CH617725A5 - Device for continuous manufacture of preformed single crystals in the form of plates - Google Patents
Device for continuous manufacture of preformed single crystals in the form of plates Download PDFInfo
- Publication number
- CH617725A5 CH617725A5 CH127877A CH127877A CH617725A5 CH 617725 A5 CH617725 A5 CH 617725A5 CH 127877 A CH127877 A CH 127877A CH 127877 A CH127877 A CH 127877A CH 617725 A5 CH617725 A5 CH 617725A5
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- single crystal
- manufacture
- allowing
- capillary
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/951,241 US4181161A (en) | 1977-02-02 | 1978-10-13 | Method of producing a high vacuum in a container |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7700572A FR2376697A2 (fr) | 1977-01-11 | 1977-01-11 | Dispositif de fabrication en continu de monocristaux preformes en forme de plaques |
Publications (1)
Publication Number | Publication Date |
---|---|
CH617725A5 true CH617725A5 (en) | 1980-06-13 |
Family
ID=9185325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH127877A CH617725A5 (en) | 1977-01-11 | 1977-02-02 | Device for continuous manufacture of preformed single crystals in the form of plates |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5919914B2 (da) |
CH (1) | CH617725A5 (da) |
DE (1) | DE2704913C2 (da) |
FR (1) | FR2376697A2 (da) |
GB (1) | GB1572915A (da) |
IT (1) | IT1117104B (da) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4430305A (en) * | 1979-02-12 | 1984-02-07 | Mobil Solar Energy Corporation | Displaced capillary dies |
FR2528454A1 (fr) * | 1982-06-11 | 1983-12-16 | Criceram | Creuset modifie pour la methode de cristallisation par goutte pendante |
DE3231267A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
DE3240245A1 (de) * | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen |
US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
KR101716322B1 (ko) * | 2016-04-11 | 2017-03-27 | 주식회사 디에프아이 | 호모시스테인 측정수단 및 그 제조방법 |
-
1977
- 1977-01-11 FR FR7700572A patent/FR2376697A2/fr active Granted
- 1977-02-02 GB GB424377A patent/GB1572915A/en not_active Expired
- 1977-02-02 CH CH127877A patent/CH617725A5/fr not_active IP Right Cessation
- 1977-02-05 DE DE19772704913 patent/DE2704913C2/de not_active Expired
- 1977-02-07 JP JP1170777A patent/JPS5919914B2/ja not_active Expired
- 1977-02-07 IT IT6727077A patent/IT1117104B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2376697A2 (fr) | 1978-08-04 |
DE2704913C2 (de) | 1983-09-15 |
JPS5387984A (en) | 1978-08-02 |
IT1117104B (it) | 1986-02-10 |
FR2376697B2 (da) | 1981-04-30 |
JPS5919914B2 (ja) | 1984-05-09 |
DE2704913A1 (de) | 1978-07-13 |
GB1572915A (en) | 1980-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |