CN100433109C - 有源矩阵图像显示设备 - Google Patents

有源矩阵图像显示设备 Download PDF

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CN100433109C
CN100433109C CNB2004800188551A CN200480018855A CN100433109C CN 100433109 C CN100433109 C CN 100433109C CN B2004800188551 A CNB2004800188551 A CN B2004800188551A CN 200480018855 A CN200480018855 A CN 200480018855A CN 100433109 C CN100433109 C CN 100433109C
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modulator
transmitter
operational amplifier
electrode
voltage
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CN1816837A (zh
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菲利普·勒鲁瓦
克里斯托夫·普拉
克里斯托夫·费里
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InterDigital CE Patent Holdings SAS
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Abstract

本发明涉及一种包括光发射器的阵列的有源矩阵图像显示设备。每一个光发射器(Ein，Eim)受到具有特定断路阈值电压(Vth)的电流调制器(Mim)的控制。所述设备还包括补偿装置(Ain，Ajn，11，21)，用于对调制器(Mim)的断路阈值电压(Vth)进行补偿。这些补偿装置包括连接在调制器的栅极电极和源极电极之间的至少一个运算放大器(Ain，11，21)。该运算放大器的反馈对至少一个调制器(Mim)的断路阈值电压(Vth)进行补偿，无论所述电压值如何。

Description

有源矩阵图像显示设备
技术领域
本发明涉及一种有源矩阵图像显示设备。
背景技术
平面图像显示屏越来越多地在许多种类的应用中得到使用，例如在动力车辆显示设备、数字摄像机或移动电话中。
从有机场致发光单元中形成光发射器的显示器(例如OLED(有机发光二极管)显示器)是已知的。
特别地，无源OLED型显示器已经广泛地得到商用。然而，它们会消耗大量的电能并具有较短的寿命。
有源矩阵OLED显示器包括内置电子装置且具有许多优点，例如减少了消耗、较高的分辨率、与视频速率的兼容性、以及比无源矩阵OLED显示器更长的寿命。
通常，有源矩阵显示设备包括特别是由光发射器的阵列所形成的显示板。每一个光发射器与要显示的图像的像素或子像素相关联，并且经由寻址电路，由列电极阵列和行电极阵列对其进行寻址。
图1示出了之后被称为发射器的光发射器E、以及与其相关的寻址电路。更准确地，这是电压寻址电路。
典型地，该类寻址电路包括用于控制的装置和用于给发射器供电的装置。经由行电极阵列和列电极阵列对其进行控制。这些电极用来从显示板的所有发射器中选择然后寻址特定的发射器E。
发射器寻址装置包括控制开关I1、存储电容器C和电流调制器M。
调制器M将针对像素或子像素的数据控制电压转换为流入其的电流。通常，调制器M是n或p-MOSFET型的晶体管组件。这样的组件具有三个端子，即，在其间流动调制电流的漏极和源极、以及向其施加控制电压的栅极。
