CN100350627C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN100350627C
CN100350627C CNB991202597A CN99120259A CN100350627C CN 100350627 C CN100350627 C CN 100350627C CN B991202597 A CNB991202597 A CN B991202597A CN 99120259 A CN99120259 A CN 99120259A CN 100350627 C CN100350627 C CN 100350627C
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CN
China
Prior art keywords
film
nickel
tft
substrate
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB991202597A
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English (en)
Chinese (zh)
Other versions
CN1258104A (zh
Inventor
张宏勇
高山彻
竹村保彦
宫永昭治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1258104A publication Critical patent/CN1258104A/zh
Application granted granted Critical
Publication of CN100350627C publication Critical patent/CN100350627C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CNB991202597A 1993-05-26 1994-05-26 半导体器件 Expired - Lifetime CN100350627C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP147001/93 1993-05-26
JP14700193 1993-05-26
JP147001/1993 1993-05-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN94107606A Division CN1058584C (zh) 1993-05-26 1994-05-26 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1258104A CN1258104A (zh) 2000-06-28
CN100350627C true CN100350627C (zh) 2007-11-21

Family

ID=15420338

Family Applications (4)

Application Number Title Priority Date Filing Date
CN94107606A Expired - Fee Related CN1058584C (zh) 1993-05-26 1994-05-26 半导体器件及其制造方法
CNB991202600A Expired - Lifetime CN100379017C (zh) 1993-05-26 1994-05-26 半导体器件
CNB991202597A Expired - Lifetime CN100350627C (zh) 1993-05-26 1994-05-26 半导体器件
CNB2006101030033A Expired - Fee Related CN100501980C (zh) 1993-05-26 1994-05-26 半导体器件及其制造方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN94107606A Expired - Fee Related CN1058584C (zh) 1993-05-26 1994-05-26 半导体器件及其制造方法
CNB991202600A Expired - Lifetime CN100379017C (zh) 1993-05-26 1994-05-26 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2006101030033A Expired - Fee Related CN100501980C (zh) 1993-05-26 1994-05-26 半导体器件及其制造方法

Country Status (3)

Country Link
KR (1) KR0180573B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (4) CN1058584C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW281786B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985740A (en) * 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
CN100485928C (zh) * 2000-09-29 2009-05-06 三洋电机株式会社 半导体器件以及显示装置
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP3992976B2 (ja) 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10217876A1 (de) * 2002-04-22 2003-11-06 Infineon Technologies Ag Verfahren zur Herstellung dünner metallhaltiger Schichten mit geringem elektrischen Widerstand
EP1509948B1 (en) * 2002-05-22 2013-11-06 TPO Hong Kong Holding Limited Manufacture of active matrix display devices
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
KR100514181B1 (ko) 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
CN101140940A (zh) * 2006-08-18 2008-03-12 株式会社液晶先端技术开发中心 电子装置、显示装置、接口电路和差分放大装置
CN101419986B (zh) * 2008-12-05 2011-05-11 北京时代民芯科技有限公司 一种防边缘漏电的双边缘抗总剂量辐射加固版图结构
TWI543358B (zh) * 2014-01-13 2016-07-21 友達光電股份有限公司 顯示面板的畫素

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device
EP0178447A2 (en) * 1984-10-09 1986-04-23 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
EP0342925A2 (en) * 1988-05-17 1989-11-23 Seiko Epson Corporation Active matrix panel
JPH0227320A (ja) * 1988-07-18 1990-01-30 Hitachi Ltd 薄膜半導体表示装置とその製造方法
JPH0252419A (ja) * 1988-08-16 1990-02-22 Sony Corp 半導体基板の製造方法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS61102628A (ja) * 1984-10-25 1986-05-21 Sony Corp 液晶表示装置
JP2655865B2 (ja) * 1988-03-16 1997-09-24 株式会社日立製作所 液晶表示装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device
EP0178447A2 (en) * 1984-10-09 1986-04-23 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
EP0342925A2 (en) * 1988-05-17 1989-11-23 Seiko Epson Corporation Active matrix panel
JPH0227320A (ja) * 1988-07-18 1990-01-30 Hitachi Ltd 薄膜半導体表示装置とその製造方法
JPH0252419A (ja) * 1988-08-16 1990-02-22 Sony Corp 半導体基板の製造方法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films

Also Published As

Publication number Publication date
KR0180573B1 (ko) 1999-03-20
CN1881568A (zh) 2006-12-20
TW281786B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-07-21
CN1058584C (zh) 2000-11-15
KR940027187A (ko) 1994-12-10
CN1258102A (zh) 2000-06-28
CN1258104A (zh) 2000-06-28
CN100501980C (zh) 2009-06-17
CN100379017C (zh) 2008-04-02
CN1101167A (zh) 1995-04-05

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Expiration termination date: 20140526

Granted publication date: 20071121