CN100385674C - 发光体、发光元件和发光显示装置 - Google Patents
发光体、发光元件和发光显示装置 Download PDFInfo
- Publication number
- CN100385674C CN100385674C CNB028045777A CN02804577A CN100385674C CN 100385674 C CN100385674 C CN 100385674C CN B028045777 A CNB028045777 A CN B028045777A CN 02804577 A CN02804577 A CN 02804577A CN 100385674 C CN100385674 C CN 100385674C
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- China
- Prior art keywords
- electrode
- luminous
- light
- electric current
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Abstract
Description
基板 | 玻璃,树脂,石英 |
透明电极层 | ITO(铟锡氧化物,In氧化物和Zn氧化物的混合物) |
金属电极层 | MgAg,Al,LiAl |
电子传输层 | 喹啉醇铝络合物(Alq),PBD,TAZ,BND,噁二唑衍生物(OXD),OXD-7,聚对苯撑亚乙烯(PPV) |
发光层 | 喹啉醇铝络合物中添加红色荧光色素后的材料,喹啉醇铝络合物,铍苯并喹啉醇(ベリリウムベンゾキノリノ一ル)络合物,锌的噁唑络合物包含共轭类高分子有机化合物的前体和至少一种荧光物质的材料。作为前体,例如聚亚乙烯基苯撑(ボリビニレンフエニレン)或其衍生物。作为荧光色素,若丹明B,二芪基联苯(ジスチルビフエニル),香豆素,四苯基丁二烯,喹吖酮以及它们的衍生物 |
空穴注入层 | 三苯基二胺衍生物(TPD),铜酞菁等卟啉化合物,α-NPD |
阳极缓冲层 | CuPc,聚苯胺,聚噻吩 |
保护层 | Al氧化物,Al氮化物,Si氧化物,Si氮化物或它们的混合物 |
开关元件 | 晶体管 |
电流施加元件 | 晶体管 |
开关用的布线,电流施加用的布线,第二开关布线,公共布线,接地布线 | Al,Cu,Ta,Ru,WSi |
源·漏电极,栅电极 | Al,Cu,Ta,Ru,Wsi |
栅极绝缘膜,第一层间绝缘膜,第二层间绝缘膜,缓冲层 | Al氧化物,Ak氮化物,Si氧化物,Si氮化物或它们的混合物 |
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001028721A JP4292245B2 (ja) | 2001-02-05 | 2001-02-05 | 発光体、発光素子、及び発光表示装置 |
JP28721/2001 | 2001-02-05 | ||
JP28721/01 | 2001-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1491526A CN1491526A (zh) | 2004-04-21 |
CN100385674C true CN100385674C (zh) | 2008-04-30 |
Family
ID=18893176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028045777A Expired - Lifetime CN100385674C (zh) | 2001-02-05 | 2002-02-04 | 发光体、发光元件和发光显示装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7495387B2 (zh) |
JP (1) | JP4292245B2 (zh) |
CN (1) | CN100385674C (zh) |
WO (1) | WO2002063928A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4292245B2 (ja) * | 2001-02-05 | 2009-07-08 | 三星モバイルディスプレイ株式會社 | 発光体、発光素子、及び発光表示装置 |
US7327080B2 (en) * | 2002-03-20 | 2008-02-05 | Disanto Frank J | Hybrid active matrix thin-film transistor display |
JP2006245031A (ja) * | 2005-02-28 | 2006-09-14 | Casio Comput Co Ltd | 薄膜トランジスタパネル |
JP5117667B2 (ja) * | 2005-02-28 | 2013-01-16 | カシオ計算機株式会社 | 薄膜トランジスタパネル |
FR2934417B1 (fr) | 2008-07-25 | 2010-11-05 | Centre Nat Rech Scient | Composants electroniques a encapsulation integree |
US8766269B2 (en) * | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
US8791487B2 (en) * | 2012-09-24 | 2014-07-29 | International Business Machines Corporation | Zinc oxide-containing transparent conductive electrode |
KR102453420B1 (ko) * | 2015-04-30 | 2022-10-13 | 삼성디스플레이 주식회사 | 투명 유기 발광 표시 장치 및 이의 제조방법 |
CN109791968A (zh) | 2016-07-26 | 2019-05-21 | 克利公司 | 发光二极管、组件和相关方法 |
US11121298B2 (en) * | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
CN112970130B (zh) * | 2018-10-30 | 2024-02-09 | 夏普株式会社 | 发光元件、发光元件的制造方法 |
US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
KR20240014470A (ko) | 2021-05-28 | 2024-02-01 | 가부시키가이샤 큐럭스 | 톱 이미션 방식의 유기 일렉트로 루미네선스 소자 및 그 설계 방법 |
Citations (4)
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---|---|---|---|---|
CN1239395A (zh) * | 1998-06-17 | 1999-12-22 | Lg电子株式会社 | 制造有机场致发光显示板的方法 |
JP2000173766A (ja) * | 1998-09-30 | 2000-06-23 | Sanyo Electric Co Ltd | 表示装置 |
CN1279519A (zh) * | 1999-06-23 | 2001-01-10 | 株式会社半导体能源研究所 | 电致发光显示器件及电子装置 |
CN1282064A (zh) * | 1999-07-23 | 2001-01-31 | 株式会社半导体能源研究所 | 电致发光显示器件及其制造方法 |
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JPH01124284A (ja) | 1987-11-10 | 1989-05-17 | Akio Miura | プリント基板の製造方法 |
FR2645998B1 (fr) * | 1989-04-12 | 1991-06-07 | France Etat | Ecran d'affichage electroluminescent a memoire et a configuration particuliere d'electrodes |
US5652067A (en) * | 1992-09-10 | 1997-07-29 | Toppan Printing Co., Ltd. | Organic electroluminescent device |
US5589733A (en) * | 1994-02-17 | 1996-12-31 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Electroluminescent element including a dielectric film of tantalum oxide and an oxide of either indium, tin, or zinc |
JPH0864931A (ja) | 1994-08-18 | 1996-03-08 | Daishinku Co | 電子部品の微細電極形成方法 |
JP3578417B2 (ja) | 1994-10-21 | 2004-10-20 | 出光興産株式会社 | 有機elデバイス |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
DE19500912A1 (de) * | 1995-01-13 | 1996-07-18 | Basf Ag | Elektrolumineszierende Anordnung |
JPH0934130A (ja) | 1995-07-19 | 1997-02-07 | Nitto Denko Corp | レジストの除去方法とこれに用いる接着シ―ト類 |
JP4477150B2 (ja) * | 1996-01-17 | 2010-06-09 | 三星モバイルディスプレイ株式會社 | 有機薄膜el素子 |
JP2000512428A (ja) * | 1996-06-12 | 2000-09-19 | ザ トラスティーズ オブ プリンストン ユニバーシテイ | 有機多色表示器製造のための薄膜パターン化 |
JP3457819B2 (ja) | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
JPH10223368A (ja) | 1997-01-31 | 1998-08-21 | Hokuriku Electric Ind Co Ltd | 有機el素子とその製造方法 |
JP3434158B2 (ja) | 1997-02-12 | 2003-08-04 | 日立金属株式会社 | エッチング性に優れたFe−Ni系シャドウマスク素材およびプレス成形性に優れたFe−Ni系シャドウマスク材 |
EP0936734A4 (en) | 1997-07-28 | 2000-10-25 | Toshiba Kk | SURFACE ACOUSTIC WAVE PROCESSING DEVICE AND MANUFACTURING METHOD THEREOF |
JPH11176720A (ja) | 1997-12-10 | 1999-07-02 | Nikon Corp | 電子ビーム露光装置 |
US6057048A (en) * | 1998-10-01 | 2000-05-02 | Xerox Corporation | Electroluminescent (EL) devices |
JP4243880B2 (ja) | 1998-11-19 | 2009-03-25 | 日立化成工業株式会社 | 配線部材の製造法 |
JP2000227770A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4472073B2 (ja) * | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
US6833668B1 (en) * | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
JP3809758B2 (ja) * | 1999-10-28 | 2006-08-16 | ソニー株式会社 | 表示装置及び表示装置の製造方法 |
JP4292245B2 (ja) * | 2001-02-05 | 2009-07-08 | 三星モバイルディスプレイ株式會社 | 発光体、発光素子、及び発光表示装置 |
JP2002252088A (ja) * | 2001-02-27 | 2002-09-06 | Nec Corp | 発光体、発光素子部、およびそれを用いた発光表示装置 |
US6657378B2 (en) * | 2001-09-06 | 2003-12-02 | The Trustees Of Princeton University | Organic photovoltaic devices |
US20050023972A1 (en) * | 2003-07-29 | 2005-02-03 | Lewandowski Mark A. | Method for printing electroluminescent lamps |
-
2001
- 2001-02-05 JP JP2001028721A patent/JP4292245B2/ja not_active Expired - Lifetime
-
2002
- 2002-02-04 WO PCT/JP2002/000882 patent/WO2002063928A1/ja active Application Filing
- 2002-02-04 CN CNB028045777A patent/CN100385674C/zh not_active Expired - Lifetime
- 2002-02-04 US US10/467,081 patent/US7495387B2/en not_active Expired - Lifetime
-
2008
- 2008-09-23 US US12/236,027 patent/US8410687B2/en not_active Expired - Lifetime
-
2013
- 2013-03-19 US US13/847,264 patent/US8664850B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1239395A (zh) * | 1998-06-17 | 1999-12-22 | Lg电子株式会社 | 制造有机场致发光显示板的方法 |
JP2000173766A (ja) * | 1998-09-30 | 2000-06-23 | Sanyo Electric Co Ltd | 表示装置 |
CN1279519A (zh) * | 1999-06-23 | 2001-01-10 | 株式会社半导体能源研究所 | 电致发光显示器件及电子装置 |
CN1282064A (zh) * | 1999-07-23 | 2001-01-31 | 株式会社半导体能源研究所 | 电致发光显示器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8410687B2 (en) | 2013-04-02 |
US20090015155A1 (en) | 2009-01-15 |
WO2002063928A1 (fr) | 2002-08-15 |
US7495387B2 (en) | 2009-02-24 |
US20040245937A1 (en) | 2004-12-09 |
US8664850B2 (en) | 2014-03-04 |
US20130214306A1 (en) | 2013-08-22 |
JP4292245B2 (ja) | 2009-07-08 |
JP2002231459A (ja) | 2002-08-16 |
CN1491526A (zh) | 2004-04-21 |
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Owner name: SAMSUNG SDI CO., LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20040702 |
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Effective date of registration: 20090109 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung SDI Co., Ltd. |
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