CN108611609B - 一种金属纳米线网络、及其制备方法 - Google Patents
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Abstract
本发明提供一种金属纳米线网络、及其制备方法,该纳米线包括由下至上排列的衬底和金属纳米线,其制备步骤包括S1)、将清洗干净的衬底放入溅射仪中,然后抽真空,在10‑2Pa时,通入氩气,溅射金属靶材,得到厚度为5‑30nm的非晶态的金属非晶纳米薄膜;S2)、将制备好的金属非晶纳米薄膜转移到管式退火炉中,先以0.4L/min的流量通入15min的纯度99.999%的氮气,排空管式炉中的氧气,然后将氮气的流量调整为0.1‑0.3L/min,按照2‑5℃/min的升温速率将管式退火炉中的温度升至300‑600℃,保温0.5‑20min,非晶态的金属非晶纳米薄膜在高温下缓慢结晶,薄膜缓慢收缩,在氮气的辅助下逐步形成结晶态的金属纳米线网络,本发明制备简单、适用范围广、导电性能好,金属纳米线网络的可控生长,制备成本低。
Description
技术领域
本发明涉及一种纳米材料技术领域,尤其是一种金属纳米线网络、及其制备方法。
背景技术
金属纳米线具有导电性能好、适用性广等优点,因而受到了人们的重视。随着人们生活水平的提高,人们对医疗健康产品提出了更高的要求,穿戴式医疗器件受到了人们的青睐,可穿戴式压力医疗器件要求柔软、轻便、舒适,而满足这些要求通常是有机材料,例如PDMS、PET等。有机薄膜通常是不导电的,为了获得良好的电学性能,通常会在PDMS材料中掺入金属纳米线、碳纳米管和石墨烯等。而金属纳米线可以作为纳米器件的电极材料,随着微纳加工技术的不断成熟,金属纳米线将会对纳米器件的发展产生积极的影响。
但是,目前制备金属纳米线一般采用腐蚀剥离法、外延法和水热法等,这些方法制备的金属纳米线在形成导电网络时,大多是通过物理接触而构建,这样构建的金属纳米线网络导电性能查,很难满足实际需求。
发明内容
针对现有技术的不足,本发明提供一种金属纳米线网络、及其制备方法。
本发明的技术方案为:一种金属纳米线网络,包括由下至上排列的衬底和金属纳米线,所述的金属纳米线的直径为150-950nm。
本发明还提供一种金属纳米线网络的制备方法,包括以下步骤:
S1)、将清洗干净的衬底放入溅射仪中,然后抽真空,在10-2Pa时,通入氩气,溅射金属靶材,得到厚度为5-30nm的非晶态的金属非晶纳米薄膜;
S2)、将制备好的金属非晶纳米薄膜转移到管式退火炉中,先以0.4L/min的流量通入15min的纯度99.999%的氮气,排空管式炉中的氧气,然后将氮气的流量调整为0.1-0.3L/min,按照2-5℃/min的升温速率将管式退火炉中的温度升至300-600℃,保温0.5-20min,非晶态的金属非晶纳米薄膜在高温下缓慢结晶,薄膜缓慢收缩,在氮气的辅助下逐步形成结晶态的金属纳米线网络。
进一步的,步骤S1)中,所述的金属靶材为Pt,Al,Au,Ag,Ni,Fe,Sn,Mn,W,Cu,Ti,Mo,Zn中的一种或者几种的组合,其纯度为99.9%以上。
进一步的,步骤S1)中,溅射条件为:氩气压强为1-0.1Pa,溅射电流为8-10A,溅射时间为30-120s。
进一步的,步骤S1)中,衬底为Si、蓝宝石、掺钇氧化锆(YSZ)中的任意一种。
本发明制备的金属纳米线网络应用于光电探测器、气敏探测器和太阳能电池。
进一步的,所述的光电探测器从下至上依次包括衬底层、金属纳米线网络、n型ZnO薄膜外延层、和电极。
进一步的,所述的气敏探测器从下至上依次包括衬底层、金属纳米线网络,ZnO纳米柱、电极。
进一步的,所述的太阳能电池从下至上依次包括衬底层、金属纳米线网络、ZnO薄膜层,和具有成分梯度的MgxZn1-xO缓冲层、n型掺硅MgxZn1-xO外延层、MgxZn1-xO多量子阱层、p型掺镁的MgxZn1-xO层。
本发明的有益效果为:制备简单、适用范围广、导电性能好,可以在多种衬底上实现各种金属纳米线网络的可控生长,金属纳米线网络的材质可以是Pt,Al,Au,Ag,Ni,Fe,Sn,Mn,W,Cu,Ti,Mo,Zn中的单一纯金属或者两种以上组成合金,有利于降低生产成本。
附图说明
图1为本发明的实施例1制备的金属Pt纳米线网络的扫描电子显微镜(SEM)图;
图2为本发明实施例1制备的金属Pt纳米线网络的X射线衍射(XRD)图谱;
图3为本发明实施例3光电探测器结构的截面示意图;
图4为本发明实施例4太阳能电池的截面示意图;
图5为本发明实施例5气敏探测器的截面示意图;
图中,11-衬底层,12金属Pt纳米线网络,13-n型ZnO薄膜外延层,14-电极,23-ZnO薄膜层,24-MgxZn1-xO缓冲层,25-n型掺硅MgxZn1-xO外延层,26-MgxZn1-xO多量子阱层,27-MgxZn1-xO层;33-ZnO纳米柱,34-电极。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明:
实施例1
一种金属纳米线网络的制备方法,包括以下步骤:
S1)、将清洗干净的衬底放入溅射仪中,然后抽真空,在10-2Pa时,通入氩气,溅射金属靶材Pt,得到厚度为8nm的非晶态的金属Pt非晶纳米薄膜,其中,溅射条件为:氩气压强为0.1Pa,溅射电流为10A,溅射时间为100s;
S2)、将制备好的金属Pt非晶纳米薄膜转移到管式退火炉中,先以0.4L/min的流量通入15min的纯度99.999%的氮气,排空管式炉中的氧气,然后将氮气的流量调整为0.2L/min,按照5℃/min的升温速率将管式退火炉中的温度升至600℃,保温2min,非晶态的金属非晶纳米薄膜在高温下缓慢结晶,薄膜缓慢收缩,在氮气的辅助下逐步形成结晶态的金属Pt纳米线网络。
本实施例制备的金属纳米线网络的直径为200-300nm,从图2中可以看出Pt的(111)(110)(220)特征衍射峰,说明本实施例制备的金属Pt纳米线网络的结晶状态较好,从图1中可以看出,金属Pt纳米线完全连接成为一个完整的网络,说明其具有较好的导电性。
实施例2
一种金属纳米线网络的制备方法,包括以下步骤:
S1)、将清洗干净的衬底放入溅射仪中,然后抽真空,在10-2Pa时,通入氩气,溅射金属靶材Au,得到厚度为10nm的非晶态的金属Au非晶纳米薄膜,其中,溅射条件为:氩气压强为0.1Pa,溅射电流为10A,溅射时间为80s;
S2)、将制备好的金属Pt非晶纳米薄膜转移到管式退火炉中,先以0.4L/min的流量通入15min的纯度99.999%的氮气,排空管式炉中的氧气,然后将氮气的流量调整为0.3L/min,按照2℃/min的升温速率将管式退火炉中的温度升至400℃,保温5min,非晶态的金属非晶纳米薄膜在高温下缓慢结晶,薄膜缓慢收缩,在氮气的辅助下逐步形成结晶态的金属Au纳米线网络。
实施例3
将实施例1制备的金属Pt纳米线用于制备光电探测器,通过在金属Pt纳米线继续外延生长ZnO并制备光电探测器,如图3所示,该光电探测器从下至上依次包括衬底层、金属Pt纳米线网络、n型ZnO薄膜外延层、和电极,其具体的制备过程为:在金属Pt纳米线网络上生长Al掺杂n型ZnO薄膜外延层,其厚度为600nm,其载流子浓度为3.75×1016cm-3。最后电子束蒸发形成欧姆接触和肖特基结。在此基础上通过在O2气氛下退火,提高了n型ZnO薄膜的载流子浓度和迁移率,所制备的ZnO紫外光电探测器在1V偏压下,暗电流仅为47pA,并且器件在1V偏压下,在359nm处响应度的最大值达到了0.637A/W,
实施例4
将实施例1制备的金属Pt纳米线用于制备ZnO基太阳能电池器件,通过在金属Pt纳米线继续外延生长并制备了ZnO基太阳能电池器件,如图4所示,该太阳能电池从下至上依次包括衬底层、金属Pt纳米线网络、ZnO薄膜层,和具有成分梯度的MgxZn1-xO缓冲层、n型掺硅MgxZn1-xO外延层、MgxZn1-xO多量子阱层、p型掺镁的MgxZn1-xO层;
具体的制备过程为:在金属Pt纳米线网络上生长高质量的ZnO薄膜,具有成分梯度的MgxZn1-xO缓冲层,x为0~0.25;然后生长n型掺硅MgxZn1-xO外延层,其厚度为3.25μm,其载流子的浓度为8.3×1018cm-3,
接着生长MgxZn1-xO多量子阱层,其厚度为150nm,周期数为15,其中Mg0.2Zn0.8O阱层为2nm,Mg0.08Zn0.92N垒层为8nm;
再生长Mg掺杂的p型MgxZn1-xO层,其厚度为300nm,其载流子浓度为2.7×1016cm-3,最后电子束蒸发形成欧姆接触。在此基础上通过在O2气氛下退火,提高了n型ZnO薄膜的载流子浓度和迁移率,所制备的InGaN太阳能电池器件室温下的光电转化效率为6.7%,短路光电流密度为31mA/cm2。
实施例5
将实施例1制备的金属Pt纳米线用于制备ZnO纳米柱气敏传感器,通过使用水热法在金属Pt纳米线上生长ZnO纳米柱并制备气敏传感器,如图5所示,其从下至上依次包括衬底层、金属Pt纳米线网络,ZnO纳米柱、电极;
具体制备过程为:在金属Pt纳米线网络上生长Mg掺杂p型ZnO纳米柱,纳米柱的直径为10nm,最后电子束蒸发形成电极。所制备的ZnO纳米柱气敏传感器探测精度高,对H2S可达到5ppm。
上述实施例和说明书中描述的只是说明本发明的原理和最佳实施例,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (7)
1.一种金属纳米线网络的制备方法,其中,所述的金属纳米线网络包括由下至上排列的衬底和金属纳米线,所述的金属纳米线的直径为150-950nm;
其特征在于,包括以下步骤:
S1)、将清洗干净的衬底放入溅射仪中,然后抽真空,在10-2Pa时,通入氩气,溅射金属靶材,得到厚度为5-30nm的非晶态的金属非晶纳米薄膜;
S2)、将制备好的金属非晶纳米薄膜转移到管式退火炉中,先以0.4L/min的流量通入15min的纯度99.999%的氮气,排空管式炉中的氧气,然后将氮气的流量调整为0.1-0.3L/min,按照2-5℃/min的升温速率将管式退火炉中的温度升至300-600℃,保温0.5-20min,非晶态的金属非晶纳米薄膜在高温下缓慢结晶,薄膜缓慢收缩,在氮气的辅助下逐步形成结晶态的金属纳米线网络;
所述的金属纳米线网络可用于光电探测器、气敏探测器或太阳能电池。
2.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:步骤S1)中,所述的金属靶材为纯度为99.9%以上的Pt,Al,Au,Ag,Ni,Fe,Sn,Mn,W,Cu,Ti,Mo,Zn中的一种或者几种的组合。
3.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:步骤S1)中,溅射条件为:氩气压强为1-0.1Pa,溅射电流为8-10A,溅射时间为30-120s。
4.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:步骤S1)中,衬底为Si、蓝宝石、掺钇氧化锆YSZ中的任意一种。
5.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:所述的光电探测器从下至上依次包括衬底层、金属纳米线网络、n型ZnO薄膜外延层和电极。
6.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:所述的气敏探测器从下至上依次包括衬底层、金属纳米线网络,ZnO纳米柱、电极。
7.根据权利要求1所述的一种金属纳米线网络的制备方法,其特征在于:太阳能电池从下至上依次包括衬底层、金属纳米线网络、ZnO薄膜层,和具有成分梯度的MgxZn1-xO缓冲层、n型掺硅MgxZn1-xO外延层、MgxZn1-xO多量子阱层、p型掺镁的MgxZn1-xO层。
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