CN100385686C - 一种多晶锗硅肖特基二极管及其制备方法 - Google Patents
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Abstract
本发明的多晶锗硅肖特基二极管包括自下而上依次迭置的硅衬底、二氧化硅层、镍硅化物或钴硅化物层、并列迭在镍硅化物或钴硅化物层上面的多晶锗硅层与欧姆接触电极以及迭在多晶锗硅层上面的势垒金属层。制作步骤如下:先在硅衬底上生长一层二氧化硅层,接着蒸镀一层金属镍,在镍上生长多晶锗硅层,涂光刻胶,并光刻,用锗硅选择性腐蚀溶液将未被光刻胶覆盖的锗硅腐蚀掉,最后蒸镀势垒金属层。本发明的多晶锗硅肖特基二极管中的镍或钴硅化物具有低的薄层电阻,它们能够与多晶锗硅形成欧姆接触,因而可以使肖特基二极管器件的电流方向与多晶锗硅的晶粒生长方向一致,减少晶界等缺陷对器件性能的影响,从而能够有效的提高器件的整流比以及降低反向漏电流。
Description
技术领域
本发明涉及半导体器件,具体说是关于多晶锗硅肖特基二极管原型器件及其制备方法。
背景技术
多晶锗硅肖特基二极管主要应用在一些并不需要很高的整流比或频率的场合,但是随着对器件要求越来越高,希望能够在不提高器件成本的情况下,获得高整流比的多晶锗硅肖特基二极管。为了改善器件特性,提高多晶锗硅薄膜的晶体质量以及改进器件的结构是关键。在本发明做出前,多晶锗硅薄膜主要采用固相结晶等方法制备,这类方法首先生长非晶锗硅薄膜,再在一定温度下长时间退火结晶。而制作肖特基二极管时,由于欧姆接触电极不能制作在绝缘衬底的下方,因而多数器件不得不采用横向器件结构,电流方向与多晶锗硅的生长方向相垂直,导致器件的整流特性降低,反向漏电流大。
发明内容
本发明的目的是提供一种具有高整流比的多晶锗硅肖特基二极管及其制备方法。
本发明的多晶锗硅肖特基二极管包括自下而上依次迭置的硅衬底、二氧化硅层、镍硅化物或钴硅化物层、并列迭在镍硅化物或钴硅化物层上面的多晶锗硅层与欧姆接触电极以及迭在多晶锗硅层上面的势垒金属层。
多晶锗硅肖特基二极管的制作方法,包括以下步骤:
1)将硅衬底清洗干净后放入热氧化炉中,通入纯氧于900~1200℃下热氧化一层0.2~0.3μm的二氧化硅层;
2)利用电子束蒸发在热氧化后的硅片上蒸镀一层厚为30~60nm的金属镍或金属钴;
3)将镀好镍或钴的样品放入超高真空化学气相沉积装置中,500~600℃下,通入纯硅源与以氢气为载气的锗烷,锗烷的体积含量为锗烷与氢气混和气体的10%,纯硅烷跟锗烷与氢气混和气体的流量比为5∶5,生长室压强10~70Pa,生长多晶锗硅薄膜,锗硅薄膜厚为0.5~1μm;
4)在步骤3)所得制品上涂上一层光刻胶,并光刻出窗口;
5)利用锗硅选择性腐蚀溶液,将未被光刻胶覆盖的锗硅腐蚀掉;
6)将腐蚀好的样品去掉光刻胶后,放入溅射设备中,在多晶锗硅层上溅射金属层,然后在350~450℃下进行合金化至少10分钟。
上述的锗硅选择性腐蚀液由体积浓度为6%的氢氟酸稀释溶液、体积浓度为30%的双氧水溶液和体积浓度为99.8%的乙酸配置而成,氢氟酸稀释溶液和双氧水溶液及乙酸的体积比为1∶2∶3。
溅射在多晶锗硅层上金属可以是铝,金或铜,优选铝。所述的硅源可以是纯度>99.999%的硅烷或乙硅烷;氧源的纯度>99.99%。
本发明的多晶锗硅肖特基二极管由于利用生长过程中形成的镍或钴硅化物具有低的薄层电阻,它们能够与多晶锗硅形成欧姆接触,因而可以使肖特基二极管器件的电流方向与多晶锗硅的晶粒生长方向一致,减少晶界等缺陷对器件性能的影响,从而能够有效的提高器件的整流比以及降低反向漏电流。
附图说明
图1是多晶锗硅肖特基二极管的结构示意图;
具体实施方式
以下结合具体实例进一步说明本发明。
参照图1,本发明的多晶锗硅肖特基二极管包括自下而上依次迭置的硅衬底1、二氧化硅层2、镍硅化物或钴硅化物层3、并列迭在镍硅化物或钴硅化物层3上面的多晶锗硅层4与欧姆接触电极6以及迭在多晶锗硅层4上面的势垒金属层5。
锗硅肖特基二极管的制作方法,步骤如下:
1)将硅衬底清洗干净后放入热氧化炉中,通入纯度为99.99%的氧于1100℃下热氧化一层0.2μm的二氧化硅层;
2)将所得制品放入电子束蒸发设备中,在热氧化后的硅片上蒸镀一层厚为30nm的金属镍;
3)将镀好镍的样品放入超高真空化学气相沉积装置中,530℃下,通入纯度为99.999%的硅烷与以氢气为载气的锗烷,锗烷的体积含量为锗烷与氢气混和气体的10%,纯硅烷跟锗烷与氢气混和气体的流量比为5∶5,生长室压强10Pa,生长多晶锗硅薄膜,锗硅薄膜厚为0.5μm;
4)将步骤3)所得制品上涂上一层光刻胶,利用标准光刻工艺,光刻出窗口;
5)利用锗硅选择性腐蚀溶液,将未被光刻胶覆盖的锗硅腐蚀掉;
锗硅选择性腐蚀液由体积浓度为6%的氢氟酸稀释溶液、体积浓度为30%的双氧水溶液和体积浓度为99.8%的乙酸配置而成,氢氟酸稀释溶液和双氧水溶液及乙酸的体积比为1∶2∶3。
6)将腐蚀好的样品去掉光刻胶后,放入溅射设备中,在多晶锗硅层上溅射厚为200nm的铝,然后在450℃下进行铝合金化处理10分钟。
根据器件要求,可以将步骤6)的铝电极进行反刻,去掉多余的金属铝。
Claims (4)
1.一种多晶锗硅肖特基二极管的制备方法,其特征是步骤如下:
1)将硅衬底清洗干净后放入热氧化炉中,通入纯氧于900~1200℃下热氧化一层0.2~0.3μm的二氧化硅层;
2)利用电子束蒸发在热氧化后的硅片上蒸镀一层厚为30~60nm的金属镍或金属钴;
3)将镀好镍或钴的样品放入超高真空化学气相沉积装置中,500~600℃下,通入纯硅源与以氢气为载气的锗烷,锗烷的体积含量为锗烷与氢气混和气体的10%,纯硅源跟锗烷与氢气混和气体的流量比为5∶5,生长室压强10~70Pa,生长多晶锗硅薄膜,锗硅薄膜厚为0.5~1μm;
4)在步骤3)所得制品上涂上一层光刻胶,并光刻出窗口;
5)利用锗硅选择性腐蚀溶液,将未被光刻胶覆盖的锗硅腐蚀掉;
6)去掉光刻胶后,放入溅射设备中,在多晶锗硅层上溅射厚度至少为100nm的金属层,然后在350~450℃下进行合金化至少10分钟。
2.根据权利要求1所述的多晶锗硅肖特基二极管的制作方法,其特征是锗硅选择性腐蚀溶液由体积浓度为6%的氢氟酸稀释溶液、体积浓度为30%的双氧水溶液和体积浓度为99.8%的乙酸配置而成,氢氟酸稀释溶液和双氧水溶液及乙酸的体积比为1∶2∶3。
3.根据权利要求1所述的多晶锗硅肖特基二极管的制作方法,其特征是所说的纯硅源是纯度>99.999%的硅烷或乙硅烷。
4.根据权利要求1所述的多晶锗硅肖特基二极管的制作方法,其特征是所说的纯氧的纯度>99.99%。
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CN101908511B (zh) * | 2010-07-27 | 2012-07-25 | 南京大学 | 一种金属衬底的氮化镓肖特基整流器及其制备方法 |
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US20050179104A1 (en) * | 2004-02-17 | 2005-08-18 | Emcore Corporation | Lateral conduction schottky diode with plural mesas |
CN2826700Y (zh) * | 2005-08-30 | 2006-10-11 | 浙江大学 | 一种多晶锗硅肖特基二极管 |
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US20050179104A1 (en) * | 2004-02-17 | 2005-08-18 | Emcore Corporation | Lateral conduction schottky diode with plural mesas |
CN2826700Y (zh) * | 2005-08-30 | 2006-10-11 | 浙江大学 | 一种多晶锗硅肖特基二极管 |
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US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
US10295745B2 (en) | 2015-01-05 | 2019-05-21 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
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