CH634605A5 - Process for the preparation of coarsely crystalline and monocrystalline metal layers - Google Patents

Process for the preparation of coarsely crystalline and monocrystalline metal layers Download PDF

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Publication number
CH634605A5
CH634605A5 CH449578A CH449578A CH634605A5 CH 634605 A5 CH634605 A5 CH 634605A5 CH 449578 A CH449578 A CH 449578A CH 449578 A CH449578 A CH 449578A CH 634605 A5 CH634605 A5 CH 634605A5
Authority
CH
Switzerland
Prior art keywords
metal
metal layers
substrate
crystalline
preparation
Prior art date
Application number
CH449578A
Other languages
German (de)
English (en)
Inventor
Guenter Menzel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH634605A5 publication Critical patent/CH634605A5/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
CH449578A 1977-06-20 1978-04-26 Process for the preparation of coarsely crystalline and monocrystalline metal layers CH634605A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2727659A DE2727659B2 (de) 1977-06-20 1977-06-20 Verfahren zur Herstellung grobkristalliner oder einkristalliner Metallschichten

Publications (1)

Publication Number Publication Date
CH634605A5 true CH634605A5 (en) 1983-02-15

Family

ID=6011893

Family Applications (1)

Application Number Title Priority Date Filing Date
CH449578A CH634605A5 (en) 1977-06-20 1978-04-26 Process for the preparation of coarsely crystalline and monocrystalline metal layers

Country Status (5)

Country Link
JP (1) JPS548129A (fr)
CH (1) CH634605A5 (fr)
DE (1) DE2727659B2 (fr)
FR (1) FR2395326A1 (fr)
GB (1) GB1576707A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241155A1 (fr) * 1986-03-31 1987-10-14 Unisys Corporation Dépôt d'une base de vanadium pour films magnétiques

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2924920A1 (de) * 1979-06-20 1981-01-22 Siemens Ag Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten
DE3003136A1 (de) * 1980-01-29 1981-07-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von thermisch stabilen, metallischen schichten
DE3003285A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten
DE3390522C2 (de) * 1983-08-25 1987-10-15 Vni Skij Instr Nyj I Spanendes Werkzeug und Verfahren zu dessen Herstellung
JPS63166966A (ja) * 1986-12-27 1988-07-11 Tokuda Seisakusho Ltd スパツタリング装置
JP2000068230A (ja) 1998-08-25 2000-03-03 Mitsubishi Electric Corp 半導体装置、その製造装置、および、その製造方法
DE19851167B4 (de) * 1998-11-06 2005-10-20 Herbert Kliem Elektrischer Kondensator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1285827B (de) * 1963-03-26 1968-12-19 Ibm Verfahren zum Herstellen von duennen Schichten mit hoher Reinheit und Gleichmaessigkeit, durch Vakuumaufdampfen
FR1459038A (fr) * 1964-09-11 1966-04-29 Ibm Alliages amorphes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241155A1 (fr) * 1986-03-31 1987-10-14 Unisys Corporation Dépôt d'une base de vanadium pour films magnétiques

Also Published As

Publication number Publication date
DE2727659A1 (de) 1979-01-04
GB1576707A (en) 1980-10-15
FR2395326A1 (fr) 1979-01-19
JPS548129A (en) 1979-01-22
DE2727659B2 (de) 1980-01-10
FR2395326B1 (fr) 1984-05-25

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Legal Events

Date Code Title Description
PL Patent ceased