CN100345008C - 一种超分辨微结构衍射光学元件的制作方法 - Google Patents
一种超分辨微结构衍射光学元件的制作方法 Download PDFInfo
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- CN100345008C CN100345008C CNB2005100505219A CN200510050521A CN100345008C CN 100345008 C CN100345008 C CN 100345008C CN B2005100505219 A CNB2005100505219 A CN B2005100505219A CN 200510050521 A CN200510050521 A CN 200510050521A CN 100345008 C CN100345008 C CN 100345008C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000003287 optical effect Effects 0.000 title claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 44
- 238000001259 photo etching Methods 0.000 claims abstract description 33
- 239000007769 metal material Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 26
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims description 31
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 10
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 10
- 238000009738 saturating Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000001935 peptisation Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000003860 storage Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Abstract
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Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100505219A CN100345008C (zh) | 2005-06-29 | 2005-06-29 | 一种超分辨微结构衍射光学元件的制作方法 |
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CNB2005100505219A CN100345008C (zh) | 2005-06-29 | 2005-06-29 | 一种超分辨微结构衍射光学元件的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN1710449A CN1710449A (zh) | 2005-12-21 |
CN100345008C true CN100345008C (zh) | 2007-10-24 |
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CNB2005100505219A Expired - Fee Related CN100345008C (zh) | 2005-06-29 | 2005-06-29 | 一种超分辨微结构衍射光学元件的制作方法 |
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CN (1) | CN100345008C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5144212B2 (ja) * | 2007-10-29 | 2013-02-13 | 浜松ホトニクス株式会社 | 光学マスクおよび光源装置 |
CN102097296B (zh) | 2010-10-09 | 2012-10-10 | 北京大学 | 一种半导体纳米圆环的制备方法 |
US10436722B2 (en) | 2014-05-22 | 2019-10-08 | University Of Science And Technology Of China | Positive/negative phase shift bimetallic zone plate |
CN105506547B (zh) * | 2015-12-15 | 2019-02-01 | 苏州晶鼎鑫光电科技有限公司 | 一种光学元件金属化镀膜的纳米掩膜方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2459675Y (zh) * | 2000-10-19 | 2001-11-14 | 中国科学院上海技术物理研究所 | 组合型大口径衍射光学元件 |
JP2002072834A (ja) * | 2000-08-29 | 2002-03-12 | Hitachi Chem Co Ltd | ホログラフィーによる光制御素子の製造方法および光制御素子 |
JP2003228160A (ja) * | 2002-02-06 | 2003-08-15 | Canon Inc | フォトマスク、それを用いて作製した微細光学素子製造用の型、微細光学素子、および該微細光学素子を有する光学系、光学機器、露光装置、デバイス製造方法 |
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2005
- 2005-06-29 CN CNB2005100505219A patent/CN100345008C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002072834A (ja) * | 2000-08-29 | 2002-03-12 | Hitachi Chem Co Ltd | ホログラフィーによる光制御素子の製造方法および光制御素子 |
CN2459675Y (zh) * | 2000-10-19 | 2001-11-14 | 中国科学院上海技术物理研究所 | 组合型大口径衍射光学元件 |
JP2003228160A (ja) * | 2002-02-06 | 2003-08-15 | Canon Inc | フォトマスク、それを用いて作製した微細光学素子製造用の型、微細光学素子、および該微細光学素子を有する光学系、光学機器、露光装置、デバイス製造方法 |
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CN1710449A (zh) | 2005-12-21 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Hangzhou Aoke Photoelectric Equipment Co., Ltd. Assignor: Zhejiang University of Technology Contract fulfillment period: 2008.9.25 to 2013.9.24 contract change Contract record no.: 2008330000925 Denomination of invention: Method for producings uper-resolution micro structure diffraction optical element Granted publication date: 20071024 License type: Exclusive license Record date: 2008.10.9 |
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LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.9.25 TO 2013.9.24; CHANGE OF CONTRACT Name of requester: HANGZHOU OAK PV EQUIPMENT CO., LTD. Effective date: 20081009 |
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Granted publication date: 20071024 Termination date: 20140629 |
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