CN100347266C - Yellow light-emitting halophosphate phosphors and light sources incorporating same - Google Patents

Yellow light-emitting halophosphate phosphors and light sources incorporating same Download PDF

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CN100347266C
CN100347266C CNB028290062A CN02829006A CN100347266C CN 100347266 C CN100347266 C CN 100347266C CN B028290062 A CNB028290062 A CN B028290062A CN 02829006 A CN02829006 A CN 02829006A CN 100347266 C CN100347266 C CN 100347266C
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luminescent material
light
photodiode
electromagnetic radiation
light source
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CN1628164A (en
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阿洛克·马尼·斯里瓦斯塔瓦
霍利·安·科曼佐
阿南特·阿奇尤特·塞特勒尔
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Current Lighting Solutions LLC
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Gelcore LLC
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7737—Phosphates
    • C09K11/7738—Phosphates with alkaline earth metals
    • C09K11/7739—Phosphates with alkaline earth metals with halogens
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/774—Borates
    • H01L33/502—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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  • Chemical & Material Sciences (AREA)
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  • Luminescent Compositions (AREA)

Abstract

The present invention discloses a halogenated phosphate luminescent material which is activated by europium ions and manganese ions and has the following general formula: (Ca, Sr, Ba Mg)5(PO4)3: EU<2+>: Mn<2+>. A clathrate compound of manganese moves an emission peak to a longer wavelength, which is favorable for generating bright yellow-orange light rays. A white light source is generated by arranging the halogenated phosphate luminescent material, and optionally, a phosphor emitting blue light is arranged near a light emitting diode of black light/blue light. The phosphors which emit blue light and can be used for specific embodiment are presented as following: Sr4Al14O25: Eu<2+>, Sr6P6BO20: Eu<2+>, BaAl8O13: Eu<2+>, (Sr, Mg, Ca, CaBa)5(PO4)3Cl: Eu<2+> and Sr2Si3O62SrCl2: Eu<2+>.

Description

Jaundice light halophosphate phosphor and introduce the light source of this jaundice light halophosphate phosphor
Technical field
The light halophosphate phosphor the present invention relates to turn to be yellow.Particularly, the present invention relates to the halophosphate phosphors of favoring for the people, it utilizes Eu 2+And Mn 2+Activation can be sent gold-tinted, and this gold-tinted is excited in near-ultraviolet light (" near UV ") to the electromagnetic radiation of blue light by wavelength region.The invention still further relates to and introduce this halophosphate phosphors to produce the light source of white light.
Background technology
Phosphorescent substance (phosphor) is a kind of luminescent material, and it is at a part of absorbed radiation energy of electromagnetic spectrum, and at another part emitted energy of electromagnetic spectrum.The important phosphorescent substance of one class is to have very high chemical purity and add a small amount of other elements (so-called " activator ") therein to make it change into the crystalline inorganic compound of effective fluorescent material as the control composition.Utilize the appropriate combination of activator and main mineral compound, can control the color that emits beam.The most useful and known phosphorescent substance sends radiation in the visible light part of electromagnetic spectrum to being responded by exciting of being in that electromagnetic radiation outside the visible-range carries out.Known phosphorescent substance has been used for mercury vapour discharge lamp changing into visible light by being excited ultraviolet (" the UV ") radiation of mercury vapor emission.Other phosphorescent substance can send visible light based on being excited by electronics (being used for cathode tube) or x ray (for example, the scintillator in the x-ray detecting system).
Because the different and feasible efficient of the means of illumination of phosphorescent substance of utilizing with the narrow frequency of the radiation of ejaculation of the wavelength of exciting radiation improve.Therefore, in order to seek the white light source of improved efficiency, people have made great efforts to be devoted to seek to have than UV radiation more long wavelength's stimulated radiation source and the phosphorescent substance that those wavelength are responded.Recently the technical progress of photodiode (" LED ") brought near-ultraviolet light to blue light range luminous light effect LED arranged.The term of using in this article " photodiode " also comprises laser diode.The term of using in this article " near-ultraviolet light " is meant that wavelength region is the uv-radiation from about 315nm to about 410nm.These photodiodes are called " UV/blue photodiode " hereinafter in near-ultraviolet light to the radiation that blue light range penetrates.As used in this article, the UV/blue photodiode can send radiation, and its wavelength is in near-ultraviolet range, at blue light range or in the scope of the broad from near-ultraviolet light to blue light.Thereby the scope that can be excited the phosphorescent substance that can be used to produce versicolor photodiode neatly by the radiation of penetrating from these UV/blue led radiation sources is provided, and this will be a kind of progress of lighting engineering.Such phosphorescent substance if with make up from the emission of UV/blue photodiode, then can provide effectively and longer consumption of the time length means of illumination of electric power still less.
Occurred recently much based on indium, aluminium, and the near UV/blue leds of the combinations of nitrides of gallium.For example, United States Patent (USP) the 5th, 777 has disclosed for No. 350 and to have comprised InGa and p-type and n-type AlGaN multiwalled photodiode, and it is luminous from about 380nm to about 420nm in wavelength region.A kind of photodiode of InGaN type of blue light-emitting wavelength and a kind of with the combination of cerium (" YAG:Ce ") activatory jaundice light yttrium aluminum garnet phosphor coating producing white light, and at United States Patent (USP) the 5th, 998, disclosed in No. 925.Similarly, United States Patent (USP) the 6th, 066, disclosed for No. 861 a kind of with terbium and/or cerium activatory yttrium aluminum garnet phosphorescent substance, wherein yttrium can replace with Ca and/or Sr, aluminium replaces with Ga and/or Si and oxygen replaces with S, and this phosphorescent substance can be used for the blue light-emitting photodiode as the composition of wavelength conversion layer.YAG:Ce and variant thereof are launched a kind of wide spectrographic gold-tinted.Although being used for the required major portion of white light devices can fill by led based device, but the ability that UV/blue photodiode and phosphorescent substance make up is limited, this is because people only understand the phosphorescent substance that yttrium aluminum garnet phosphorescent substance and minor variations thereof are jaundice light, its at blue light range by radiation excitation.To a certain extent, this limitation has retrained the handiness of design light source, and this design light source has different colour temperatures and colour rendering index (" CRI ").
Therefore, need provide phosphor composition, it is to be that can excite and luminous at visible-range at near-ultraviolet light to blue light range, makes it can be used to design the light source that has such as the so tunable performance of colour temperature and CRI neatly.
Summary of the invention
The invention provides the halophosphate phosphor of europium and manganese co-activating, it can be excited by electromagnetic radiation, and the wavelength region of this electromagnetic radiation is from about 440nm visible light of about 770nm extremely at near-ultraviolet light to blue light (from about 315nm to about 450nm) with transmitting boundary effectively.The light of being launched has in scope and has the wide spectrum of peak value and have Yellow-to-orange to about 650nm from about 550nm.A kind of halophosphate phosphor of the present invention comprises Eu 2+And Mn 2+Two kinds of activators and have general formula (Ca, Sr, Ba, Mg) a(PO 4) 3(F, Cl, OH): Eu 2+, Mn 2+, wherein a from about 4.5 to comprising in 5 the scope.
One aspect of the present invention, a kind of halophosphate phosphor and at least aly have other combination of phosphors of peak value so that a kind of white light to be provided at indigo plant-green wavelength zone (from about 450nm to about 550nm).Other phosphorescent substances like this can be selected from by Sr 4Al 14O 25: Eu 2+(be called " SAE " hereinafter, emission peak is at about 490nm), Sr 6P 6BO 20(emission peak is at about 480nm), BaAl 8O 13(emission peak is at about 480nm), (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+(emission peak is at about 480nm) and Sr 2Si 3O 62SrCl 2The group that (emission peak is at about 490nm) forms.
Another aspect of the present invention, the halophosphate of a kind of europium of the present invention and manganese co-activating, both are adjacent to be provided with so that a kind of white light source to be provided with above-named one or more phosphorescent substances and near UV/blue leds separately or in a kind of mixture.
One aspect of the present invention provides a kind of luminescent material, and described luminescent material is to be carried out activatory and had by (Ca by europium and manganese 1-x-y-p-qSr xBa yMg zEu pMn q) a(PO 4) 3(F, Cl, OH) Biao Shi composition,
Wherein, 0≤x≤1,0≤y≤1,0≤z≤1,0＜p≤0.3,0＜q≤0.3,0＜x+y+z+p+q≤1 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
Preferably, described luminescent material, wherein said p and q all are positive numbers, and each is more preferably less than 0.05 preferably less than 0.1.
Preferably, wherein said a is preferably from 4.7 to comprising in 5 the scope, and more preferably from 4.9 to comprising in 5 the scope.
Another aspect of the present invention provides a kind of luminescent material, and described luminescent material is to be carried out activatory and had by (Ca by europium and manganese 1-p-qEu pMn q) a(PO 4) 3The composition that F represents,
Wherein, 0＜p≤0.3,0＜q≤0.3 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
Preferably, wherein said p and q are positive numbers, and each is more preferably less than 0.05 preferably less than 0.1.
Preferably, wherein said a is preferably from 4.7 to comprising in 5 the scope, and more preferably from 4.9 to comprising in 5 the scope.
Another aspect of the present invention provides a kind of luminescent material, and described luminescent material is to be carried out activatory and had by (Ca by europium and manganese 1-p-qEu pMn q) a(PO 4) 3The composition that Cl represents,
Wherein, 0＜p≤0.2,0＜q≤0.2 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
Preferably, wherein said p and q are positive numbers, and each is more preferably less than about 0.05 preferably less than about 0.1.
Preferably, wherein said a is preferably from 4.7 to comprising in 5 the scope, and more preferably from 4.9 to comprising in 5 the scope.
One side more of the present invention provides a kind of light source, and described light source comprises:
At least one photodiode, it can send the electromagnetic radiation that has from near-ultraviolet light to the blue light range wavelength; And
At least a luminescent material, it is selected from by having general formula (Ca 1-x-y-p-qSr xBa yMg zEu pMn q) a(PO 4) 3(F, Cl, the group that luminescent material OH) is formed,
Wherein, 0≤x≤1,0≤y≤1,0≤z≤1,0＜p≤0.3,0＜q≤0.3,0＜x+y+z+p+q≤1 and 4.5≤a≤5; Described luminescent material can absorb the described electromagnetic radiation of being sent by described photodiode and can send the light with visible spectrum wavelength.
Preferably, wherein said at least one photodiode is a plurality of photodiodes, its each can both send wavelength region and be electromagnetic radiation from near-ultraviolet light to blue light.
Preferably, wherein said photodiode emission wavelength ranges is in the electromagnetic radiation from 315nm to 450nm.
Preferably, wherein said photodiode preferably emission wavelength ranges be from 350nm to 420nm, more preferably from the electromagnetic radiation of 350nm to 400nm.
Another aspect of the present invention provides a kind of light source, and described light source comprises:
At least one photodiode, it can send wavelength region and be the electromagnetic radiation from near-ultraviolet light to blue light; And
Luminescent material, it has chemical formula (Ca 1-p-qEu pMn q) a(PO 4) 3Cl,
Wherein, 0＜p≤0.3,0＜q≤0.3 and 4.5≤a≤5; Described luminescent material can absorb the described electromagnetic radiation of being sent by described photodiode and can launch the light with visible spectrum wavelength.
Preferably, wherein said at least one photodiode is a plurality of photodiodes, its each can both send wavelength region and be electromagnetic radiation from near-ultraviolet light to blue light.
Preferably, described light source also comprises at least a luminescent material, and it is selected from by Sr 4Al 14O 25: Eu 2+, Sr 6P 6BO 20: Eu 2+, BaAl 8O 13: Eu 2+, (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+, and Sr 2Si 3O 62SrCl 2: Eu 2+The group of forming.
Wherein said a plurality of photodiode emission wavelength ranges is in the electromagnetic radiation from 315nm to 450nm.Preferably launch electromagnetic radiation from 350nm to 420nm.More preferably, emission wavelength ranges is the electromagnetic radiation from 350nm to 400nm.
Other aspects of the present invention, advantage, and prominent feature will become apparent by reading over following detailed, it discloses the specific embodiment of the present invention with reference to accompanying drawing.
Description of drawings
Figure 1A shows the room temperature excitation spectrum of two kinds of halophosphate phosphor of the present invention;
Figure 1B shows the room temperature emmission spectrum of two kinds of halophosphates of Figure 1A;
Fig. 2 show phosphorescent substance of the prior art (Ba, Ca, Mg) 5(PO 4) 3Cl:Eu 2+Emmission spectrum; And
Fig. 3 shows a kind of white light source of introducing halophosphate of the present invention.
Embodiment
The invention provides the halophosphate phosphor of europium and manganese co-activating, it can be by wavelength region for exciting in the electromagnetic radiation of near-ultraviolet light to blue light (from about 315nm to about 450nm), in order to emission wavelength ranges effectively from about 440nm visible light of about 770nm extremely.The wavelength region of exciting radiation preferably from about 315nm to about 420nm, more preferably from about 350nm about 400nm extremely.The near UV/blue leds that is suitable for using with phosphor blend of the present invention is a kind ofly to have as at United States Patent (USP) the 5th, 777, the photodiode of the InGaN active layer that discloses in No. 350.Particularly usefully those have the GaN layer or the very photodiode of small amount of indium (In) doping agent are only arranged in the GaN layer, and this is because these photodiodes will mainly send radiation in wavelength region less than about 400nm.Generally speaking, halophosphate phosphor of the present invention have chemical formula (Ca, Sr, Ba, Mg) a(PO 4) 3(F, Cl, OH): Eu 2+, Mn 2+, wherein a is from about 4.5 to comprising in 5 the scope, preferably from about 4.7 to comprising in 5 the scope, more preferably from about 4.9 to comprising in 5 the scope.In this chemical formula, the element behind the colon is represented activator and is had low atomic ratio with the metallographic phase ratio, for example less than about 20%.The element set of being separated by comma in one group of parenthesis represents those at the identical interchangeable element in lattice site place.For example, calcium can partly or wholly be replaced by Sr, Ba, Mg or its composition.Careful control by to forming can produce the phosphorescent substance that sends green glow, gold-tinted or orange light.
The preferred halophosphate phosphor of the present invention is Ca 5(PO 4) aCl:Eu 2+, Mn 2+And Ca a(PO 4) 3F:Eu 2+, Mn 2+, wherein a as above limits.Preferably, every kind of activator Eu 2+And Mn 2+The level that exists be Ca less than about 30mol%, be more preferably less than the Ca of about 25mol%.
Figure 1A and Figure 1B show halogen in chemical formula to the influence of the photoluminescence of halophosphate phosphor.Generally speaking, fluorochemical is compared better with muriate the response of the stimulated radiation of shorter wavelength, and has emission peak at the wavelength place that compares short with muriate.Therefore, irradiant color can be tuning by partly replacing fluorochemical with muriate.Fig. 2 only show with europium activatory halophosphate phosphor of the prior art ((Ba, Ca, Mg) 5(PO 4) 3Cl:Eu 2+) emmission spectrum.The phosphorescent substance of this prior art has the peak at wavelength 480nm place, obviously is in blue light range.Although the applicant does not wish to combine with any particular theory, can believe that the emission peak of halophosphate phosphor of the present invention is by Eu to the useful conversion of longer wavelength 2+The most of quantity of radiant energy that absorbs is transferred to Mn 2+The result.Although the applicant does not wish to combine with any particular theory, can believe that the other emission peak at longer wavelength of halophosphate phosphor of the present invention is by Eu 2+The most of quantity of radiant energy that absorbs is transferred to Mn 2+The result.
Halophosphate phosphor of the present invention can prepare by the solid state reaction of any conventional.For example, have general formula and form (Ca 1-x-yEu xMn y) 5(PO 4) 3(F, phosphorescent substance Cl) is by the starting raw material CaHPO of appropriate amount 4, Eu 2O 3, MnCO 3, NH 4Cl, CaCl 2, CaF 2, and (NH 4) HPO 4, the hydrogen in nitrogen is that temperature is 1000-1300 ℃ of this mixture of heating about 1-10 hour down in the reducing atmosphere of 0.1-10%, and is cooled to envrionment temperature subsequently in identical reducing atmosphere.The amount that depends on material to be processed heat-up time.Yet be suitable the heat-up time that is lower than 10 hours.Calcium can replace to obtain other needed compositions with Sr, Ba, Mg or its composition.
Another aspect of the present invention, a kind of as mentioned above gold-tinted that sends is to the halophosphate phosphor of orange light and a kind ofly send the phosphorescent substance fusion of blue light so that a kind of matrix material of launching white light to be provided.The example of the blue light-emitting phosphorescent substance that is excited by near-ultraviolet light to blue light electromagnetic radiation is Sr 4Al 14O 25: Eu 2+(" SAE "), Sr 6P 6BO 20: Eu 2+, BaAl 8O 13: Eu 2+, (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+, and Sr 2Si 3O 62SrCl 2: Eu 2+The SAE phosphorescent substance is particularly useful in this application, and this is because its quantum yield height (being 90%) and its do not absorb visible light.The needed color of this complex light will be controlled the halophosphate phosphor of europium and manganese co-activating and the relative proportion of blue light-emitting phosphorescent substance.
The device of emission white light
Emission near-ultraviolet light hotchpotch of introducing halophosphate phosphor of the present invention and blue light-emitting phosphorescent substance to the device of the photodiode of blue light light can provide a kind of white light source from about 315nm to about 480nm being included in wavelength region, and this white light source can effectively utilize electric energy.This white light source that produces can be used for by utilizing a near UV/blue leds that a kind of spotlight source device is provided or by utilizing a plurality of near UV/blue leds that a kind of large area lighting device is provided.
In a specific embodiment of the present invention as shown in Figure 3, in wavelength region from about 315nm to about 480nm, preferably from about 350nm to 420nm, more preferably the photodiode 100 of launching near-ultraviolet light/blue light from about 350nm to 400nm is installed on the cup with reflecting surface 140 120 adjacent with photodiode 100.The near UV/blue leds that is applicable to the device that emits white light is hereby expressly incorporated by reference it for such as those GaN in No. the 5th, 777,350, the above-mentioned United States Patent (USP) or the semiconductor-based photodiode of GaN of doped indium.Also can use other near UV/blue leds, such as based on the semi-conductive photodiode of GaN of the various metals that mix so that big band gap to be provided.Electrical lead 150 and 152 provides the power supply electric energy to photodiode.Transparent foundry goods 160 comprises Resins, epoxy or silicone resin 180, is dispersed with the particle 200 of uniform substantially phosphorescent substance of the present invention therein.Then, center on the molded seal 220 of the such transparent material of photodiode and phosphorescent substance foundry goods molectron setting such as Resins, epoxy or silicone resin so that a kind of frit seal thereon to be provided.Alternatively, can be used as coating with tackiness agent blended phosphorescent substance and be coated on the LED surface, and transparent foundry goods is arranged on whole photodiode/phosphor composition so that frit seal to be provided.Also can utilize other transparent polymer or material.The composition of the InGaN active layer of photodiode and the amount that is coated in the phosphorescent substance on the foundry goods can be selected, and make a part of blue light that is not absorbed by phosphorescent substance that sent by photodiode and make up white light source 10 so that needed colour temperature and CRI to be provided by the wide spectrum light that phosphorescent substance sends.Alternatively, when the light that sends by the photodiode active layer when blue light range is not enough, can increase the amount of blue light-emitting phosphorescent substance (such as in the above-named blue light-emitting phosphorescent substance a kind of), in order to be provided for the suitable adulterant of different colours composition.
