CN100347266C - 发黄光卤代磷酸盐磷光体及引入该发黄光卤代磷酸盐磷光体的光源 - Google Patents
发黄光卤代磷酸盐磷光体及引入该发黄光卤代磷酸盐磷光体的光源 Download PDFInfo
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Abstract
本发明披露了一种卤代磷酸盐发光材料,其由铕离子及锰离子共活化,并具有通式(Ca,Sr,Ba,Mg)5(PO4)3:EU2+;Mn2+。锰的包合物将发射峰移动到更长的波长,并且,因而有利于产生亮黄-橙色光线。通过设置卤代磷酸盐发光材料产生白光源,可选地,将发蓝光磷光体设置在近紫外光/蓝光发光二极管的附近。可用于本发明的具体实施例中的发蓝光磷光体为Sr4Al14O25:Eu2+、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、和Sr2Si3O62SrCl2:Eu2+。
Description
技术领域
本发明涉及发黄光卤代磷酸盐磷光体。具体而言,本发明涉及为人所青睐的磷酸盐磷光体,其利用Eu2+及Mn2+活化可发出黄光,该黄光由波长范围在近紫外光(“近UV”)至蓝光的电磁辐射激发。本发明还涉及引入这种磷酸盐磷光体以产生白光的光源。
背景技术
磷光体(phosphor)是一种发光材料,其在电磁光谱的一部分吸收辐射能,而在电磁光谱的另一部分发射能量。一类重要的磷光体是具有很高化学纯度且在其中加入少量其他元素(所谓的“活化剂”)作为控制成分使其转化成有效的荧光材料的结晶无机化合物。利用活化剂和主要无机化合物的适当组合,可以控制发出光线的颜色。最有用且公知的磷光体在电磁光谱的可见光部分对由处于可见光范围之外的电磁辐射进行的激发作出响应而发出辐射。已经将公知的磷光体用于水银蒸气放电灯以将由受激水银蒸气发射的紫外(“UV”)辐射转化成可见光。其他的磷光体能够基于由电子(用于阴极射线管)或x射线(例如,在x-射线探测系统中的闪烁器)激发而发出可见光。
由于激发辐射的波长与射出的辐射窄频不同而使得利用磷光体的照明装置的效率提高。因此,为了寻求效率改善的白光源,人们已经努力致力于寻找具有比UV辐射更长波长的受激辐射源以及对那些波长作出响应的磷光体。最近在发光二极管(“LED”)技术上的进展已经带来了在近紫外光至蓝光范围发光的有效发光二极管。在本文中用到的术语“发光二极管”还包括激光二极管。在本文中用到的术语“近紫外光”是指波长范围为从约315nm至约410nm的紫外辐射。这些发光二极管在近紫外光至蓝光范围射出的辐射在下文中称为“紫外光/蓝光发光二极管”。如在本文中所用到的,紫外光/蓝光发光二极管可以发出辐射,其波长在近紫外光范围、在蓝光范围或在从近紫外光至蓝光的较宽的范围。提供可以由从这些紫外光/蓝光发光二极管辐射源射出的辐射来激发从而可以灵活地用于产生各种颜色的发光二极管的磷光体的范围,这将是照明技术的一种进步。这样的磷光体若与来自紫外光/蓝光发光二极管的发射进行组合,则可以提供有效并且持续时间更长消耗更少电力的照明装置。
最近已经出现很多基于铟、铝、及镓的氮化物组合的近紫外光/蓝光发光二极管。例如,美国专利第5,777,350号披露了包括InGa及p-型及n-型AlGaN多层的发光二极管,其在波长范围从约380nm至约420nm发光。一种发蓝光波长的InGaN型的发光二极管与一种用铈(“YAG:Ce”)活化的发黄光钇铝石榴石磷光体涂层组合以产生白光,并且在美国专利第5,998,925号中予以披露。类似地,美国专利第6,066,861号披露了一种用铽和/或铈活化的钇铝石榴石磷光体,其中钇可以用Ca和/或Sr来代替、铝用Ga和/或Si来代替、以及氧用S来代替,该磷光体可以用作波长转换层的成分用于发蓝光发光二极管。YAG:Ce及其变体发射一种宽光谱的黄光。尽管用于白光装置的所需的主要部分可以通过发光二极管基的装置来填充,但是将紫外光/蓝光发光二极管与磷光体进行组合的能力已经被限制,这是因为人们只了解钇铝石榴石磷光体及其次要变体是发黄光的磷光体,其是在蓝光范围由辐射激发的。在某种程度上,这种局限性已经约束了设计光源的灵活性,该设计光源具有不同的色温以及彩色再现指数(“CRI”)。
因此,需要提供磷光体组合物,其是在近紫外光至蓝光范围是可激发的并且在可见光范围发光,使得其可以灵活地用于设计具有诸如色温及CRI这样的可调谐性能的光源。
发明内容
本发明提供了铕和锰共活化的卤代磷酸盐磷光体,其是可以由电磁辐射激发的,该电磁辐射的波长范围在近紫外光至蓝光(从约315nm至约450nm)以有效地发射范围为从约440nm至约770nm的可见光。所发射的光线具有在范围从约550nm至约650nm处带有峰值的宽光谱并且具有黄色至橙色。本发明的一种卤代磷酸盐磷光体包括Eu2+和Mn2+两种活化剂并且具有通式(Ca,Sr,Ba,Mg)a(PO4)3(F,Cl,OH):Eu2+,Mn2+,其中a在从约4.5至包括5的范围内。
本发明的一个方面,一种卤代磷酸盐磷光体与至少一种在蓝-绿波长区(从约450nm至约550nm)具有峰值的其他磷光体组合以提供一种白光。这样的其他磷光体可以选自由Sr4Al14O25:Eu2+(在下文中称为“SAE”,发射峰在约490nm)、Sr6P6BO20(发射峰在约480nm)、BaAl8O13(发射峰在约480nm)、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+(发射峰在约480nm)、以及Sr2Si3O6·2SrCl2(发射峰在约490nm)组成的组。
本发明的另一方面,本发明的一种铕和锰共活化的卤代磷酸盐,两者单独或在一种混合物中与上面列举的一种或多种磷光体与近紫外光/蓝光发光二极管相邻地设置以提供一种白光源。
本发明的一个方面,提供一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-x-y-p-qSrxBayMgzEupMnq)a(PO4)3(F,Cl,OH)表示的组成,
其中,0≤x≤1、0≤y≤1、0≤z≤1、0<p≤0.3、0<q≤0.3、0<x+y+z+p+q≤1、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射且能够发出可见光。
优选地,所述发光材料,其中所述p与q都是正数,并且每个优选小于0.1,更优选小于0.05。
优选地,其中所述a优选为在从4.7至包括5的范围内,而更优选为在从4.9至包括5的范围内。
本发明的另一方面,提供一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-p-qEupMnq)a(PO4)3F表示的组成,
其中,0<p≤0.3、0<q≤0.3、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射并且能够发出可见光。
