CH661379A5 - Mit licht steuerbarer thyristor. - Google Patents
Mit licht steuerbarer thyristor. Download PDFInfo
- Publication number
- CH661379A5 CH661379A5 CH7122/82A CH712282A CH661379A5 CH 661379 A5 CH661379 A5 CH 661379A5 CH 7122/82 A CH7122/82 A CH 7122/82A CH 712282 A CH712282 A CH 712282A CH 661379 A5 CH661379 A5 CH 661379A5
- Authority
- CH
- Switzerland
- Prior art keywords
- light
- light guide
- controllable
- radius
- thyristor
- Prior art date
Links
- 230000004044 response Effects 0.000 claims description 5
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 claims description 3
- 230000004043 responsiveness Effects 0.000 claims description 3
- 206010034960 Photophobia Diseases 0.000 claims 2
- 208000013469 light sensitivity Diseases 0.000 claims 2
- 239000012780 transparent material Substances 0.000 claims 2
- 239000000835 fiber Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000120694 Thestor Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Guides In General And Applications Therefor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56197339A JPS5897864A (ja) | 1981-12-07 | 1981-12-07 | 光トリガサイリスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
CH661379A5 true CH661379A5 (de) | 1987-07-15 |
Family
ID=16372820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH7122/82A CH661379A5 (de) | 1981-12-07 | 1982-12-07 | Mit licht steuerbarer thyristor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4500164A (enrdf_load_stackoverflow) |
JP (1) | JPS5897864A (enrdf_load_stackoverflow) |
CH (1) | CH661379A5 (enrdf_load_stackoverflow) |
DE (1) | DE3245278A1 (enrdf_load_stackoverflow) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4944567A (en) * | 1987-11-05 | 1990-07-31 | Allied-Signal Inc. | Fiber optic laser beam delivery system |
FR2633401B1 (fr) * | 1988-06-24 | 1990-10-05 | Labo Electronique Physique | Dispositif semiconducteur comprenant un guide de lumiere integre qui presente au moins une partie rectiligne et une partie courbe |
US5553177A (en) * | 1992-01-15 | 1996-09-03 | Ceramoptec Industries, Inc. | Optical fiber device which increases light intensity |
US5333218A (en) * | 1993-05-24 | 1994-07-26 | General Electric Company | Optical fiber tapered output end preparation for improved high power laser/fiber delivered beam quality |
JP2850729B2 (ja) * | 1993-12-21 | 1999-01-27 | 日本電気株式会社 | Ccdセンサ |
JP3369404B2 (ja) * | 1996-06-14 | 2003-01-20 | 三菱電機株式会社 | 光トリガサイリスタ |
DE19626661A1 (de) * | 1996-07-03 | 1998-01-08 | Asea Brown Boveri | Lichtzündbarer Leistungshalbleiter |
JPH10239559A (ja) * | 1997-02-26 | 1998-09-11 | Sumitomo Wiring Syst Ltd | 光伝送装置 |
US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
DE19826022C1 (de) * | 1998-06-10 | 1999-06-17 | Siemens Ag | Vorrichtung und Verfahren zur Ansteuerung von Thyristoren |
CN101669207B (zh) * | 2007-05-24 | 2012-07-04 | 东芝三菱电机产业系统株式会社 | 半导体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3796881A (en) * | 1972-04-28 | 1974-03-12 | Westinghouse Electric Corp | Encapsulated light activated semiconductor device |
JPS50140144A (enrdf_load_stackoverflow) * | 1974-04-27 | 1975-11-10 | ||
US4167746A (en) * | 1975-03-03 | 1979-09-11 | General Electric Company | Radiation triggered thyristor with light focussing guide |
US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
IN152332B (enrdf_load_stackoverflow) * | 1978-08-03 | 1983-12-24 | Westinghouse Electric Corp | |
US4305640A (en) * | 1978-11-24 | 1981-12-15 | National Research Development Corporation | Laser beam annealing diffuser |
JPS561577A (en) * | 1979-06-19 | 1981-01-09 | Toshiba Corp | Light-driving semiconductor device |
US4368481A (en) * | 1979-06-19 | 1983-01-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Light-driven semiconductor device |
JPS5662379A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Optical operated semiconductor |
JPS5949709B2 (ja) * | 1979-10-13 | 1984-12-04 | 三菱電機株式会社 | 光点弧サイリスタ装置 |
-
1981
- 1981-12-07 JP JP56197339A patent/JPS5897864A/ja active Pending
-
1982
- 1982-12-07 DE DE19823245278 patent/DE3245278A1/de active Granted
- 1982-12-07 US US06/447,598 patent/US4500164A/en not_active Expired - Lifetime
- 1982-12-07 CH CH7122/82A patent/CH661379A5/de unknown
Also Published As
Publication number | Publication date |
---|---|
DE3245278A1 (de) | 1983-07-14 |
US4500164A (en) | 1985-02-19 |
DE3245278C2 (enrdf_load_stackoverflow) | 1990-03-29 |
JPS5897864A (ja) | 1983-06-10 |
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