CN100400599C - 含磷硅氮烷组合物、含磷硅质膜、含磷硅质填料、用于生产含磷硅质膜的方法和半导体装置 - Google Patents
含磷硅氮烷组合物、含磷硅质膜、含磷硅质填料、用于生产含磷硅质膜的方法和半导体装置 Download PDFInfo
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- CN100400599C CN100400599C CNB2004800205379A CN200480020537A CN100400599C CN 100400599 C CN100400599 C CN 100400599C CN B2004800205379 A CNB2004800205379 A CN B2004800205379A CN 200480020537 A CN200480020537 A CN 200480020537A CN 100400599 C CN100400599 C CN 100400599C
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- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003199363 | 2003-07-18 | ||
JP199363/2003 | 2003-07-18 |
Publications (2)
Publication Number | Publication Date |
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CN1823136A CN1823136A (zh) | 2006-08-23 |
CN100400599C true CN100400599C (zh) | 2008-07-09 |
Family
ID=34074413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004800205379A Expired - Fee Related CN100400599C (zh) | 2003-07-18 | 2004-07-07 | 含磷硅氮烷组合物、含磷硅质膜、含磷硅质填料、用于生产含磷硅质膜的方法和半导体装置 |
Country Status (7)
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US (1) | US7368491B2 (zh) |
EP (1) | EP1652890B1 (zh) |
JP (1) | JP4920252B2 (zh) |
KR (1) | KR101086625B1 (zh) |
CN (1) | CN100400599C (zh) |
TW (1) | TWI326114B (zh) |
WO (1) | WO2005007748A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5058733B2 (ja) * | 2007-09-12 | 2012-10-24 | AzエレクトロニックマテリアルズIp株式会社 | ケイ素含有微細パターン形成用組成物を用いた微細パターン形成方法 |
KR20210091825A (ko) * | 2018-12-13 | 2021-07-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 인 도핑된 실리콘 나이트라이드 막들을 증착하기 위한 방법들 |
WO2020239556A1 (en) * | 2019-05-24 | 2020-12-03 | Merck Patent Gmbh | Coating composition with phosphazene catalyst |
US20220267617A1 (en) * | 2021-02-23 | 2022-08-25 | Thor Custom Steel Coatings LLC | Steel Protective Coating Compositions, Methods of Their Manufacture, and Methods of Their Use |
US20230124254A1 (en) * | 2021-02-23 | 2023-04-20 | Thor Custom Steel Coatings LLC | Steel Protective Coating Compositions, Methods of Their Manufacture, and Methods of Their Use |
US20230212425A1 (en) * | 2021-02-23 | 2023-07-06 | Thor Custom Steel Coatings LLC | Steel Protective Coating Compositions, Methods of Their Manufacture, and Methods of Their Use |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459114A (en) * | 1992-11-26 | 1995-10-17 | Tonen Corporation | Method for producing ceramic products |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4666872A (en) * | 1984-09-21 | 1987-05-19 | Dow Corning Corporation | Ceramic materials from silazane polymers |
ATE112097T1 (de) * | 1988-04-26 | 1994-10-15 | Siemens Ag | Verfahren zum herstellen borhaltiger und/oder phosphorhaltiger silikatglasschichten für höchstintegrierte halbleiterschaltungen. |
JPH0222475A (ja) * | 1988-07-08 | 1990-01-25 | Nec Corp | 絶縁膜形成溶液および半導体装置の製造方法 |
JP3114989B2 (ja) * | 1990-10-30 | 2000-12-04 | 東燃株式会社 | ポリホスホシラザンとその製造方法及びリン原子含有セラミックス |
DE4234778C2 (de) * | 1992-10-15 | 1995-12-07 | Raymond A & Cie | Blechmutter zur Blindbefestigung |
JPH06283507A (ja) * | 1993-03-26 | 1994-10-07 | Kawasaki Steel Corp | 半導体装置の製造方法 |
US5558908A (en) * | 1994-11-07 | 1996-09-24 | Lanxide Technology Company, Lp | Protective compositions and methods of making same |
JPH08176510A (ja) * | 1994-12-26 | 1996-07-09 | Hitachi Chem Co Ltd | シリカ系被膜の製造法、シリカ系被膜および半導体装置 |
US5922411A (en) * | 1995-07-13 | 1999-07-13 | Tonen Corporation | Composition for forming ceramic material and process for producing ceramic material |
US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
JPH11105186A (ja) * | 1997-09-30 | 1999-04-20 | Tonen Corp | 低誘電率シリカ質膜 |
US6136729A (en) * | 1998-08-12 | 2000-10-24 | Advanced Micro Devices, Inc. | Method for improving semiconductor dielectrics |
JP2000308090A (ja) | 1999-04-19 | 2000-11-02 | Telecommunication Advancement Organization Of Japan | 映像表示処理装置及び映像撮影処理装置並びにカメラ制御装置 |
JP5020425B2 (ja) | 2000-04-25 | 2012-09-05 | Azエレクトロニックマテリアルズ株式会社 | 微細溝をシリカ質材料で埋封する方法 |
KR100362834B1 (ko) | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치 |
JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
KR100436495B1 (ko) | 2001-06-07 | 2004-06-22 | 삼성전자주식회사 | 스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법 |
US6479405B2 (en) | 2000-10-12 | 2002-11-12 | Samsung Electronics Co., Ltd. | Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method |
JP4574124B2 (ja) | 2003-05-01 | 2010-11-04 | Azエレクトロニックマテリアルズ株式会社 | コーティング組成物、多孔質シリカ質膜、多孔質シリカ質膜の製造方法及び半導体装置 |
-
2004
- 2004-06-24 TW TW093118298A patent/TWI326114B/zh not_active IP Right Cessation
- 2004-07-07 EP EP04747118.0A patent/EP1652890B1/en not_active Expired - Lifetime
- 2004-07-07 KR KR1020067001139A patent/KR101086625B1/ko active IP Right Grant
- 2004-07-07 CN CNB2004800205379A patent/CN100400599C/zh not_active Expired - Fee Related
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- 2004-07-07 US US10/564,336 patent/US7368491B2/en not_active Expired - Fee Related
- 2004-07-07 JP JP2005511815A patent/JP4920252B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459114A (en) * | 1992-11-26 | 1995-10-17 | Tonen Corporation | Method for producing ceramic products |
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US20060217487A1 (en) | 2006-09-28 |
EP1652890B1 (en) | 2017-01-11 |
EP1652890A1 (en) | 2006-05-03 |
KR20060066172A (ko) | 2006-06-15 |
EP1652890A4 (en) | 2006-09-13 |
CN1823136A (zh) | 2006-08-23 |
JP4920252B2 (ja) | 2012-04-18 |
TWI326114B (en) | 2010-06-11 |
TW200504878A (en) | 2005-02-01 |
WO2005007748A1 (ja) | 2005-01-27 |
JPWO2005007748A1 (ja) | 2006-11-30 |
KR101086625B1 (ko) | 2011-11-25 |
US7368491B2 (en) | 2008-05-06 |
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