优选地,其中所述p与q都是正数,并且每个优选小于0.1,更优选小于0.05。
优选地,其中所述a优选为在从4.7至包括5的范围内,而更优选为在从4.9至包括5的范围内。
本发明的另一方面,提供一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-p-qEupMnq)a(PO4)3Cl表示的组成,
其中,0<p≤0.2、0<q≤0.2、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射并且能够发出可见光。
优选地,其中所述p与q都是正数,并且每个优选小于约0.1,更优选小于约0.05。
优选地,其中所述a优选为在从4.7至包括5的范围内,而更优选为在从4.9至包括5的范围内。
本发明的再一方面,提供一种光源,所述光源包括:
至少一个发光二极管,其能够发出具有从近紫外光至蓝光范围波长的电磁辐射;以及
至少一种发光材料,其选自由具有通式(Ca1-x-y-p-qSrxBayMgzEupMnq)a(PO4)3(F,Cl,OH)的发光材料组成的组,
其中,0≤x≤1、0≤y≤1、0≤z≤1、0<p≤0.3、0<q≤0.3、0<x+y+z+p+q≤1、以及4.5≤a≤5;所述发光材料能够吸收由所述发光二极管发出的所述电磁辐射并且能够发出具有可见光谱波长的光线。
优选地,其中所述至少一个发光二极管为多个发光二极管,其每个都能够发出波长范围为从近紫外光至蓝光的电磁辐射。
优选地,其中所述发光二极管发射波长范围在从315nm至450nm的电磁辐射。
优选地,其中所述发光二极管优选地发射波长范围为从350nm至420nm、更优选为从350nm至400nm的电磁辐射。
本发明的又一方面,提供一种光源,所述光源包括:
至少一个发光二极管,其能够发出波长范围为从近紫外光至蓝光的电磁辐射;以及
发光材料,其具有化学式(Ca1-p-qEupMnq)a(PO4)3Cl,
其中,0<p≤0.3、0<q≤0.3、以及4.5≤a≤5;所述发光材料能够吸收由所述发光二极管发出的所述电磁辐射并且能够发射具有可见光谱波长的光线。
优选地,其中所述至少一个发光二极管为多个发光二极管,其每个都能够发出波长范围为从近紫外光至蓝光的电磁辐射。
优选地,所述光源还包括至少一种发光材料,其选自由Sr4Al14O25:Eu2+、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、及Sr2Si3O6·2SrCl2:Eu2+组成的组。
其中所述多个发光二极管发射波长范围在从315nm至450nm的电磁辐射。优选地发射从350nm至420nm的电磁辐射。更优选地,发射波长范围为从350nm至400nm的电磁辐射。
本发明的其他方面、优点、及突出特征通过仔细阅读下面的详细描述将变得显而易见,其参照附图披露本发明的具体实施方式。
附图说明
图1A示出了本发明的两种卤代磷酸盐磷光体的室温激发谱;
图1B示出了图1A的两种卤代磷酸盐的室温发射光谱;
图2示出了现有技术中的磷光体(Ba,Ca,Mg)5(PO4)3Cl:Eu2+的发射光谱;以及
图3示出了引入本发明的卤代磷酸盐的一种白光源。
具体实施方式
本发明提供了铕和锰共活化的卤代磷酸盐磷光体,其可以由波长范围为在近紫外光至蓝光(从约315nm至约450nm)的电磁辐射激发,用以有效地发射波长范围从约440nm至约770nm的可见光。激发辐射的波长范围优选在从约315nm至约420nm,更优选在从约350nm至约400nm。适于与本发明的磷光体掺合物使用的近紫外光/蓝光发光二极管是一种具有如在美国专利第5,777,350号中披露的InGaN活化层的发光二极管。尤为有用的是那些具有GaN层或在GaN层中仅有很少量铟(In)掺杂剂的发光二极管,这是由于这些发光二极管将主要在波长范围小于约400nm发出辐射。一般而言,本发明的卤代磷酸盐磷光体具有化学式(Ca,Sr,Ba,Mg)a(PO4)3(F,Cl,OH):Eu2+,Mn2+,其中a在从约4.5至包括5的范围内,优选从约4.7至包括5的范围内,更优选从约4.9至包括5的范围内。在这个化学式中,冒号后的元素代表活化剂并且与金属相比具有低原子比,例如小于约20%。在一组圆括号中由逗号分开的元素组代表那些在相同的晶格格位处可互换的元素。例如,钙可以部分地或全部地被Sr、Ba、Mg或其组合物所取代。通过对组成的仔细控制,可以产生发出绿光、黄光或橙光的磷光体。
本发明优选的卤代磷酸盐磷光体是Ca5(PO4)aCl:Eu2+,Mn2+和Caa(PO4)3F:Eu2+,Mn2+,其中a如上所限定。优选地,每种活化剂Eu2+和Mn2+的存在水平为小于约30mol%的Ca,更优选小于约25mol%的Ca。
图1A和图1B示出了在化学式中的卤素对卤代磷酸盐磷光体的光致发光的影响。一般而言,氟化物对较短波长的受激辐射的响应与氯化物相比更好,并且在与氯化物相比较短的波长处具有发射峰。因此,射出光线的颜色可以通过用氯化物部分取代氟化物来调谐。图2示出了只用铕活化的现有技术中的卤代磷酸盐磷光体((Ba,Ca,Mg)5(PO4)3Cl:Eu2+)的发射光谱。这种现有技术的磷光体在波长480nm处具有峰,明显是在蓝光范围内。尽管申请人不希望与任何特定理论相结合,但是可以相信本发明的卤代磷酸盐磷光体的发射峰向较长波长的有益转化是由Eu2+吸收的大部分辐射能量转移到Mn2+的结果。尽管申请人不希望与任何特定理论相结合,但是可以相信本发明的卤代磷酸盐磷光体的在较长波长的另外的发射峰是由Eu2+吸收的大部分辐射能量转移到Mn2+的结果。
本发明的卤代磷酸盐磷光体可以通过任意常规的固态反应来制备。例如,具有通式组成(Ca1-x-yEuxMny)5(PO4)3(F,Cl)的磷光体通过适当量的起始原料CaHPO4、Eu2O3、MnCO3、NH4Cl、CaCl2、CaF2、和(NH4)HPO4,在氮气中的氢气为0.1-10%的还原气氛中温度为1000-1300℃下加热该混合物约1-10小时,并随后在相同的还原气氛中冷却到环境温度。加热时间取决于要处理的材料的量。然而,低于10小时的加热时间是适当的。钙可以用Sr、Ba、Mg或其组合物来取代以获得其他所需要的组成。
本发明的另一个方面,如上所述一种发出黄光至橙光的卤代磷酸盐磷光体与一种发出蓝光的磷光体掺合以提供一种发射白光的复合材料。由近紫外光至蓝光电磁辐射激发的发蓝光磷光体的实例为Sr4Al14O25:Eu2+(“SAE”)、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、以及Sr2Si3O6·2SrCl2:Eu2+。在本申请中SAE磷光体尤为有用,这是由于其量子效率高(为90%)并且其不吸收可见光。该复合光所需要的颜色将控制铕和锰共活化的卤代磷酸盐磷光体和发蓝光磷光体的相对比例。
发射白光的装置
在包括在波长范围从约315nm至约480nm发射近紫外光至蓝光光线的发光二极管的装置中引入本发明的卤代磷酸盐磷光体和发蓝光磷光体的掺杂物能够提供一种白光源,该白光源可以有效利用电能。制造出的这种白光源可以用来通过利用一个近紫外光/蓝光发光二极管提供一种点光源装置或者通过利用多个近紫外光/蓝光发光二极管提供一种大面积照明装置。
在如图3所示的本发明的一个具体实施方式中,在波长范围从约315nm至约480nm,优选从约350nm至420nm,更优选从约350nm至400nm发射近紫外光/蓝光的发光二极管100被安装在与发光二极管100相邻的具有反射表面140的杯状物120上。适用于发白光装置的近紫外光/蓝光发光二极管为诸如上述美国专利第5,777,350号中的那些GaN或掺杂铟的GaN半导体基发光二极管,将其结合于此作为参考。也可以使用其他的近紫外光/蓝光发光二极管,诸如基于掺杂各种金属的GaN半导体的发光二极管以提供大的带隙。电导线150和152给发光二极管提供供电电能。透明铸件160包括环氧树脂或有机硅树脂180,在其中分散有基本均匀的本发明的磷光体的颗粒200。然后,围绕发光二极管和磷光体铸件组合体设置诸如环氧树脂或有机硅树脂这样的透明材料的模制密封220以提供一种在其上的熔接密封。可供选择地,用粘合剂混合的磷光体可以作为涂层涂在发光二极管表面上,而将透明铸件设置在整个发光二极管/磷光体组合物之上以提供熔接密封。也可以利用其他的透明聚合物或材料。发光二极管的InGaN活化层的组成和涂在铸件上的磷光体的量是可以选择的,使得由发光二极管发出的不被磷光体吸收的一部分蓝光和由磷光体发出的宽光谱光线进行组合以提供所需要的色温和CRI的白光源10。可供选择地,当由发光二极管活化层发出的光线在蓝光范围不足时,可以增加发蓝光磷光体(诸如上面列举的发蓝光磷光体中的一种)的量,用以提供用于不同颜色成分的适当掺合物。
用于普通照明的大面积白光源可以通过在扁平的反射面板上设置多个蓝光发光二极管,向各个发光二极管提供适当的电导线,涂包括至少一种本发明的磷光体的掺合物和聚合物粘合剂(诸如环氧树脂)的涂层,然后将整个组合结构以透明和熔接密封方式进行密封。该磷光体掺合物/聚合物涂层可以直接涂在各个发光二极管上或者也可以涂在整个面板表面上。在前一种情况下,在将磷光体涂在发光二极管上之后,可以将另外的聚合物涂层涂在整个面板表面上。另外,可以在聚合物基质中提供诸如TiO2或Al2O3这样的惰性固体颗粒,用以提高从装置射出光线的均匀性。
尽管在本文中描述了各种具体实施方式,但应该明了的是,本领域技术人员在本说明书基础上所作的各种要素的组合、变换、等同替换或改进都应涵盖在本发明所附权利要求的保护范围内。
Claims (30)
1.一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-x-y-z-p-qSrxBayMgzEupMnq)a(PO4)3(F,Cl,OH)表示的组成,
其中,0≤x≤1、0≤y≤1、0≤z≤1、0<p≤0.3、0<q≤0.3、0<x+y+z+p+q≤1、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射且能够发出可见光。
2.根据权利要求1所述的发光材料,其中所述p与q都是正数,并且每个小于0.1。
3.根据权利要求1所述的发光材料,其中所述p与q都是正数,并且每个小于0.05。
4.根据权利要求1所述的发光材料,其中所述a在从4.7至包括5的范围内。
5.根据权利要求1所述的发光材料,其中所述a在从4.9至包括5的范围内。
6.一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-p-qEupMnq)a(PO4)3F表示的组成,
其中,0<p≤0.3、0<q≤0.3、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射并且能够发出可见光。
7.根据权利要求6所述的发光材料,其中所述p与q都是正数,并且每个小于0.1。
8.根据权利要求6所述的发光材料,其中所述p与q都是正数,并且每个小于0.05。
9.根据权利要求6所述的发光材料,其中所述a在从4.7至包括5的范围内。
10.根据权利要求6所述的发光材料,其中所述a在从4.9至包括5的范围内。
11.一种发光材料,所述发光材料是由铕和锰进行活化的并且具有由(Ca1-p-qEupMnq)a(PO4)3Cl表示的组成,
其中,0<p≤0.2、0<q≤0.2、以及4.5≤a≤5;所述发光材料能够吸收波长范围在315nm至450nm的电磁辐射并且能够发出可见光。
12.根据权利要求11所述的发光材料,其中所述p与q都是正数,并且每个小于0.1。
13.根据权利要求11所述的发光材料,其中所述p与q都是正数,并且每个小于0.05。
14.根据权利要求11所述的发光材料,其中所述a在从4.7至包括5的范围内。
15.根据权利要求11所述的发光材料,其中所述a在从4.9至包括5的范围内。
16.一种光源,所述光源包括:
至少一个发光二极管,其能够发出具有从近紫外光至蓝光范围波长的电磁辐射;以及
至少一种发光材料,其选自由具有通式(Ca1-x-y-z-p-qSrxBayMgzEupMnq)a(PO4)3(F,Cl,OH)的发光材料组成的组,
其中,0≤x≤1、0≤y≤1、0≤z≤1、0<p≤0.3、0<q≤0.3、0<x+y+z+p+q≤1、以及4.5≤a≤5;所述发光材料能够吸收由所述发光二极管发出的所述电磁辐射并且能够发出具有可见光谱波长的光线。
17.根据权利要求16所述的光源,其中所述至少一个发光二极管为多个发光二极管,其每个都能够发出波长范围为从近紫外光至蓝光的电磁辐射。
18.根据权利要求16或17所述的光源,其中所述发光二极管发射波长范围在从315nm至450nm的电磁辐射。
19.根据权利要求18所述的光源,其中所述发光二极管发射波长范围为从350nm至420nm的电磁辐射。
20.根据权利要求18所述的光源,其中所述发光二极管发射波长范围为从350nm至400nm的电磁辐射。
21.根据权利要求16所述的光源,还包括至少一种发光材料,其选自由Sr4Al14O25:Eu2+、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、及Sr2Si3O6·2SrCl2:Eu2+组成的组。
22.一种光源,所述光源包括:
至少一个发光二极管,其能够发出波长范围为从近紫外光至蓝光的电磁辐射;以及
发光材料,其具有化学式(Ca1-p-qEupMnq)a(PO4)3F,
其中,0<p≤0.3、0<q≤0.3、以及4.5≤a≤5;所述发光材料能够吸收由所述发光二极管发出的所述电磁辐射并且能够发射具有可见光谱波长的光线。
23.根据权利要求22所述的光源,其中所述至少一个发光二极管为多个发光二极管,其每个都能够发出波长范围为从近紫外光至蓝光的电磁辐射。
24.根据权利要求22或23所述的光源,还包括至少一种发光材料,其选自由Sr4Al14O25:Eu2+、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、及Sr2Si3O6·2SrCl2:Eu2+组成的组。
25.一种光源,所述光源包括:
至少一个发光二极管,其能够发出波长范围为从近紫外光至蓝光的电磁辐射;以及
发光材料,其具有化学式(Ca1-p-qEupMnq)a(PO4)3Cl,
其中,0<p≤0.3、0<q≤0.3、以及4.5≤a≤5;所述发光材料能够吸收由所述发光二极管发出的所述电磁辐射并且能够发射具有可见光谱波长的光线。
26.根据权利要求25所述的光源,其中所述至少一个发光二极管为多个发光二极管,其每个都能够发出波长范围为从近紫外光至蓝光的电磁辐射。
27.根据权利要求25或26所述的光源,还包括至少一种发光材料,其选自由Sr4Al14O25:Eu2+、Sr6P6BO20:Eu2+、BaAl8O13:Eu2+、(Sr,Mg,Ca,Ba)5(PO4)3Cl:Eu2+、及Sr2Si3O6·2SrCl2:Eu2+组成的组。
28.根据权利要求25或26所述的光源,其中所述多个发光二极管发射波长范围在从315nm至450nm的电磁辐射。
29.根据权利要求25或26所述的光源,其中所述多个发光二极管发射波长范围为从350nm至420nm的电磁辐射。
30.根据权利要求25或26所述的光源,其中所述多个发光二极管发射波长范围为从350nm至400nm的电磁辐射。
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PCT/US2002/016524 WO2004003106A1 (en) | 2001-05-21 | 2002-05-22 | Yellow light-emitting halophosphate phosphors and light sources incorporating the same |
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Families Citing this family (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501100B1 (en) * | 2000-05-15 | 2002-12-31 | General Electric Company | White light emitting phosphor blend for LED devices |
MY134305A (en) * | 2001-04-20 | 2007-12-31 | Nichia Corp | Light emitting device |
US7091656B2 (en) * | 2001-04-20 | 2006-08-15 | Nichia Corporation | Light emitting device |
US6798136B2 (en) * | 2001-06-19 | 2004-09-28 | Gelcore Llc | Phosphor embedded die epoxy and lead frame modifications |
DE10152217A1 (de) * | 2001-10-23 | 2003-04-30 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Leuchtstoffzusammensetzung für Niederdruckentladungslampen |
US6825108B2 (en) * | 2002-02-01 | 2004-11-30 | Broadcom Corporation | Ball grid array package fabrication with IC die support structures |
DE10259946A1 (de) * | 2002-12-20 | 2004-07-15 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Leuchtstoffe zur Konversion der ultravioletten oder blauen Emission eines lichtemittierenden Elementes in sichtbare weiße Strahlung mit sehr hoher Farbwiedergabe |
EP2264798B1 (en) * | 2003-04-30 | 2020-10-14 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
CN1954044B (zh) * | 2004-02-20 | 2013-04-24 | 吉尔科有限公司 | 使用磷光体转换发光二极管的有效光源的规则 |
BRPI0510707B1 (pt) | 2004-05-05 | 2018-09-25 | Rensselaer Polytech Inst | aparelho emissor de luz |
US7837348B2 (en) | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US20050275333A1 (en) * | 2004-06-14 | 2005-12-15 | Ru-Shi Liu | White light illumination device and method of manufacturing the same |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
JP2008506011A (ja) * | 2004-07-06 | 2008-02-28 | サーノフ コーポレーション | 効率的な緑色発光蛍光体、及び赤色発光蛍光体との組合せ |
US7352124B2 (en) * | 2004-09-28 | 2008-04-01 | Goldeneye, Inc. | Light recycling illumination systems utilizing light emitting diodes |
DE102004060358A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip |
US8125137B2 (en) * | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
