CN100347828C - 带有用于降低浆液消耗的凹槽排列的研磨垫 - Google Patents

带有用于降低浆液消耗的凹槽排列的研磨垫 Download PDF

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Publication number
CN100347828C
CN100347828C CNB2004100929809A CN200410092980A CN100347828C CN 100347828 C CN100347828 C CN 100347828C CN B2004100929809 A CNB2004100929809 A CN B2004100929809A CN 200410092980 A CN200410092980 A CN 200410092980A CN 100347828 C CN100347828 C CN 100347828C
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China
Prior art keywords
grinding
grooves
groove
milling zone
center
Prior art date
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Expired - Fee Related
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CNB2004100929809A
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English (en)
Chinese (zh)
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CN1617307A (zh
Inventor
格雷戈里·P·马尔多奈伊
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN1617307A publication Critical patent/CN1617307A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB2004100929809A 2003-11-13 2004-11-12 带有用于降低浆液消耗的凹槽排列的研磨垫 Expired - Fee Related CN100347828C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/712,362 2003-11-13
US10/712,362 US7125318B2 (en) 2003-11-13 2003-11-13 Polishing pad having a groove arrangement for reducing slurry consumption

Publications (2)

Publication Number Publication Date
CN1617307A CN1617307A (zh) 2005-05-18
CN100347828C true CN100347828C (zh) 2007-11-07

Family

ID=34435666

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100929809A Expired - Fee Related CN100347828C (zh) 2003-11-13 2004-11-12 带有用于降低浆液消耗的凹槽排列的研磨垫

Country Status (7)

Country Link
US (1) US7125318B2 (enExample)
EP (1) EP1533076B1 (enExample)
JP (1) JP4689240B2 (enExample)
KR (1) KR101109160B1 (enExample)
CN (1) CN100347828C (enExample)
DE (1) DE602004007598T2 (enExample)
TW (1) TWI337564B (enExample)

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KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US9107568B2 (en) 2005-06-17 2015-08-18 Intellectual Ventures Ii Llc Capsule type endoscope and method for fabricating the same
CN101326235B (zh) * 2005-12-09 2012-04-04 三井化学株式会社 振动控制用材料、振动控制用成形体和振动控制用多层叠层体
JP2007201449A (ja) * 2005-12-28 2007-08-09 Jsr Corp 化学機械研磨パッドおよび化学機械研磨方法
US7267610B1 (en) 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP2008062367A (ja) * 2006-09-11 2008-03-21 Nec Electronics Corp 研磨装置、研磨パッド、研磨方法
JP4909706B2 (ja) * 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
US7520798B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7520796B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7311590B1 (en) 2007-01-31 2007-12-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to retain slurry on the pad texture
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI449597B (zh) * 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法
TWI535527B (zh) * 2009-07-20 2016-06-01 智勝科技股份有限公司 研磨方法、研磨墊與研磨系統
US9211628B2 (en) * 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
JP6065208B2 (ja) * 2012-12-25 2017-01-25 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
CN105058224B (zh) * 2015-07-23 2017-07-14 福州恒光光电有限公司 一种多晶片研磨装置及其研磨方法
US10618141B2 (en) 2015-10-30 2020-04-14 Applied Materials, Inc. Apparatus for forming a polishing article that has a desired zeta potential
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10861702B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
US10857648B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN110153873B (zh) * 2018-02-14 2021-06-11 台湾积体电路制造股份有限公司 研磨设备、检测装置以及半导体基板的研磨方法
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
CN109623554A (zh) * 2019-01-08 2019-04-16 天津中环领先材料技术有限公司 一种降低硅片边缘粗糙度的边抛工艺
CN112091817B (zh) * 2020-09-08 2022-06-17 中国航发贵州黎阳航空动力有限公司 一种薄壁环形零件端面研磨工具
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN114473857B (zh) * 2021-12-29 2023-03-14 湖北鼎汇微电子材料有限公司 一种抛光垫及半导体器件的制造方法
CN115741457A (zh) * 2022-11-18 2023-03-07 京东方科技集团股份有限公司 研磨盘、清洁机构及其清洁方法
CN117245542B (zh) * 2023-11-17 2024-01-23 苏州博宏源机械制造有限公司 晶圆双面抛光设备及工艺

Citations (5)

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Publication number Priority date Publication date Assignee Title
US5527215A (en) * 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
EP1114697A2 (en) * 1999-12-13 2001-07-11 Applied Materials, Inc. Apparatus and method for controlled delivery of slurry to a region of a polishing device

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US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JP3149807B2 (ja) * 1997-01-08 2001-03-26 三菱マテリアル株式会社 ウェーハ研磨装置
JP2000000755A (ja) * 1998-06-16 2000-01-07 Sony Corp 研磨パッド及び研磨方法
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
KR20020022198A (ko) * 2000-09-19 2002-03-27 윤종용 표면에 비 선형 트랙이 형성된 연마 패드를 구비하는화학적 기계적 연마 장치
KR20030015567A (ko) * 2001-08-16 2003-02-25 에스케이에버텍 주식회사 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드
JP2003209077A (ja) * 2002-01-15 2003-07-25 Mitsubishi Electric Corp Ｃｍｐ装置及び半導体装置
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
JP4563025B2 (ja) * 2003-12-19 2010-10-13 東洋ゴム工業株式会社 Ｃｍｐ用研磨パッド、及びそれを用いた研磨方法
US7059949B1 (en) * 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having an overlapping stepped groove arrangement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527215A (en) * 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
EP1114697A2 (en) * 1999-12-13 2001-07-11 Applied Materials, Inc. Apparatus and method for controlled delivery of slurry to a region of a polishing device
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad

Also Published As

Publication number Publication date
US20050106878A1 (en) 2005-05-19
JP2005150744A (ja) 2005-06-09
DE602004007598T2 (de) 2008-04-17
CN1617307A (zh) 2005-05-18
TW200531783A (en) 2005-10-01
KR101109160B1 (ko) 2012-02-24
EP1533076A1 (en) 2005-05-25
KR20050046621A (ko) 2005-05-18
JP4689240B2 (ja) 2011-05-25
DE602004007598D1 (de) 2007-08-30
US7125318B2 (en) 2006-10-24
EP1533076B1 (en) 2007-07-18
TWI337564B (en) 2011-02-21

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