CH550458A - Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher. - Google Patents

Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher.

Info

Publication number
CH550458A
CH550458A CH971272A CH971272A CH550458A CH 550458 A CH550458 A CH 550458A CH 971272 A CH971272 A CH 971272A CH 971272 A CH971272 A CH 971272A CH 550458 A CH550458 A CH 550458A
Authority
CH
Switzerland
Prior art keywords
memory
bit
storing
data
cells
Prior art date
Application number
CH971272A
Other languages
German (de)
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH550458A publication Critical patent/CH550458A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
CH971272A 1971-07-06 1972-06-28 Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher. CH550458A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
CH550458A true CH550458A (de) 1974-06-14

Family

ID=22574399

Family Applications (1)

Application Number Title Priority Date Filing Date
CH971272A CH550458A (de) 1971-07-06 1972-06-28 Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher.

Country Status (7)

Country Link
JP (1) JPS5145945B1 (enrdf_load_stackoverflow)
CA (1) CA961170A (enrdf_load_stackoverflow)
CH (1) CH550458A (enrdf_load_stackoverflow)
DE (1) DE2232765C3 (enrdf_load_stackoverflow)
ES (1) ES404184A1 (enrdf_load_stackoverflow)
FR (1) FR2144903B1 (enrdf_load_stackoverflow)
IT (1) IT956843B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
DE2543628C2 (de) * 1975-09-30 1987-05-07 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen
DE2708101A1 (de) * 1977-02-25 1978-08-31 Itt Ind Gmbh Deutsche Verfahren zum schreiben eines speichertransistors mit gate-isolierdoppelschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137069B1 (enrdf_load_stackoverflow) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
GB1374009A (en) * 1971-08-09 1974-11-13 Ibm Information storage

Also Published As

Publication number Publication date
IT956843B (it) 1973-10-10
DE2232765B2 (de) 1981-10-15
FR2144903A1 (enrdf_load_stackoverflow) 1973-02-16
CA961170A (en) 1975-01-14
JPS5145945B1 (enrdf_load_stackoverflow) 1976-12-06
DE2232765A1 (de) 1973-01-18
FR2144903B1 (enrdf_load_stackoverflow) 1977-01-14
DE2232765C3 (de) 1982-05-27
ES404184A1 (es) 1975-06-01

Similar Documents

Publication Publication Date Title
CA946511A (en) Nonvolatile flip-flop memory cells
CH538736A (de) Hierarchische Datenspeichereinrichtung
CA941965A (en) Integrated circuit read only memory bit organized in coincident select structure
CH554052A (de) Integrierter halbleiterdatenspeicher, der einzelne defekte speicherzellen enthalten kann.
NL178825C (nl) Datageheugen, voorzien van een aantal mos-geheugencellen en regeneratiemiddelen voor het verversen van de inhoud van de geheugencellen.
IT1115357B (it) Matrice di memorizzazione con bit speciali di indirizzamento
GB1118010A (en) Improvements in information storage media used in photoplastic recording
CA981365A (en) Latch type regenerative circuit for reading a dynamic memory cell
CH550458A (de) Speicherzelle zur speicherung eines bits und verwendung solcher speicherzellen in einem datenspeicher.
IT1042254B (it) Dispositivo per iscrivere segnali binari in elementi memorizzatori scelti in una memoria mos
SE427395B (sv) Databerare for lagring av data i form av binera talverden i rad- och kolumnvis anordnade lagringselement
CH534939A (de) In eine binäre Speichermatrix integrierbare Speicherzelle
JPS5651093A (en) Semiconductor storage device
AT377107B (de) Anordnung zur steuerung der zwischenspeicherung von zwischen zwei funktionseinheiten zu uebertragenden informationen in einem pufferspeicher
SE383056B (sv) Elektronisk minneslagringscell med tre klemmor
JPS52102013A (en) Memory unit
CH552920A (de) Vorrichtung zum ablesen von in einem aufzeichnungstraeger gespeicherten informationen.
JPS53123685A (en) Binary memory device
IT8025923A0 (it) Complesso di celle di memorizzazione per una memoria statica.
JPS6482392A (en) Semiconductor memory device
JPS57127981A (en) Digital signal storage device
JPS578980A (en) Memory device
EP0176714A3 (en) Memory cell storing logic data in volatile and non-volatile forms
AT350305B (de) Speicheranordnung zur speicherung von speicherworten in einem assoziativspeicher
JPS57127992A (en) Test method for memory

Legal Events

Date Code Title Description
PL Patent ceased