WO2015034367A1 - Method for improving efficiency of solar cells - Google Patents

Method for improving efficiency of solar cells Download PDF

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Publication number
WO2015034367A1
WO2015034367A1 PCT/NO2013/000046 NO2013000046W WO2015034367A1 WO 2015034367 A1 WO2015034367 A1 WO 2015034367A1 NO 2013000046 W NO2013000046 W NO 2013000046W WO 2015034367 A1 WO2015034367 A1 WO 2015034367A1
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WO
WIPO (PCT)
Prior art keywords
silicon
ingots
ingot
solar cells
efficiency
Prior art date
Application number
PCT/NO2013/000046
Other languages
French (fr)
Inventor
Gunnar Halvorsen
Anne Karin SØILAND
Original Assignee
Elkem Solar As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elkem Solar As filed Critical Elkem Solar As
Priority to NO20140621A priority Critical patent/NO339608B1/en
Priority to BR112016005004-5A priority patent/BR112016005004B1/en
Priority to CA2920969A priority patent/CA2920969C/en
Priority to CN201480049485.1A priority patent/CN105723020B/en
Priority to US14/916,406 priority patent/US10483428B2/en
Priority to EP14843034.1A priority patent/EP3044350A4/en
Priority to PCT/NO2014/050165 priority patent/WO2015034373A1/en
Priority to SG11201601750SA priority patent/SG11201601750SA/en
Publication of WO2015034367A1 publication Critical patent/WO2015034367A1/en
Priority to CL2016000452A priority patent/CL2016000452A1/en
Priority to SA516370689A priority patent/SA516370689B1/en
Priority to US16/023,317 priority patent/US10693031B2/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Definitions

  • the present invention relates to a method for improving the efficiency of solar cells made from wafers cut from the lower and upper part of a directional solidified silicon ingot.
  • red zone By directional solidification of silicon for production of multicrystalline silicon ingots a so-called "red zone” is formed along the outer part of the ingot, in the lower end of the ingot and at the top end of the ingot.
  • the read zone is typically 2-3 cm thick.
  • the red zone is characterized by short life time for minority carriers. When measuring the life time of miniority carriers in the red zone area it is below the quality requirement of above 2 [is.
  • the red zone area of directionally solidified ingots is therefore normally cut away and thus not used for wafers for solar cell production.
  • the main type of defect is caused by Fe and O diffusing into the solid silicon from the crucible and/or from the coating used in the crucible.
  • Another type of defect can be dislocations.
  • the Group II element or elements are added to the silicon in an amount of between 20 and 250 ppmw.
  • calcium, beryllium, magnesium, barium, or strontium are added to the silicon as Group II element, calcium being the most preferred Group II element.
  • the Group II element or elements can be added to the silicon in the crucible for directional solidification before the silicon is melted or after the silicon is melted.
  • Another way of adding the Group II elements to the silicon is to add small amounts of compounds of Group II elements to the coating used in the crucible for the directional solidification.
  • the addition can be oxides, carbides, sulphides or fluorides of the Group II elements.
  • the Group II elements mixed into the coating will during the directional solidification diffuse into the silicon and react with oxygen in the molten silicon to form elemental Group II elements in the liquid silicon.
  • Preferably calcium oxide is mixed into the coating.
  • Still another way of adding the Group II element to the silicon is to provide a very thin coating layer containing compounds of Group II elements on the top of the conventional coating layer in the crucible used for the directional solidification.
  • the thin coating on top of the conventional coating layer compound calcium oxide. It has surprisingly been found that the addition of small amounts of Group II elements, particularly calcium, substantially reduces the extent of the red zone in directionally solidified multicrystalline silicon ingots.
  • Ingot D was compensated silicon produced by Elkem Solar AS, (ESSTM), with addition of 40 ppmw calcium, according to the present invention.
  • the height of the Ingots A to D was 145 mm and the cross-section area was 220 mm x 220 mm.
  • Figure 4 shows the efficiency of solar cells made from wafers cut along the whole height of Ingot C and Ingot D. It can be seen that the solar cells made from ingot D at an average have a higher efficiency then the solar cells made from wafers cut along the height of Ingot C. This shows that the addition of calcium does not effect the efficiency for solar cells made from wafers cut from the main part of the ingots but in effect tend to increase the efficiency.
  • Wafers were cut along the height of ingots E to G and processed to solar cells using conventional processing methods and the efficiency of the solar cells were measured, and the result are shown in Figure 5 and 6.
  • Figure 5 shows the efficiency of solar cells made from wafers cut from the lower part of ingots E, F and G.
  • the efficiency of solar cells made from wafers from ingots F (compensated silicon to which was added 100 ppmw calcium), and ingot G (polysilicon to which was added 100 ppmw calcium)
  • Figure 6 shows the efficiency of solars cells made from wafers cut along the whole height of ingots E, F and G.
  • Example 2 shows that addition of 100 ppmw calcium increases the efficiency of the lower part of the ingots substantially and even more then for the wafers of Example 1 with addition of 40 ppmw calcium.
  • the Examples shows clearly that red zone is more or less eliminated with addition of calcium to the silicon according to the present invention.
  • the results also shows that thinner side cuts and top cuts can be done while maintaining a high efficiency of the solar cells.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to a method for minimizing or removing the red zone in multicrystalline silicon ingots. This is obtained by adding one or more Group II elements in an amount between 10 and 500 ppmw to the silicon before the silicon is subjected to directional solidification in a crucible.

