AT386315B - Plasmareaktor zum aetzen von leiterplatten - Google Patents

Plasmareaktor zum aetzen von leiterplatten

Info

Publication number
AT386315B
AT386315B AT317085A AT317085A AT386315B AT 386315 B AT386315 B AT 386315B AT 317085 A AT317085 A AT 317085A AT 317085 A AT317085 A AT 317085A AT 386315 B AT386315 B AT 386315B
Authority
AT
Austria
Prior art keywords
plasma reactor
assemble pcb
pcb
assemble
reactor
Prior art date
Application number
AT317085A
Other languages
English (en)
Other versions
ATA317085A (de
Inventor
Richard Dipl Ing Ehrenfeldner
Dieter Dr Wagner
Original Assignee
Voest Alpine Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Voest Alpine Ag filed Critical Voest Alpine Ag
Priority to AT317085A priority Critical patent/AT386315B/de
Priority to CH402686A priority patent/CH671303A5/de
Priority to DE19863635647 priority patent/DE3635647A1/de
Priority to JP26084986A priority patent/JPS62112791A/ja
Publication of ATA317085A publication Critical patent/ATA317085A/de
Application granted granted Critical
Publication of AT386315B publication Critical patent/AT386315B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
AT317085A 1985-11-04 1985-11-04 Plasmareaktor zum aetzen von leiterplatten AT386315B (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT317085A AT386315B (de) 1985-11-04 1985-11-04 Plasmareaktor zum aetzen von leiterplatten
CH402686A CH671303A5 (de) 1985-11-04 1986-10-09
DE19863635647 DE3635647A1 (de) 1985-11-04 1986-10-21 Plasmareaktor zum aetzen von leiterplatten od. dgl.
JP26084986A JPS62112791A (ja) 1985-11-04 1986-11-04 サ−キツトボ−ド等をエツチングするためのプラズマ反応器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT317085A AT386315B (de) 1985-11-04 1985-11-04 Plasmareaktor zum aetzen von leiterplatten

Publications (2)

Publication Number Publication Date
ATA317085A ATA317085A (de) 1987-12-15
AT386315B true AT386315B (de) 1988-08-10

Family

ID=3546420

Family Applications (1)

Application Number Title Priority Date Filing Date
AT317085A AT386315B (de) 1985-11-04 1985-11-04 Plasmareaktor zum aetzen von leiterplatten

Country Status (4)

Country Link
JP (1) JPS62112791A (de)
AT (1) AT386315B (de)
CH (1) CH671303A5 (de)
DE (1) DE3635647A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186875A (ja) * 1987-01-29 1988-08-02 Tadahiro Omi 表面反応成膜装置
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
JPH02295116A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体製造装置
US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
CN105575796A (zh) * 2014-10-13 2016-05-11 友威科技股份有限公司 用于印刷电路板的等离子体蚀刻装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2757498A1 (de) * 1976-12-22 1978-06-29 Tokyo Shibaura Electric Co Kontinuierlich arbeitende gasplasma- aetzvorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
DE3312307A1 (de) * 1983-04-06 1984-10-11 Sando Iron Works Co., Ltd., Wakayama, Wakayama Vorrichtung zum behandeln eines textilguts

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2757498A1 (de) * 1976-12-22 1978-06-29 Tokyo Shibaura Electric Co Kontinuierlich arbeitende gasplasma- aetzvorrichtung

Also Published As

Publication number Publication date
CH671303A5 (de) 1989-08-15
JPH0129875B2 (de) 1989-06-14
DE3635647A1 (de) 1987-05-07
JPS62112791A (ja) 1987-05-23
ATA317085A (de) 1987-12-15

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee