CN2826700Y - 一种多晶锗硅肖特基二极管 - Google Patents
一种多晶锗硅肖特基二极管 Download PDFInfo
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- CN2826700Y CN2826700Y CN 200520014504 CN200520014504U CN2826700Y CN 2826700 Y CN2826700 Y CN 2826700Y CN 200520014504 CN200520014504 CN 200520014504 CN 200520014504 U CN200520014504 U CN 200520014504U CN 2826700 Y CN2826700 Y CN 2826700Y
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 15
- 239000010941 cobalt Substances 0.000 claims abstract description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 17
- 206010010144 Completed suicide Diseases 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 10
- 229910021332 silicide Inorganic materials 0.000 abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910000078 germane Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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Abstract
本实用新型的多晶锗硅肖特基二极管,包括自下而上依次迭置的硅衬底、二氧化硅层、镍硅化物或钴硅化物层、并列迭在镍硅化物或钴硅化物层上面的多晶锗硅层与欧姆接触电极以及迭在多晶锗硅层上面的势垒金属层。该多晶锗硅肖特基二极管利用生长过程中形成的镍或钻硅化物具有低的薄层电阻,它们能够与多晶锗硅形成欧姆接触,多晶锗硅在镍硅化物或钴硅化物层上,因而可以有效地降低多晶锗硅肖特基二极管的串联电阻,从而能够有效的提高器件的整流比以及降低反向漏电流。
Description
技术领域
本实用新型涉及一种多晶锗硅肖特基二极管。
背景技术
多晶锗硅肖特基二极管主要应用在一些并不需要很高的整流比或频率的场合,但是随着对器件要求越来越高,希望能够在不提高器件成本的情况下,获得高整流比的多晶锗硅肖特基二极管。但是目前多数多晶锗硅肖特基二极管采用横向器件结构,导致器件的整流特性降低,反向漏电流大。
发明内容
本实用新型的目的是提供一种具有高整流比的多晶锗硅肖特基二极管。
本实用新型的多晶锗硅肖特基二极管包括自下而上依次迭置的硅衬底、二氧化硅层、镍硅化物或钴硅化物层、并列迭在镍硅化物或钴硅化物层上面的多晶锗硅层与欧姆接触电极以及迭在多晶锗硅层上面的势垒金属层。
多晶锗硅肖特基二极管的制作方法,包括以下步骤:
1)将硅衬底清洗干净后放入热氧化炉中,通入纯氧于900~1200℃下热氧化一层0.2~0.3μm的二氧化硅层;
2)利用电子束蒸发在热氧化后的硅片上蒸镀一层厚为30~60nm的金属镍或金属钴;
3)将镀好镍或钴的样品放入超高真空化学气相沉积装置中,500~600℃下,通入纯硅源与以氢气为载气的锗烷,锗烷的体积含量为锗烷与氢气混和气体的10%,纯硅烷跟锗烷与氢气混和气体的流量比为5∶5,生长室压强10~70Pa,生长多晶锗硅薄膜,锗硅薄膜厚为0.5~1μm;
4)在步骤3)所得制品上涂上一层光刻胶,并光刻出窗口;
5)利用锗硅选择性腐蚀溶液,将未被光刻胶覆盖的锗硅腐蚀掉;
6)将腐蚀好的样品去掉光刻胶后,放入溅射设备中,在多晶锗硅层上溅射金属层,然后在350~450℃下进行合金化至少10分钟。
上述的锗硅选择性腐蚀液由体积浓度为6%的氢氟酸稀释溶液、体积浓度为30%的双氧水溶液和体积浓度为99.8%的乙酸配置而成,氢氟酸稀释溶液和双氧水溶液及乙酸的体积比为1∶2∶3。
溅射在多晶锗硅层上金属可以是铝,金或铜,优选铝。所述的硅源可以是纯度>99.999%的硅烷或乙硅烷;氧源的纯度>99.99%。
本实用新型的多晶锗硅肖特基二极管由于利用生长过程中形成的镍或钴硅化物具有低的薄层电阻,它们能够与多晶锗硅形成欧姆接触,多晶锗硅在镍硅化物或钴硅化物层上,因而可以有效的降低多晶锗硅肖特基二极管的串联电阻,从而能够有效的提高器件的整流比以及降低反向漏电流。
附图说明
图1是多晶锗硅肖特基二极管的结构示意图;
具体实施方式
以下结合具体实例进一步说明本实用新型。
参照图1,本实用新型的多晶锗硅肖特基二极管包括自下而上依次迭置的硅衬底1、二氧化硅层2、镍硅化物或钴硅化物层3、并列迭在镍硅化物或钴硅化物层3上面的多晶锗硅层4与欧姆接触电极6以及迭在多晶锗硅层4上面的势垒金属层5。
锗硅肖特基二极管的制作方法,步骤如下:
1)将硅衬底清洗干净后放入热氧化炉中,通入纯度为99.99%的氧于1100℃下热氧化一层0.2μm的二氧化硅层;
2)将所得制品放入电子束蒸发设备中,在热氧化后的硅片上蒸镀一层厚为30nm的金属镍;
3)将镀好镍的样品放入超高真空化学气相沉积装置中,530℃下,通入纯度为99.999%的硅烷与以氢气为载气的锗烷,锗烷的体积含量为锗烷与氢气混和气体的10%,纯硅烷跟锗烷与氢气混和气体的流量比为5∶5,生长室压强10Pa,生长多晶锗硅薄膜,锗硅薄膜厚为0.5μm;
4)将步骤3)所得制品上涂上一层光刻胶,利用标准光刻工艺,光刻出窗口;
5)利用锗硅选择性腐蚀溶液,将未被光刻胶覆盖的锗硅腐蚀掉;
锗硅选择性腐蚀液由体积浓度为6%的氢氟酸稀释溶液、体积浓度为30%的双氧水溶液和体积浓度为99.8%的乙酸配置而成,氢氟酸稀释溶液和双氧水溶液及乙酸的体积比为1∶2∶3。
6)将腐蚀好的样品去掉光刻胶后,放入溅射设备中,在多晶锗硅层上溅射厚为200nm的铝,然后在450℃下进行铝合金化10分钟。
根据器件要求,可以将步骤6)的铝电极进行反刻,去掉多余的金属铝。
Claims (1)
1.一种多晶锗硅肖特基二极管,其特征在于包括自下而上依次迭置的硅衬底(1)、二氧化硅层(2)、镍硅化物或钴硅化物层(3)、并列迭在镍硅化物或钴硅化物层(3)上面的多晶锗硅层(4)与欧姆接触电极(6)以及迭在多晶锗硅层(4)上面的势垒金属层(5)。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100385686C (zh) * | 2005-08-30 | 2008-04-30 | 浙江大学 | 一种多晶锗硅肖特基二极管及其制备方法 |
CN102082182B (zh) * | 2009-11-26 | 2013-01-09 | 上海华虹Nec电子有限公司 | 应用锗硅工艺的多晶二极管及其制作方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100385686C (zh) * | 2005-08-30 | 2008-04-30 | 浙江大学 | 一种多晶锗硅肖特基二极管及其制备方法 |
CN102082182B (zh) * | 2009-11-26 | 2013-01-09 | 上海华虹Nec电子有限公司 | 应用锗硅工艺的多晶二极管及其制作方法 |
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