KR101109160B1 - 슬러리 소모량을 감소시키기 위한 홈 배열을 갖는 연마 패드 - Google Patents

슬러리 소모량을 감소시키기 위한 홈 배열을 갖는 연마 패드 Download PDF

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Publication number
KR101109160B1
KR101109160B1 KR1020040092501A KR20040092501A KR101109160B1 KR 101109160 B1 KR101109160 B1 KR 101109160B1 KR 1020040092501 A KR1020040092501 A KR 1020040092501A KR 20040092501 A KR20040092501 A KR 20040092501A KR 101109160 B1 KR101109160 B1 KR 101109160B1
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South Korea
Prior art keywords
polishing
grooves
region
slurry
groove
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KR20050046621A (ko
Inventor
멀다우니그레고리피.
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020040092501A 2003-11-13 2004-11-12 슬러리 소모량을 감소시키기 위한 홈 배열을 갖는 연마 패드 Expired - Lifetime KR101109160B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/712,362 US7125318B2 (en) 2003-11-13 2003-11-13 Polishing pad having a groove arrangement for reducing slurry consumption
US10/712,362 2003-11-13

Publications (2)

Publication Number Publication Date
KR20050046621A KR20050046621A (ko) 2005-05-18
KR101109160B1 true KR101109160B1 (ko) 2012-02-24

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KR1020040092501A Expired - Lifetime KR101109160B1 (ko) 2003-11-13 2004-11-12 슬러리 소모량을 감소시키기 위한 홈 배열을 갖는 연마 패드

Country Status (7)

Country Link
US (1) US7125318B2 (enExample)
EP (1) EP1533076B1 (enExample)
JP (1) JP4689240B2 (enExample)
KR (1) KR101109160B1 (enExample)
CN (1) CN100347828C (enExample)
DE (1) DE602004007598T2 (enExample)
TW (1) TWI337564B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101456165B (zh) * 2003-09-26 2011-06-15 信越半导体股份有限公司 研磨布及使用该研磨布的基板的制造方法
US6958002B1 (en) * 2004-07-19 2005-10-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with flow modifying groove network
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US9107568B2 (en) 2005-06-17 2015-08-18 Intellectual Ventures Ii Llc Capsule type endoscope and method for fabricating the same
KR20080085860A (ko) * 2005-12-09 2008-09-24 미쓰이 가가쿠 가부시키가이샤 진동 제어용 재료, 진동 제어용 성형체 및 진동 제어용다층 적층체
JP2007201449A (ja) * 2005-12-28 2007-08-09 Jsr Corp 化学機械研磨パッドおよび化学機械研磨方法
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
US7267610B1 (en) * 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
JP2008062367A (ja) * 2006-09-11 2008-03-21 Nec Electronics Corp 研磨装置、研磨パッド、研磨方法
JP4909706B2 (ja) * 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
US7311590B1 (en) 2007-01-31 2007-12-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to retain slurry on the pad texture
US7520796B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7520798B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI449597B (zh) * 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法
TWI535527B (zh) * 2009-07-20 2016-06-01 智勝科技股份有限公司 研磨方法、研磨墊與研磨系統
US9211628B2 (en) * 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
JP6065208B2 (ja) * 2012-12-25 2017-01-25 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN105058224B (zh) * 2015-07-23 2017-07-14 福州恒光光电有限公司 一种多晶片研磨装置及其研磨方法
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10857648B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US10861702B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN110153873B (zh) * 2018-02-14 2021-06-11 台湾积体电路制造股份有限公司 研磨设备、检测装置以及半导体基板的研磨方法
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
CN109623554A (zh) * 2019-01-08 2019-04-16 天津中环领先材料技术有限公司 一种降低硅片边缘粗糙度的边抛工艺
CN112091817B (zh) * 2020-09-08 2022-06-17 中国航发贵州黎阳航空动力有限公司 一种薄壁环形零件端面研磨工具
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN114473857B (zh) * 2021-12-29 2023-03-14 湖北鼎汇微电子材料有限公司 一种抛光垫及半导体器件的制造方法
CN115741457A (zh) * 2022-11-18 2023-03-07 京东方科技集团股份有限公司 研磨盘、清洁机构及其清洁方法
CN117245542B (zh) * 2023-11-17 2024-01-23 苏州博宏源机械制造有限公司 晶圆双面抛光设备及工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990012A (en) 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
EP1114697A2 (en) 1999-12-13 2001-07-11 Applied Materials, Inc. Apparatus and method for controlled delivery of slurry to a region of a polishing device
KR20020022198A (ko) * 2000-09-19 2002-03-27 윤종용 표면에 비 선형 트랙이 형성된 연마 패드를 구비하는화학적 기계적 연마 장치
KR20030015567A (ko) * 2001-08-16 2003-02-25 에스케이에버텍 주식회사 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5527215A (en) * 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JP3149807B2 (ja) * 1997-01-08 2001-03-26 三菱マテリアル株式会社 ウェーハ研磨装置
JP2000000755A (ja) * 1998-06-16 2000-01-07 Sony Corp 研磨パッド及び研磨方法
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
US6241596B1 (en) 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
JP2003209077A (ja) * 2002-01-15 2003-07-25 Mitsubishi Electric Corp Ｃｍｐ装置及び半導体装置
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
JP4563025B2 (ja) * 2003-12-19 2010-10-13 東洋ゴム工業株式会社 Ｃｍｐ用研磨パッド、及びそれを用いた研磨方法
US7059949B1 (en) * 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having an overlapping stepped groove arrangement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990012A (en) 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
EP1114697A2 (en) 1999-12-13 2001-07-11 Applied Materials, Inc. Apparatus and method for controlled delivery of slurry to a region of a polishing device
KR20020022198A (ko) * 2000-09-19 2002-03-27 윤종용 표면에 비 선형 트랙이 형성된 연마 패드를 구비하는화학적 기계적 연마 장치
KR20030015567A (ko) * 2001-08-16 2003-02-25 에스케이에버텍 주식회사 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드

Also Published As

Publication number Publication date
US20050106878A1 (en) 2005-05-19
KR20050046621A (ko) 2005-05-18
TWI337564B (en) 2011-02-21
JP4689240B2 (ja) 2011-05-25
TW200531783A (en) 2005-10-01
JP2005150744A (ja) 2005-06-09
DE602004007598T2 (de) 2008-04-17
US7125318B2 (en) 2006-10-24
CN100347828C (zh) 2007-11-07
DE602004007598D1 (de) 2007-08-30
EP1533076B1 (en) 2007-07-18
EP1533076A1 (en) 2005-05-25
CN1617307A (zh) 2005-05-18

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