur.
また、 前記製造装置領域 5 A内のガスが、 前記ク リーン トンネル 領域 7 Aまで流入してく る危険性を抑えることができる。  Further, it is possible to suppress the risk that the gas in the manufacturing apparatus region 5A flows into the clean tunnel region 7A.
また、前記 E F EM領域 6 Aは前記ク リーンルーム領域 Cよ り高 気圧に設定されているので、 ク ラス 1， 0 0 0〜 1 0， 0 0 0程度 のク リ ーンルーム空気がク ラス 1 の E F EM領域 6 Aに侵入する ことも防止することができる。  Further, since the EF EM region 6A is set at a higher pressure than the clean room region C, the clean room air of about class 1,000 to 10,000,000 has a class 1 air pressure. It is also possible to prevent intrusion into the EF EM region 6A.
また、 前記ロボッ ト 6 0の動作に伴って、 空気が動く ことで前記 開口部 9 Aを介して、ガスが前記 E F EM領域 6 Aに流入しても前 記エアカーテン F 1 3 4に乗せて前記 E F EM領域 6 Aの下部に 流し去るこ とができる。  In addition, even if gas flows into the EF EM region 6A through the opening 9A due to the movement of air due to the operation of the robot 60, the gas is placed on the air curtain F134. Can flow down to the lower part of the EF EM region 6A.
さ らに、 同様に前記開口部 9 Bを介して、 ガスが前記ク リーン ト 2004/004489 Further, similarly, the gas flows through the opening 9B, 2004/004489
10  Ten
ンネル領域 7 Aに流入しても前記エアカーテン F 1 3 4に乗せて 前記ク リーン ト ンネル領域 7 Aの下部に流し去ることができる。 産業上の利用可能性 Even if it flows into the channel region 7A, it can be put on the air curtain F134 and flow down to the lower portion of the clean channel region 7A. Industrial applicability
以上、 本発明を半導体製造工程に代表させて、 その構成例を開示 したが、 その他のワーク製造工程、 例えば液晶製造工程等において も適用できる。 基板のサイズが大型化してきた第 6世代 （ 1 50 0 mm X l 8 0 0 mm)、 さ らにその上の第 7世代 （ 1 8 0 0 m m X 2 0 0 0 mm) においても適用できる。  As described above, the configuration example is disclosed by representing the present invention as a semiconductor manufacturing process, but the present invention can be applied to other work manufacturing processes, for example, a liquid crystal manufacturing process. Applicable to the 6th generation (1500 mm Xl 800 mm), which has a larger substrate size, and the 7th generation (1800 mm X 200 mm) above it .

Claims

請求の範囲 The scope of the claims
1. ク リーンルーム領域と、 このク リーンルーム領域から区画さ れると共にク リーン ト ンネル領域、 E F EM領域及び製造装置領域 とにそれぞれ区画される領域を備え、 1. It has a clean room area, and an area partitioned from the clean room area and divided into a clean tunnel area, an EFEM area, and a manufacturing equipment area.
前記ク リ ーン ト ンネル領域は前記 E F EM領域に隣接し、前記 E F EM領域は前記製造装置領域に隣接する と共に、  The clean tunnel region is adjacent to the EFEM region, and the EFEM region is adjacent to the manufacturing device region;
前記 E F EM領域を前記製造装置領域及び前記ク リーン トンネ ル領域よ り も低い気圧に設定し、  Setting the EF EM region to a lower pressure than the manufacturing device region and the clean tunnel region;
かつ、 前記製造装置領域から前記 E F EM領域に流入するガス、 パーティ クル等が、前記ク リ ーン ト ンネル領域を汚染する こ と を防 ぐためのエアカーテンを形成したこ とを特徴とするワーク枚葉処 理におけるク リ ーン ト ンネル。  Further, an air curtain is formed to prevent gas, particles, and the like flowing from the manufacturing apparatus area into the EFEM area from contaminating the clean tunnel area. Clean tunnel in single wafer processing.
2. 前記エアカーテンは、 カセ ッ ト式のフ ァ ン装置によ り形成さ れるこ とを特徴とする請求の範囲 1 に記載のワーク枚葉処理にお けるク リーン ト ンネル。  2. The clean tunnel according to claim 1, wherein the air curtain is formed by a cassette type fan device.
3. 前記フ ァ ン装置には、 前記ク リーンルーム領域と前記タ リー ン ト ンネル領域又は前記 E F EM領域間に設置された H E P Aフ イルクに向けて、エアを導く ガイ ド部が設けられていることを特徴 とする請求の範囲 2 に記載のワーク枚葉処理におけるク リ ーン ト ンネル。  3. The fan device is provided with a guide portion for guiding air toward the HEPA file installed between the clean room area and the tall tunnel area or the EF EM area. 3. A clean tunnel in single-wafer processing of a workpiece according to claim 2, wherein:
4. 前記フィルタは、 エアカーテン用のフィルタを兼用している こ とを特徴とする請求の範囲 3 に記載のワーク枚葉処理における ク リーン ト ンネノレ。  4. The clean assemblage according to claim 3, wherein the filter also serves as an air curtain filter.
PCT/JP2004/004489 2004-03-30 2004-03-30 Clean tunnel in single wafer processing system WO2005104220A1 (en)

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JPH09260226A (en) * 1996-03-21 1997-10-03 Hitachi Ltd Semiconductor manufacturing system
JPH10163289A (en) * 1996-11-29 1998-06-19 Dainippon Screen Mfg Co Ltd Substrate treating device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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