当该调制器为如图1所示的n型时，调制后的电流在漏极和源极之间流动；当该调制器为p型时，调制后的电流在源极和漏极之间流动。调制器M与发射器串联。该串联的两个端子与电源装置相连，阳极端子与电源电极Vdd相连，而阴极端子通常与地电极相连。
在传统结构的OLED显示器的图1所示的情况下，发射器的阳极形成了与有源矩阵的接口：调制器的漏极(n型的情况)或源极(p型的情况)于是与电源电极Vdd相连，并且发射器的阴极与地电极相连。
在具有所谓的反相结构的OLED显示器的情况下(未示出)，发射器的阴极形成了与有源矩阵的接口：调制器的源极(n型的情况)或漏极(p型的情况)于是与地电极相连，并且发射器的阳极与电源电极Vdd相连。
当通过控制开关I1来选择调制器M时，将视频数据电压Vdata施加到调制器M的栅极。当认为调制器M操作在饱和区域时，该调制器产生通常作为调制器的栅极和源极之间所施加的电位差的二次函数而变化的漏极电流。
优选地，由于显示板的光发射器按行和列排列，相同行的发射器的所有控制开关I1受到所谓的行电极的控制，并且相同列的发射器的控制开关I1的所有视频数据信号输入由所谓的列电极来提供。
当需要寻址光发射器时，将控制电压施加到与该发射器的控制开关I1的栅极相连的行电极Vselect，以便选择所述发射器。接通开关I1，并且然后将列电极上存在的数据电压Vdata施加到调制器M的栅极。
用于寻址光发射器的装置包括：连接在调制器的栅极和经由调制器施加到该发射器上的电源电压Vdd之间的存储电容器C。该存储电容器C存储了施加到调制器的栅极上的电压，以使发射器的光能在图像帧的持续时间上保持为大致恒定，即使在不再闭合针对该发射器的控制开关和不再选择相应的行的情况下。
在针对OLED显示器的有源矩阵设备的情况下，控制开关I1和调制器M是薄膜晶体管，也被称为TFT。
构造在玻璃衬底上作为薄膜沉积的这些组件通常基于低温多晶硅(LTPS)技术。该技术使用激光，目的是将非晶硅转换为多晶硅。在激光脉冲期间，已经快速加热的非晶硅以被熔化而结束，并且在冷却阶段期间，发生了使非晶硅结晶为多晶硅的过程。
然而，该结晶过程在多晶硅薄膜晶体管的断路阈值电压中引入了局部空间变化。这些变化是由于多晶硅颗粒边界和尺寸在结晶阶段期间不能够充分地得到控制的事实而造成的。
图2示出了针对各种多晶硅薄膜晶体管，作为所施加的栅极源极电压Vgs的函数的漏极电流Id的变化。在该图中可以看出：这些晶体管的断路阈值电压Vth彼此不同，并且由于由晶体管结晶过程所引入的变化而造成的缺陷，表现为数值上的发散。
为了允许流过漏极电流，调制器的栅极源极电压Vgs必须大于由前述晶体管之一所形成的调制器的断路阈值电压Vth。
作为推论，流过这样的薄膜晶体管的漏极电流随着这些晶体管的断路阈值电压而变化。这是因为当薄膜晶体管操作在饱和模式下时，其作为电流产生器来操作。其传递给发射器的所施加的漏极电流根据以下等式而变化：
Ic＝K(Vgs-Vth)2
其中K＝kW/2L，并且：
-Vgs对应于该晶体管的施加的栅极源极电压，该电压还被称为设置点电压；
-Vth对应于该晶体管的断路阈值电压；
-W和L分别对应于晶体管的沟道的宽度和长度；
-k是取决于用来制造晶体管的技术的类型的常数。
因此，作为如图2所示的曲线所确认的，在饱和模式下，漏极电流根据每一个晶体管的断路阈值电压而逐晶体管地发生变化。
结果，构成任一个显示板且由相同的电源电压Vdd供电的多晶硅调制器M将产生不同强度的电流，即使在这些调制器受到相同的数据电压Vdata的控制的情况下。
现在，发射器E通常发射与流过其的电流成正比的光强度，从而多晶硅晶体管的断路阈值的非均匀性导致了由这样的晶体管的矩阵形成的显示器的亮度非均匀性。这导致了亮度等级之间的差别，并表现为使用户感到视觉上的不舒适。
为了限制该不舒适，已经提出了用于补偿断路阈值电压的变化的各种电路。
因此，被称为数字控制方法的第一方法在于：通过修改像素的结构来减少亮度等级上的恶化。然而，该方法会消耗能量且需要高速寻址电路。
在Sony的文档“A 13-inch AMOLED display”、SID Digest，2001中所描述的另一方法在于对像素的结构进行电流编程。该寻址模式同时补偿电荷载流子的迁移率的变化并因而补偿阈值电压的变化。然而，该电流编程必须为较低的亮度考虑非常低的电流电平，相当大地增加了建立传递给OLED光发射器的适当电流所需的编程时间。另外，使用该方法产生的每一个寻址电路需要每一个发射器植入四个TFT。该方法非常不经济，并相当大地减少了像素的有用光发射面积。
在文档“Seoul National University，AM-LCD 02，OLED-2，Page13”中描述的另一方法实现了通过包括两个附加TFT的电压寻址电路来进行电压补偿。这些晶体管连接在控制开关I1和电流调制器M之间。该另一方法基于以下原理：第一附加晶体管和调制器M的电压阈值是相同的，这是由于在其制造期间，这些组件与用来加热薄膜以进行再结晶的激光束的扫描方向平行，并因而经过了实质上相同的再结晶条件。在这样的寻址电路中，第一附加晶体管的断路阈值电压自动地补偿调制器的断路电压，从而使给发射器供电的漏极电流与断路电压无关。应该注意，第二薄膜晶体管还允许对充电电容器中所存储的电压进行复位。
然而，该方法中的寻址电路还需要产生四晶体管寻址电路。这样导致的更大的复杂度同时减小了显示器的可靠性和产量，引起了制造成本的相当大的增加。
在文档EP 1 138 019中描述了另一方法，特别是参考该文档的图7和11，如段落42和43所述；这里描述的电压控制方法使用了运算放大器54来补偿与相同像素列相关的所有调制器32的断路阈值上的变化；该放大器的输出经由开关SW2a和电极Xi与调制器32的栅极G相连；该放大器的非反相输入(+)经由电阻器52、开关SW1a和电极Wi，与调制器32的漏极电极D相连。
已经观察到：按照该方式连接的运算放大器实际上并未真正如该文档中所描述地那样操作，而是操作为滞后比较器，通常还被称为“施密特触发器”，用于以“导通/截止”数字模式(即，双稳态模式)来控制显示器的发射器；然后，可以仅通过PWM(脉冲宽度调制)来获得灰度等级，引起了其他显示器质量问题，例如轮廓问题。而且，这样的设置需要具有其相应的驱动装置的许多开关，这是较为昂贵的。
在文档US 2002/047817中，描述了一种也包括运算放大器的用于控制电流调制器T2的电路，该运算放大器在这里用作电压倾斜VDRV和数据电压VDAT之间的比较器，从而对调制器T2的开启时间进行编程，如特别是该文档的段落14所示，尤其是最后的短句，因此存在上述PWM的缺陷。还应该注意：运算放大器在这样的设置中表现为没有反馈。
发明内容
本发明的目的是提出一种有源矩阵图像显示设备，其中对多晶硅晶体管的断路阈值电压自动进行补偿，且不再存在现有技术的方法中的缺陷。
为此，本发明的主题是一种有源矩阵图像显示设备，包括：
-多个光发射器，形成了按行和列分布的发射器阵列；
-用于控制阵列的光发射器的发射的装置，包括：
-对于阵列的每一个光发射器，电流调制器能够控制所述发射器，并且包括源极电极、漏极电极、栅极电极和断路阈值电压(Vth)，所述断路阈值电压从一个调制器相对于另一个调制器发生变化，
-列寻址装置，能够通过将数据电压施加到其调制器的栅极电极来控制其，对发射器的每一列的发射器进行寻址；
-行选择装置，能够通过施加选择电压来选择发射器的每一行的发射器；
-补偿装置，用于对每一个调制器的断路阈值电压进行补偿，
其特征在于：
-所述补偿装置包括至少一个运算放大器，该运算放大器的反馈能够对至少一个调制器的断路阈值电压进行补偿，无论所述电压的值如何；以及
-所述放大器具有反相输入(-)、非反相输入(+)和输出端子；以及
-所述运算放大器的非反相输入(+)与控制所述调制器的列寻址装置相连；以及
-所述运算放大器的反相输入(-)与所述调制器的源极电极相连；以及
-所述运算放大器的输出与所述调制器的栅极电极相连。
根据本发明的特定实施例，所述显示设备包括以下一个或多个特征：
