AT258370B - Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor - Google Patents

Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor

Info

Publication number
AT258370B
AT258370B AT1078564A AT1078564A AT258370B AT 258370 B AT258370 B AT 258370B AT 1078564 A AT1078564 A AT 1078564A AT 1078564 A AT1078564 A AT 1078564A AT 258370 B AT258370 B AT 258370B
Authority
AT
Austria
Prior art keywords
opto
semiconductor device
electronic transistor
photodiode
especially photodiode
Prior art date
Application number
AT1078564A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT258370B publication Critical patent/AT258370B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
AT1078564A 1963-12-23 1964-12-21 Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor AT258370B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50672/63A GB1105314A (en) 1963-12-23 1963-12-23 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
AT258370B true AT258370B (de) 1967-11-27

Family

ID=10456884

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1078564A AT258370B (de) 1963-12-23 1964-12-21 Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor

Country Status (7)

Country Link
US (1) US3357870A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) AT258370B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE657564A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH468718A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1489194C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1105314A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6414781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL245567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1958-11-20

Also Published As

Publication number Publication date
US3357870A (en) 1967-12-12
NL6414781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-06-24
GB1105314A (en) 1968-03-06
DE1489194C3 (de) 1973-11-29
CH468718A (de) 1969-02-15
BE657564A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-06-23
DE1489194A1 (de) 1969-05-08
DE1489194B2 (de) 1973-04-26

Similar Documents

Publication Publication Date Title
NL139425B (nl) Halfgeleiderdiode.
DK128388B (da) Halvlederkomponent.
FR1398424A (fr) Dispositif semi-conducteur
CH468719A (de) Halbleitervorrichtung
FR1386650A (fr) Dispositif semiconducteur
CH429953A (fr) Dispositif semiconducteur
CH406446A (de) Halbleiterbauelement
CH396220A (de) Halbleiteranordnung
AT264623B (de) Thermoelektrische Halbleitereinrichtung
FR1400150A (fr) Dispositifs semi-conducteurs perfectionnés
CH427043A (de) Halbleitervorrichtung
FR1389820A (fr) Dispositif semi-conducteur
AT258370B (de) Halbleitervorrichtung, besonders Photodiode oder opto-elektronischer Transistor
CH399601A (de) Halbleiteranordnung
NL142284B (nl) Halfgeleiderschakelinrichting.
NL142823B (nl) Halfgeleiderelement.
CH396221A (de) Halbleiteranordnung
CH416840A (de) Halbleiteranordnung
FR1396723A (fr) Diode semi-conductrice
FR1388169A (fr) Dispositifs semiconducteurs
DK118904B (da) Optoelektronisk halvlederørgan.
AT243859B (de) Halbleiteranordnung
BR6460534D0 (pt) Dispositivos semicondutores
CH440479A (de) Halbleitervorrichtung
FR1380350A (fr) Dispositif semiconducteur épitaxial