Description

Title of Invention
Method for improving efficiency of solar cells
Field of Invention. The present invention relates to a method for improving the efficiency of solar cells made from wafers cut from the lower and upper part of a directional solidified silicon ingot.
Background art
By directional solidification of silicon for production of multicrystalline silicon ingots a so-called "red zone" is formed along the outer part of the ingot, in the lower end of the ingot and at the top end of the ingot. The read zone is typically 2-3 cm thick. The red zone is characterized by short life time for minority carriers. When measuring the life time of miniority carriers in the red zone area it is below the quality requirement of above 2 [is. The red zone area of directionally solidified ingots is therefore normally cut away and thus not used for wafers for solar cell production.
The red zone area of the directionally solidified multicrystalline silicon ingot in this way reduces the yield of the ingot.
The reason for formation of red zone at the lower end, along the walls and at the upper end of the directional solidified silicon ingots has often been related to different kinds of defects; see Y.Boulfrad: Investigation of the Red Zone of multicrystalline Silicon Ingots for Solar cells;
Doctoral Thesis at NTNU, Norway 2012:84. The main type of defect is caused by Fe and O diffusing into the solid silicon from the crucible and/or from the coating used in the crucible. Another type of defect can be dislocations. There can also be a synergistic effect between the different types of defects.
In order to increase the yield of the silicon ingots it is a wish to minimize or totally avoid formation of the red zone, particularly in the lower end of the silicon ingots which would increase the part of the silicon ingots suitable for wafers and solar cell processing.
Description of the invention.
The present invention thus relates to a method for minimizing or removing the red zone in multicrystalline silicon ingots, the method being characterized in that one or more Group II elements in an amount between 10 and 500 ppmw are added to the silicon before the silicon is subjected to directional solidification in a crucible.
According to a preferred embodiment the Group II element or elements are added to the silicon in an amount of between 20 and 250 ppmw.
Preferably calcium, beryllium, magnesium, barium, or strontium are added to the silicon as Group II element, calcium being the most preferred Group II element.
The Group II element or elements can be added to the silicon in the crucible for directional solidification before the silicon is melted or after the silicon is melted. Another way of adding the Group II elements to the silicon is to add small amounts of compounds of Group II elements to the coating used in the crucible for the directional solidification. The addition can be oxides, carbides, sulphides or fluorides of the Group II elements. The Group II elements mixed into the coating will during the directional solidification diffuse into the silicon and react with oxygen in the molten silicon to form elemental Group II elements in the liquid silicon. Preferably calcium oxide is mixed into the coating.
Still another way of adding the Group II element to the silicon is to provide a very thin coating layer containing compounds of Group II elements on the top of the conventional coating layer in the crucible used for the directional solidification. Preferable the thin coating on top of the conventional coating layer compound calcium oxide. It has surprisingly been found that the addition of small amounts of Group II elements, particularly calcium, substantially reduces the extent of the red zone in directionally solidified multicrystalline silicon ingots.
The effect of reducing the red zone by adding Group II element or elements to the silicon before directional solidification has been found to be effective both for boron doped polysilicon and for so-called compensated high purity silicon which contains both boron and phosphorus.
A shorter part of the lower end of the directionally solidified silicon ingot can thus be cut away before watering, thereby increasing the yield of the ingots. The same is true for the upper end of the ingot and the sides of the ingots.
Short description of the drawings. Figure 1 is a diagram showing the efficiency of solar cells made from wafers cut from the lower part of ingots A and B in Example 1 as a function of mm from bottom of the ingots;
Figure 2 is a diagram showing the efficiency of solar cells made from wafers cut from the whole height of ingots A and B in Example 1 as a function of mm from bottom of the ingots;
Figure 3 is a diagram showing the efficiency of solar cells made from wafers cut from the lower part of ingots C and D in Example 1 as a function of mm from bottom of the ingots;
Figure 4 is a diagram showing the efficiency of solar cells made from wafers cut from the whole height of ingots C and D in Example 1 as a function of mm from bottom of the ingots;
Figure 5 is a diagram showing the efficiency of solar cells made from wafers cut from the lower part of ingots E, F and G in Example 2 as a function of mm from bottom of the ingots; Figure 6 is a diagram showing the efficiency of solar cells made from wafers cut from the chole height of ingots E, F, and G in Example 2 as a function of mm from bottom of the ingots; Detailed description of the invention.
Example 1.
Four directionally solidified multicrystalline silicon ingots A, B, C and D of 16 kg each are produced at the same time in a furnace with four solidification chambers . This means that all four ingots A to D were produced under exactly the same conditions. Ingot A was a polysilicon ingot which was doped with boron to obtain a resistivity of between 1 and 1.3 ohm cm measured at the lower end of the ingot without addition of calcium. Ingot B was a polysilicon with addition of 40 ppmw calcium, according to the present invention. Ingot C was compensated silicon containing both boron and phosphorus produced by Elkem Solar AS, (ESS™), and having a resistivity of between 1 and 1.3 ohm cm measured at the lower end of the ingot. Ingot D was compensated silicon produced by Elkem Solar AS, (ESS™), with addition of 40 ppmw calcium, according to the present invention. The height of the Ingots A to D was 145 mm and the cross-section area was 220 mm x 220 mm.
