CA961170A - Single-electrode charge-coupled random access memory cell - Google Patents

Single-electrode charge-coupled random access memory cell

Info

Publication number
CA961170A
CA961170A CA145,629A CA145629A CA961170A CA 961170 A CA961170 A CA 961170A CA 145629 A CA145629 A CA 145629A CA 961170 A CA961170 A CA 961170A
Authority
CA
Canada
Prior art keywords
memory cell
random access
access memory
electrode charge
coupled random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA145,629A
Other languages
English (en)
Other versions
CA145629S (en
Inventor
Irving T. Ho
Hwa N. Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA961170A publication Critical patent/CA961170A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
CA145,629A 1971-07-06 1972-06-26 Single-electrode charge-coupled random access memory cell Expired CA961170A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
CA961170A true CA961170A (en) 1975-01-14

Family

ID=22574399

Family Applications (1)

Application Number Title Priority Date Filing Date
CA145,629A Expired CA961170A (en) 1971-07-06 1972-06-26 Single-electrode charge-coupled random access memory cell

Country Status (7)

Country Link
JP (1) JPS5145945B1 (enrdf_load_stackoverflow)
CA (1) CA961170A (enrdf_load_stackoverflow)
CH (1) CH550458A (enrdf_load_stackoverflow)
DE (1) DE2232765C3 (enrdf_load_stackoverflow)
ES (1) ES404184A1 (enrdf_load_stackoverflow)
FR (1) FR2144903B1 (enrdf_load_stackoverflow)
IT (1) IT956843B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
DE2543628C2 (de) * 1975-09-30 1987-05-07 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen
DE2708101A1 (de) * 1977-02-25 1978-08-31 Itt Ind Gmbh Deutsche Verfahren zum schreiben eines speichertransistors mit gate-isolierdoppelschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137069B1 (enrdf_load_stackoverflow) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
GB1374009A (en) * 1971-08-09 1974-11-13 Ibm Information storage

Also Published As

Publication number Publication date
IT956843B (it) 1973-10-10
DE2232765B2 (de) 1981-10-15
FR2144903A1 (enrdf_load_stackoverflow) 1973-02-16
JPS5145945B1 (enrdf_load_stackoverflow) 1976-12-06
DE2232765A1 (de) 1973-01-18
CH550458A (de) 1974-06-14
FR2144903B1 (enrdf_load_stackoverflow) 1977-01-14
DE2232765C3 (de) 1982-05-27
ES404184A1 (es) 1975-06-01

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