CL2016000452A1 - Lingotes de silicona multicristalina, aleacion maestra de silicona, procedimiento para aumentar el rendimiento de lingotes de silicona multicristalina para celulas solares - Google Patents

Lingotes de silicona multicristalina, aleacion maestra de silicona, procedimiento para aumentar el rendimiento de lingotes de silicona multicristalina para celulas solares

Info

Publication number
CL2016000452A1
CL2016000452A1 CL2016000452A CL2016000452A CL2016000452A1 CL 2016000452 A1 CL2016000452 A1 CL 2016000452A1 CL 2016000452 A CL2016000452 A CL 2016000452A CL 2016000452 A CL2016000452 A CL 2016000452A CL 2016000452 A1 CL2016000452 A1 CL 2016000452A1
Authority
CL
Chile
Prior art keywords
silicone
ingots
multicrystalline
master alloy
procedure
Prior art date
Application number
CL2016000452A
Other languages
English (en)
Inventor
Gunnar Halvorsen
Anne-Karin Soiland
Original Assignee
Elkem Solar As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO20131216A external-priority patent/NO336720B1/no
Application filed by Elkem Solar As filed Critical Elkem Solar As
Publication of CL2016000452A1 publication Critical patent/CL2016000452A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Lingotes de silicio multicristalino solidificados direccionalmente, CARACTERIZADOS porque dicho lingote comprende calcio elemental añadido a un baño de silicio fundido de alta pureza en una cantidad elegida entre al menos uno de los siguientes rangos: 5-9,99 ppm en peso (ppmp), 10-500 pprnp, 500-550 ppmp.; Aleación maestra de silicio; Método para aumentar el rendimiento de lingotes de silicio multicristalino solidificados direccionalmente; y uso de una aleación maestra
CL2016000452A 2013-09-09 2016-02-26 Lingotes de silicona multicristalina, aleacion maestra de silicona, procedimiento para aumentar el rendimiento de lingotes de silicona multicristalina para celulas solares CL2016000452A1 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20131216A NO336720B1 (no) 2013-09-09 2013-09-09 Fremgangsmåte for forbedring av effektiviteten av solceller.
PCT/NO2013/000046 WO2015034367A1 (en) 2013-09-09 2013-10-01 Method for improving efficiency of solar cells
NO20140621A NO339608B1 (no) 2013-09-09 2014-05-15 Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller

Publications (1)

Publication Number Publication Date
CL2016000452A1 true CL2016000452A1 (es) 2016-12-09

Family

ID=52628714

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016000452A CL2016000452A1 (es) 2013-09-09 2016-02-26 Lingotes de silicona multicristalina, aleacion maestra de silicona, procedimiento para aumentar el rendimiento de lingotes de silicona multicristalina para celulas solares

Country Status (10)

Country Link
US (2) US10483428B2 (es)
EP (1) EP3044350A4 (es)
CN (1) CN105723020B (es)
BR (1) BR112016005004B1 (es)
CA (1) CA2920969C (es)
CL (1) CL2016000452A1 (es)
NO (1) NO339608B1 (es)
SA (1) SA516370689B1 (es)
SG (1) SG11201601750SA (es)
WO (1) WO2015034373A1 (es)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002135B1 (en) * 1977-11-21 1982-11-03 Union Carbide Corporation Improved refined metallurgical silicon and process for the production thereof
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3804248A1 (de) * 1988-02-11 1989-08-24 Siemens Ag Verfahren zum abtrennen von verunreinigungen aus einer siliziumschmelze durch gerichtete erstarrung
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
NO180532C (no) * 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
US6319313B1 (en) 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
NO313132B1 (no) * 1999-12-08 2002-08-19 Elkem Materials Fremgangsmåte for rensing av silisium
WO2002040732A1 (en) 2000-11-15 2002-05-23 G.T. Equipment Technologies Inc. A protective layer for quartz crucibles used for silicon crystallization
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP4850501B2 (ja) 2005-12-06 2012-01-11 新日鉄マテリアルズ株式会社 高純度シリコンの製造装置及び製造方法
JP5153636B2 (ja) 2006-08-30 2013-02-27 京セラ株式会社 シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法
CN102119122A (zh) * 2008-08-11 2011-07-06 住友化学株式会社 以半金属元素或金属元素为主成分的材料的提纯方法
US8329133B2 (en) * 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
CN101423220B (zh) 2008-11-17 2011-04-06 上海普罗新能源有限公司 一种多温区硅材料提纯与铸锭的方法及其装置
NO331026B1 (no) * 2009-09-23 2011-09-12 Elkem Solar As Fremgangsmate for fremstilling av hoyrent silisium
KR20130074464A (ko) * 2011-12-26 2013-07-04 주식회사 포스코 실리콘의 탈린방법
US20130192302A1 (en) 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use

Also Published As

Publication number Publication date
CA2920969C (en) 2019-11-05
US10483428B2 (en) 2019-11-19
US20180309014A1 (en) 2018-10-25
BR112016005004B1 (pt) 2022-10-11
CN105723020A (zh) 2016-06-29
SG11201601750SA (en) 2016-04-28
CA2920969A1 (en) 2015-03-12
SA516370689B1 (ar) 2019-09-12
EP3044350A1 (en) 2016-07-20
NO339608B1 (no) 2017-01-09
WO2015034373A1 (en) 2015-03-12
CN105723020B (zh) 2019-04-09
NO20140621A1 (no) 2015-03-10
US20160225937A1 (en) 2016-08-04
BR112016005004A2 (pt) 2021-08-03
EP3044350A4 (en) 2017-05-17
US10693031B2 (en) 2020-06-23

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