SG11201601750SA - Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells - Google Patents
Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cellsInfo
- Publication number
- SG11201601750SA SG11201601750SA SG11201601750SA SG11201601750SA SG11201601750SA SG 11201601750S A SG11201601750S A SG 11201601750SA SG 11201601750S A SG11201601750S A SG 11201601750SA SG 11201601750S A SG11201601750S A SG 11201601750SA SG 11201601750S A SG11201601750S A SG 11201601750SA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- multicrystalline
- ingots
- silicon ingots
- multicrystalline silicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
- C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20131216A NO336720B1 (en) | 2013-09-09 | 2013-09-09 | Process for improving the efficiency of solar cells. |
| PCT/NO2013/000046 WO2015034367A1 (en) | 2013-09-09 | 2013-10-01 | Method for improving efficiency of solar cells |
| NO20140621A NO339608B1 (en) | 2013-09-09 | 2014-05-15 | Multicrystalline silicon ginger, silicon master alloy, process for increasing the yield of multicrystalline silicon ginger for solar cells |
| PCT/NO2014/050165 WO2015034373A1 (en) | 2013-09-09 | 2014-09-09 | Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201601750SA true SG11201601750SA (en) | 2016-04-28 |
Family
ID=52628714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201601750SA SG11201601750SA (en) | 2013-09-09 | 2014-09-09 | Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US10483428B2 (en) |
| EP (1) | EP3044350A4 (en) |
| CN (1) | CN105723020B (en) |
| BR (1) | BR112016005004B1 (en) |
| CA (1) | CA2920969C (en) |
| CL (1) | CL2016000452A1 (en) |
| NO (1) | NO339608B1 (en) |
| SA (1) | SA516370689B1 (en) |
| SG (1) | SG11201601750SA (en) |
| WO (1) | WO2015034373A1 (en) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002135B1 (en) * | 1977-11-21 | 1982-11-03 | Union Carbide Corporation | Improved refined metallurgical silicon and process for the production thereof |
| US4200621A (en) | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| NO152551C (en) * | 1983-02-07 | 1985-10-16 | Elkem As | PROCEDURE FOR THE PREPARATION OF PURE SILICONE. |
| DE3804248A1 (en) * | 1988-02-11 | 1989-08-24 | Siemens Ag | Process for removing impurities from a silicon melt by directed solidification |
| US5431869A (en) | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
| NO180532C (en) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Process for removing contaminants from molten silicon |
| US6319313B1 (en) | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
| NO313132B1 (en) * | 1999-12-08 | 2002-08-19 | Elkem Materials | Method of purifying silicon |
| AU2001288566A1 (en) | 2000-11-15 | 2002-05-27 | Gt Equipment Technologies Inc. | A protective layer for quartz crucibles used for silicon crystallization |
| NO333319B1 (en) * | 2003-12-29 | 2013-05-06 | Elkem As | Silicon material for the production of solar cells |
| JP4850501B2 (en) | 2005-12-06 | 2012-01-11 | 新日鉄マテリアルズ株式会社 | High purity silicon manufacturing apparatus and manufacturing method |
| JP5153636B2 (en) | 2006-08-30 | 2013-02-27 | 京セラ株式会社 | Method for forming mold for manufacturing silicon ingot, method for manufacturing substrate for solar cell element, and method for manufacturing solar cell element |
| CA2733647A1 (en) * | 2008-08-11 | 2010-02-18 | Sumitomo Chemical Company, Limited | Method for purifying material containing metalloid element or metal element as main component |
| US8329133B2 (en) * | 2008-11-03 | 2012-12-11 | Gt Crystal Systems, Llc | Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon |
| CN101423220B (en) | 2008-11-17 | 2011-04-06 | 上海普罗新能源有限公司 | Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof |
| NO331026B1 (en) * | 2009-09-23 | 2011-09-12 | Elkem Solar As | Process for producing high pure silicon |
| KR20130074464A (en) * | 2011-12-26 | 2013-07-04 | 주식회사 포스코 | Method for dephosphorizing silicon |
| US20130192302A1 (en) | 2012-02-01 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucibles for holding molten material and methods for producing them and for their use |
-
2014
- 2014-05-15 NO NO20140621A patent/NO339608B1/en unknown
- 2014-09-09 WO PCT/NO2014/050165 patent/WO2015034373A1/en active Application Filing
- 2014-09-09 SG SG11201601750SA patent/SG11201601750SA/en unknown
- 2014-09-09 US US14/916,406 patent/US10483428B2/en active Active
- 2014-09-09 EP EP14843034.1A patent/EP3044350A4/en active Pending
- 2014-09-09 BR BR112016005004-5A patent/BR112016005004B1/en active IP Right Grant
- 2014-09-09 CA CA2920969A patent/CA2920969C/en active Active
- 2014-09-09 CN CN201480049485.1A patent/CN105723020B/en active Active
-
2016
- 2016-02-26 CL CL2016000452A patent/CL2016000452A1/en unknown
- 2016-03-07 SA SA516370689A patent/SA516370689B1/en unknown
-
2018
- 2018-06-29 US US16/023,317 patent/US10693031B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3044350A1 (en) | 2016-07-20 |
| US10483428B2 (en) | 2019-11-19 |
| CN105723020A (en) | 2016-06-29 |
| CA2920969C (en) | 2019-11-05 |
| CL2016000452A1 (en) | 2016-12-09 |
| CA2920969A1 (en) | 2015-03-12 |
| WO2015034373A1 (en) | 2015-03-12 |
| US10693031B2 (en) | 2020-06-23 |
| CN105723020B (en) | 2019-04-09 |
| EP3044350A4 (en) | 2017-05-17 |
| US20180309014A1 (en) | 2018-10-25 |
| SA516370689B1 (en) | 2019-09-12 |
| NO339608B1 (en) | 2017-01-09 |
| BR112016005004A2 (en) | 2021-08-03 |
| US20160225937A1 (en) | 2016-08-04 |
| NO20140621A1 (en) | 2015-03-10 |
| BR112016005004B1 (en) | 2022-10-11 |
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