-对于与发射器相关联的所述调制器，所述控制装置包括：连接在运算放大器的输出和所述调制器的栅极电极之间的至少第一控制开关，所述第一开关具有能够接收针对此发射器的行选择电压的栅极电极；
-对于与发射器相关的所述调制器，所述控制装置包括：连接在运算放大器的反相输入和所述调制器的源极电极之间的第二控制开关，所述第二开关具有与所述第一开关的栅极电极相连的栅极电极，以便同步地接收选择电压；以及
-行选择装置能够给所述第一开关的至少一个的栅极电极供电，以便选择该行中的至少一个发射器；以及
-所述补偿装置包括运算放大器，能够对用于控制列中的发射器的所有调制器的断路阈值电压进行补偿；以及
-所述调制器和第一和第二控制开关是以薄膜多晶硅或薄膜非晶硅构成的组件；以及
-所述调制器是n型晶体管且其漏极由电源装置供电；以及
-所述调制器是p型晶体管，并且所述控制装置还包括位于调制器的源极和电源电极之间的无源组件；以及
-每一个发射器是有机发光二极管；以及
-所述无源组件包括薄膜电阻器；以及
-所述控制装置还包括连接在所述调制器的栅极电极和源极电极之间的至少一个充电电容器，以便在图像帧的持续时间上保持像素或子像素的亮度；以及
-所述控制装置包括连接在运算放大器的输出和反相输入之间的补偿电容器，以便使有源矩阵电压稳定；以及
-调制器的漏极电流取决于调制器的电源电压之间的差值和调制器的栅极和源极之间的电位差；以及
-所述补偿装置包括多个运算放大器，每一个运算放大器能够补偿用于控制发射器的调制器的断路阈值电压。
有利地，根据本发明的设备能够对由于多晶硅组件中的局部空间变化而造成的亮度变化。结果，相当大地提高了图像的均匀性。
另外，有利地，针对光发射器的每一个寻址电路仅包括三个薄膜晶体管。结果，该图像显示设备较为易于制造且造用了更小的像素的有用区域，引起了所述像素的更高的开口孔径比。
另外，由于其需要更少的硅，因此其制造更为便宜。这是由于考虑到形成显示板的发射器数量，每一个发射器节省一个晶体管代表了相当大的节省和制造产量的增加。
本发明的另一目的是提出一种控制电流调制器的电路，例如能够在有源矩阵图像显示设备中使用。
为此，本发明提出了一种用于控制具有未定义的断路阈值电压的电流调制器的电路，所述电路包括断路阈值电压补偿装置，
其特征在于所述断路阈值电压补偿装置包括至少一个运算放大器，其输出与所述调制器的栅极电极相连而其反相输入与所述调制器的源极电极相连，并且其反馈对所述调制器的断路阈值电压进行补偿，从而使流过调制器的漏极电流的强度与调制器的断路阈值电压无关。优选地，该运算放大器的输出与调制器的栅极电极相连，而其反相输入(-)与该相同调制器的源极电极相连。
附图说明
参考附图，通过阅读以下作为非限定性示例所给出的描述，本发明将得到更为清楚地理解，其中：
-图1是现有技术所公知的光发射器寻址电路的示意图；
-图2是示出了通过公知的低温多晶硅(LTPS)结晶的技术制造的各种薄膜晶体管的电流电压特性的曲线的曲线图；
-图3是其中寻址电路电流调制器为n型的本发明的第一实施例的示意图；
-图4是其中寻址电路电流调制器为p型的本发明的第二实施例的示意图；以及
-图5是根据本发明第一实施例的发射器阵列的一部分的示意图。
具体实施方式
图3示出了根据本发明第一实施例的图像显示设备的元件。该元件包括光发射器E和与其相关联的寻址电路10。
通常，该寻址电路10包括：电流调制器M、第一控制开关I1、存储电容器C、行选择电极Vselect、列寻址电极Vdata、以及电压电源电极Vdd。
在所示示例中，调制器是n型的，发射器是具有传统结构的OLED型的二极管。假如使用p型调制器并对调制器-发射器串进行反相，即，发射器的阳极与电源电极Vdd相连而调制器的漏极与地电极相连，则该电路还可适用于具有反相结构的OLED显示器。
随后，将参考图4来描述适合于使用具有传统OLED结构的p型调制器的另一电路，其还适合于具有反相的OLED结构的n型调制器。
电源电极Vdd与调制器M的漏极相连。当将数据电压Vdata施加到该调制器M的栅极时，在漏极和源极之间建立了还被称为漏极电流的设置点电流，并且其对光发射器E的阳极进行供电。
该漏极电流的强度尤其取决于调制器晶体管的断路阈值电压Vth。光发射器E发射与该电流成比例的光量。因此，相同的数据电压并未产生逐发射器相同的光量。
为了补偿由阈值电压的局部空间变化而引起的亮度变化，根据本发明的寻址电路包括运算放大器11，用于对电流调制器M的断路阈值电压Vth进行补偿。
实际上，这里的列寻址电极与运算放大器11的非反相输入(+)相连。调制器M的源极与运算放大器的反相端子(-)相连，而运算放大器11的输出端子与调制器M的栅极相连以便通过施加控制电压使其导通。
优选地，选择开关I1串联在调制器M的栅极和运算放大器11的输出端子之间，且开关I2串联在调制器的源极和运算放大器的反相端子(-)之间，并且对这些开关I1、I2的控制连接到相同的行选择电极Vselect。
在该结构中，这样从运算放大器中获得的反馈有利地对调制器M的断路阈值电压Vth进行补偿，并且无论该电压为何值，均这样做。
因此，由于运算放大器的反馈，光发射器E的阳极的电压还等于列数据电压Vdata，并且由调制器发射的且通过发射器的漏极电流与调制器M的断路阈值电压Vth无关。由运算放大器所产生的栅极源极电压对调制器M的阈值电压进行补偿，无论其为何值。因此，这里，设置了根据等效二极管负载通过数据电压Vdata控制的电流产生器，并非固定的。
此外，有利地，施加对断路阈值电压的反馈与施加数据控制电压Vdata和选择控制电压Vselect同步。
有利地，该寻址电路还包括由行控制电极导通和介质的第一控制开关I1。该第一开关I1连接在运算放大器11的输出端和电流调制器M的栅极之间，从而使调制器M导通。
当将扫描控制电压Vselect施加到第一开关I1的栅极时，第一开关I1导通，并且将运算放大器的输出电压施加到调制器的栅极。
寻址电路还包括连接在调制器M的源极和运算放大器11的反相端子(-)之间的附加开关I2，以便允许运算放大器11在反馈模式下操作。
有利地，第二开关还可以受到施加到行选择电极上的扫描电压Vselect的控制。在这种情况下，第二开关I2的栅极与第一开关I1的栅极相连，并且第二开关与第一开关I1同步地接收控制电压Vselect。
该第二开关I2确保了发射器的寻址安全性。其防止了位于与所选的发射器相同的列中的另一寻址电路中的漏电流的出现。
优选地，利用TFT技术来制造两个开关I1、I2和调制器M。这些薄膜晶体管可以由非晶硅或多晶硅来制造。包括三个TFT组件和运算放大器的寻址结构与制造TFT组件的这些技术中的TFT组件和运算放大器兼容。
为了在图像帧的持续时间上保持亮度，寻址电路包括位于调制器M的栅极和其源极之间的存储电容器C。该电容器能够在与帧持续时间相对应的时间间隔上使调制器M的栅极电极上的电压保持大致恒定。
寻址电路还可以包括经由第一和第二控制开关I1和I2与充电电容器C并联的补偿电容器Cc，以便稳定电路。
当扫描像素时，所选发射器的两个控制开关I1、I2导通，并且由于运算放大器的反馈，将施加到运算放大器的非反相端子(+)上的数据电压Vdata实际上施加到光发射器E的阳极上。
在扫描像素之后，调制器M操作在饱和区域，并传递与存储在存储电容器C中的电压成比例的漏极电流。由于由运算放大器所实现的电压补偿，漏极电流与调制器M的断路阈值电压Vth无关。因此，相同列的逐像素的阈值电压的变化对流过这些像素的电流不会存在影响。
图4示出了本发明的第二实施例。
在所示的示例中，此时的调制器是p型的，并且发射器是传统结构的OLED型二极管。假如使用n型调制器并对调制器-发射器串进行反相，即，发射器的阳极与电源电极Vdd相连而调制器的源极经由无源组件与地电极相连，则该电路还可适用于具有反相结构的OLED显示器。
如同图3所示的第一实施例，在反馈模式下使用运算放大器21。其输出预先通过控制开关I1连接到调制器M的栅极，而其反相输入(-)预先经由控制开关I2连接到调制器M的源极。预先地，将数据控制电压Vdata注入到放大器的非反相输入(+)。
不同于第一实施例，这里，发射器的电源电极Vdd经由无源组件R与调制器M的阳极相连。由于调制器是p型的，因此，这里，调制器的漏极与光发射器E的阳极相连。当将数据控制电压Vdata施加到p型调制器的栅极时，漏极电流在这种情况下从其源极到其漏极通过所述调制器。
该无源组件可以诸如包括：电极、电阻器、二极管或电路。在图4所示的说明性示例中，该无源组件有利地由薄膜电阻器R构成。
当选择发射器时，将数据电压Vdata施加到调制器M的栅极并因而施加到电阻器R和调制器的源极所公用的端子，并且漏极电流流过调制器M和发射器E。根据以下线性定律来定义该电流：
Id＝(Vdd-Vdata)/R            (等式1)。
因此，这是根据固定负载R通过数据电压Vdata来控制的电流产生器。由于该固定负载，有利地，可以驱动该发射器，而完全与二极管或发射器E的特性无关。
可以证明的是，流过调制器和发射器E的电流与其断路阈值电压无关。此外，由于电路电源电极Vdd是恒定的，该漏极电流直接受到数据电压Vdata的控制。对于固定数据控制电压，因此漏极电流是恒定的。
而且，如上所述，在已经扫描像素之后，调制器M处于其饱和操作模式，并且漏极电流由以下等式来定义：
Id＝k/2.W/I(Vgs-Vth)2     (等式2)
对于固定数据电压，漏极电流Id是恒定的(参考等式1)，并且断路阈值电压Vth和栅极源极电压之间的差值因而是恒定的。
因此，由于运算放大器的反馈，持续地针对另一个运算放大器，调节一个运算放大器的断路阈值电压Vth和栅极源极电压。
结果，漏极电流并未随着各种p型晶体管的断路阈值电压而变化。该逐像素的变化不再会对流过光发射器的电流产生影响。
图5示意地示出了其中寻址电路调制器为n型组件的有源矩阵显示板的发射器阵列的一部分。
通常，在这样的显示板中，将发射器阵列和其寻址电路按行和列来排列。
有利地，将扫描电压Vselect，n施加到行n的电极上控制针对该行的像素的所有第一控制开关I1和第二控制开关I2。
与要显示的图像相对应的视频数据电压Vdata，i和Vdata，j经由列电极向列中的运算放大器供电。
有利地，如图5所示的发射器的阵列每列仅包括单个的运算放大器。该运算放大器Ain能够对该列中的每一个调制器Min、Mim的各个断路阈值电压进行补偿。
当正在对阵列放大器的每一行进行扫描时(该扫描对应于图像帧)，显示板的各列的运算放大器Ain、Ajn将同时对所有该行的调制器的断路阈值电压进行补偿。
将列中的运算放大器的输出经由第一控制开关I1与该列的每一个调制器的栅极相连。该列的运算放大器的反相输入(-)经由第二控制开关I2与该列的每一个调制器的源极相连。
为了选择发射器Ein，将选择电压Vselect，n施加到该发射器Ein的行n的行电极，并且为了获得所需的发射，然后将数据电压Vdata，i施加到该发射器Ein的列中的列i的电极上。
如上所解释的，由于第一I1和第二I2控制开关导通，将数据控制电压Vdata，i施加到调制器Min的源极。通过列放大器Ain的输出对该调制器的断路阈值电压进行补偿，并且由该调制器Min将漏极电流发射到发射器Ein。
由于显示板或发射器阵列每列仅包括单个运算放大器来补偿阈值电压变化，并且由于该显示板的每一个像素仅包括三个晶体管，因此获得了便宜的显示板，能够提供非常均匀的亮度等级和非常好的视觉舒适度。

Claims (12)

1、一种有源矩阵图像显示设备，包括：
-多个光发射器(Ejn，Ein，Eim)，形成了按行和列分布的发射器阵列；
-用于控制阵列的光发射器的发射的装置，包括：
-对于阵列的每一个光发射器(Ejn，Ein，Eim)，电流调制器(Mim)能够控制所述发射器，并且包括源极电极、漏极电极、栅极电极和断路阈值电压(Vth)，
-列寻址装置，能够通过将数据电压(Vdata，i)施加到发射器(Ein，Eim)的每一列的发射器的调制器(Min，Mim)的栅极电极来控制这些发射器，对发射器(Ein，Eim)的每一列的发射器进行寻址；
