FR2395326A1 - Procede pour la fabrication de couches metalliques en gros cristaux ou monocristallines - Google Patents

Procede pour la fabrication de couches metalliques en gros cristaux ou monocristallines

Info

Publication number
FR2395326A1
FR2395326A1 FR7818309A FR7818309A FR2395326A1 FR 2395326 A1 FR2395326 A1 FR 2395326A1 FR 7818309 A FR7818309 A FR 7818309A FR 7818309 A FR7818309 A FR 7818309A FR 2395326 A1 FR2395326 A1 FR 2395326A1
Authority
FR
France
Prior art keywords
substrate
monocristalline
manufacture
metal layers
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7818309A
Other languages
English (en)
Other versions
FR2395326B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2395326A1 publication Critical patent/FR2395326A1/fr
Application granted granted Critical
Publication of FR2395326B1 publication Critical patent/FR2395326B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

Procédé pour la fabrication de couches métalliques à gros cristaux ou monocristallines, dans lequel, par évaporation sous vide ou pulvérisation, on dépose un métal sur un substrat. Pour réaliser les couches métalliques à gros cristaux ou monocristallines, par évaporation sous vide ou pulvérisation d'un métal sur un substrat, on dépose sur le substrat refroidi à une température inférieure à - 90 degrés C une couche amorphe 10 de Ta, W, Cu, Co, Al, un alliage de Al ou un alliage de Ti-V avec une proportion supérieure à 70 % d'atomes de V, puis on recristallise la couche amorphe en chauffant le substrat 9 avec la couche métallique déposée 10 jusqu'à une température maximale de 300 degrés C.
FR7818309A 1977-06-20 1978-06-19 Procede pour la fabrication de couches metalliques en gros cristaux ou monocristallines Granted FR2395326A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2727659A DE2727659B2 (de) 1977-06-20 1977-06-20 Verfahren zur Herstellung grobkristalliner oder einkristalliner Metallschichten

Publications (2)

Publication Number Publication Date
FR2395326A1 true FR2395326A1 (fr) 1979-01-19
FR2395326B1 FR2395326B1 (fr) 1984-05-25

Family

ID=6011893

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7818309A Granted FR2395326A1 (fr) 1977-06-20 1978-06-19 Procede pour la fabrication de couches metalliques en gros cristaux ou monocristallines

Country Status (5)

Country Link
JP (1) JPS548129A (fr)
CH (1) CH634605A5 (fr)
DE (1) DE2727659B2 (fr)
FR (1) FR2395326A1 (fr)
GB (1) GB1576707A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000999A1 (fr) * 1983-08-25 1985-03-14 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Outil de coupe et son procede de fabrication

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2924920A1 (de) * 1979-06-20 1981-01-22 Siemens Ag Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten
DE3003136A1 (de) * 1980-01-29 1981-07-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von thermisch stabilen, metallischen schichten
DE3003285A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten
DE3762052D1 (de) * 1986-03-31 1990-05-03 Unisys Corp Abscheidung einer vanadin-unterlage fuer magnetische filme.
JPS63166966A (ja) * 1986-12-27 1988-07-11 Tokuda Seisakusho Ltd スパツタリング装置
JP2000068230A (ja) 1998-08-25 2000-03-03 Mitsubishi Electric Corp 半導体装置、その製造装置、および、その製造方法
DE19851167B4 (de) * 1998-11-06 2005-10-20 Herbert Kliem Elektrischer Kondensator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1386849A (fr) * 1963-03-26 1965-01-22 Ibm Méthode de dépôt pelliculaire
FR1459038A (fr) * 1964-09-11 1966-04-29 Ibm Alliages amorphes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1386849A (fr) * 1963-03-26 1965-01-22 Ibm Méthode de dépôt pelliculaire
FR1459038A (fr) * 1964-09-11 1966-04-29 Ibm Alliages amorphes

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/59 *
EXBK/60 *
EXBK/75 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000999A1 (fr) * 1983-08-25 1985-03-14 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Outil de coupe et son procede de fabrication
GB2156387A (en) * 1983-08-25 1985-10-09 Vni Instrument Inst Cutting tool and method of manufacture thereof

Also Published As

Publication number Publication date
JPS548129A (en) 1979-01-22
FR2395326B1 (fr) 1984-05-25
GB1576707A (en) 1980-10-15
DE2727659A1 (de) 1979-01-04
DE2727659B2 (de) 1980-01-10
CH634605A5 (en) 1983-02-15

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