CN100389488C - 控制回蚀刻截面轮廓的方法和装置 - Google Patents
控制回蚀刻截面轮廓的方法和装置 Download PDFInfo
- Publication number
- CN100389488C CN100389488C CNB2003101229664A CN200310122966A CN100389488C CN 100389488 C CN100389488 C CN 100389488C CN B2003101229664 A CNB2003101229664 A CN B2003101229664A CN 200310122966 A CN200310122966 A CN 200310122966A CN 100389488 C CN100389488 C CN 100389488C
- Authority
- CN
- China
- Prior art keywords
- layer
- barc
- etching
- etch
- interlayer hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 150
- 239000011229 interlayer Substances 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- PDPXHRBRYUQCQA-SFOWXEAESA-N [(1s)-1-fluoro-2-(hydroxyamino)-2-oxoethyl]phosphonic acid Chemical compound ONC(=O)[C@@H](F)P(O)(O)=O PDPXHRBRYUQCQA-SFOWXEAESA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004380 ashing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229664A CN100389488C (zh) | 2003-12-30 | 2003-12-30 | 控制回蚀刻截面轮廓的方法和装置 |
US10/773,565 US7084054B2 (en) | 2003-12-30 | 2004-02-06 | Method for making an opening for electrical contact by etch back profile control |
US11/497,552 US7655561B2 (en) | 2003-12-30 | 2006-07-31 | Method for making an opening for electrical contact by etch back profile control |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229664A CN100389488C (zh) | 2003-12-30 | 2003-12-30 | 控制回蚀刻截面轮廓的方法和装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1635623A CN1635623A (zh) | 2005-07-06 |
CN100389488C true CN100389488C (zh) | 2008-05-21 |
Family
ID=34683168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101229664A Expired - Lifetime CN100389488C (zh) | 2003-12-30 | 2003-12-30 | 控制回蚀刻截面轮廓的方法和装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7084054B2 (zh) |
CN (1) | CN100389488C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100389488C (zh) * | 2003-12-30 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | 控制回蚀刻截面轮廓的方法和装置 |
CN101459072B (zh) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 蚀刻底层抗反射层及制作布线沟槽的方法 |
CN102431965A (zh) * | 2011-12-15 | 2012-05-02 | 上海先进半导体制造股份有限公司 | 凸柱结构的制造方法 |
CN104425520B (zh) * | 2013-08-27 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176963A (ja) * | 1999-12-16 | 2001-06-29 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
CN1421915A (zh) * | 2001-11-30 | 2003-06-04 | 联华电子股份有限公司 | 双重镶嵌结构的制造方法 |
CN1444264A (zh) * | 2002-03-08 | 2003-09-24 | 矽统科技股份有限公司 | 微浅绝缘沟槽结构制备法 |
US6645869B1 (en) * | 2002-09-26 | 2003-11-11 | Vanguard International Semiconductor Corporation | Etching back process to improve topographic planarization of a polysilicon layer |
US20030216026A1 (en) * | 2002-05-15 | 2003-11-20 | Institute Of Microelectronics | Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
US6472231B1 (en) * | 2001-01-29 | 2002-10-29 | Advanced Micro Devices, Inc. | Dielectric layer with treated top surface forming an etch stop layer and method of making the same |
US7071112B2 (en) * | 2002-10-21 | 2006-07-04 | Applied Materials, Inc. | BARC shaping for improved fabrication of dual damascene integrated circuit features |
CN100389488C (zh) * | 2003-12-30 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | 控制回蚀刻截面轮廓的方法和装置 |
-
2003
- 2003-12-30 CN CNB2003101229664A patent/CN100389488C/zh not_active Expired - Lifetime
-
2004
- 2004-02-06 US US10/773,565 patent/US7084054B2/en not_active Expired - Lifetime
-
2006
- 2006-07-31 US US11/497,552 patent/US7655561B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001176963A (ja) * | 1999-12-16 | 2001-06-29 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
CN1421915A (zh) * | 2001-11-30 | 2003-06-04 | 联华电子股份有限公司 | 双重镶嵌结构的制造方法 |
CN1444264A (zh) * | 2002-03-08 | 2003-09-24 | 矽统科技股份有限公司 | 微浅绝缘沟槽结构制备法 |
US20030216026A1 (en) * | 2002-05-15 | 2003-11-20 | Institute Of Microelectronics | Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC) |
US6645869B1 (en) * | 2002-09-26 | 2003-11-11 | Vanguard International Semiconductor Corporation | Etching back process to improve topographic planarization of a polysilicon layer |
Also Published As
Publication number | Publication date |
---|---|
US20070087561A1 (en) | 2007-04-19 |
US7084054B2 (en) | 2006-08-01 |
US20050142887A1 (en) | 2005-06-30 |
CN1635623A (zh) | 2005-07-06 |
US7655561B2 (en) | 2010-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11651993B2 (en) | Etch stop layer for semiconductor devices | |
US11854962B2 (en) | Via structure and methods thereof | |
US6972259B2 (en) | Method for forming openings in low dielectric constant material layer | |
JP5134363B2 (ja) | プラズマ加工システムによる基板エッチング法 | |
US7544602B2 (en) | Method and structure for ultra narrow crack stop for multilevel semiconductor device | |
US8993428B2 (en) | Structure and method to create a damascene local interconnect during metal gate deposition | |
US11935816B2 (en) | Conductive feature with non-uniform critical dimension and method of manufacturing the same | |
CN100389488C (zh) | 控制回蚀刻截面轮廓的方法和装置 | |
US20230386821A1 (en) | Interconnect structure for semiconductor devices | |
JP2001284451A (ja) | 二次元波形構造の製造方法 | |
US7026242B2 (en) | Method for filling a hole with a metal | |
US5966632A (en) | Method of forming borderless metal to contact structure | |
KR100629269B1 (ko) | 라인 패턴의 측부에 트랜치를 갖는 반도체 장치들 및 그형성방법들 | |
US11810816B2 (en) | Chemical mechanical polishing topography reset and control on interconnect metal lines | |
WO2001054191A1 (en) | Damascene structure and method for forming a damascene structure | |
CN114093813A (zh) | 一种用于半导体器件的接触孔的制作方法 | |
CN114664727A (zh) | 半导体结构的形成方法 | |
CN102479749A (zh) | 双镶嵌结构及其形成方法 | |
KR20050116424A (ko) | 콘택 플러그 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20080521 |
|
CX01 | Expiry of patent term |