JP4890018B2 (ja) * | 2005-01-26 | 2012-03-07 | 株式会社小糸製作所 | 白色発光蛍光体およびそれを用いた発光モジュール |
US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
DE102005031336B4 (de) * | 2005-05-13 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Projektionseinrichtung |
WO2007002234A1 (en) * | 2005-06-23 | 2007-01-04 | Rensselaer Polytechnic Institute | Package design for producing white light with short-wavelength leds and down-conversion materials |
DE102005040558A1 (de) * | 2005-08-26 | 2007-03-01 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip |
DE102005052356A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Beleuchtungseinheit mit Lumineszenzdiodenchip und Lichtleiter, Verfahren zum Herstellen einer Beleuchtungseinheit und LCD-Display |
DE102005059524A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
DE102006004397A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US20070080635A1 (en) * | 2005-10-06 | 2007-04-12 | Luminoso Photoelectric Technology Co. | Light emitting device for visible light generation |
US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
WO2007061815A1 (en) * | 2005-11-18 | 2007-05-31 | Cree, Inc. | Solid state lighting device |
US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
JP5614766B2 (ja) | 2005-12-21 | 2014-10-29 | クリー インコーポレイテッドCree Inc. | 照明装置 |
EP2372224A3 (en) | 2005-12-21 | 2012-08-01 | Cree, Inc. | Lighting Device and Lighting Method |
KR20090009772A (ko) | 2005-12-22 | 2009-01-23 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
DE102006015117A1 (de) | 2006-03-31 | 2007-10-04 | Osram Opto Semiconductors Gmbh | Optoelektronischer Scheinwerfer, Verfahren zum Herstellen eines optoelektronischen Scheinwerfers und Lumineszenzdiodenchip |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US9921428B2 (en) | 2006-04-18 | 2018-03-20 | Cree, Inc. | Light devices, display devices, backlighting devices, edge-lighting devices, combination backlighting and edge-lighting devices |
US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
EP2052589A4 (en) | 2006-04-18 | 2012-09-19 | Cree Inc | LIGHTING DEVICE AND METHOD |
US9084328B2 (en) * | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
US8998444B2 (en) * | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
BRPI0710461A2 (pt) * | 2006-04-20 | 2011-08-16 | Cree Led Lighting Solutions | dispositivo de iluminação e método de iluminação |
US20070273282A1 (en) * | 2006-05-25 | 2007-11-29 | Gelcore Llc | Optoelectronic device |
CN101454613A (zh) | 2006-05-31 | 2009-06-10 | 科锐Led照明科技公司 | 具有颜色控制的照明装置及其照明方法 |
US8596819B2 (en) | 2006-05-31 | 2013-12-03 | Cree, Inc. | Lighting device and method of lighting |
CN101554089A (zh) * | 2006-08-23 | 2009-10-07 | 科锐Led照明科技公司 | 照明装置和照明方法 |
US7703942B2 (en) * | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
DE102007020782A1 (de) * | 2006-09-27 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102006046199A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
KR101497104B1 (ko) * | 2006-10-03 | 2015-02-27 | 라이트스케이프 머티어리얼스, 인코포레이티드 | 금속 실리케이트 할라이드 형광체 및 이를 이용한 led 조명 디바이스 |
US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
US7889421B2 (en) | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
CN101617411B (zh) * | 2006-11-30 | 2012-07-11 | 科锐公司 | 照明装置及照明方法 |
US9441793B2 (en) * | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
TWI325885B (en) * | 2006-12-07 | 2010-06-11 | Ind Tech Res Inst | Red phosphor and white light illumination device |
US7918581B2 (en) * | 2006-12-07 | 2011-04-05 | Cree, Inc. | Lighting device and lighting method |
US7959827B2 (en) * | 2007-12-12 | 2011-06-14 | General Electric Company | Persistent phosphor |
US8333907B2 (en) | 2007-01-17 | 2012-12-18 | Utc Fire & Security Corporation | Articles using persistent phosphors |
US8506114B2 (en) * | 2007-02-22 | 2013-08-13 | Cree, Inc. | Lighting devices, methods of lighting, light filters and methods of filtering light |
DE102007018837A1 (de) | 2007-03-26 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip |
DE102007015474A1 (de) * | 2007-03-30 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR101485206B1 (ko) * | 2007-05-08 | 2015-01-27 | 크리, 인코포레이티드 | 조명 장치 및 조명 방법 |
CN101688644B (zh) * | 2007-05-08 | 2011-06-15 | 科锐Led照明科技公司 | 照明装置及照明方法 |
BRPI0811561A2 (pt) * | 2007-05-08 | 2015-06-16 | Cree Led Lighting Solutions | Dispositivo de iluminação e método de iluminação |
WO2008137977A1 (en) * | 2007-05-08 | 2008-11-13 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
KR20100017668A (ko) * | 2007-05-08 | 2010-02-16 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
DE102007042642A1 (de) | 2007-09-07 | 2009-03-12 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102007044597A1 (de) | 2007-09-19 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102007050876A1 (de) | 2007-09-26 | 2009-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102007054800A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit einer derartigen Vorrichtung |
TWI481068B (zh) | 2007-10-10 | 2015-04-11 | 克里公司 | 照明裝置及其製造方法 |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US8866410B2 (en) | 2007-11-28 | 2014-10-21 | Cree, Inc. | Solid state lighting devices and methods of manufacturing the same |
US8545723B2 (en) * | 2007-12-12 | 2013-10-01 | General Electric Company | Persistent phosphor |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
US8350461B2 (en) * | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
KR20110048580A (ko) * | 2008-09-04 | 2011-05-11 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 광 차단 구성요소를 갖는 광원 |
DE102009010468A1 (de) | 2008-11-13 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Funktionsmaterial mit darauf angeordneten Lichtkonversionsstoff-Partikeln, Verfahren zu dessen Herstellung und optoelektronisches Bauelement, enthaltend ein derartiges Funktionsmaterial |
US8333631B2 (en) | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US8648546B2 (en) * | 2009-08-14 | 2014-02-11 | Cree, Inc. | High efficiency lighting device including one or more saturated light emitters, and method of lighting |
US8901845B2 (en) | 2009-09-24 | 2014-12-02 | Cree, Inc. | Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods |
CN102630288B (zh) | 2009-09-25 | 2015-09-09 | 科锐公司 | 具有低眩光和高亮度级均匀性的照明设备 |
DE102010024758A1 (de) | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Optikkörpers, Optikkörper und optoelektronisches Bauteil mit dem Optikkörper |
TWI361215B (en) * | 2009-10-12 | 2012-04-01 | Ind Tech Res Inst | Phosphors, fabricating method thereof, and light emitting device employing the same |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
US8508116B2 (en) | 2010-01-27 | 2013-08-13 | Cree, Inc. | Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US8104908B2 (en) * | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
WO2011143197A2 (en) | 2010-05-13 | 2011-11-17 | Cree, Inc. | Lighting device and method of making |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
DE102010050832A1 (de) | 2010-11-09 | 2012-05-10 | Osram Opto Semiconductors Gmbh | Lumineszenzkonversionselement, Verfahren zu dessen Herstellung und optoelektronisches Bauteil mit Lumineszenzkonversionselement |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
DE102010054280A1 (de) | 2010-12-13 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Verfahren zum Erzeugen einer Lumineszenzkonversionsstoffschicht, Zusammensetzung hierfür und Bauelement umfassend eine solche Lumineszenzkonversionsstoffschicht |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
CN102730660A (zh) * | 2012-06-06 | 2012-10-17 | 韦丽梅 | 铕掺杂磷酸铁钡的制备方法 |
US9353917B2 (en) | 2012-09-14 | 2016-05-31 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
DE102012111123A1 (de) | 2012-09-26 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
CN104087300B (zh) * | 2014-03-20 | 2017-03-15 | 王海容 | 一种硫代磷酸盐荧光体及其应用 |
US9871173B2 (en) | 2015-06-18 | 2018-01-16 | Cree, Inc. | Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods |
US10541353B2 (en) | 2017-11-10 | 2020-01-21 | Cree, Inc. | Light emitting devices including narrowband converters for outdoor lighting applications |
DE102017130136A1 (de) | 2017-12-15 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
CN110010785B (zh) * | 2019-04-15 | 2021-11-30 | 郑州大学 | 一种基于无机非铅锑基钙钛矿量子点的黄光led及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4038204A (en) * | 1968-05-03 | 1977-07-26 | Westinghouse Electric Corporation | Alkaline-earth metal halophosphate luminescent composition activated by divalent europium and method of preparing same |
JPH05194946A (ja) * | 1992-01-23 | 1993-08-03 | Toshiba Corp | 蛍光体およびこの蛍光体を用いた蛍光ランプ |
JPH05320638A (ja) * | 1992-05-15 | 1993-12-03 | Toshiba Corp | 蛍光体およびそれを用いた蛍光ランプ |
US5367176A (en) * | 1992-06-10 | 1994-11-22 | Agfa-Gevaert, N.V. | Photostimulable storage phosphor and its use in radiography |
US5838101A (en) * | 1992-10-28 | 1998-11-17 | Gte Products Corporation | Fluorescent lamp with improved CRI and brightness |
