CH468718A - Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu deren Herstellung

Info

Publication number
CH468718A
CH468718A CH1637864A CH1637864A CH468718A CH 468718 A CH468718 A CH 468718A CH 1637864 A CH1637864 A CH 1637864A CH 1637864 A CH1637864 A CH 1637864A CH 468718 A CH468718 A CH 468718A
Authority
CH
Switzerland
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
CH1637864A
Other languages
German (de)
English (en)
Inventor
Robert Dale John
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH468718A publication Critical patent/CH468718A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1637864A 1963-12-23 1964-12-18 Halbleitervorrichtung und Verfahren zu deren Herstellung CH468718A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH468718A true CH468718A (de) 1969-02-15

Family

ID=10456884

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1637864A CH468718A (de) 1963-12-23 1964-12-18 Halbleitervorrichtung und Verfahren zu deren Herstellung

Country Status (7)

Country Link
US (1) US3357870A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) AT258370B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE657564A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH468718A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1489194C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1105314A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6414781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL245567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1958-11-20

Also Published As

Publication number Publication date
US3357870A (en) 1967-12-12
NL6414781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-06-24
GB1105314A (en) 1968-03-06
DE1489194C3 (de) 1973-11-29
BE657564A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-06-23
DE1489194A1 (de) 1969-05-08
AT258370B (de) 1967-11-27
DE1489194B2 (de) 1973-04-26

Similar Documents

Publication Publication Date Title
AT259014B (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
CH395348A (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH442535A (de) Monolithische Halbleitervorrichtung und Verfahren zu deren Herstellung
CH442453A (de) Thermoelektrische Einrichtung und Verfahren zu ihrer Herstellung
AT315916B (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
CH535493A (de) Scheibenförmiges Halbleiterbauelement und Verfahren zu seiner Herstellung
CH517359A (de) Halbleiterelement und Verfahren zu dessen Herstellung
CH398219A (de) Dichtungsvorrichtung und Verfahren zu deren Herstellung
AT251650B (de) Zusammengesetzte Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH510330A (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH517376A (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
AT281122B (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
CH446534A (de) Halbleiteranordnung und Verfahren zum Herstellen derselben
CH474156A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH402189A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH363416A (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
AT316894B (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
CH474157A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CH449782A (de) Halbleiterbauelement hoher Schaltgeschwindigkeit und Verfahren zu dessen Herstellung
CH414018A (de) Steuerbare Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH434486A (de) Halbleiterschaltung und Verfahren zu deren Herstellung
CH510331A (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
CH426963A (de) Thermoelektrische Halbleiteranordnung und Verfahren zu ihrer Herstellung
CH495629A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
AT270765B (de) Elektrolumineszente Halbleiterdiode und Verfahren zu deren Herstellung