CH534431A - Halbleiteranordnung mit integrierten Isolierschicht-Feldeffekttransistoren - Google Patents
Halbleiteranordnung mit integrierten Isolierschicht-FeldeffekttransistorenInfo
- Publication number
- CH534431A CH534431A CH1286271A CH1286271A CH534431A CH 534431 A CH534431 A CH 534431A CH 1286271 A CH1286271 A CH 1286271A CH 1286271 A CH1286271 A CH 1286271A CH 534431 A CH534431 A CH 534431A
- Authority
- CH
- Switzerland
- Prior art keywords
- field effect
- effect transistors
- semiconductor arrangement
- film field
- integrated insulated
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702043405 DE2043405A1 (de) | 1970-09-02 | 1970-09-02 | Halbleiteranordnung mit monolithisch integrierten Isolierschicht-Feldeffekttransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
CH534431A true CH534431A (de) | 1973-02-28 |
Family
ID=5781308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1286271A CH534431A (de) | 1970-09-02 | 1971-09-01 | Halbleiteranordnung mit integrierten Isolierschicht-Feldeffekttransistoren |
Country Status (8)
Country | Link |
---|---|
AU (1) | AU3180371A (de) |
BE (1) | BE770898A (de) |
CH (1) | CH534431A (de) |
DE (1) | DE2043405A1 (de) |
ES (1) | ES394706A1 (de) |
FR (1) | FR2105176B1 (de) |
GB (1) | GB1353366A (de) |
NL (1) | NL7112058A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572851B1 (fr) * | 1984-11-08 | 1987-07-31 | Matra Harris Semiconducteurs | Reseau prediffuse a cellules de base interconnectables |
-
1970
- 1970-09-02 DE DE19702043405 patent/DE2043405A1/de active Pending
-
1971
- 1971-07-20 FR FR7127187A patent/FR2105176B1/fr not_active Expired
- 1971-07-29 AU AU31803/71A patent/AU3180371A/en not_active Expired
- 1971-08-03 BE BE770898A patent/BE770898A/xx unknown
- 1971-08-31 GB GB4055471A patent/GB1353366A/en not_active Expired
- 1971-09-01 CH CH1286271A patent/CH534431A/de not_active IP Right Cessation
- 1971-09-01 NL NL7112058A patent/NL7112058A/xx unknown
- 1971-09-01 ES ES394706A patent/ES394706A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2043405A1 (de) | 1972-03-16 |
FR2105176A1 (de) | 1972-04-28 |
BE770898A (fr) | 1971-12-16 |
AU3180371A (en) | 1973-02-01 |
NL7112058A (de) | 1972-03-06 |
ES394706A1 (es) | 1975-11-01 |
FR2105176B1 (de) | 1974-10-31 |
GB1353366A (en) | 1974-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |