FR2024592A1 - - Google Patents

Info

Publication number
FR2024592A1
FR2024592A1 FR6941276A FR6941276A FR2024592A1 FR 2024592 A1 FR2024592 A1 FR 2024592A1 FR 6941276 A FR6941276 A FR 6941276A FR 6941276 A FR6941276 A FR 6941276A FR 2024592 A1 FR2024592 A1 FR 2024592A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6941276A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2024592A1 publication Critical patent/FR2024592A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
FR6941276A 1968-11-29 1969-11-28 Withdrawn FR2024592A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77967468A 1968-11-29 1968-11-29

Publications (1)

Publication Number Publication Date
FR2024592A1 true FR2024592A1 (fr) 1970-08-28

Family

ID=25117159

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6941276A Withdrawn FR2024592A1 (fr) 1968-11-29 1969-11-28

Country Status (8)

Country Link
US (1) US3634927A (fr)
BE (1) BE742303A (fr)
CH (1) CH505474A (fr)
DE (1) DE1959438C3 (fr)
FR (1) FR2024592A1 (fr)
GB (1) GB1297924A (fr)
NL (1) NL6917915A (fr)
SE (1) SE365095B (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191266A1 (fr) * 1972-07-03 1974-02-01 Ibm
EP0005762A1 (fr) * 1978-06-02 1979-12-12 Siemens Aktiengesellschaft Procédé pour appliquer une tension au moyen d'un faisceau d'électrons
FR2522200A1 (fr) * 1982-02-23 1983-08-26 Centre Nat Rech Scient Microcircuits et procede de fabrication, notamment pour technologie a effet josephson
FR2535887A1 (fr) * 1982-11-04 1984-05-11 Thomson Csf Procede de fabrication d'une structure logique integree programmee selon une configuration preetablie fixe
WO1986006876A1 (fr) * 1985-05-17 1986-11-20 Pa Consulting Services Limited Etablissement optique de connexions dans des dispositifs integres
EP0325234A2 (fr) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Elément d'ajustage pour circuit microélectronique

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827073A (en) * 1969-05-01 1974-07-30 Texas Instruments Inc Gated bilateral switching semiconductor device
JPS5130437B1 (fr) * 1970-03-25 1976-09-01
US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
FR2137184B1 (fr) * 1971-05-14 1976-03-19 Commissariat Energie Atomique
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US3818252A (en) * 1971-12-20 1974-06-18 Hitachi Ltd Universal logical integrated circuit
US3795977A (en) * 1971-12-30 1974-03-12 Ibm Methods for fabricating bistable resistors
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3913216A (en) * 1973-06-20 1975-10-21 Signetics Corp Method for fabricating a precision aligned semiconductor array
US4159461A (en) * 1977-11-22 1979-06-26 Stackpole Components Co. Resistor network having horizontal geometry
US4240094A (en) * 1978-03-20 1980-12-16 Harris Corporation Laser-configured logic array
US4296424A (en) * 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
DE3032306A1 (de) * 1980-08-27 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung mit zu- und/oder abschaltbaren schaltungsteilen
US4479088A (en) * 1981-01-16 1984-10-23 Burroughs Corporation Wafer including test lead connected to ground for testing networks thereon
EP0075454B1 (fr) * 1981-09-18 1987-11-25 Fujitsu Limited Dispositif semi-conducteur comprenant une structure d'interconnexion conductrice et procédé pour le fabriquer
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
GB2212978A (en) * 1987-11-30 1989-08-02 Plessey Co Plc An integrated circuit having a patch array
US4916514A (en) * 1988-05-31 1990-04-10 Unisys Corporation Integrated circuit employing dummy conductors for planarity
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
JPH1154301A (ja) * 1997-08-07 1999-02-26 Murata Mfg Co Ltd チップ型サーミスタ
TW492103B (en) * 2000-06-02 2002-06-21 Koninkl Philips Electronics Nv Electronic device, and method of patterning a first layer
US8049299B2 (en) * 2009-02-25 2011-11-01 Freescale Semiconductor, Inc. Antifuses with curved breakdown regions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3077578A (en) * 1958-06-27 1963-02-12 Massachusetts Inst Technology Semiconductor switching matrix
DE1215754B (de) * 1964-02-24 1966-05-05 Danfoss As Elektronischer Schalter
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3423646A (en) * 1965-02-01 1969-01-21 Sperry Rand Corp Computer logic device consisting of an array of tunneling diodes,isolators and short circuits
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191266A1 (fr) * 1972-07-03 1974-02-01 Ibm
EP0005762A1 (fr) * 1978-06-02 1979-12-12 Siemens Aktiengesellschaft Procédé pour appliquer une tension au moyen d'un faisceau d'électrons
FR2522200A1 (fr) * 1982-02-23 1983-08-26 Centre Nat Rech Scient Microcircuits et procede de fabrication, notamment pour technologie a effet josephson
EP0088666A1 (fr) * 1982-02-23 1983-09-14 Centre National De La Recherche Scientifique (Cnrs) Microcircuits et procédé de fabrication, notamment pour technologie à effet Josephson
US4586062A (en) * 1982-02-23 1986-04-29 Centre National De La Recherche Scientifique Microcircuits formed from substrates of organic quasiunidimensional conductors
FR2535887A1 (fr) * 1982-11-04 1984-05-11 Thomson Csf Procede de fabrication d'une structure logique integree programmee selon une configuration preetablie fixe
WO1986006876A1 (fr) * 1985-05-17 1986-11-20 Pa Consulting Services Limited Etablissement optique de connexions dans des dispositifs integres
EP0325234A2 (fr) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Elément d'ajustage pour circuit microélectronique
EP0325234A3 (fr) * 1988-01-20 1990-11-28 Kabushiki Kaisha Toshiba Elément d'ajustage pour circuit microélectronique

Also Published As

Publication number Publication date
DE1959438A1 (de) 1970-06-18
US3634927A (en) 1972-01-18
SE365095B (fr) 1974-03-11
NL6917915A (fr) 1970-06-02
BE742303A (fr) 1970-05-04
DE1959438C3 (de) 1975-10-23
DE1959438B2 (de) 1975-03-06
GB1297924A (fr) 1972-11-29
CH505474A (de) 1971-03-31

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Legal Events

Date Code Title Description
ST Notification of lapse