CN102097296B - 一种半导体纳米圆环的制备方法 - Google Patents
一种半导体纳米圆环的制备方法 Download PDFInfo
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- CN102097296B CN102097296B CN201010506128A CN201010506128A CN102097296B CN 102097296 B CN102097296 B CN 102097296B CN 201010506128 A CN201010506128 A CN 201010506128A CN 201010506128 A CN201010506128 A CN 201010506128A CN 102097296 B CN102097296 B CN 102097296B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000002105 nanoparticle Substances 0.000 abstract 3
- 238000001259 photo etching Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 2
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- 101100433727 Caenorhabditis elegans got-1.2 gene Proteins 0.000 description 1
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- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 238000002164 ion-beam lithography Methods 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (6)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010506128A CN102097296B (zh) | 2010-10-09 | 2010-10-09 | 一种半导体纳米圆环的制备方法 |
PCT/CN2011/079525 WO2012045258A1 (zh) | 2010-10-09 | 2011-09-09 | 一种半导体纳米圆环的制备方法 |
US13/379,752 US8722312B2 (en) | 2010-10-09 | 2011-09-09 | Method for fabricating semiconductor nano circular ring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010506128A CN102097296B (zh) | 2010-10-09 | 2010-10-09 | 一种半导体纳米圆环的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102097296A CN102097296A (zh) | 2011-06-15 |
CN102097296B true CN102097296B (zh) | 2012-10-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201010506128A Active CN102097296B (zh) | 2010-10-09 | 2010-10-09 | 一种半导体纳米圆环的制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8722312B2 (zh) |
CN (1) | CN102097296B (zh) |
WO (1) | WO2012045258A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102509697A (zh) * | 2011-11-01 | 2012-06-20 | 北京大学 | 一种制备超细线条的方法 |
CN102495526B (zh) * | 2011-11-16 | 2014-11-26 | 中国科学院物理研究所 | 光学曝光方法及其用于制备硅材料竖直中空结构的方法 |
CN103091982B (zh) * | 2013-01-23 | 2014-06-18 | 华中科技大学 | 一种微米管制造工艺 |
CN104576322B (zh) * | 2013-10-23 | 2017-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种金属同心圆环的制备方法 |
EP3364249A1 (en) * | 2017-02-15 | 2018-08-22 | Centre National De La Recherche Scientifique | Optical lithography process adapted for a sample comprising at least one fragile light emitter |
CN108682723B (zh) * | 2018-05-22 | 2019-07-05 | 中国科学院半导体研究所 | 制备氮化镓基纳米环结构的方法 |
CN111453693B (zh) * | 2020-04-21 | 2023-06-23 | 南方科技大学 | 一种纳米环的制备方法 |
CN112992661B (zh) * | 2020-11-23 | 2021-11-23 | 重庆康佳光电技术研究院有限公司 | 微型led及其制程方法 |
CN115072656B (zh) * | 2022-07-22 | 2023-04-11 | 清华大学 | 一种微纳结构及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001117213A (ja) * | 1999-08-10 | 2001-04-27 | Nikon Corp | フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法 |
CN1226180C (zh) * | 2003-07-05 | 2005-11-09 | 吉林大学 | 二维有序纳米环、纳米孔和纳米自组装单层膜的制备方法 |
CN100345008C (zh) * | 2005-06-29 | 2007-10-24 | 浙江工业大学 | 一种超分辨微结构衍射光学元件的制作方法 |
CN100554140C (zh) * | 2006-11-23 | 2009-10-28 | 南京大学 | 气相自组装生长硅量子环纳米结构的制备方法 |
JP4842164B2 (ja) * | 2007-02-02 | 2011-12-21 | 富士通セミコンダクター株式会社 | フォトマスク及び半導体装置の製造方法 |
CN100563036C (zh) * | 2007-07-11 | 2009-11-25 | 中国科学院半导体研究所 | 一种利用图形化衬底提高GaN基LED发光效率的方法 |
-
2010
- 2010-10-09 CN CN201010506128A patent/CN102097296B/zh active Active
-
2011
- 2011-09-09 WO PCT/CN2011/079525 patent/WO2012045258A1/zh active Application Filing
- 2011-09-09 US US13/379,752 patent/US8722312B2/en active Active
Non-Patent Citations (2)
Title |
---|
Pennelli Giovanni等.Top down fabrication of long silicon nanowire devices by means of lateral oxidation.《MICROELECTRONIC ENGINEERING 》.2009, |
Pennelli Giovanni等.Top down fabrication of long silicon nanowire devices by means of lateral oxidation.《MICROELECTRONIC ENGINEERING 》.2009, * |
Also Published As
Publication number | Publication date |
---|---|
US20120190202A1 (en) | 2012-07-26 |
CN102097296A (zh) | 2011-06-15 |
WO2012045258A1 (zh) | 2012-04-12 |
US8722312B2 (en) | 2014-05-13 |
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Effective date of registration: 20130523 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |