CH671303A5 - - Google Patents
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- Publication number
- CH671303A5 CH671303A5 CH402686A CH402686A CH671303A5 CH 671303 A5 CH671303 A5 CH 671303A5 CH 402686 A CH402686 A CH 402686A CH 402686 A CH402686 A CH 402686A CH 671303 A5 CH671303 A5 CH 671303A5
- Authority
- CH
- Switzerland
- Prior art keywords
- frit
- reaction chamber
- gas
- plasma reactor
- reactor according
- Prior art date
Links
- 238000005530 etching Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 23
- 238000007747 plating Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT317085A AT386315B (de) | 1985-11-04 | 1985-11-04 | Plasmareaktor zum aetzen von leiterplatten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH671303A5 true CH671303A5 (enrdf_load_stackoverflow) | 1989-08-15 |
Family
ID=3546420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH402686A CH671303A5 (enrdf_load_stackoverflow) | 1985-11-04 | 1986-10-09 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS62112791A (enrdf_load_stackoverflow) |
| AT (1) | AT386315B (enrdf_load_stackoverflow) |
| CH (1) | CH671303A5 (enrdf_load_stackoverflow) |
| DE (1) | DE3635647A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4014351A1 (de) * | 1989-05-10 | 1990-11-15 | Mitsubishi Electric Corp | Vorrichtung zur herstellung und bearbeitung von halbleitern |
| CN105575796A (zh) * | 2014-10-13 | 2016-05-11 | 友威科技股份有限公司 | 用于印刷电路板的等离子体蚀刻装置 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63186875A (ja) * | 1987-01-29 | 1988-08-02 | Tadahiro Omi | 表面反応成膜装置 |
| US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
| WO1990010092A1 (en) * | 1989-02-24 | 1990-09-07 | Massachusetts Institute Of Technology | A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition |
| US5054420A (en) * | 1989-09-29 | 1991-10-08 | Alcan International Limited | Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics |
| US5134963A (en) * | 1991-10-28 | 1992-08-04 | International Business Machines Corporation | LPCVD reactor for high efficiency, high uniformity deposition |
| US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378170A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Continuous processor for gas plasma etching |
| US4297162A (en) * | 1979-10-17 | 1981-10-27 | Texas Instruments Incorporated | Plasma etching using improved electrode |
| US4289598A (en) * | 1980-05-03 | 1981-09-15 | Technics, Inc. | Plasma reactor and method therefor |
| FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| DE3312307A1 (de) * | 1983-04-06 | 1984-10-11 | Sando Iron Works Co., Ltd., Wakayama, Wakayama | Vorrichtung zum behandeln eines textilguts |
-
1985
- 1985-11-04 AT AT317085A patent/AT386315B/de not_active IP Right Cessation
-
1986
- 1986-10-09 CH CH402686A patent/CH671303A5/de not_active IP Right Cessation
- 1986-10-21 DE DE19863635647 patent/DE3635647A1/de not_active Ceased
- 1986-11-04 JP JP26084986A patent/JPS62112791A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4014351A1 (de) * | 1989-05-10 | 1990-11-15 | Mitsubishi Electric Corp | Vorrichtung zur herstellung und bearbeitung von halbleitern |
| CN105575796A (zh) * | 2014-10-13 | 2016-05-11 | 友威科技股份有限公司 | 用于印刷电路板的等离子体蚀刻装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3635647A1 (de) | 1987-05-07 |
| JPH0129875B2 (enrdf_load_stackoverflow) | 1989-06-14 |
| AT386315B (de) | 1988-08-10 |
| ATA317085A (de) | 1987-12-15 |
| JPS62112791A (ja) | 1987-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |