CH659484A5 - Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. - Google Patents

Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. Download PDF

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Publication number
CH659484A5
CH659484A5 CH1970/84A CH197084A CH659484A5 CH 659484 A5 CH659484 A5 CH 659484A5 CH 1970/84 A CH1970/84 A CH 1970/84A CH 197084 A CH197084 A CH 197084A CH 659484 A5 CH659484 A5 CH 659484A5
Authority
CH
Switzerland
Prior art keywords
cathode
atomization
arrangement according
shaped
substrate
Prior art date
Application number
CH1970/84A
Other languages
German (de)
English (en)
Inventor
Urs Wegmann
Eduard Dr Dipl-Ing Rille
Original Assignee
Balzers Hochvakuum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Hochvakuum filed Critical Balzers Hochvakuum
Priority to CH1970/84A priority Critical patent/CH659484A5/de
Priority to DE19853506227 priority patent/DE3506227A1/de
Priority to GB08508897A priority patent/GB2157715B/en
Priority to FR8505777A priority patent/FR2563239B1/fr
Priority to US06/725,016 priority patent/US4622121A/en
Priority to JP60084356A priority patent/JPS60234970A/ja
Publication of CH659484A5 publication Critical patent/CH659484A5/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CH1970/84A 1984-04-19 1984-04-19 Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. CH659484A5 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH1970/84A CH659484A5 (de) 1984-04-19 1984-04-19 Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
DE19853506227 DE3506227A1 (de) 1984-04-19 1985-02-22 Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung
GB08508897A GB2157715B (en) 1984-04-19 1985-04-04 Apparatus for cathodic sputtering
FR8505777A FR2563239B1 (fr) 1984-04-19 1985-04-17 Agencement pour revetir des substrats par pulverisation cathodique
US06/725,016 US4622121A (en) 1984-04-19 1985-04-18 Apparatus for coating materials by cathode sputtering
JP60084356A JPS60234970A (ja) 1984-04-19 1985-04-19 カソードスパツタによる基板被覆装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1970/84A CH659484A5 (de) 1984-04-19 1984-04-19 Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.

Publications (1)

Publication Number Publication Date
CH659484A5 true CH659484A5 (de) 1987-01-30

Family

ID=4222870

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1970/84A CH659484A5 (de) 1984-04-19 1984-04-19 Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.

Country Status (6)

Country Link
US (1) US4622121A (en:Method)
JP (1) JPS60234970A (en:Method)
CH (1) CH659484A5 (en:Method)
DE (1) DE3506227A1 (en:Method)
FR (1) FR2563239B1 (en:Method)
GB (1) GB2157715B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0981150A3 (de) * 1998-08-14 2004-12-01 Leybold Systems GmbH Vorrichtung zum Beschichten von Substraten mit dünnen Schichten

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277460A (ja) * 1985-09-30 1987-04-09 Tokuda Seisakusho Ltd 放電電極
DE3619194A1 (de) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
IT1211938B (it) * 1987-11-27 1989-11-08 Siv Soc Italiana Vetro Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
US5126028A (en) * 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
JPH03247761A (ja) * 1990-02-23 1991-11-05 Yoshihisa Nakamura スパッタターゲット装置
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
DE4042417C2 (de) * 1990-07-17 1993-11-25 Balzers Hochvakuum Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben
US5174875A (en) * 1990-08-29 1992-12-29 Materials Research Corporation Method of enhancing the performance of a magnetron sputtering target
KR100231397B1 (ko) * 1991-01-28 1999-11-15 튜그룰 야사르 음극 스퍼터링용 타겟
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
DE4123274C2 (de) * 1991-07-13 1996-12-19 Leybold Ag Vorrichtung zum Beschichten von Bauteilen bzw. Formteilen durch Kathodenzerstäubung
US5194131A (en) * 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US5277779A (en) * 1992-04-14 1994-01-11 Henshaw William F Rectangular cavity magnetron sputtering vapor source
CH690805A5 (de) * 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
US5378341A (en) * 1993-10-13 1995-01-03 The United States Of America As Represented By The Secretary Of The Air Force Conical magnetron sputter source
US5798029A (en) * 1994-04-22 1998-08-25 Applied Materials, Inc. Target for sputtering equipment
EP0704878A1 (en) * 1994-09-27 1996-04-03 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6235170B1 (en) * 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6432286B1 (en) * 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
DE19827461A1 (de) * 1998-06-19 1999-12-23 Leybold Systems Gmbh Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer
US6231725B1 (en) * 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
US6497796B1 (en) 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6179973B1 (en) * 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
GB2346155B (en) * 1999-01-06 2003-06-25 Trikon Holdings Ltd Sputtering apparatus
JP2000226655A (ja) * 1999-02-02 2000-08-15 Matsushita Electric Ind Co Ltd スパッタリング装置
US6620298B1 (en) * 1999-04-23 2003-09-16 Matsushita Electric Industrial Co., Ltd. Magnetron sputtering method and apparatus
US6409890B1 (en) 1999-07-27 2002-06-25 Applied Materials, Inc. Method and apparatus for forming a uniform layer on a workpiece during sputtering
US6444100B1 (en) 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
US6605195B2 (en) 2000-04-14 2003-08-12 Seagate Technology Llc Multi-layer deposition process using four ring sputter sources
US6406599B1 (en) 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
US6471831B2 (en) 2001-01-09 2002-10-29 Novellus Systems, Inc. Apparatus and method for improving film uniformity in a physical vapor deposition system
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
EP1254970A1 (de) 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
US6613199B1 (en) 2001-10-25 2003-09-02 Novellus Systems, Inc. Apparatus and method for physical vapor deposition using an open top hollow cathode magnetron
US6683425B1 (en) 2002-02-05 2004-01-27 Novellus Systems, Inc. Null-field magnetron apparatus with essentially flat target
US6743342B2 (en) * 2002-03-12 2004-06-01 Applied Materials, Inc. Sputtering target with a partially enclosed vault
US20030183518A1 (en) * 2002-03-27 2003-10-02 Glocker David A. Concave sputtering apparatus
US6589408B1 (en) * 2002-03-27 2003-07-08 Advanced Micro Devices, Inc. Non-planar copper alloy target for plasma vapor deposition systems
US6589398B1 (en) * 2002-03-28 2003-07-08 Novellus Systems, Inc. Pasting method for eliminating flaking during nitride sputtering
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US6929720B2 (en) * 2003-06-09 2005-08-16 Tokyo Electron Limited Sputtering source for ionized physical vapor deposition of metals
US7179351B1 (en) 2003-12-15 2007-02-20 Novellus Systems, Inc. Methods and apparatus for magnetron sputtering
US7569123B1 (en) 2004-05-25 2009-08-04 Novellus Systems, Inc. Optimizing target erosion using multiple erosion regions in a magnetron sputtering apparatus
JP2006037127A (ja) * 2004-07-23 2006-02-09 Cyg Gijutsu Kenkyusho Kk スパッタ電極構造
US20060054494A1 (en) * 2004-09-16 2006-03-16 Veeco Instruments Inc. Physical vapor deposition apparatus for depositing thin multilayer films and methods of depositing such films
US20060207871A1 (en) 2005-03-16 2006-09-21 Gennady Yumshtyk Sputtering devices and methods
US20060207872A1 (en) * 2005-03-21 2006-09-21 Sergey Mishin Dual magnetron thin film deposition system
US20070158179A1 (en) * 2006-01-11 2007-07-12 Anthony Ciancio Method and apparatus for improving symmetry of a layer deposited on a semiconductor substrate
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7510634B1 (en) * 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
EP2425036B8 (en) 2009-04-27 2017-12-20 Evatec AG Reactive sputtering with multiple sputter sources
WO2015015669A1 (ja) * 2013-08-02 2015-02-05 キヤノンアネルバ株式会社 スパッタリング装置およびスパッタリング用ターゲット
US9368330B2 (en) 2014-05-02 2016-06-14 Bh5773 Ltd Sputtering targets and methods
JP6423290B2 (ja) * 2015-03-06 2018-11-14 東京エレクトロン株式会社 成膜装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE722131C (de) * 1937-08-15 1942-07-01 Bernhard Berghaus Anordnung und Verfahren zum Metallisieren von Gegenstaenden mittels Kathodenzerstaeubung
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
US4457825A (en) * 1980-05-16 1984-07-03 Varian Associates, Inc. Sputter target for use in a sputter coating source
US4461688A (en) * 1980-06-23 1984-07-24 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method
DE3070700D1 (en) * 1980-08-08 1985-07-04 Battelle Development Corp Cylindrical magnetron sputtering cathode
US4434038A (en) * 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPS5943546B2 (ja) * 1981-05-26 1984-10-23 日本真空技術株式会社 スパツタリング装置
US4444635A (en) * 1981-07-22 1984-04-24 Hitachi, Ltd. Film forming method
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4385979A (en) * 1982-07-09 1983-05-31 Varian Associates, Inc. Target assemblies of special materials for use in sputter coating apparatus
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus
CA1184880A (en) * 1982-11-18 1985-04-02 Kovilvila Ramachandran Sputtering apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0981150A3 (de) * 1998-08-14 2004-12-01 Leybold Systems GmbH Vorrichtung zum Beschichten von Substraten mit dünnen Schichten

Also Published As

Publication number Publication date
JPS60234970A (ja) 1985-11-21
FR2563239B1 (fr) 1987-11-06
DE3506227A1 (de) 1985-10-31
GB8508897D0 (en) 1985-05-09
JPH0352534B2 (en:Method) 1991-08-12
GB2157715B (en) 1987-10-07
GB2157715A (en) 1985-10-30
FR2563239A1 (fr) 1985-10-25
US4622121A (en) 1986-11-11

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