CH505474A - Integrierte Schaltung und Verfahren zur Herstellung dieser Schaltung - Google Patents

Integrierte Schaltung und Verfahren zur Herstellung dieser Schaltung

Info

Publication number
CH505474A
CH505474A CH1778569A CH1778569A CH505474A CH 505474 A CH505474 A CH 505474A CH 1778569 A CH1778569 A CH 1778569A CH 1778569 A CH1778569 A CH 1778569A CH 505474 A CH505474 A CH 505474A
Authority
CH
Switzerland
Prior art keywords
circuit
making
integrated circuit
integrated
Prior art date
Application number
CH1778569A
Other languages
English (en)
Inventor
George Neale Ronald
Robert Ovshinsky Stanford
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of CH505474A publication Critical patent/CH505474A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Memories (AREA)
CH1778569A 1968-11-29 1969-11-28 Integrierte Schaltung und Verfahren zur Herstellung dieser Schaltung CH505474A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77967468A 1968-11-29 1968-11-29

Publications (1)

Publication Number Publication Date
CH505474A true CH505474A (de) 1971-03-31

Family

ID=25117159

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1778569A CH505474A (de) 1968-11-29 1969-11-28 Integrierte Schaltung und Verfahren zur Herstellung dieser Schaltung

Country Status (8)

Country Link
US (1) US3634927A (de)
BE (1) BE742303A (de)
CH (1) CH505474A (de)
DE (1) DE1959438C3 (de)
FR (1) FR2024592A1 (de)
GB (1) GB1297924A (de)
NL (1) NL6917915A (de)
SE (1) SE365095B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827073A (en) * 1969-05-01 1974-07-30 Texas Instruments Inc Gated bilateral switching semiconductor device
JPS5130437B1 (de) * 1970-03-25 1976-09-01
US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
FR2137184B1 (de) * 1971-05-14 1976-03-19 Commissariat Energie Atomique
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US3818252A (en) * 1971-12-20 1974-06-18 Hitachi Ltd Universal logical integrated circuit
US3795977A (en) * 1971-12-30 1974-03-12 Ibm Methods for fabricating bistable resistors
US3801910A (en) * 1972-07-03 1974-04-02 Ibm Externally accessing mechanical difficult to access circuit nodes using photo-responsive conductors in integrated circuits
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3913216A (en) * 1973-06-20 1975-10-21 Signetics Corp Method for fabricating a precision aligned semiconductor array
US4159461A (en) * 1977-11-22 1979-06-26 Stackpole Components Co. Resistor network having horizontal geometry
US4240094A (en) * 1978-03-20 1980-12-16 Harris Corporation Laser-configured logic array
US4296424A (en) * 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
DE2824308A1 (de) * 1978-06-02 1979-12-13 Siemens Ag Verfahren zum einpraegen einer spannung mit einem elektronenstrahl
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
DE3032306A1 (de) * 1980-08-27 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung mit zu- und/oder abschaltbaren schaltungsteilen
US4479088A (en) * 1981-01-16 1984-10-23 Burroughs Corporation Wafer including test lead connected to ground for testing networks thereon
DE3277759D1 (en) * 1981-09-18 1988-01-07 Fujitsu Ltd Semiconductor device having new conductive interconnection structure and method for manufacturing the same
FR2522200A1 (fr) * 1982-02-23 1983-08-26 Centre Nat Rech Scient Microcircuits et procede de fabrication, notamment pour technologie a effet josephson
FR2535887A1 (fr) * 1982-11-04 1984-05-11 Thomson Csf Procede de fabrication d'une structure logique integree programmee selon une configuration preetablie fixe
GB8512532D0 (en) * 1985-05-17 1985-06-19 Pa Consulting Services Electrical circuit interconnection
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
GB2212978A (en) * 1987-11-30 1989-08-02 Plessey Co Plc An integrated circuit having a patch array
JPH01184942A (ja) * 1988-01-20 1989-07-24 Toshiba Corp トリミング素子とその電気短絡方法
US4916514A (en) * 1988-05-31 1990-04-10 Unisys Corporation Integrated circuit employing dummy conductors for planarity
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
JPH1154301A (ja) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd チップ型サーミスタ
TW492103B (en) * 2000-06-02 2002-06-21 Koninkl Philips Electronics Nv Electronic device, and method of patterning a first layer
US8049299B2 (en) * 2009-02-25 2011-11-01 Freescale Semiconductor, Inc. Antifuses with curved breakdown regions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3077578A (en) * 1958-06-27 1963-02-12 Massachusetts Inst Technology Semiconductor switching matrix
DE1215754B (de) * 1964-02-24 1966-05-05 Danfoss As Elektronischer Schalter
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3423646A (en) * 1965-02-01 1969-01-21 Sperry Rand Corp Computer logic device consisting of an array of tunneling diodes,isolators and short circuits
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques

Also Published As

Publication number Publication date
DE1959438B2 (de) 1975-03-06
NL6917915A (de) 1970-06-02
FR2024592A1 (de) 1970-08-28
GB1297924A (de) 1972-11-29
US3634927A (en) 1972-01-18
DE1959438A1 (de) 1970-06-18
BE742303A (de) 1970-05-04
DE1959438C3 (de) 1975-10-23
SE365095B (de) 1974-03-11

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Legal Events

Date Code Title Description
PL Patent ceased