CH670914A5 - - Google Patents

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Publication number
CH670914A5
CH670914A5 CH3647/86A CH364786A CH670914A5 CH 670914 A5 CH670914 A5 CH 670914A5 CH 3647/86 A CH3647/86 A CH 3647/86A CH 364786 A CH364786 A CH 364786A CH 670914 A5 CH670914 A5 CH 670914A5
Authority
CH
Switzerland
Prior art keywords
membrane
memory
memory according
substrate
states
Prior art date
Application number
CH3647/86A
Other languages
German (de)
English (en)
Inventor
Radivoje Popovic
Katalin Solt
Heinz Lienhard
Original Assignee
Landis & Gyr Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag
Priority to CH3647/86A priority Critical patent/CH670914A5/de
Priority to AT87111361T priority patent/ATE72075T1/de
Priority to DE8787111361T priority patent/DE3776237D1/de
Priority to EP87111361A priority patent/EP0259614B1/de
Priority to JP62218110A priority patent/JPS6373554A/ja
Priority to YU01667/87A priority patent/YU166787A/xx
Priority to NO873761A priority patent/NO873761L/no
Publication of CH670914A5 publication Critical patent/CH670914A5/de
Priority to US07/417,338 priority patent/US4979149A/en
Priority to GR920400471T priority patent/GR3004073T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
CH3647/86A 1986-09-08 1986-09-10 CH670914A5 (US20020130353A1-20020919-M00001.png)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US20020130353A1-20020919-M00001.png) 1986-09-10 1986-09-10
AT87111361T ATE72075T1 (de) 1986-09-10 1987-08-06 Speicher fuer digitale elektronische signale.
DE8787111361T DE3776237D1 (de) 1986-09-10 1987-08-06 Speicher fuer digitale elektronische signale.
EP87111361A EP0259614B1 (de) 1986-09-10 1987-08-06 Speicher für digitale elektronische Signale
JP62218110A JPS6373554A (ja) 1986-09-10 1987-09-02 デジタル信号記憶装置
YU01667/87A YU166787A (en) 1986-09-08 1987-09-08 Memory for digital electronic signals process for preparing derivatives 2,3,4,5,6,7-hexahydro-2,7-methano-1,5-benzoxazinone
NO873761A NO873761L (no) 1986-09-10 1987-09-09 Lager for digitale elektroniske signaler.
US07/417,338 US4979149A (en) 1986-09-10 1989-10-05 Non-volatile memory device including a micro-mechanical storage element
GR920400471T GR3004073T3 (US20020130353A1-20020919-M00001.png) 1986-09-10 1992-03-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US20020130353A1-20020919-M00001.png) 1986-09-10 1986-09-10

Publications (1)

Publication Number Publication Date
CH670914A5 true CH670914A5 (US20020130353A1-20020919-M00001.png) 1989-07-14

Family

ID=4260485

Family Applications (1)

Application Number Title Priority Date Filing Date
CH3647/86A CH670914A5 (US20020130353A1-20020919-M00001.png) 1986-09-08 1986-09-10

Country Status (8)

Country Link
US (1) US4979149A (US20020130353A1-20020919-M00001.png)
EP (1) EP0259614B1 (US20020130353A1-20020919-M00001.png)
JP (1) JPS6373554A (US20020130353A1-20020919-M00001.png)
AT (1) ATE72075T1 (US20020130353A1-20020919-M00001.png)
CH (1) CH670914A5 (US20020130353A1-20020919-M00001.png)
DE (1) DE3776237D1 (US20020130353A1-20020919-M00001.png)
GR (1) GR3004073T3 (US20020130353A1-20020919-M00001.png)
NO (1) NO873761L (US20020130353A1-20020919-M00001.png)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE131115T1 (de) * 1991-10-14 1995-12-15 Landis & Gyr Tech Innovat Sicherheitselement.
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
DE59509883D1 (de) * 1995-08-09 2002-01-10 Infineon Technologies Ag Speichervorrichtung und Herstellungsverfahren
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
WO1997029538A1 (en) * 1996-02-10 1997-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bistable microactuator with coupled membranes
US6237590B1 (en) * 1997-09-18 2001-05-29 Delsys Pharmaceutical Corporation Dry powder delivery system apparatus
US6188301B1 (en) * 1998-11-13 2001-02-13 General Electric Company Switching structure and method of fabrication
US6525483B1 (en) * 1998-12-22 2003-02-25 Koninklijke Philips Electronics N.V. Display device comprising a light guide with electrode voltages dependent on previously applied electrode voltages
US6211580B1 (en) * 1998-12-29 2001-04-03 Honeywell International Inc. Twin configuration for increased life time in touch mode electrostatic actuators
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
EP1159758A1 (en) * 1999-03-18 2001-12-05 Cavendish Kinetics Limited Flash memory cell having a flexible element
WO2001003208A1 (en) * 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
JP2001102597A (ja) 1999-09-30 2001-04-13 Fuji Electric Co Ltd 半導体構造およびその製造方法
US6716657B1 (en) * 2000-05-26 2004-04-06 Agere Systems Inc Method for interconnecting arrays of micromechanical devices
US6473361B1 (en) 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
CN1643431A (zh) * 2002-03-26 2005-07-20 皇家飞利浦电子股份有限公司 包含光透射的第一板和光吸收装置的显示器件
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
CN100490044C (zh) * 2002-07-26 2009-05-20 松下电器产业株式会社 开关
JP4186727B2 (ja) * 2002-07-26 2008-11-26 松下電器産業株式会社 スイッチ
US6972881B1 (en) 2002-11-21 2005-12-06 Nuelight Corp. Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
FR2852441A1 (fr) * 2003-03-14 2004-09-17 St Microelectronics Sa Dispositif de memoire
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
CA2528804A1 (en) * 2003-06-09 2005-01-06 Nantero, Inc Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
FR2858459B1 (fr) * 2003-08-01 2006-03-10 Commissariat Energie Atomique Commutateur micro-mecanique bistable, methode d'actionnement et procede de realisation correspondant
EP1665278A4 (en) 2003-08-13 2007-11-07 Nantero Inc NANOROUS-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS AND CIRCUITS MADE THEREFROM
CN101562049B (zh) * 2003-08-13 2012-09-05 南泰若股份有限公司 具有多个控件的基于纳米管的开关元件及由其制成的电路
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7215229B2 (en) * 2003-09-17 2007-05-08 Schneider Electric Industries Sas Laminated relays with multiple flexible contacts
JP4626142B2 (ja) * 2003-11-18 2011-02-02 株式会社日立製作所 装置およびそれを用いたデータ処理方法
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
EP1751765A4 (en) * 2004-05-24 2009-05-20 Univ Boston CONTROLLABLE NANOCHEMICAL MEMORY ELEMENT
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
WO2007024204A2 (en) * 2004-07-19 2007-03-01 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
TWI399864B (zh) 2004-09-16 2013-06-21 Nantero Inc 使用奈米管之發光體及其製造方法
CA2581248A1 (en) 2004-09-22 2006-12-28 Nantero, Inc. Random access memory including nanotube switching elements
JP5244392B2 (ja) * 2004-10-15 2013-07-24 エヌエックスピー ビー ヴィ Ｒｆｉｄシステムを動作させる方法
US7046539B1 (en) 2004-11-02 2006-05-16 Sandia Corporation Mechanical memory
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7579618B2 (en) * 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
US7349236B2 (en) * 2005-06-24 2008-03-25 Xerox Corporation Electromechanical memory cell with torsional movement
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
GB0515980D0 (en) * 2005-08-03 2005-09-07 Cavendish Kinetics Ltd Memory cell for a circuit and method of operation therefor
WO2007030423A2 (en) 2005-09-06 2007-03-15 Nantero, Inc. Carbon nanotube resonators
JP2009510785A (ja) * 2005-09-27 2009-03-12 コーネル・リサーチ・ファウンデーション・インコーポレーテッド 形状メモリ素子
GB0525025D0 (en) * 2005-12-08 2006-01-18 Cavendish Kinetics Ltd memory Cell and Array
US7336527B1 (en) * 2005-12-14 2008-02-26 International Business Machines Corporation Electromechanical storage device
KR100827705B1 (ko) * 2006-10-23 2008-05-07 삼성전자주식회사 비 휘발성 메모리 소자 및 그의 제조방법
KR100834829B1 (ko) * 2006-12-19 2008-06-03 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
WO2008124084A2 (en) 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
WO2009008929A2 (en) 2007-04-09 2009-01-15 Northeastern University Bistable nanoswitch
JP5026144B2 (ja) * 2007-05-18 2012-09-12 日本電信電話株式会社 記憶素子
WO2009005908A2 (en) * 2007-05-22 2009-01-08 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8134220B2 (en) * 2007-06-22 2012-03-13 Nantero Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US20130113810A1 (en) * 2011-11-04 2013-05-09 Qualcomm Mems Technologies, Inc. Sidewall spacers along conductive lines
ITTO20120224A1 (it) 2012-03-15 2013-09-16 St Microelectronics Srl Elemento di memoria elettromeccanico integrato e memoria elettronica comprendente il medesimo
KR101928344B1 (ko) * 2012-10-24 2018-12-13 삼성전자주식회사 나노 공진 장치 및 방법
FR3085786B1 (fr) * 2018-09-11 2021-02-19 Commissariat Energie Atomique Cellule de memorisation en logique capacitive

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087810A (en) * 1976-06-30 1978-05-02 International Business Machines Corporation Membrane deformographic display, and method of making
FR2376549A1 (fr) * 1977-01-04 1978-07-28 Thomson Csf Systeme bistable a electrets
US4113360A (en) * 1977-03-28 1978-09-12 Siemens Aktiengesellschaft Indicating device for illustrating symbols of all kinds
US4229732A (en) * 1978-12-11 1980-10-21 International Business Machines Corporation Micromechanical display logic and array
US4441791A (en) * 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
EP0046873A1 (en) * 1980-09-02 1982-03-10 Texas Instruments Incorporated Deformable mirror light modulator
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
US4736202A (en) * 1984-08-21 1988-04-05 Bos-Knox, Ltd. Electrostatic binary switching and memory devices
US4704707A (en) * 1984-08-21 1987-11-03 Bos-Knox, Ltd. Electrostatic random access memory
US4570139A (en) * 1984-12-14 1986-02-11 Eaton Corporation Thin-film magnetically operated micromechanical electric switching device
WO1986003879A1 (en) * 1984-12-19 1986-07-03 Simpson George R Electrostatic binary switching and memory devices

Also Published As

Publication number Publication date
NO873761L (no) 1988-03-11
JPS6373554A (ja) 1988-04-04
DE3776237D1 (de) 1992-03-05
ATE72075T1 (de) 1992-02-15
US4979149A (en) 1990-12-18
NO873761D0 (no) 1987-09-09
EP0259614A1 (de) 1988-03-16
EP0259614B1 (de) 1992-01-22
GR3004073T3 (US20020130353A1-20020919-M00001.png) 1993-03-31

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