EP1187167A1 (de) * | 2000-09-05 | 2002-03-13 | Philips Corporate Intellectual Property GmbH | Farbbildschirm mit blauer Leuchtstoffschicht |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2488733A (en) | 1942-06-17 | 1949-11-22 | Gen Electric | Alkaline earth halophosphate phosphors |
US3513103A (en) * | 1967-12-12 | 1970-05-19 | Sylvania Electric Prod | Fluorescent phosphor |
JPS5720623B2 (zh) | 1972-04-20 | 1982-04-30 | ||
US4426600A (en) * | 1977-09-06 | 1984-01-17 | Gte Products Corporation | Standard white fluorescent lamps employing blend |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6414426B1 (en) | 1997-02-13 | 2002-07-02 | Matsushita Electric Industrial Co., Ltd. | High-efficiency light source |
DE20023590U1 (de) | 1999-07-23 | 2005-02-24 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoff für Lichtquellen und zugehörige Lichtquelle |
US7132786B1 (en) | 1999-07-23 | 2006-11-07 | Osram Gmbh | Luminescent array, wavelength-converting sealing material and light source |
DE10020465A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US6685852B2 (en) * | 2001-04-27 | 2004-02-03 | General Electric Company | Phosphor blends for generating white light from near-UV/blue light-emitting devices |
-
2001
- 2001-05-21 US US09/681,686 patent/US6616862B2/en not_active Expired - Lifetime
-
2002
- 2002-05-22 AU AU2002312049A patent/AU2002312049A1/en not_active Abandoned
- 2002-05-22 JP JP2004517470A patent/JP2005526899A/ja active Pending
- 2002-05-22 WO PCT/US2002/016524 patent/WO2004003106A1/en active Application Filing
- 2002-05-22 CN CNB028290062A patent/CN100347266C/zh not_active Expired - Fee Related
- 2002-05-22 EP EP02739399A patent/EP1539902A4/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4038204A (en) * | 1968-05-03 | 1977-07-26 | Westinghouse Electric Corporation | Alkaline-earth metal halophosphate luminescent composition activated by divalent europium and method of preparing same |
JPH05194946A (ja) * | 1992-01-23 | 1993-08-03 | Toshiba Corp | 蛍光体およびこの蛍光体を用いた蛍光ランプ |
JPH05320638A (ja) * | 1992-05-15 | 1993-12-03 | Toshiba Corp | 蛍光体およびそれを用いた蛍光ランプ |
US5367176A (en) * | 1992-06-10 | 1994-11-22 | Agfa-Gevaert, N.V. | Photostimulable storage phosphor and its use in radiography |
US5838101A (en) * | 1992-10-28 | 1998-11-17 | Gte Products Corporation | Fluorescent lamp with improved CRI and brightness |
EP1187167A1 (de) * | 2000-09-05 | 2002-03-13 | Philips Corporate Intellectual Property GmbH | Farbbildschirm mit blauer Leuchtstoffschicht |
Also Published As
Publication number | Publication date |
---|---|
WO2004003106A1 (en) | 2004-01-08 |
EP1539902A1 (en) | 2005-06-15 |
EP1539902A4 (en) | 2007-04-11 |
US20030146411A1 (en) | 2003-08-07 |
CN1628164A (zh) | 2005-06-15 |
AU2002312049A1 (en) | 2004-01-19 |
US6616862B2 (en) | 2003-09-09 |
JP2005526899A (ja) | 2005-09-08 |
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