The large-area white light source that is used for general lighting can be by being provided with a plurality of blue light-emitting diodes on flat Reflector Panel, provide suitable electrical lead to each photodiode, be coated with the adulterant that comprises at least a phosphorescent substance of the present invention and the coating of polymer binder (such as Resins, epoxy), then whole unitized construction sealed with transparent and frit seal mode.This phosphor blend/polymeric coating can directly be coated on each photodiode or also and can be coated on the whole front panel surface.In the previous case, after being coated in phosphorescent substance on the photodiode, other polymeric coating can be coated on the whole front panel surface.In addition, can in polymeric matrix, provide such as TiO 2Or Al 2O 3Such inert solid particle is in order to improve from installing irradiant homogeneity.
Although described various embodiments in this article; but what should understand is, combination, the conversion of the various key elements that those skilled in the art are done on this specification sheets basis, is equal to replace or improve and all should be encompassed in the protection domain of claims of the present invention.

Claims (30)

1. luminescent material, described luminescent material are to be carried out activatory and had by (Ca by europium and manganese 1-x-y-z-p-qSr xBa yMg zEu pMn q) a(PO 4) 3(F, Cl, OH) Biao Shi composition,
Wherein, 0≤x≤1,0≤y≤1,0≤z≤1,0＜p≤0.3,0＜q≤0.3,0＜x+y+z+p+q≤1 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
2. luminescent material according to claim 1, wherein said p and q are positive numbers, and each is less than 0.1.
3. luminescent material according to claim 1, wherein said p and q are positive numbers, and each is less than 0.05.
4. luminescent material according to claim 1, wherein said a from 4.7 to comprising in 5 the scope.
5. luminescent material according to claim 1, wherein said a from 4.9 to comprising in 5 the scope.
6. luminescent material, described luminescent material are to be carried out activatory and had by (Ca by europium and manganese 1-p-qEu pMn q) a(PO 4) 3The composition that F represents,
Wherein, 0＜p≤0.3,0＜q≤0.3 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
7. luminescent material according to claim 6, wherein said p and q are positive numbers, and each is less than 0.1.
8. luminescent material according to claim 6, wherein said p and q are positive numbers, and each is less than 0.05.
9. luminescent material according to claim 6, wherein said a from 4.7 to comprising in 5 the scope.
10. luminescent material according to claim 6, wherein said a from 4.9 to comprising in 5 the scope.
11. a luminescent material, described luminescent material are to be carried out activatory and had by (Ca by europium and manganese 1-p-qEu pMn q) a(PO 4) 3The composition that Cl represents,
Wherein, 0＜p≤0.2,0＜q≤0.2 and 4.5≤a≤5; Described luminescent material can the absorbing wavelength scope in the electromagnetic radiation of 315nm to 450nm and can send visible light.
12. luminescent material according to claim 11, wherein said p and q are positive numbers, and each is less than 0.1.
13. luminescent material according to claim 11, wherein said p and q are positive numbers, and each is less than 0.05.
14. luminescent material according to claim 11, wherein said a from 4.7 to comprising in 5 the scope.
15. luminescent material according to claim 11, wherein said a from 4.9 to comprising in 5 the scope.
16. a light source, described light source comprises:
At least one photodiode, it can send the electromagnetic radiation that has from near-ultraviolet light to the blue light range wavelength; And
At least a luminescent material, it is selected from by having general formula (Ca 1-x-y-z-p-qSr xBa yMg zEu pMn q) a(PO 4) 3(F, Cl, the group that luminescent material OH) is formed,
Wherein, 0≤x≤1,0≤y≤1,0≤z≤1,0＜p≤0.3,0＜q≤0.3,0＜x+y+z+p+q≤1 and 4.5≤a≤5; Described luminescent material can absorb the described electromagnetic radiation of being sent by described photodiode and can send the light with visible spectrum wavelength.
17. light source according to claim 16, wherein said at least one photodiode is a plurality of photodiodes, its each can both send wavelength region and be electromagnetic radiation from near-ultraviolet light to blue light.
18. according to claim 16 or 17 described light sources, wherein said photodiode emission wavelength ranges is in the electromagnetic radiation from 315nm to 450nm.
19. light source according to claim 18, wherein said photodiode emission wavelength ranges are the electromagnetic radiation from 350nm to 420nm.
20. light source according to claim 18, wherein said photodiode emission wavelength ranges are the electromagnetic radiation from 350nm to 400nm.
21. light source according to claim 16 also comprises at least a luminescent material, it is selected from by Sr 4Al 14O 25: Eu 2+, Sr 6P 6BO 20: Eu 2+, BaAl 8O 13: Eu 2+, (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+, and Sr 2Si 3O 62SrCl 2: Eu 2+The group of forming.
22. a light source, described light source comprises:
At least one photodiode, it can send wavelength region and be the electromagnetic radiation from near-ultraviolet light to blue light; And
Luminescent material, it has chemical formula (Ca 1-p-qEu pMn q) a(PO 4) 3F,
Wherein, 0＜p≤0.3,0＜q≤0.3 and 4.5≤a≤5; Described luminescent material can absorb the described electromagnetic radiation of being sent by described photodiode and can launch the light with visible spectrum wavelength.
23. light source according to claim 22, wherein said at least one photodiode is a plurality of photodiodes, its each can both send wavelength region and be electromagnetic radiation from near-ultraviolet light to blue light.
24. according to claim 22 or 23 described light sources, also comprise at least a luminescent material, it is selected from by Sr 4Al 14O 25: Eu 2+, Sr 6P 6BO 20: Eu 2+, BaAl 8O 13: Eu 2+, (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+, and Sr 2Si 3O 62SrCl 2: Eu 2+The group of forming.
25. a light source, described light source comprises:
At least one photodiode, it can send wavelength region and be the electromagnetic radiation from near-ultraviolet light to blue light; And
Luminescent material, it has chemical formula (Ca 1-p-qEu pMn q) a(PO 4) 3Cl,
Wherein, 0＜p≤0.3,0＜q≤0.3 and 4.5≤a≤5; Described luminescent material can absorb the described electromagnetic radiation of being sent by described photodiode and can launch the light with visible spectrum wavelength.
26. light source according to claim 25, wherein said at least one photodiode is a plurality of photodiodes, its each can both send wavelength region and be electromagnetic radiation from near-ultraviolet light to blue light.
27. according to claim 25 or 26 described light sources, also comprise at least a luminescent material, it is selected from by Sr 4Al 14O 25: Eu 2+, Sr 6P 6BO 20: Eu 2+, BaAl 8O 13: Eu 2+, (Sr, Mg, Ca, Ba) 5(PO 4) 3Cl:Eu 2+, and Sr 2Si 3O 62SrCl 2: Eu 2+The group of forming.
28. according to claim 25 or 26 described light sources, wherein said a plurality of photodiode emission wavelength ranges are in the electromagnetic radiation from 315nm to 450nm.
29. according to claim 25 or 26 described light sources, wherein said a plurality of photodiode emission wavelength ranges are the electromagnetic radiation from 350nm to 420nm.
30. according to claim 25 or 26 described light sources, wherein said a plurality of photodiode emission wavelength ranges are the electromagnetic radiation from 350nm to 400nm.
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Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501100B1 (en) * 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
MY134305A (en) * 2001-04-20 2007-12-31 Nichia Corp Light emitting device
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
US6798136B2 (en) * 2001-06-19 2004-09-28 Gelcore Llc Phosphor embedded die epoxy and lead frame modifications
DE10152217A1 (en) * 2001-10-23 2003-04-30 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Fluorescent composition for low pressure discharge lamps
US6825108B2 (en) * 2002-02-01 2004-11-30 Broadcom Corporation Ball grid array package fabrication with IC die support structures
DE10259946A1 (en) * 2002-12-20 2004-07-15 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Phosphors for converting the ultraviolet or blue emission of a light-emitting element into visible white radiation with very high color rendering
WO2004100279A2 (en) * 2003-04-30 2004-11-18 Cree, Inc. High-power solid state light emitter package
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
ATE480605T1 (en) * 2004-02-20 2010-09-15 Lumination Llc RULES FOR EFFICIENT LIGHT SOURCES WITH FLUORESCENT CONVERTED LEDS
US7837348B2 (en) 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
EP2803898B1 (en) * 2004-05-05 2020-08-19 Rensselaer Polytechnic Institute A light-emitting apparatus
US20050275333A1 (en) * 2004-06-14 2005-12-15 Ru-Shi Liu White light illumination device and method of manufacturing the same
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
EP1769050B1 (en) * 2004-07-06 2013-01-16 Lightscape Materials Inc. Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
US7352124B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light recycling illumination systems utilizing light emitting diodes
DE102004060358A1 (en) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Method for producing luminescence diode chips and luminescence diode chip
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
US8125137B2 (en) * 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
JP4890018B2 (en) * 2005-01-26 2012-03-07 株式会社小糸製作所 White light emitting phosphor and light emitting module using the same
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
DE102005031336B4 (en) * 2005-05-13 2008-01-31 Osram Opto Semiconductors Gmbh projection device
EP1894257A1 (en) * 2005-06-23 2008-03-05 Rensselaer Polytechnic Institute Package design for producing white light with short-wavelength leds and down-conversion materials
DE102005040558A1 (en) * 2005-08-26 2007-03-01 Osram Opto Semiconductors Gmbh Method for producing a luminescence diode chip and luminescence diode chip
DE102006004397A1 (en) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelectronic component, e.g. light emitting diode, has housing with housing material that is permeable for useful radiation and has radiation absorbing particles to adjust predetermined radiation or luminous intensity of radiation
DE102005052356A1 (en) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Illumination unit with luminescence diode chip and light guide, method for producing a lighting unit and LCD display
DE102005059524A1 (en) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Housing for an electromagnetic radiation-emitting optoelectronic component, component and method for producing a housing or a component
US20070080635A1 (en) * 2005-10-06 2007-04-12 Luminoso Photoelectric Technology Co. Light emitting device for visible light generation
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
WO2007061789A1 (en) * 2005-11-18 2007-05-31 Cree, Inc. Tile for solid state lighting panel
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
JP5614766B2 (en) 2005-12-21 2014-10-29 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Lighting device
CN101449097B (en) 2005-12-21 2012-03-07 科锐公司 Lighting device and lighting method
KR20090009772A (en) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. Lighting device
DE102006015117A1 (en) * 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting optoelectronic headlights, has gallium nitride based light emitting diode chip, which has two emission areas
US8998444B2 (en) * 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
JP5053363B2 (en) 2006-04-18 2012-10-17 クリー インコーポレイテッド Lighting device and lighting method
US9921428B2 (en) 2006-04-18 2018-03-20 Cree, Inc. Light devices, display devices, backlighting devices, edge-lighting devices, combination backlighting and edge-lighting devices
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
JP5681364B2 (en) 2006-04-20 2015-03-04 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Lighting device
US20070273282A1 (en) * 2006-05-25 2007-11-29 Gelcore Llc Optoelectronic device
US7969097B2 (en) 2006-05-31 2011-06-28 Cree, Inc. Lighting device with color control, and method of lighting
EP2029936B1 (en) 2006-05-31 2015-07-29 Cree, Inc. Lighting device and method of lighting
US8310143B2 (en) * 2006-08-23 2012-11-13 Cree, Inc. Lighting device and lighting method
US7703942B2 (en) * 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
DE102007020782A1 (en) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Radiation emitting device comprises a radiation-emitting functional layer emitting primary radiation in blue region, radiation conversion material arranged in beam path of the functional layer, and radiation conversion luminescent material
DE102006046199A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelectronic component, has semiconductor layer sequence with active area, which emits electromagnetic radiations with spectrum in operation
WO2008042740A1 (en) * 2006-10-03 2008-04-10 Sarnoff Corporation Metal silicate halide phosphors and led lighting devices using the same
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
US7901111B2 (en) * 2006-11-30 2011-03-08 Cree, Inc. Lighting device and lighting method
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
KR101446366B1 (en) 2006-12-07 2014-10-02 크리, 인코포레이티드 Lighting device and lighting method
TWI325885B (en) * 2006-12-07 2010-06-11 Ind Tech Res Inst Red phosphor and white light illumination device
US7959827B2 (en) * 2007-12-12 2011-06-14 General Electric Company Persistent phosphor
US8333907B2 (en) 2007-01-17 2012-12-18 Utc Fire & Security Corporation Articles using persistent phosphors
CN101657671B (en) 2007-02-22 2012-07-11 科锐公司 Lighting devices, methods of lighting, light filters and methods of filtering light
DE102007018837A1 (en) 2007-03-26 2008-10-02 Osram Opto Semiconductors Gmbh Method for producing a luminescence diode chip and luminescence diode chip
DE102007015474A1 (en) * 2007-03-30 2008-10-02 Osram Opto Semiconductors Gmbh Electromagnetic radiation-emitting optoelectronic component and method for producing an optoelectronic component
EP2156090B1 (en) 2007-05-08 2016-07-06 Cree, Inc. Lighting device and lighting method
JP2010527157A (en) 2007-05-08 2010-08-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device and lighting method
TW200912204A (en) 2007-05-08 2009-03-16 Cree Led Lighting Solutions Lighting device and lighting method
US10030824B2 (en) 2007-05-08 2018-07-24 Cree, Inc. Lighting device and lighting method
TWI422785B (en) 2007-05-08 2014-01-11 Cree Inc Lighting device and lighting method
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
DE102007042642A1 (en) 2007-09-07 2009-03-12 Osram Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic component and optoelectronic component
DE102007044597A1 (en) * 2007-09-19 2009-04-02 Osram Opto Semiconductors Gmbh Optoelectronic component
DE102007050876A1 (en) 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Optoelectronic component
DE102007054800A1 (en) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Luminescence conversion film for e.g. luminescence diode chip, has luminescence conversion material with fluorescent substance that is in form of organic particles, where film exhibits specific transparency to visible wavelength range
WO2009049019A1 (en) 2007-10-10 2009-04-16 Cree Led Lighting Solutions, Inc. Lighting device and method of making
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8866410B2 (en) 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
US8545723B2 (en) * 2007-12-12 2013-10-01 General Electric Company Persistent phosphor
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8916890B2 (en) * 2008-03-19 2014-12-23 Cree, Inc. Light emitting diodes with light filters
US8350461B2 (en) 2008-03-28 2013-01-08 Cree, Inc. Apparatus and methods for combining light emitters
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
CN102203970A (en) * 2008-09-04 2011-09-28 3M创新有限公司 Light source having light blocking components
DE102009010468A1 (en) 2008-11-13 2010-05-20 Osram Opto Semiconductors Gmbh Method for manufacturing layer of radiation-emitting functional material arranged with light conversion material particle for substrate, involves supplying composition, which contains solvent and organic bonding agent
US7967652B2 (en) 2009-02-19 2011-06-28 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8333631B2 (en) 2009-02-19 2012-12-18 Cree, Inc. Methods for combining light emitting devices in a package and packages including combined light emitting devices
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8648546B2 (en) * 2009-08-14 2014-02-11 Cree, Inc. High efficiency lighting device including one or more saturated light emitters, and method of lighting
US8901845B2 (en) 2009-09-24 2014-12-02 Cree, Inc. Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods
CN102630288B (en) 2009-09-25 2015-09-09 科锐公司 There is the lighting apparatus of low dazzle and high brightness levels uniformity
DE102010024758A1 (en) 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Method for producing an optical body, optical body and optoelectronic component with the optical body
TWI361215B (en) * 2009-10-12 2012-04-01 Ind Tech Res Inst Phosphors, fabricating method thereof, and light emitting device employing the same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US8508116B2 (en) 2010-01-27 2013-08-13 Cree, Inc. Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8104908B2 (en) * 2010-03-04 2012-01-31 Xicato, Inc. Efficient LED-based illumination module with high color rendering index
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US8896197B2 (en) 2010-05-13 2014-11-25 Cree, Inc. Lighting device and method of making
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
DE102010050832A1 (en) 2010-11-09 2012-05-10 Osram Opto Semiconductors Gmbh Luminescence conversion element, method for its production and optoelectronic component with luminescence conversion element
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
DE102010054280A1 (en) 2010-12-13 2012-06-14 Osram Opto Semiconductors Gmbh A method of producing a luminescent conversion material layer, composition therefor and device comprising such a luminescence conversion material layer
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
CN102730660A (en) * 2012-06-06 2012-10-17 韦丽梅 Preparation method of europium doped barium iron phosphate
US9353917B2 (en) 2012-09-14 2016-05-31 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
DE102012111123A1 (en) 2012-09-26 2014-03-27 Osram Opto Semiconductors Gmbh Light-emitting semiconductor device
CN104241262B (en) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 Light emitting device and display device
CN104087300B (en) * 2014-03-20 2017-03-15 王海容 A kind of thiophosphate fluorophor and its application
US9871173B2 (en) 2015-06-18 2018-01-16 Cree, Inc. Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
DE102017130136A1 (en) 2017-12-15 2019-06-19 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
CN110010785B (en) * 2019-04-15 2021-11-30 郑州大学 Yellow light LED based on inorganic non-lead-antimony-based perovskite quantum dots and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038204A (en) * 1968-05-03 1977-07-26 Westinghouse Electric Corporation Alkaline-earth metal halophosphate luminescent composition activated by divalent europium and method of preparing same
JPH05194946A (en) * 1992-01-23 1993-08-03 Toshiba Corp Stimulable phosphor and fluorescent lamp prepared therefrom
JPH05320638A (en) * 1992-05-15 1993-12-03 Toshiba Corp Phosphor and fluorescent lamp made therewith
US5367176A (en) * 1992-06-10 1994-11-22 Agfa-Gevaert, N.V. Photostimulable storage phosphor and its use in radiography
US5838101A (en) * 1992-10-28 1998-11-17 Gte Products Corporation Fluorescent lamp with improved CRI and brightness
EP1187167A1 (en) * 2000-09-05 2002-03-13 Philips Corporate Intellectual Property GmbH Colour display panel with blue phosphor layer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2488733A (en) 1942-06-17 1949-11-22 Gen Electric Alkaline earth halophosphate phosphors
US3513103A (en) * 1967-12-12 1970-05-19 Sylvania Electric Prod Fluorescent phosphor
JPS5720623B2 (en) 1972-04-20 1982-04-30
US4426600A (en) * 1977-09-06 1984-01-17 Gte Products Corporation Standard white fluorescent lamps employing blend
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6414426B1 (en) 1997-02-13 2002-07-02 Matsushita Electric Industrial Co., Ltd. High-efficiency light source
DE50008093D1 (en) 1999-07-23 2004-11-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh FLUORESCENT ARRANGEMENT WAVELENGTH-CONVERSION POWDERING AND LIGHT SOURCE
KR100431398B1 (en) 1999-07-23 2004-05-14 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 Luminous substance for a light source and light source associated therewith
DE10020465A1 (en) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with luminescence conversion element
US6685852B2 (en) * 2001-04-27 2004-02-03 General Electric Company Phosphor blends for generating white light from near-UV/blue light-emitting devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038204A (en) * 1968-05-03 1977-07-26 Westinghouse Electric Corporation Alkaline-earth metal halophosphate luminescent composition activated by divalent europium and method of preparing same
JPH05194946A (en) * 1992-01-23 1993-08-03 Toshiba Corp Stimulable phosphor and fluorescent lamp prepared therefrom
JPH05320638A (en) * 1992-05-15 1993-12-03 Toshiba Corp Phosphor and fluorescent lamp made therewith
US5367176A (en) * 1992-06-10 1994-11-22 Agfa-Gevaert, N.V. Photostimulable storage phosphor and its use in radiography
US5838101A (en) * 1992-10-28 1998-11-17 Gte Products Corporation Fluorescent lamp with improved CRI and brightness
EP1187167A1 (en) * 2000-09-05 2002-03-13 Philips Corporate Intellectual Property GmbH Colour display panel with blue phosphor layer

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