5 mm was cut away from the lower end of the ingots A to D. As stated above normally 3-5 cm are cut from ingots used for wafering. Normal cuts where made on the long sides of the ingots. The reduction of red zone could thus only be demonstrated in the lower part of the ingots. Wafers were cut along the height of the four ingots A to D and processed to solar cells using conventional processing methods and the efficiency of the solar cells were measured. The result for efficiency of solar cells made from ingots A and B are shown in Figure 1 and 2 and the results for ingots C and D made from compensated silicon produced by Elkem Solar are shown in Figures 3 and 4. Figure 1 shows the efficiency of solar cells made from wafers cut from the lower part of ingots A and B. As shown in Figure 1 the efficiency of solar cells made from wafers from ingot B (polysilicon to which was added 40 ppmw calcium), was much higher then for the solar cells made from wafers from the lower part of ingot A, which did not contain calcium.
It can further be seen from Figure 1 that solar cells made from wafers cut only about 5 mm from the bottom of Ingot B had an efficiency of almost 16% while a solar cell made from a wafer cut about 10 mm from the bottom of ingot A showed an efficiency of below 15%. Finally it can be seen from Figure 1 that the solar cells made from the lower part of Ingot B reached about 7% efficiency for wafers cut 15 mm from the lower end of the ingot while the same efficiency for solar cells made from wafers from Ingot A first reaches 17% efficiency when cut about 25 mm from the lower end of ingot A. Figure 2 shows the efficiency of solars cells made from wafers cut along the whole height of Ingot A and Ingot B.
It can be seen from Figure 2 that the solar cells made from wafers from ingot B have a high efficiency along the total height of the Ingot.
Figure 3 shows the efficiency of solar cells made from wafers cut from the lower parts of Ingots C and D. As shown in Figure 3, solar cells made from wafers cut from the lower end of ingot D (compensated silicon produced by Elkem AS with addition of 40 ppmw calcium) shows a much higher efficiency then solar cells made from wafers from the lower end of Ingot C (compensated silicon produced by Elkem AS without calcium addition).
Figure 4 shows the efficiency of solar cells made from wafers cut along the whole height of Ingot C and Ingot D. It can be seen that the solar cells made from ingot D at an average have a higher efficiency then the solar cells made from wafers cut along the height of Ingot C. This shows that the addition of calcium does not effect the efficiency for solar cells made from wafers cut from the main part of the ingots but in effect tend to increase the efficiency.
The substantial increase in efficiency for solar cells made from wafers cut at the lower end of Ingots B and D containing 40 ppmw calcium compared to the efficiency for solar cells made from wafers cut from ingots A and C, shows that the addition of calcium to the silicon before directional solidification substantial! decreases the red zone in the silicon ingots, particularly in the lower end of the ingots.
Example 2.
Three directionally solidified multicrystalline silicon ingots E, F, and G of 16 kg each were produced in the same four chamber furnace as described in Example 1. Ingot E was made from compensated silicon containing both boron and phosphorous produced by Elkem Solar AS, (ESS™), having a resistivity of between 1 and 1.3 ohm cm measured at the lower and of the Ingot. Ingot F was compensated silicon produced by Elkem Solar, (ESS™), with addition of 100 ppmw calcium according to the invention . Ingot G was polysilicon with addition of 100 ppmw calcium and doped with boron to obtain a resistivity of between 1 and 1.3 ohm cm measured at the lower end of the ingot.
The height and cross-section of ingots E to G were the same as described in Example 1.
5 mm was cut away from the lower ends of ingots E to G. Normal cuts were made from the sides of the ingots.
Wafers were cut along the height of ingots E to G and processed to solar cells using conventional processing methods and the efficiency of the solar cells were measured, and the result are shown in Figure 5 and 6. Figure 5 shows the efficiency of solar cells made from wafers cut from the lower part of ingots E, F and G. As shown in Figure 5 the efficiency of solar cells made from wafers from ingots F (compensated silicon to which was added 100 ppmw calcium), and ingot G (polysilicon to which was added 100 ppmw calcium), was much higher then for the solar cells made from wafers from the lower part of ingot E, which did not contain calcium. It can further be seen from Figure 5 that solar cells made from wafers cut only about 5 mm from the bottom of ingot F and G had an efficiency of more than 16% to above 17% while solar cells made from wafers cut about 10 mm from the bottom of ingot E, showed an efficiency of below 15%. Finally it can be seen from Figure 5 that the solar cells made from the lower part of ingot F and G reached about 17% efficiency for wafers cut only 5 mm from the lower end of the ingots while the same efficiency for solar cells made from wafers from ingot E first reaches 17% efficiency when cut about 25 mm from the lower end of ingot A.
Figure 6 shows the efficiency of solars cells made from wafers cut along the whole height of ingots E, F and G.
It can be seen from Figure 6 that the solar cells made from wafers from ingot F and G have a high efficiency along the total height of the ingots even towards the top of the ingots. For ingot E the efficiency starts to decrease at about 65 mm from the bottom of the ingot.
Example 2 shows that addition of 100 ppmw calcium increases the efficiency of the lower part of the ingots substantially and even more then for the wafers of Example 1 with addition of 40 ppmw calcium.
The Examples shows clearly that red zone is more or less eliminated with addition of calcium to the silicon according to the present invention. The results also shows that thinner side cuts and top cuts can be done while maintaining a high efficiency of the solar cells.

Claims

Claims
1 Method for minimizing or removing the red zone in multicrystalline silicon ingots,
ch a ra cte rize d in that one or more Group II elements in an amount between 10 and 500 ppmw are added to the silicon before the silicon is subjected to directional solidification in a crucible.
Method according to claim ^characterized in that the Group II element or elements are added to the silicon in an amount of between 20 and 250 ppmw.
Method according to claim 1 or 2, c h a ra cte r i ze d in that calcium is added to the silicon as Group II element.
Method according to claim 1 or2 c h a ra cte r i z e d in that beryllium, magnesium, barium or strontium is added to the silicon as Group II element.
Method according to claim 1 or 2, characterized in that compounds of Group II elements are added to the coating in the crucible used for directional solidification.
Method according to claim 5, c h a racte ri zed in that calcium oxide is added to the coating in the crucible used for directional solidification.
Method according to claim 1 or 2, characterized in that compounds of Group II element is provided to the silicon by applying a layer of compounds of Group II element as a layer on top of the conventional coating layer in the crucible for directional solidification.
Method according to claim 7, c h a r a c t e r i z e d in that the Group II compound is calcium oxide.
PCT/NO2013/000046 2013-09-09 2013-10-01 Method for improving efficiency of solar cells WO2015034367A1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NO20140621A NO339608B1 (en) 2013-09-09 2014-05-15 Multicrystalline silicon ginger, silicon master alloy, process for increasing the yield of multicrystalline silicon ginger for solar cells
EP14843034.1A EP3044350A4 (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
CA2920969A CA2920969C (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
CN201480049485.1A CN105723020B (en) 2013-09-09 2014-09-09 Polycrystal silicon ingot, silicon master alloy, polycrystal silicon ingot for improving solar battery yield method
US14/916,406 US10483428B2 (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
BR112016005004-5A BR112016005004B1 (en) 2013-09-09 2014-09-09 METHOD TO INCREASE THE YIELD OF SILICON INGOTS
PCT/NO2014/050165 WO2015034373A1 (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
SG11201601750SA SG11201601750SA (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
CL2016000452A CL2016000452A1 (en) 2013-09-09 2016-02-26 Multicrystalline silicone ingots, silicone master alloy, procedure to increase the performance of multicrystalline silicone ingots for solar cells
SA516370689A SA516370689B1 (en) 2013-09-09 2016-03-07 Multicrystalline silicon ingots and silicon master alloy
US16/023,317 US10693031B2 (en) 2013-09-09 2018-06-29 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20131216A NO336720B1 (en) 2013-09-09 2013-09-09 Process for improving the efficiency of solar cells.
NO20131216 2013-09-09

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WO2015034367A1 true WO2015034367A1 (en) 2015-03-12

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