CN109881246B - 一种大尺寸单晶β-氧化镓纳米带的制备方法 - Google Patents
一种大尺寸单晶β-氧化镓纳米带的制备方法 Download PDFInfo
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- CN109881246B CN109881246B CN201910261513.0A CN201910261513A CN109881246B CN 109881246 B CN109881246 B CN 109881246B CN 201910261513 A CN201910261513 A CN 201910261513A CN 109881246 B CN109881246 B CN 109881246B
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- gallium oxide
- gallium
- gallium nitride
- nitride film
- beta
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 115
- 239000013078 crystal Substances 0.000 title claims abstract description 79
- 239000002127 nanobelt Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000001301 oxygen Substances 0.000 claims abstract description 53
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 51
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000000137 annealing Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 30
- 230000003197 catalytic effect Effects 0.000 claims abstract description 29
- 239000002086 nanomaterial Substances 0.000 claims abstract description 24
- 239000002070 nanowire Substances 0.000 claims abstract description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 25
- 229910052697 platinum Inorganic materials 0.000 claims description 22
- 238000010926 purge Methods 0.000 claims description 22
- 239000002074 nanoribbon Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002135 nanosheet Substances 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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CN112490112A (zh) * | 2019-09-11 | 2021-03-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氧化镓薄膜及其异质外延生长方法与应用 |
CN114291839B (zh) * | 2022-01-07 | 2024-02-02 | 辽宁师范大学 | 一种低成本超细β-Ga2O3纳米线的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008100863A (ja) * | 2006-10-18 | 2008-05-01 | National Institute For Materials Science | 炭化ケイ素ナノ構造物とその製造方法 |
CN109056057A (zh) * | 2018-07-19 | 2018-12-21 | 复旦大学 | 一种大尺寸单晶氧化镓纳米片的制备方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008100863A (ja) * | 2006-10-18 | 2008-05-01 | National Institute For Materials Science | 炭化ケイ素ナノ構造物とその製造方法 |
CN109056057A (zh) * | 2018-07-19 | 2018-12-21 | 复旦大学 | 一种大尺寸单晶氧化镓纳米片的制备方法 |
Non-Patent Citations (3)
Title |
---|
催化剂对热蒸发CVD法生长β-Ga_2O_3纳米材料的结构及发光特性的影响;马海林等;《发光学报》;20130615(第06期);第716-720页 * |
氧化镓纳米带的制备研究;向杰等;《固体电子学研究与进展》;20021230(第04期);第449-453页 * |
氧流量对热蒸发CVD法生长β-Ga_2O_3纳米材料的结构及发光特性的影响;马海林等;《物理学报》;20081115(第11期);第7322-7326页 * |
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