-行选择装置，能够通过施加选择电压(Vselect，n)来选择发射器(Ejn，Ein)的每一行的发射器；
-补偿装置(Ain，Ajn,11，21)，用于对每一个调制器(Mim)的断路阈值电压(Vth)进行补偿，
其特征在于：
-所述补偿装置包括至少一个运算放大器，具有反相输入(-)、非反相输入(+)和输出端子；
以及：
-所述运算放大器的非反相输入(+)与控制所述调制器的列寻址装置相连；以及
-所述运算放大器的反相输入(-)与所述调制器的源极电极相连；以及
-所述运算放大器的输出与所述调制器的栅极电极相连，
从而，该运算放大器的反相输入(-)和输出的所述连接形成能够补偿所述调制器的断路阈值电压的反馈。
2、根据权利要求1所述的图像显示设备，其特征在于：对于与发射器相关联的所述调制器，所述控制装置包括：连接在运算放大器(Ain，11，21)的输出和所述调制器(Min)的栅极电极之间的至少第一控制开关(I1)，所述第一开关具有能够接收针对此发射器(Ein)的行选择电压(Vselect，n)的栅极电极。
3、根据权利要求2所述的图像显示设备，其特征在于：对于与发射器相关的所述调制器，所述控制装置包括：连接在运算放大器(Ain，11，21)的反相输入(-)和所述调制器(M)的源极电极之间的第二控制开关(I2)，所述第二开关(I2)具有与所述第一开关(I1)的栅极电极相连的栅极电极，以便同步地接收选择电压(Vselect)。
4、根据权利要求2或3所述的图像显示设备，其特征在于：行选择装置能够给所述第一开关的至少一个的栅极电极供电，以便选择该行中的至少一个发射器(Ein)。
5、根据权利要求1到3任一个所述的图像显示设备，其特征在于所述运算放大器(Ain，11，21)能够对用于控制列中的发射器(Ein，Eim)的所有调制器(Min，Mim)的断路阈值电压(Vth)进行补偿。
6、根据权利要求3所述的图像显示设备，其特征在于：所述调制器(Min)和第一(I1)和第二(I2)控制开关是以薄膜多晶硅或薄膜非晶硅构成的组件。
7、根据权利要求1到3任一个所述的图像显示设备，其特征在于：所述调制器(Min)是n型晶体管且其漏极由电源装置(Vdd)供电。
8、根据权利要求1到3任一个所述的图像显示设备，其特征在于：所述调制器(Min)是p型晶体管，并且所述控制装置还包括位于调制器(Min)的源极和电源电极(Vdd)之间的无源组件(R)。
9、根据权利要求5所述的图像显示设备，其特征在于：所述调制器(Min)是p型晶体管，并且所述控制装置还包括位于调制器(Min)的源极和电源电极(Vdd)之间的无源组件(R)。
10、根据权利要求1到3任一个所述的图像显示设备，其特征在于：每一个发射器(E)是有机发光二极管。
11、一种用于控制具有源极电极、漏极电极、栅极电极和断路阈值电(Vth)的电流调制器(M)的电路，所述电路包括断路阈值电压补偿装置，
其特征在于所述断路阈值电压补偿装置包括至少一个运算放大器(11，21)，具有反相输入(-)、非反相输入(+)和输出端子，其中输出端子能够与所述调制器的栅极电极相连，以及反相输入(-)能够与所述调制器的源极电极相连，从而，所述连接形成能够补偿所述调制器的断路阈值电压的反馈，从而使流过调制器(M)的漏极电流的强度与调制器(M)的断路阈值电压(Vth)无关。
12、根据权利要求11所述的电路，其特征在于所述电路包括存储电容器(C)，与调制器的栅极电极相连且能够存储施加到调制器的栅极电极上的电压。
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US20070057874A1 (en) 2007-03-15
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US7557778B2 (en) 2009-07-07

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