CH516004A - Verfahren zur Zufuhr von Teilchenmaterial in einen sich um eine etwa horizontale Achse drehenden zylindrischen Verdampfungstiegel einer Vakuum-Bedampfungsanlage - Google Patents
Verfahren zur Zufuhr von Teilchenmaterial in einen sich um eine etwa horizontale Achse drehenden zylindrischen Verdampfungstiegel einer Vakuum-BedampfungsanlageInfo
- Publication number
- CH516004A CH516004A CH1522667A CH1522667A CH516004A CH 516004 A CH516004 A CH 516004A CH 1522667 A CH1522667 A CH 1522667A CH 1522667 A CH1522667 A CH 1522667A CH 516004 A CH516004 A CH 516004A
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- particulate material
- line
- opening
- shield
- Prior art date
Links
- 239000011236 particulate material Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 28
- 238000001704 evaporation Methods 0.000 title claims description 17
- 230000008020 evaporation Effects 0.000 title claims description 16
- 238000007738 vacuum evaporation Methods 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 62
- 238000010894 electron beam technology Methods 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000009825 accumulation Methods 0.000 claims description 8
- 230000001419 dependent effect Effects 0.000 claims description 8
- 239000013618 particulate matter Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000006872 improvement Effects 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000004576 sand Substances 0.000 description 51
- 239000002826 coolant Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241000239290 Araneae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59065666A | 1966-10-31 | 1966-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH516004A true CH516004A (de) | 1971-11-30 |
Family
ID=24363121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1522667A CH516004A (de) | 1966-10-31 | 1967-10-31 | Verfahren zur Zufuhr von Teilchenmaterial in einen sich um eine etwa horizontale Achse drehenden zylindrischen Verdampfungstiegel einer Vakuum-Bedampfungsanlage |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3504094A (https=) |
| AT (1) | AT280727B (https=) |
| BE (1) | BE705665A (https=) |
| CH (1) | CH516004A (https=) |
| DE (1) | DE1621205A1 (https=) |
| ES (1) | ES346591A1 (https=) |
| FR (1) | FR1541498A (https=) |
| GB (1) | GB1181698A (https=) |
| LU (1) | LU54738A1 (https=) |
| NL (1) | NL6714814A (https=) |
| NO (1) | NO119340B (https=) |
| SE (1) | SE334519B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722696B2 (ja) * | 1989-07-29 | 1995-03-15 | 新日本製鐵株式會社 | 微粉末の製造方法と装置ならびにその利用方法 |
| CN109594046B (zh) * | 2019-01-23 | 2023-07-07 | 湖南宇晶机器股份有限公司 | 一种镀膜用蒸发装置 |
| CN117885181B (zh) * | 2024-03-14 | 2024-05-31 | 施密特钢轨技术(昆山)有限公司 | 一种坩埚射砂导流组件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1193783A (en) * | 1916-08-08 | Iiousk | ||
| DE1175224B (de) * | 1959-04-17 | 1964-08-06 | Knapsack Ag | Vorrichtung zur Erzeugung von Acetylen und AEthylen durch thermische Spaltung von Kohlen-wasserstoffen mittels eines im elektrischen Licht-bogen erhitzten gasfoermigen Waermetraegers |
-
1966
- 1966-10-31 US US590656A patent/US3504094A/en not_active Expired - Lifetime
-
1967
- 1967-10-17 DE DE19671621205 patent/DE1621205A1/de active Pending
- 1967-10-17 GB GB47166/67A patent/GB1181698A/en not_active Expired
- 1967-10-20 FR FR125206A patent/FR1541498A/fr not_active Expired
- 1967-10-25 LU LU54738D patent/LU54738A1/xx unknown
- 1967-10-26 BE BE705665D patent/BE705665A/xx unknown
- 1967-10-30 ES ES346591A patent/ES346591A1/es not_active Expired
- 1967-10-30 NO NO170317A patent/NO119340B/no unknown
- 1967-10-30 SE SE14822/67A patent/SE334519B/xx unknown
- 1967-10-31 NL NL6714814A patent/NL6714814A/xx unknown
- 1967-10-31 CH CH1522667A patent/CH516004A/de not_active IP Right Cessation
- 1967-10-31 AT AT985767A patent/AT280727B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR1541498A (fr) | 1968-10-04 |
| NL6714814A (https=) | 1968-05-01 |
| GB1181698A (en) | 1970-02-18 |
| NO119340B (https=) | 1970-05-04 |
| BE705665A (https=) | 1968-03-01 |
| LU54738A1 (https=) | 1968-01-26 |
| ES346591A1 (es) | 1969-01-01 |
| US3504094A (en) | 1970-03-31 |
| DE1621205A1 (de) | 1971-06-03 |
| AT280727B (de) | 1970-04-27 |
| SE334519B (https=) | 1971-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2821481C2 (de) | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze | |
| EP0451552B1 (de) | Verfahren und Vorrichtung zur Formung eines Giesstrahls | |
| DE69103245T2 (de) | Düse für Oberflächenbehandlung durch einen Laser mit Pulverzufuhr. | |
| DE60128488T2 (de) | Ofen und verfarhen zum schmelzen und formen von gegenständen aus quarzglas | |
| DE2725885C2 (https=) | ||
| EP0124938B1 (de) | Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen | |
| DE69201292T2 (de) | Vorrichtung zur Einkristallziehung. | |
| DE2752308A1 (de) | Vorrichtung zum zuechten von einkristallen aus einer schmelze bei zufuehrung von zerkleinertem chargenmaterial | |
| DE3036177A1 (de) | Vorrichtung zum herstellen von festen kristallen aus geschmolzenem material | |
| DE3005492A1 (de) | Verfahren zur herstellung reinster einkristalle durch tiegelziehen nach czochralski | |
| DE2940933A1 (de) | Loeschring- und tauchrohrbaugruppe fuer einen reaktionsbehaelter | |
| EP0819783B1 (de) | Verfahren und Vorrichtung zur Herstellung eines Einkristalls | |
| EP0217158A2 (de) | Verfahren und Vorrichtung zur Herstellung von Siliciumstäben | |
| CH516004A (de) | Verfahren zur Zufuhr von Teilchenmaterial in einen sich um eine etwa horizontale Achse drehenden zylindrischen Verdampfungstiegel einer Vakuum-Bedampfungsanlage | |
| DE2016101C3 (de) | Verfahren zum Ziehen eines Halbleiterstabes | |
| DE2012077A1 (de) | Apparat zum Auftragen eines metallenen Überzuges auf ein Substrat | |
| DE2441835A1 (de) | Kristallzuechtungsofen | |
| CH667107A5 (de) | Verfahren und vorrichtung zur materialverdampfung. | |
| DE4342574C1 (de) | Bandbedampfungsanlage | |
| DE1444530A1 (de) | Verfahren zum Herstellen von einkristallinen Halbleiterstaeben | |
| WO2021115904A1 (de) | Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist | |
| DE3211861A1 (de) | Verfahren und vorrichtung zur herstellung von hochreinen keramikfreien metallpulvern | |
| DE2335301C2 (de) | Verfahren und Vorrichtung zur Herstellung von Metallegierungen durch Vakuumaufdampfen | |
| DE3736339A1 (de) | Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren | |
| DE1621295C3 (de) | Verfahren und Vorrichtung zum Bedecken von Substraten durch Bedampfen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |