CH629068GA3 - - Google Patents

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Publication number
CH629068GA3
CH629068GA3 CH909578A CH909578A CH629068GA3 CH 629068G A3 CH629068G A3 CH 629068GA3 CH 909578 A CH909578 A CH 909578A CH 909578 A CH909578 A CH 909578A CH 629068G A3 CH629068G A3 CH 629068GA3
Authority
CH
Switzerland
Prior art keywords
impurity concentration
integrated circuitry
frequency
oscillating
vibrator
Prior art date
Application number
CH909578A
Other languages
French (fr)
Other versions
CH629068B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of CH629068B publication Critical patent/CH629068B/en
Application filed filed Critical
Publication of CH629068GA3 publication Critical patent/CH629068GA3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H03K3/3545—Stabilisation of output, e.g. using crystal
    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/04—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses
    • G04F5/06—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses using piezoelectric resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Amplifiers (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electric Clocks (AREA)

Abstract

A high frequency oscillating circuit comprises an integrated circuitry composed of first and second lateral type transistors and a longitudinal type junction field effect transistor formed in a semiconductor layer of low impurity concentration epitaxially grown on a semiconductor substrate of high impurity concentration. An AT cut quartz crystal vibrator operable at a high oscillating frequency of more than several MHz is connected to the integrated circuitry, and a pair of capacitors are provided to adjust the vibrator oscillating frequency.
CH909578A 1977-08-29 1978-08-29 SELF-POLARIZATION AMPLIFIER CIRCUIT. CH629068B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10339477A JPS5437481A (en) 1977-08-29 1977-08-29 Amplifier circuit

Publications (2)

Publication Number Publication Date
CH629068B CH629068B (en)
CH629068GA3 true CH629068GA3 (en) 1982-04-15

Family

ID=14352838

Family Applications (1)

Application Number Title Priority Date Filing Date
CH909578A CH629068B (en) 1977-08-29 1978-08-29 SELF-POLARIZATION AMPLIFIER CIRCUIT.

Country Status (5)

Country Link
US (1) US4215322A (en)
JP (1) JPS5437481A (en)
CH (1) CH629068B (en)
DE (1) DE2833784A1 (en)
GB (1) GB2004714B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203203A (en) * 1981-06-09 1982-12-13 Kazumi Hamabe Method and apparatus for prevention of record disc noise
GB2154819B (en) * 1984-02-21 1987-09-30 Ferranti Plc Amplifier circuits
US4786961A (en) * 1986-02-28 1988-11-22 General Electric Company Bipolar transistor with transient suppressor
US5483191A (en) * 1994-09-23 1996-01-09 At&T Corp. Apparatus for biasing a FET with a single voltage supply
KR100255134B1 (en) * 1997-12-31 2000-05-01 윤종용 Semiconductor device and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346637B2 (en) * 1974-08-27 1978-12-15
JPS5341078B2 (en) * 1974-09-20 1978-10-31
JPS5216956A (en) * 1975-07-30 1977-02-08 Hitachi Ltd Self-bias type amplifier

Also Published As

Publication number Publication date
CH629068B (en)
DE2833784A1 (en) 1979-03-15
GB2004714B (en) 1982-02-10
US4215322A (en) 1980-07-29
JPS5437481A (en) 1979-03-19
GB2004714A (en) 1979-04-04

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